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角嶋邦之 2015年 研究業績一覧 (6件 / 821件)
論文
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T. Ohashi,
K. Suda,
S. Ishihara,
N. Sawamoto,
S. Yamaguchi,
K. Matsuura,
K. Kakushima,
N. Sugii,
A. Nishiyama,
Y. Kataoka,
K. Natori,
K. Tsutsui,
H. Iwai,
A. Ogura,
H. Wakabayashi.
Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs,
Japan Journal of Applied Physics,
Vol. 54,
No. 4S,
Mar. 2015.
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"Yusuke Takei",
"Masayuki Kamiya",
"Kazuo Tsutsui",
"Wataru Saito",
"Kuniyuki Kakushima",
"Hitoshi Wakabayashi",
"Yoshinori Kataoka",
"Hiroshi Iwai".
Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers,
Physica Status Solidi A,
Vol. 212,
No. 5,
pp. 1104-1109,
Feb. 2015.
国際会議発表 (査読有り)
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A. Nakajima,
S. Kubota,
R. Kayanuma,
K. Tsutsui,
K. Kakushima,
H. Wakabayashi,
H. Iwai,
S. Nishizawa,
H. Ohashi.
An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform,
2015 IEEE Compound Semiconductor IC Symposium (CSICS2015),
Oct. 2015.
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Akira Nakajima,
Shin-Ichi Nishizawa,
Hiromichi Ohashi,
Rei Kayanuma,
Kazuo Tsutsui,
Shunsuke Kubota,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai.
GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform,
The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015),
May 2015.
国際会議発表 (査読なし・不明)
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Shunsuke Kubota,
Rei Kayanuma,
Akira Nakajima,
Shin-ichi Nishizawa,
Shin-ichi Nishizawa,
Hiromichi Ohashi,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation,
2015 Material Research Society (MRS) Fall Meeting,
Nov. 2015.
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Yusuke Takei,
Tomohiro Shimoda,
Wataru Saito,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai.
Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns,
2015 Material Research Society (MRS) Fall Meeting,
Nov. 2015.
特許など
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角嶋邦之,
Dou Chunmeng,
AHMETPARHAT,
岩井洋,
片岡 好則.
抵抗変化型記憶装置.
特許.
登録.
国立大学法人東京工業大学, 東芝マテリアル株式会社.
2013/03/12.
特願2014-504932.
2015/08/03.
再表2013/137262.
特許第6082383号.
2017/01/27
2017.
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