Journal Paper

• Shun-ichiro OHMI. 混晶化によるPtSiのコンタクト抵抗低減に関する検討, 電子情報通信学会技術研究報告. SDM, シリコン材料・デバイス, 一般社団法人電子情報通信学会, Vol. 111, No. 249, pp. 59-62, Oct. 2011.
• Ishikawa, J., Gao, J., Shun-ichiro OHMI. Work function modulation of PtSi by alloying with Yb, IEICE Electronics Express, Vol. 8, No. 1, pp. 33-37, 2011.
• Liao, M., Ishiwara, H., Shun-ichiro OHMI. Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator, IEICE Electronics Express, Vol. 8, No. 18, pp. 1461-1466, 2011.
• Sano, T., Shun-ichiro OHMI. Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations, IEICE Electronics Express, Vol. 8, No. 18, pp. 1492-1497, 2011.
• Shun-ichiro OHMI, Gao, J.. Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor, IEICE Electronics Express, Vol. 8, No. 20, pp. 1710-1715, 2011.
• Gao, J., Ishikawa, J., Shun-ichiro OHMI. A study on precise control of PtSi work function by alloying with Hf, IEICE Electronics Express, Vol. 8, No. 1, pp. 45-49, 2011.

Patent

• Shun-ichiro OHMI. 半導体装置の製造方法. Patent. Registered. 国立大学法人東京工業大学, セイコーエプソン株式会社. 2006/05/31. 特願2006-151441. 2007/12/13. 特開2007-324292. 特許第4854074号. 2011/11/04 2011.

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