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後藤高寛 2017年 研究業績一覧 (12件 / 62件)
論文
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Takahiro Gotow,
Manabu Mitsuhara,
Takuya Hoshi,
Hiroki Sugiyama,
Mitsuru Takenaka,
Shinichi Takagi.
Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors,
Journal of Applied Physics,
122,
174503,
Nov. 2017.
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Takahiro Gotow,
Sachie Fujikawa,
Hiroki Fujishiro,
Mutsuo Ogura,
W. H. Chang,
Tetsuji Yasuda,
Tatsuro Maeda.
Surface cleaning and pure nitridation of GaSb by in-situ plasma processing,
AIP Advances,
7,
105117,
Oct. 2017.
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Shinichi Takagi,
Mengnan Ke,
Chih-Yu Chang,
Chiaki Yokoyama,
Masafui Yokoyama,
Takahiro Gotow,
Kouichi Nishi,
Sanghee Yoon,
Mitsuru Takenaka.
MOS interface defect control in Ge/III-V gate stacks,
ECS Transactions,
80,
4,
109-118,
Oct. 2017.
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Shinichi Takagi,
Daehwan Ahn,
Munetaka Noguchi,
Sanghee Yoon,
Takahiro Gotow,
Kouichi Nishi,
Minsoo Kim,
Taeeon Bae,
Takumi Katoh,
Ryo Matsumura,
Ryotaro Takaguchi,
Mitsuru Takenaka.
Low power Tunneling FET technologies using Ge/III-V materials,
ECS Transactions,
80,
4,
115-124,
Oct. 2017.
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高木信一,
安大煥,
野口宗隆,
後藤高寛,
西康一,
金閔洙,
竹中充.
Ge/Ⅲ-Ⅴ 族半導体を用いたトンネル FET 技術,
電子情報通信学会研究報告 信学技報,
vol. 116,
no. 448,
pp. 5-8,
Jan. 2017.
国際会議発表 (査読有り)
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Shinichi Takagi,
Mengnan Ke,
Chih-Yu Chang,
Chiaki Yokoyama,
Masafumi Yokoyama,
Takahiro Gotow,
Koichi Nishi,
Sanghee Yoon,
Mitsuru Takenaka.
(Invited) MOS Interface Defect Control in Ge/III-V Gate Stacks,
232nd Electrochemical Society (ECS) Meeting, D01: Semiconductors,
Oct. 2017.
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Shinichi Takagi,
Daehwan Ahn,
Munetaka Noguchi,
Sanghee Yoon,
Takahiro Gotow,
Kouichi Nishi,
Minsoo Kim,
Taeeon Bae,
Takumi Katoh,
Ryo Matsumura,
Ryotaro Takaguchi,
Mitsuru Takenaka.
(invited) Low Power Tunneling FET Technologies Using Ge/IIIV Materials,
232nd Electrochemical Society (ECS) Meeting,
Oct. 2017.
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Shinichi Takagi,
Daehwan Ahn,
Takahiro Gotow,
Kouichi Nishi,
Taeeon Bae,
Takumi Katoh,
Ryo Matsumura,
Ryotaro Takaguchi,
Kimihiko Kato,
Mitsuru Takenaka.
III-V/Ge-based tunneling MOSFET,
2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S),
Oct. 2017.
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Shinichi Takagi,
Daehwan Ahn,
Takahiro Gotow,
Munetaka Noguchi,
Kouichi Nishi,
SangHyeon Kim,
Masafumi Yokoyama,
Chih-Yu Chang,
Sanghee Yoon,
Chiaki Yokoyama,
Mitsuru Takenaka.
III-V-based low power CMOS devices on Si platform,
IEEE International Conference on Integrated Circuit Design & Technology (ICICDT),
May 2017.
国内会議発表 (査読なし・不明)
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後藤高寛,
満原学,
星拓也,
杉山弘樹,
竹中充,
高木信一.
ソース不純物濃度がGaAsSb/InGaAs 縦型トンネルFETの電気特性に与える影響,
第64回 応用物理学会春季学術講演会,
Mar. 2017.
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後藤高寛,
満原学,
星拓也,
杉山弘樹,
竹中充,
高木信一.
極薄InGaAs界面層を有するGaAsSb MOS界面特性の評価,
電子デバイス界面テクノロジー研究会,
Jan. 2017.
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高木信一,
安大煥,
野口宗隆,
後藤高寛,
西康一,
金閔洙,
竹中充.
Ge/III-V 族化合物半導体を用いたトンネルFET技術,
電子情報通信学会 SDM研究会・応用物理学会シリコンテクノロジー分科会研究会 「先端CMOSデバイス・プロセス技術(IEDM特集)」,
Jan. 2017.
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