International Conference (Reviewed)

• N. Kise, S. Iwata, R. Aonuma, K. Ohsawa, Y. Miyamoto. GaAsSb/InGaAs Double-Gate Vertical Tunnel FET with a Subthreshold Swing of 68mV/dec at Room Temperature, Compound Semiconductor Week 2017, C804, May 2017.

Domestic Conference (Not reviewed / Unknown)

• Nobukazu Kise, Shinjiro Iwata, Ryousuke Aonuma, YASUYUKI MIYAMOTO. [8a-S22-1] 68mV/decのSSをもつGaAsSb/InGaAsダブルゲートトンネルFET, 第78回応用物理学会秋季学術講演会, Sept. 2017.
• Ryousuke Aonuma, Shinjiro Iwata, Nobukazu Kise, YASUYUKI MIYAMOTO. 68mV/decのSSを持つGaAsSb/InGaAs縦型ダブルゲートトンネルFET, 電気学会電子デバイス研究会, EDD-17-051, Mar. 2017.
• Shinjiro Iwata, Nobukazu Kise, Ryousuke Aonuma, YASUYUKI MIYAMOTO. [16p-412-5] GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける不純物濃度調整によるオン電流の向上, 第64回応用物理学会春季学術講演会, Mar. 2017.

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