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金正煥 2017年 研究業績一覧 (22件 / 108件)
論文
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Takeshi Arai,
Soshi Iimura,
Junghwan Kim,
Yoshitake Toda,
Shigenori Ueda,
Hideo Hosono.
Chemical Design and Example of Transparent Bipolar Semiconductors,
Journal of the American Chemical Society,
Vol. 139,
pp. 17175-17180,
Nov. 2017.
公式リンク
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Junjie Wang,
Kota Hanzawa,
Hidenori Hiramatsu,
Junghwan Kim,
Naoto Umezawa,
Koki Iwanaka,
Tomofumi Tada,
Hideo Hosono.
Exploration of Stable Strontium Phosphide-Based Electrides: Theoretical Structure Prediction and Experimental Validation,
Journal of the American Chemical Society,
American Chemical Society,
Vol. 139,
No. 44,
pp. 15668–15680,
Oct. 2017.
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Nobuhiro Nakamura,
Junghwan Kim,
Koji Yamamoto,
Satoru Watanabe,
Hideo Hosono.
Organic light-emitting diode lighting with high out-coupling and reliability: Application of transparent amorphous ZnOeSiO2 semiconductor thick film,
Organic Electronics,
vol. 51,
pp. 103-110,
Sept. 2017.
公式リンク
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Naoto Watanabe,
Junghwan Kim,
Keisuke Ide,
Hidenori Hiramatsu,
Hiroshi Kumigashira,
Shigenori Ueda,
Hideo Hosono,
Toshio Kamiya.
Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass,
ECS Journal of Solid State Science and Technology,
Vol. 6,
pp. 410-414,
May 2017.
公式リンク
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Hongsheng Yang,
Junghwan Kim,
Koji Yamamoto,
Hideo Hosono.
Efficient charge generation layer for tandem OLEDs: Bi-layered MoO3/ZnO-based oxide semiconductor,
Organic Electronics,
No. 46,
pp. 133-138,
Apr. 2017.
公式リンク
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Dukyean Yoo,
Wonjin Jeon,
Junghwan Kim,
Youjung Yang,
Jungyol Jo.
ZnO thin-film transistor grown by rf sputtering using Zn metal target and oxidizer pulsing,
Journal of Ceramic Society of Japan,
vol. 125,
no. 3,
pp. 112-117,
Mar. 2017.
公式リンク
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Junghwan Kim,
Takumi Sekiya,
Norihiko Miyokawa,
Naoto Watanabe,
Koji Kimoto,
Keisuke Ide,
Yoshitake Toda,
Shigenori Ueda,
Naoki Ohashi,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor,
NPG Asia Materials,
vol. 9,
p. e359,
Mar. 2017.
公式リンク
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Hideo Hosono,
Junghwan Kim,
Yoshitake Toda,
Toshio Kamiya,
Satoru Watanabe.
Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs,
Proceedings of the National Academy of Sciences,
vol. 114,
no. 2,
pp. 233-238,
Jan. 2017.
公式リンク
著書
国際会議発表 (査読有り)
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Hideo Hosono,
Nobuhiro Nakamura,
Hongsheng Yang,
Junghwan Kim.
Novel Transparent Oxide Semiconductor, Zinc Silicates, for Electron Injection/Transport Layers in OLEDs,
Proc. IDW'17,
685-686,
Dec. 2017.
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Junghwan Kim,
Toshio Kamiya,
Hideo Hosono.
Material Design and Development of New Amorphous Oxide Semiconductors for Future Electronics,
ICMass/iLIM 2017,
Sept. 2017.
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Junghwan Kim,
Hideo Hosono,
Toshio Kamiya.
Development of Amorphous Gallium Oxide Semiconductor and its Application to future Electronic Devices,
International Workshop on Ga2O3 and Related Materials (IWGO),
Sept. 2017.
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Junghwan Kim,
Nobuhiro Nakamura,
Toshio Kamiya,
Hideo Hosono.
Material Design of Ultra-Wide Bandgap AOSs and their Applications in Photostable Electronic Devices,
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2017,
2017 24th International Workshop on. IEEE,
pp. 299-301,
Aug. 2017.
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Naoto Watanabe,
Keisuke Ide,
Junghwan Kim,
Takayoshi Katase,
Hidenori Hiramatsu,
Hideo Hosono,
Toshio Kamiya.
Electronic structure of amorphous oxide semiconductor-based light emitting thin film, A-GaOx:Eu,
The Tenth International Conference on the Science and Technology for Advanced Ceramics (STAC-10),
Aug. 2017.
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Koji Yamamoto,
Junghwan Kim,
Hideo Hosono.
Influence of deposition rate of MoOx on Hole Injection Property for Inverted OLEDs,
International Meeting on Information Display (IMID),
IMID 2017 DIGEST,
p. 432,
Aug. 2017.
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Junghwan Kim,
Toshio Kamiya,
Hideo Hosono.
Correlation between Electronic Structures and Instabilities in Amorphous Oxide Semiconductors: Strategies for High-Performance and Stable AOS-TFTs,
International Meeting on Information Display (IMID),
IMID 2017 DIGEST,
p. 266,
Aug. 2017.
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渡邉 脩人,
井手 啓介,
金 正煥,
平松 秀典,
片瀬 貴義,
細野 秀雄,
神谷 利夫.
Room Temperature Fabricated Multi-Color Liight-Emitting Thin Films Based on Ultra-Wide Bandgap Amorphous Oxide Semiconductor,
10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics,
July 2017.
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Y. Futakado,
N. Watanabe,
K. Ide,
J. Kim,
T. Katase,
H. Hiramats,
H. Hosono,
T. Kamiya.
Exploration of New Oxide Light-Emitting Semiconductor Thin Films Using Transition Metals,
10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics,
July 2017.
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Hongsheng Yang,
Junghwan Kim,
Hideo Hosono.
Realization of Low-Voltage Drop across Charge Generation Layer using Bi-layer Oxide Semiconductors for Tandem OLEDs,
Society for Information Display (SID),
SID Symposium Digest of Technical Papers,
Wiley,
Vol. 48,
No. 1,
pp. 1971-1973,
May 2017.
公式リンク
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Nobuhiro Nakamura,
Junghwan Kim,
Koji Yamamoto,
Satoru Watanabe,
Naomichi Miyakawa,
Toshio Kamiya,
Hideo Hosono.
OLED Lighting with High Out-Coupling Efficiency and Reliability,
Society for Information Display (SID),
SID Symposium Digest of Technical Papers,
Wiley,
Vol. 48,
No. 1,
pp. 2035-2038,
May 2017.
公式リンク
特許など
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細野秀雄,
金正煥,
宮川 直通 ,
中村 伸宏 ,
渡邉 暁 ,
永井 直美,
苗 偉 .
有機EL素子.
特許.
公開.
国立大学法人東京工業大学, AGC株式会社, 株式会社カネカ.
2017/05/19.
特願2017-100081.
2018/12/06.
特開2018-195512.
2018.
-
細野秀雄,
神谷利夫,
雲見日出也,
金正煥,
中村 伸宏,
渡邉 暁,
宮川 直通.
酸化物半導体化合物の層、酸化物半導体化合物の層を備える半導体素子、および積層体.
特許.
登録.
国立大学法人東京工業大学, AGC株式会社.
2017/02/23.
特願2018-503092.
2019/01/10.
再表2017/150351.
特許第7130209号.
2022/08/26
2022.
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