論文

• Katsuro Hayashi, Hiroki Muramatsu, Satoru Matsuishi, Toshio Kamiya, Hideo Hosono. Humidity-Sensitive Electrical Conductivity in Ca₁₂Al_14-xSi_xO₃₂Cl_2+x (0 < x < 3.4) Ceramics, Electrochem. Solid-State Lett., 12, 2, J11-J13, Feb. 2009.
• Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Water-induced superconductivity in SrFe₂As₂, Phys. Rev. B, vol. 80, pp. 052501-1 - 4, 2009.
• Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono. Tin monoxide as an s-orbital-based p-type semiconductor:Electronic structures and TFT application, Physics Status Solidi A, pp. 1-5, 2009.
• Hiroshi Yanagi, Ki-Beom Kim, Ikue Koizumi, Maiko Kikuchi, Hidenori Hiramatsu, Masashi Miyakawa, Toshi Kamiya, Masahiro Hirano, Hideo Hosono. Low Threshold Voltage and Carrier Injection Properties of Inverted Organic Light-Emitting Diodes with [Ca₂₄Al₂₈O₆₄]⁴⁺(4e^-)Cathode and Cu_2-xSe Anode, J.Phys.Chem.C,, vol. 113, pp. 18379-18384, 2009.
• Takayoshi Katase, Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe₂As₂, Solid State Commun., vol. 149, pp. 2121-2124, 2009.
• Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Effects of post-annealing on (110) Cu₂O epitaxial lms and origin oflow mobility in Cu₂O thin-film transistor, phys. stat. sol. (a), vol. 206, pp. 2192-2197, 2009.
• Y. Kamihara, T. Watanabe, T. Nomura, S. W. Kim, T. Kamiya, M. Hirano, H. Hosono. Electromagnetic properties of undoped LaFePnO (Pn = P, As), J. Phys. Conf., vol. 150, p. 052090, 2009.
• Hitoshi Sugawara, Kenji Ishida, Yusuke Nakai, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono. Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and ³¹P-NMR Measurements, Journal of the Physical Society of Japan, vol. 78, pp. 113705-113708, 2009.
• K Igawa, K Arii, Y Takahashi, H Okada, H Takahashi, Y Kamihara, M Hirano, H Hiramatsu, T Watanabe, H Yanagi, T Kamiya, H Hosono, K Matsubayashi, Y. Uwatoko. Pressure effects on Tc of Iron-based Layered Superconductor LaTMPO (TM = Fe, Ni), J. Phys. Conf., vol. 150, pp. 052075-052078, 2009.
• Ayumu Sato, Mikio Shimada, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Amorphous In.Ga.Zn-O thin-film transistor with coplanar homojunction structure, Thin Solid Films, vol. 518, pp. 1309-1313, 2009.
• Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono. Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application, Phys. Status Solidi A, vol. 206, pp. 2187-2191, 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model, J. Display Technol., Vol. 5, 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping, J. Displ. Technol., vol. 5, p. 273, 2009.
• Hidenori Hiramatsu, Yoichi Kamihara, Hiroshi Yanagi, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application, J. Europ. Ceram. Soc., Vol. 29, pp. 245-253, 2009.
• Ayumu Sato, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Amorphous In–Ga–Zn–O coplanar homojunction thin-film transistor, Appl. Phys. Lett., Vol. 94, pp. 133502-1 - 3, 2009.
• Kentaro Kayanuma, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Epitaxial film growth and optoelectrical properties of layered semiconductors, LaMnXO (X = P, As, and Sb), J. Appl. Phys., Vol. 105, p. 073903, 2009.
• Hiroshi Yanagi, Takumi Watanabe, Katsuaki Kodama, Satoshi Iikubo, Shin-ichi Shamoto, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure, J. Appl. Phys, vol. 105, pp. 093936-1 - 8, 2009.
• Hideyuki Omura, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. First-principles study of native point defects in crystalline indium gallium zinc oxide, J. Appl. Phys., vol. 105, pp. 093712-1 - 8, 2009.
• Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Heteroepitaxial film growth of layered compounds with the ZrCuSiAs-type and ThCr2Si2-type structures: From Cu-based semiconductors to Fe-based superconductor, Physica C, vol. 469, pp. 657–666, 2009.
• Y.Adachi, S-W.Kim, T.Kamiya, H.Hosono. Bistable resistance switching in surface –oxidized C12A7:e-single-crystal, Mater.Sci. & Eng.B, vol. 161, pp. 76 -79, 2009.
• Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO₄, Mater. Sci. & Eng. B, vol. 161, pp. 66-70, 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Electronic structure of the amorphous oxide semiconductor a-InGaZnO4–x: Tauc–Lorentz optical model and origins of subgap states, Phys. Status Solidi A, vol. 206, pp. 860-867, 2009.
• Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors, Appl. Phys. Lett., vol. 95, pp. 013502-1 - 3, 2009.

国際会議発表 (査読有り)

• Toshio KAMIYA, Kenji NOMURA, Hideo HOSONO. Defects and doping in amorphous oxide semiconductor studied by first-principles calculations, Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics, 2B-I_1, Nov. 2009.
• Toshio KAMIYA, Hidenori HIRAMTSU, Hiroshi YANAGI, Hideo HOSONO. Electronic structures of defects and impurities in layered mixed anion compounds, Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics, P4-01, Nov. 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Impact of Subgap States on Peculiar Characteristics of Amorphous Oxide Thin-Film Transistor, Proc. IDW'09, 1673,, Nov. 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. Amorphous oxide semiconductor: Factors determining TFT performance and stability, 9th Int. Meeting on Inf. Display (IMID2009), 26-2, Oct. 2009.
• Toshio Kamiya, Kenji Nomura, Hideo Hosono. What have been clarified for amorphous oxide semiconductors?, IDMC•3DSA•Asia Display'09, Thu-S22-03, Oct. 2009.
• Toshio Kamiya, Hidenori Hiramatsu, Takayoshi Katase, Masahiro Hirano, Hideo Hosono. Impurities in FeAs-based superconductor, SrFe2As2, 3rd International Symposium on Science and Technology of Advanced Ceramics(STAC-3), June 2009.
• Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Epitaxial growth of GaN films on InGaZnO4 single crystalline buffer layer, 6th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-6), Apr. 2009.
• T. Katase, K. Nomura, H. Yanagi, H. Ohta, T. Kamiya, M. Hirano, H. Hosono. Atomic and electronic structures of ScAlMgO4 and over-grown GaN epitaxial film, 3rd International Symposium on Science and Technology of Advanced Ceramics (STAC-3),, 2009.
• Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Heteroepitaxial thin film growth of layered iron-based pnictide superconductors and their electrical properties, The 14th US-Japan Workshop on Advanced Superconductors, 2009.

国内会議発表 (査読有り)

• 篠崎智正, 野村研二, 片瀬貴義, 神谷利夫, 平野正浩, 細野秀雄. 層状酸化物結晶InGaZnO4の単結晶薄膜作製とバッファー層への応用, 薄膜材料デバイス研究会 第６回研究集会, Nov. 2009.
• 片瀬貴義, 平松秀典, 神谷利夫, 細野秀雄. 原子平坦面を有する鉄系高温超伝導体Co添加BaFe2As2薄膜の作製, 2009年秋季 第70回応用物理学会学術講演会, 2009.
• 平松秀典, 片瀬貴義, 神谷利夫, 平野正浩, 細野秀雄. SrFe2As2における水誘起超伝導, 2009年秋季 第70回 応用物理学会 学術講演会, 2009.
• 平松秀典, 片瀬貴義, 神谷利夫, 平野正浩, 細野秀雄. Superconductivity in Epitaxial Thin Films of Co-doped SrFe2As2 with Bilayered FeAs structures and their Magnetic Anisotropy, 2009年秋季 第70回 応用物理学会 学術講演会, 2009.
• 河村賢一, 平松秀典, 片瀬貴義, 神谷利夫, 平野正浩, 細野秀雄. 時間分解テラヘルツ分光によるFeAs系エピ膜の測定, 第56回応用物理学関係連合講演会, 2009.

国際会議発表 (査読なし・不明)

• Tetsuya Chiba, Toshio Kamiya, Hideo Hosono, Katsuro Hayashi. Low Temperature Oxidation of Si Using Novel Ceramic Atomic Oxygen Source, The Third International Conference on the Science and Technology for Advanced Ceramics (STAC-3), June 2009.

国内会議発表 (査読なし・不明)

• 千葉 哲也, 神谷 利夫, 細野 秀雄, 林 克郎. 固体酸化物を放出源とした真空中への原子状酸素の発生とその照射効果, 応用物理学会2009年秋季 学術講演会, Sept. 2009.

その他の論文・著書など

• 神谷利夫, 野村研二, 細野秀雄. アモルファス酸化物半導体の物性とデバイス開発の現状, 固体物理, vol. 44, pp. 621-633, 2009.
• Hidenori Hiramatsu, Yoichi Kamihara, Hiroshi Yanagi, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono. Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application, J. Euro. Ceram. Soc., vol. 29, pp. 245-253, 2009.

特許など

• 神谷利夫, 木村　睦, 中西　孝. 人工網膜. 特許. 公開. 国立大学法人東京工業大学, 学校法人龍谷大学. 2008/05/15. 特願2008-128621. 2009/11/26. 特開2009-273712. 2009.

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