論文

• Junichi Hasegawa, Loris Pace, Luong Viêt Phung, Mutsuko Hatano, Dominique Planson. Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation, IEEE TRANSACTIONS ON ELECTRON DEVICES, Vol. 64, No. 3, pp. 1203-1208, Feb. 2017.
• M. Shimizu, T. Makino, T. Iwasaki, J. Hasegawa, K. Tahara, W. Naruki, H. Kato, S. Yamasaki, M. Hatano. Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p-i-n junction, Diamond Relat. Mater., Vol. 63, pp. 192-196, Mar. 2016.
• J. Hasegawa, M. Furuhashi, S. Nakata, T. Iwasaki, T. Kodera, T. Nishimura, M. Hatano, M Noguchi. Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy, Jpn. J. Appl. Phys., Vol. 54, pp. 04DP05, Jan. 2015.
• J.Hasegawa, K.Konishi, Y.Nakamura, K.Otsuka, S.Nakata, Y. Nakamine, T. Nishimura, M. Hatano. Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation, Materials Science Forum, Vol. 828, pp. 778-780, Feb. 2014.

国際会議発表 (査読有り)

• M.Shimizu, T.Makino, R.G.Amici, T.Iwasaki, J.Hasegawa, K.Tahara, W.Naruki, H.Kato, D.Takeuchi, S.Yamasaki, M.Hatan. Charge state modulation of nitrogen vacancy center in diamond n-i-n junction, Hasselt Diamond Workshop 2016, Mar. 2016.
• J. Hasegawa, T. Iwasaki, T. Kodera, M. Hatano. Measurement of the SiO2/SiC interface state density in a wide energy-level range using capacitance transient spectroscopy, The Fourth International Education Forum on Environment and Energy Science(ACEEES), Dec. 2015.
• Junichi Hasegawa, Munetaka Noguchi, Masayuki Furuhashi, Shuhei Nakata, Takayuki Iwasaki, Tetsuo Kodera, Tadashi Nishimura, Mutsuko Hatano. Measurement of the SiO2/SiC interface state density in a wid energy-level range using capacitance transient spectroscopy, 16th ICSCRM2015, Oct. 2015.
• J. Hasegawa, T. Kodera, T. Iwasaki, M. Hatano. Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS, The Third International Education Forum on Environment and Energy Science, Dec. 2014.
• J. Hasegawa, M.Noguchi, M.Furuhashi, S. Nakata, T.Iwasaki, T.Kodera, T.Nishimura, M.Hatano. Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS, SSDM 2014, Sept. 2014.
• J. Hasegawa, M. Noguchi, M. Furuhashi, S. Nakata, T. Iwasaki, T. Kodera, T. Nishimura, M. Hatano. Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS, 2014 International Conference on Solid State Devices and Materials (SSDM 2014), Sept. 2014.
• J. Hasegawa, K.Konishi, Y.Nakamura, K.Otsuka, Y.Nakamine, T.Nishimura, M.Hatano. Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation, ICSCRM2013, Oct. 2013.

国内会議発表 (査読有り)

• 清水麻希, 牧野俊晴, 岩崎孝之, 長谷川淳一, 田原康佐, 成木 航, 加藤宙光, 山崎 聡, 波多野睦子. ダイヤモンドp-i-n接合におけるNVセンタの電荷状態の変化, 第２９回ダイヤモンドシンポジウム, Nov. 2015.
• M.Shimisu, T.Makino, T.Iwasaki, J.Hasegawa, K.Tahara, W.Naruki, H.Kato, S.Yamasaki, M.Hatano. Fabrication of n-p-n junctions for stable negatively charged nitrogen vacancy centers, 9th International Conference on New Diamond and Nano Carbons 2015, May 2015.

国際会議発表 (査読なし・不明)

• Junichi Hasegawa, Loris Pace, Luong Viêt Phung, Mutsuko Hatano, Dominique Planson. Simulation-based study on the optical beam intensity dependence of the optically triggered 4H-SiC thyristors turn-on operation, SSDM2016, Sept. 2016.
• J. Hasegawa, T. Iwasaki, M. Hatano. Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation, The Second International Education Forum on Environment and Energy Science (ACEEES), Dec. 2013.

国内会議発表 (査読なし・不明)

• 清水 麻希, 牧野 俊晴, Amici Renato Goes, 岩崎 孝之, 長谷川 淳一, 田原 康佐, 成木 航, 加藤 宙光, 竹内 大輔, 山崎 聡, 波多野 睦子. ダイヤモンドnin接合におけるNVセンタの電荷状態の制御, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 国崎 愛子, 長谷川 淳一, 岩崎 孝之, 野口 宗隆, 古橋 壮之, 渡邊 寛, 中田 修平, 小寺 哲夫, 波多野 睦子. 界面準位密度を考慮したSiC-MOSFET伝達特性モデルの構築, 第63回応用物理学会春季学術講演会, Mar. 2016.
• 長谷川淳一, 須藤建瑠, 岩崎孝之, 小寺哲夫, 古橋壮之, 野口宗隆, 中田修平, 西村正, 波多野睦子. DLTS法による窒化後酸化SiC-MOSFETの界面準位評価, 第75回応用物理学会秋季学術講演会, Sept. 2014.
• 長谷川淳一, 野口宗隆, 中田修平, 須藤建瑠, 岩崎孝之, 小寺哲夫, 古橋壮之, 西村正, 波多野睦子. DLTS法による窒化後酸化SiC-MOSFETの界面準位評価, 第75回応用物理学会秋季学術講演会, Sept. 2014.

学位論文

• Study of the influence of crystal defects and interface traps on SiC power device characteristics,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2017/03/26, 
• Study of the influence of crystal defects and interface traps on SiC power device characteristics,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2017/03/26,   
• Study of the influence of crystal defects and interface traps on SiC power device characteristics,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2017/03/26,   
• Study of the influence of crystal defects and interface traps on SiC power device characteristics,  Outline,  Doctor (Engineering),  Tokyo Institute of Technology,  2017/03/26,   

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