論文

• Junghwan Kim, Norihiko Miyokawa, Takumi Sekiya, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O, Thin Solid Films, Vol. 614, pp. 84-89, Sept. 2016.  公式リンク  
  
• Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor, AIP Advances, Vol. 6, p. 015106, 2016.
• Fan-Yong Ran, Zewen Xiao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya. SnS thin films prepared by H2S-free process and its p-type thin film transistor, AIP Adv., Vol. 6, pp. 015112-1 - 6, 2016.
• Christian A. Niedermeier, Sneha Rhode, Sarah Fearn, Keisuke Ide, Michelle A. Moram, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Solid phase epitaxial growth of high mobility La:BaSnO₃ thin films co-doped with interstitial hydrogen, Appl. Phys. Lett., Vol. 108, pp. 172101-1 -5, 2016.
• Junghwan KIM, Norihiko MIYOKAWA, Keisuke IDE, Hidenori HIRAMATSU, Hideo HOSONO, Toshio KAMIYA. Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu, J. Cerm. Soc. Jpn., Vol. 124, pp. 532-535, 2016.
• Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors, Thin Solid Films, Vol. 614, 73-78, 2016.

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