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神谷利夫 2016年 研究業績一覧 (17件 / 797件)
論文
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Junghwan Kim,
Norihiko Miyokawa,
Takumi Sekiya,
Keisuke Ide,
Yoshitake Toda,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O,
Thin Solid Films,
Vol. 614,
pp. 84-89,
Sept. 2016.
公式リンク
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Taisuke Hatakeyama,
Hikaru Sato,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono.
Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2,
Appl. Phys. Express,
Vol. 9,
p. 055505,
2016.
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Takeshi Inoue,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Nonequilibrium Rock-Salt-Type Pb-Doped SnSe with High Carrier Mobilities ≈ 300 cm2/(Vs),
Chem. Mater.,
Vol. 28,
pp. 2278-2286,
2016.
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Kota Hanzawa,
Hikaru Sato,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono.
Electric field-induced superconducting transition of insulating FeSe thin film at 35 K,
Proc. Natl. Acad. Sci. USA,
Vol. 113,
pp. 3986-3990,
2016.
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Hiroshi Yanagi,
Yuki Iguchi,
Taiki Sugiyama,
Toshio Kamiya,
Hideo Hosono.
N-type conduction in SnS by anion substitution with Cl,
Appl. Phys. Express,
Vol. 9,
pp. 051201-1 - 3,
2016.
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Min Liao,
Seiji Takemoto,
Zewen Xiao,
Yoshitake Toda,
Tomofumi Tada,
Shigenori Ueda,
Toshio Kamiya,
Hideo Hosono.
Difficulty of carrier generation in orthorhombic PbO,
J. Appl. Phys,
Vol. 119,
pp. 165701-1 - 7,
2016.
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Christian A. Niedermeier,
Sneha Rhode,
Sarah Fearn,
Keisuke Ide,
Michelle A. Moram,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen,
Appl. Phys. Lett.,
Vol. 108,
pp. 172101-1 -5,
2016.
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Junghwan KIM,
Norihiko MIYOKAWA,
Keisuke IDE,
Hidenori HIRAMATSU,
Hideo HOSONO,
Toshio KAMIYA.
Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu,
J. Cerm. Soc. Jpn.,
Vol. 124,
pp. 532-535,
2016.
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Haochun Tang,
Keisuke Ide,
Hidenori Hiramatsu,
Shigenori Ueda,
Naoki Ohashi,
Hideya Kumomi,
Hideo Hosono,
Toshio Kamiya.
Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors,
Thin Solid Films,
Vol. 614,
73-78,
2016.
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渡邉暁,
伊藤和弘,
渡邉俊成,
中村伸宏,
宮川直通,
金正煥,
戸田喜丈,
神谷利夫,
細野秀雄.
非晶質C12A7エレクトライドの有機ELへの応用,
旭硝子研究報告,
Vol. 66,
pp. 26-31,
2016.
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Hikaru Sato,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono.
Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries,
Sci. Rep.,
Vol. 6,
p. 36828,
2016.
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Zewen Xiao,
Fan-Yong Ran,
Min Liao,
Shigenori Ueda,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Amorphous pnictide semiconductor BaZn2As2 exhibiting high hole mobility,
Appl. Phys. Lett.,
Vol. 109,
pp. 242105-1 - 4,
2016.
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Junghwan Kim,
Norihiko Miyokawa,
Keisuke Ide,
Yoshitake Toda,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor,
AIP Advances,
Vol. 6,
p. 015106,
2016.
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Fan-Yong Ran,
Zewen Xiao,
Hidenori Hiramatsu,
Keisuke Ide,
Hideo Hosono,
Toshio Kamiya.
SnS thin films prepared by H2S-free process and its p-type thin film transistor,
AIP Adv.,
Vol. 6,
pp. 015112-1 - 6,
2016.
著書
国際会議発表 (査読有り)
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Junghwan Kim,
Nobuhiro Nakamura,
Toshio Kamiya,
Hideo Hosono.
NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors,
Society for Information Display,
SID Symposium Digest of Technical Papers,
vol. 47,
pp. 951-953,
May 2016.
公式リンク
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Hideo Hosono,
Junghwan Kim,
Toshio Kamiya,
Nobuhiro Nakamura,
Satoru Watanabe.
Novel Inorganic Electron Injection and Transport Materials Enabling Large‐Sized Inverted OLEDs Driven by Oxide TFTs,
Society for Information Display (SID),
SID Symposium Digest of Technical Papers,
Wiley,
vol. 47,
pp. 401-404,
May 2016.
公式リンク
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