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松浦賢太朗 2016年 研究業績一覧 (5件 / 63件)
論文
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S. Ishihara,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Wakabayashi,
A. Ogura.
Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast,
ECS J. Solid State Sci. Technol.,
Vol. 5,
No. 11,
2016.
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S. Ishihara,
Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2,
Japan Journal of Applied Physics,
Vol. 55,
2016.
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Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2,
Japan Journal of Applied Physics,
Vol. 55,
2016.
国際会議発表 (査読有り)
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J. Shimizu,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC,
International Conference on Solid State Devices and Materials,
Sept. 2016.
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K. Matsuura,
T. Ohashi,
I. Muneta,
S. Ishihara,
N. Sawamoto,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film,
Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC),
2016.
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