|
Publication List - MASAHIRO ASADA 2011 (12 / 413 entries)
Journal Paper
-
H. Sugiyama,
A. Teranishi,
S. Suzuki,
M. Asada.
High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×105 A/cm2 Grown by Metal-Organic Vapor-Phase Epitaxy,
J. Crystal Growth,
vol. 336,
pp. 24-28,
Sept. 2011.
-
S. Suzuki,
K. Karashima,
K. Ishigaki,
M. Asada.
Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode,
Jpn. J. Appl. Phys.,
vol. 50,
p. 080211,
Aug. 2011.
-
H. Sugiyama,
S. Suzuki,
M. Asada.
Room-Temperature Resonant Tunneling Diode Terahertz Oscillator Based on Precisely Controlled Semiconductor Epitaxial Growth Technology,
NTT Technical Review,
vol. 9,
no. 10,
pp. 12-17,
July 2011.
-
M. Asada,
S. Suzuki.
Terahertz Oscillators Using Electron Devices - an Approach with Resonant Tunneling Diodes,
IEICE Electron. Express,
vol. 8,
no. 14,
pp. 1110-1126,
July 2011.
-
M. Shiraishi,
H. Shibayama,
K. Ishigaki,
S. Suzuki,
M. Asada,
H. Sugiyama,
H. Yokoyama.
High Output Power (~400 μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers,
Appl. Phys. Express,
vol. 4,
p. 064101,
May 2011.
-
M. Asada,
S. Suzuki.
Room-Temperature Terahertz Oscillation of Electron Devices,
J. Institute of Electrical Engineers of Japan,
vol. 131-A,
pp. 21-25,
Jan. 2011.
-
Shiraishi, M.,
Shibayama, H.,
Ishigaki, K.,
Suzuki, S.,
MASAHIRO ASADA,
Sugiyama, H.,
Yokoyama, H..
High output power (∼400 μW) oscillators at around 550 GHz using large area RTD and optimized antenna structure,
Conference Proceedings - International Conference on Indium Phosphide and Related Materials,
2011.
-
Ishigaki, K.,
Karashima, K.,
Shiraishi, M.,
Shibayama, H.,
Safumi Suzuki,
MASAHIRO ASADA.
Direct modulation of THz-oscillating resonant tunneling diodes,
IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves,
2011.
-
Teranishi, A.,
Shizuno, K.,
Suzuki, S.,
MASAHIRO ASADA,
Sugiyama, H.,
Yokoyama, H..
Fundamental oscillation up to 1.08 THz in resonant tunneling diodes with high indium composition transit layers,
Conference Proceedings - International Conference on Indium Phosphide and Related Materials,
2011.
-
Kaburaki, S.,
Safumi Suzuki,
MASAHIRO ASADA.
Intensity modulation of sub-terahertz oscillating resonant tunneling diode by irradiation of 1.55-μm laser,
IEEE Photonic Society 24th Annual Meeting, PHO 2011,
pp. 821-822,
2011.
Patent
[ Save as BibTeX ]
[ Paper, Presentations, Books, Others, Degrees: Save as CSV
]
[ Patents: Save as CSV
]
|