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Publication List - Toru Kanazawa 2009 (10 / 154 entries)
International Conference (Reviewed)
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Toru Kanazawa,
Hisashi Saito,
Kazuya Wakabayashi,
Ryousuke Terao,
Tomonori Tajima,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Fabrication of InP/InGaAs Undoped Channel MOSFET with Selectively Regrown N+-InGaAs Source Region,
2009 International Conference on Solid State Devices and Materials,
pp. 246-247,
Oct. 2009.
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Toru Kanazawa,
KAZUHITO FURUYA,
YASUYUKI MIYAMOTO,
Hisashi Saito,
kazuya wakabayashi,
Tomonori Tajima.
InP/InGaAs-channel MOSFET with MOVPE Selective Regrown Source,
IEEE 21th Conference on Indium Phosphide and Related Materials,
May 2009.
International Conference (Not reviewed / Unknown)
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K. Wakabayashi,
T. Kanazawa,
H. Saito,
R. Terao,
S. Ikeda,
Y. Miyamoto,
K. Furuya.
InP/In0.53Ga0.47As composite channel n-MOSFETwith heavily dopedregrown source/drain structure,
Int. Symposium on Silicon Nano Devices in 2030,
Oct. 2009.
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YASUYUKI MIYAMOTO,
Toru Kanazawa,
Hisashi Saito,
KAZUHITO FURUYA.
InGaAs/InP MISFET with epitaxially grown source,
2009 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices(AWAD),
June 2009.
Domestic Conference (Not reviewed / Unknown)
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Kazuya Wakabayashi,
Toru Kanazawa,
Hisashi Saito,
Tomonori Tajima,
Ryosuke Terao,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
I-V characteristics of undoped channel InP/InGaAs MOSFET with regrown source region,
The 70th Autumn Meeting, 2008; The Japan Society of Applied Physics,
pp. 1299,
Sept. 2009.
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Toru Kanazawa,
Hisashi Saito,
kazuya wakabayashi,
Tomonori Tajima,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
High mobility III-V MOSFET with n+-source regrown by MOSFET,
電気学会 電子・情報・システム部門大会,
Sept. 2009.
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kazuya wakabayashi,
Toru Kanazawa,
Hisashi Saito,
Tomonori Tajima,
Ryousuke Terao,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
「再成長ソースを有するアンドープチャネルInP/InGaAs MOSFETの電流特性,
第70回応用物理学会学術講演会,
Sept. 2009.
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Hisashi Saito,
Toru Kanazawa,
Yasuyuki Miyamoto,
Kazuhito Furuya.
Fabrication of vertical InGaAs-MOSFET with heterostructure launcher and intrinsic channel,
Technical Meeting on Electron Devices, IEE Jpn.,
Mar. 2009.
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Toru Kanazawa,
KAZUHITO FURUYA,
YASUYUKI MIYAMOTO,
Hisashi Saito,
kazuya wakabayashi,
Tomonori Tajima.
I-V characteristics of III-V MOSFET with MOVPE regrown source region,
The 56th Spring Meeting, 2009; The Japan Society of Applied Physics and Related Societies,
Mar. 2009.
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YASUYUKI MIYAMOTO,
Toru Kanazawa.
III-V ナノデバイス,
電子情報通信学会2009年全国大会,
Mar. 2009.
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