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TSAISung Lin 2022年 研究業績一覧 (5件 / 15件)
論文
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Takamasa Kawanago,
Ryosuke Kajikawa,
Kazuto Mizutani,
Sung-Lin Tsai,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact,
IEEE Journal of the Electron Devices Society,
IEEE,
Vol. 11,
p. 15-21,
Nov. 2022.
公式リンク
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Si-Meng Chen,
Sung Lin Tsai,
Kazuto Mizutani,
Takuya Hoshii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Edward Yi Chang,
Kuniyuki KAKUSHIMA.
GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation,
Japanese Journal of Applied Physics,
Volume 61,
June 2022.
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Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Tien-Kan Chung,
Edward Yi Chang,
Kuniyuki Kakushima.
Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films,
Japanese Journal of Applied Physics (JJAP),
Vol. 61,
May 2022.
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Ryota Shibukawa,
Sung Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Kuniyuki KAKUSHIMA.
Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films,
Japanese Journal of Applied Physics,
Volume 61,
Apr. 2022.
国内会議発表 (査読なし・不明)
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川那子 高暢,
梶川 亮介,
水谷 一翔,
Tsai Sung Lin,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用,
第83回応用物理学会秋季学術講演会,
Sept. 2022.
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