論文

• K. Ro, K. Nakahata, T. Kamiya, C.M. Fortmann, I. Shimizu. Microstructure and photovoltaic properties of low temperature polycrystalline silicon solar cells fabricated by VHF-GD CVD using fluorinated gas, to be published in Journal of Non-Crystalline Solids, 2000.
• Wataru Futako, Toshio Kamiya, Charles M. Fortmann, Isamu Shimizu. The structure of 1.5 to 2.0 eV Band Gap Amorphous Silicon Films Prepared by Chemical Annealing, to be published in Journal of Non-Crystalline Solids, 2000.
• Toshio Kamiya, Kouichi Nakahata, Toshiyuki Sameshima, Kazuyoshi Ro, Atsushi Suemasu, Charles M. Fortmann, Isamu Shimi. Growth and Transport Property of Polycrystalline Silicon Fabricated with Intentional Orientation Control on Glass, to be published in Key Engineering Materials, 2000.
• T. Kamiya, K. Nakahata, C.M. Fortmann, I. Shimizu. Structural properties of polycrystalline silicon films having varied textures fabricated with intentional control of surface reactions using SiF4/H2/SiH4 mixing gas, to be published in Journal of Non-Crystalline Solids, 2000.
• Toshio Kamiya, Takashi Komaru, Satoshi Shimizu, Mika Kanbe, Charles M. Fortmann, Isamu Shimizu. Transparent Conductive Oxide for Solar Cells Having Resistance to High Density Hydrogen Plasma and/or High Temperature, to be published in Key Engineering, 2000.
• K. Nakahata, T. Kamiya, C.M. Fortmann, I. Shimizu, H. Stuchlíková, A.Fejfar, J. Koèka. Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition using fluorinated source gas, to be published in Journal of Non-Crystalline Solids, 2000.
• Toshio KAMIYA, Kouichi NAKAHATA, Kazuyoshi RO, Charles Michael FORTMANN, Isamu SHIMIZU. Comparison of Microstructure and Crystal Structure of Polycrystalline Silicon Exhibiting Varied Textures Fabricated by Microwave and Very High Frequency Plasma Enhanced Chemical Vapor Deposition and their transport properties, Jpn. J. Appl. Phys., Vol. 38, No. 10, pp. 5750, 1999.
• T. Kamiya, K. Nakahata, K. Ro, C. M. Fortmann, I. Shimizu. HIGH RATES AND VERY LOW TEMPERATURE FABRICATION OF POLYCRYSTALLINE SILICON FROM FLUORINATED SOURCE GAS, Mater. Res. Soc. Symp. Proc., 1999.
• Toshio KAMIYA, Kouichi NAKAHATA, Kazuyoshi RO, Jurat TOHTI, Charles Michael FORTMANN, Isamu SHIMIZU. Structure Control of Polycrystalline Silicon Films on Glass Substrates and their properties, Key Engineering Materials, Vol. 169-170, pp. 171, 1999.
• 神谷利夫, 前田佳輝, 中畑浩一, 小丸貴史, C.M.Fortmann, 清水勇. ガラス基板上に低温成長させた多結晶シリコン薄膜の構造に与えるハロゲンの影響, J. Ceram. Soc. Jpn., Vol. 107, pp. 1099, 1999.
• T. Kamiya, K. Nakahata, A. Miida, C. M. Fortmann, I.Shimizu. CONTROL OF ORIENTATION FROM RANDOM TO (220) OR (400) ORIENTATION IN POLYCRYSTALLINE SILICON FILMS, Thin Solid Films, Vol. 337, pp. 18, 1999.
• K. Nakahata, A. Miida, T. Kamiya, C. M. Fortmann, I. Shimizu. CARRIER TRANSPORT, STRUCTURE AND ORIENTATION IN POLYCRYSTALLINE SILICON ON GLASS, Thin Solid Films, Vol. 337, pp. 45, 1999.
• Toshio KAMIYA, Kazuyoshi RO, Charles Michael FORTMANN, Isamu SHIMIZU. Role of Seed Crystal Layer in Two-Step-Growth Procedure for Low Temperature Growth of Polycrystalline Silicon Thin Film from SiF4 by a Remote-Type Microwave Plasma Enhanced Chemical Vapor Deposition, Jpn. J. Appl. Phys., Vol. 38, No. 10, pp. 5762, 1999.
• M. Kanbe, T. Komaru, K. Fukutani, T. Kamiya, C.M. Fortmann, I. Shimizu. : Amorphous Silicon Solar CELL Techniques for High Temperature and/or Reactive Deposition Conditions, Mater. Res. Soc. Symp. Proc., 1999.
• Wataru FUTAKO, Kunihiko YOSHINO, Charles Michael FORTMANN, Isamu SHIMIZU. Wide band gap amorphous silicon thin films prepared by chemical annealing, J. Appl. Phys., Vol. 85, No. 2, pp. 812, 1999.
• Isamu Shimizu. Formation of Stable Si-network at Low Ts by Controlling Chemical Reaction at Growing Surface, 11th International Photovoltaic Science and Engineering Conference Technical Digest, pp. 181, 1999.
• D. Matsuura, T. Kamiya, C. M. Fortmann, I. Shimizu. Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD, 11th International Photovoltaic Science and Engineering Conference Technical Digest, 1999.
• A. Suemasu, K. Nakahata, K. Ro, T. Kamiya, C.M.Fortmann, I.Shimizu. In-Situ hydrogen plasma treatment for improved transport of (400) oriented polycrystalline silicon films, 11th International Photovoltaic Science and Engineering Conference Technical Digest, 1999.
• T. Komaru, H. Sato, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu. Improved TCO Coated Glass Substrates for High Deposition Temperature, Narrow Gap a-Si:H Solar Cells Techniques, 1999.
• H. Sato, K. Fukutani, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu. High Quality Narrow Gap (~1.52eV) a-Si:H with Improved Stability Fabricated by Excited Inert Gas Treatment, 11th International Photovoltaic Science and Engineering Conference Technical Digest, 1999.
• Satoshi Shimizu, Takashi Komaru, Kojiro Okawa, Toshio Kamiya, C.M.Fortmann, Isamu Shimizu. Fabrication of Solar Cells Having SiH2Cl2 Based I-layer Materials, Jpn. J. Appl. Phys., Vol. 38, No. 12, 1999.
• Satoshi Shimizu, Kojiro Okawa, Toshio Kamiya, C.M.Fortmann, Isamu Shimizu. AMORPHOUS SILICON SOLAR CELLS TECHNIQUES FOR REACTIVE CONDITIONS, Mater. Res. Soc. Symp. Proc, 1999.
• Takashi KOMARU, Satoshi SHIMIZU, Mika KANBE, Yoshiteru MAEDA, Toshio KAMIYA, Charles Michael FORTMANN, I. SHIMIZU. Optimization of Transparent Conductive Oxide for Improved Resistance to Reactive and/or High Temperature Optoelectronic Device Processing, Jpn. J. Appl. Phys., Vol. 38, No. 10, pp. 5796, 1999.
• K. Ohkawa, S. Shimizu, H. Sato, K. Komaru, W. Futako, T. Kamiya, C.M. Fortmann, I. Shimizu. Stability of a-Si:H Solar Cells Deposited by Ar-Treatment or by ECR Techniques, 11th International Photovoltaic Science and Engineering Conference Technical Digest, 1999.
• Satoshi Shimizu, Kojiro Okawa, Toshio Kamiya, C.M.Fortmann, Isamu Shimizu. Properties of Amorphous Silicon Solar Cells Fabricated from SiH2Cl2, 11th International Photovoltaic Science and Engineering Conference Technical Digest, 1999.
• T. Kamiya, K. Nakahata, C.M. Fortmann, I. Shimizu. Structural properties of polycrystalline silicon films having varied textures fabricated with intentional control of surface reactions using SiF4/H2/SiH4 mixing gas, to be published in Journal of Non-Crystalline Solids, 1999.
• K. Nakahata, T. Kamiya, C.M. Fortmann, I. Shimizu, H. Stuchlíková, A.Fejfar, J. Koèka. Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very high frequency plasma enhanced chemical vapor deposition using fluorinated source gas, to be published in Journal of Non-Crystalline Solids, 1999.
• K. Ro, K. Nakahata, T. Kamiya, C.M. Fortmann, I. Shimizu. Microstructure and photovoltaic properties of low temperature polycrystalline silicon solar cells fabricated by VHF-GD CVD using fluorinated gas, to be published in Journal of Non-Crystalline Solids, 1999.
• Wataru Futako, Toshio Kamiya, Charles M. Fortmann, Isamu Shimizu. The structure of 1.5 to 2.0 eV Band Gap Amorphous Silicon Films Prepared by Chemical Annealing, to be published in Journal of Non-Crystalline Solids, 1999.
• Toshio Kamiya, Kouichi Nakahata, Toshiyuki Sameshima, Kazuyoshi Ro, Atsushi Suemasu, Charles M. Fortmann, Isamu Shimi. Growth and Transport Property of Polycrystalline Silicon Fabricated with Intentional Orientation Control on Glass, to be published in Key Engineering Materials, 1999.
• Toshio Kamiya, Takashi Komaru, Satoshi Shimizu, Mika Kanbe, Charles M. Fortmann, Isamu Shimizu. Transparent Conductive Oxide for Solar Cells Having Resistance to High Density Hydrogen Plasma and/or High Temperature, to be published in Key Engineering, 1999.
• ISAMU SHIMIZU. Progress in growth of high quality amorphous silicon materials, Conf. Rec. 26th IEEE Photovaltaic Specialists Conf. -1997, pp. 581-586, 1997.
• ISAMU SHIMIZU. Intentional reconstruction of silicon network on the surface and within sab-surface by H and Ar, Mat. Res. Soc. Symp. Proc., Vol. 467, pp. 495-500, 1997.
• ISAMU SHIMIZU. Growth of polycrystalline silicon thin films on glass, Thin Solid Films, Vol. 296, pp. 2-6, 1997.
• ISAMU SHIMIZU. Fabrication of High Quality Silicon Related Films with Band-gap of 1.5eV by Chemical Annealing, Jour. on Non-Cryst. Solids., No. 198-200, pp. 1046-1049, 1996.
• ISAMU SHIMIZU. Improved Stability of a-Si=H Fabricated from SiH┣D22┫D2Cl┣D22┫D2 by ECR Hydrogen Plasma, Jour. of Non-Cryst. Solids, No. 198-200, pp. 419-422, 1996.
• ISAMU SHIMIZU. Compositional Modulation and its Optoelectric Properties of Zn(S, Se, Te)Crystals Grown by Hydrogen Radical-Enhanced CVD., M. R. S. Symp. Proc., Vol. 417, pp. 253-258, 1996.
• ISAMU SHIMIZU. WIDE-GAP a-Si : H FABRICATED BY CONTOROLLING VOIDS, M. R. S. Symp. Proc., Vol. 420, pp. 335,340, 1996.
• ISAMU SHIMIZU. Fabrication of Polycrystalline Sillicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen, M. R. S., Vol. 403, pp. 391-396, 1996.
• ISAMU SHIMIZU. Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si : H, M. R. S. Symp. Proc, Vol. 420, pp. 431-436, 1996.
• ISAMU SHIMIZU. Fabrication of High-Quality Poly-Si thin Films Combined with in situ real-time spectroscopic ellipsometry, Jour. of Non-Cryst. Solids., No. 198-200, pp. 883-886, 1996.
• ISAMU SHIMIZU. Roles of atomic hydrogen in chemical annealing, Jpn. J. Appl. Phys., Vol. 34, No. 2A, pp. 442-449, 1995.
• ISAMU SHIMIZU. Control of grain size and texture of poly-Si with atomic hydrogen under in situ ellipsometric observation, Mat. Res. Soc. Symp. Proc., Vol. 358, pp. 871-876, 1995.
• ISAMU SHIMIZU. Carrier transport properties of indine-doped (ZnS)┣D23┫D2(ZnSe)┣D242┫D2 ordered aloys grown by atomic layer epitaxy, J. Appl. Phys., Vol. 77, No. 8, pp. 3927-3933, 1995.
• ISAMU SHIMIZU. In Situ Realtime Studies of the Formation of Polycrystalline Silicon Films on Glass Grown by a Layer-by -Layer Technique, Appl.Phys.Lett.,, Vol. 66, No. 25, pp. 3441-3443, 1995.
• 清水勇. ジクロロシランからのシリコン薄膜の形成, 応用物理, Vol. 61, No. 10, pp. 1023-1027, 1995.
• ISAMU SHIMIZU. Relatin Between Defects Density and Local Stwctures of A-Siih, Mat.Res.Soc.Symp.Proc., Vol. 377, pp. 191-196, 1995.
• 清水勇. 光伝導効果とその応用, 静電気学会誌, Vol. 20, No. 1, pp. 35-41, 1995.
• ISAMU SHIMIZU. In Situ Obseruation of Surface of Semiconductive Thin Films Using Spectroscopic Ellipsometry, 応用物理, Vol. 65, No. 3, pp. 237-243, 1995.
• ISAMU SHIMIZU. Fabrication of highly stable a-Si : H from chlorinated precursors, Mat. Res. Soc. Symp. Proc., Vol. 336, pp. 239-244, 1994.
• ISAMU SHIMIZU. Fabrication of highly stable a-Si : H from halogenous silanes, 2nd Int. Conf. on Reactive Plasma, pp. 89-94, 1994.
• ISAMU SHIMIZU. Preparation and properties of(ZnS)┣D2n┫D2(ZnSe)┣D2m┫D2(n=1-4) ordered alloys fabricated by plasma enhanced low temperature growth technique, 2nd Int. Conf. on Reactive Plasma, pp. 653-656, 1994.
• ISAMU SHIMIZU. Structure of polycrystalline silicon thin film fabricated from fluorinated precursors by layer-by-layer technique, Jpn. J. Appl. Phys., Vol. 33, No. 1A, pp. 51-56, 1994.
• ISAMU SHIMIZU. Si epitaxy below 400゜C from fluorinated precusors SiF┣D2n┫D2H┣D2m┫D2(┣D2n┫D2+┣D2m┫D2≦3) under in situ observation with ellipsometry, Jpn. J. Appl. Phys., Vol. 33, No. 2, pp. 956-961, 1994.
• ISAMU SHIMIZU. Structures and properties of(ZnS)┣D2n┫D2(ZnSe)┣D2m2┫D2(┣D2n┫D2=1┣D2-4┫D2) ordered alloys grow by atomic layer epitaxy, Jpn. J. Appl. Phys., Vol. 33, No. 5A, pp. 2474-2478, 1994.
• ISAMU SHIMIZU. Preparation and properties of(ZnS)┣D23┫D2(ZnSe)┣D242┫D2 ordered alloys fabricated by plasma-enhanced low-temperature growth technique, Jpn. J. Appl. Phys., Vol. 33, No. 7B, pp. 4381-4384, 1994.
• ISAMU SHIMIZU. Carrier transport and structural properties of polysilicon films prepared by layer-by-layer technique, Solar energy materials and solar cells, Vol. 34, pp. 271-276, 1994.
• ISAMU SHIMIZU. Fabrication of stable hydrogenated amorphous silicon from SiH┣D22┫D2Cl┣D22┫D2 by ECR-hydrogen-plasma, Solar energy materials and solar cells, Vol. 34, pp. 517-523, 1994.
• ISAMU SHIMIZU. Carrier transport in polycrystalline silicon films deposited by a layer-by-layer technique, J. Appl. Phys., Vol. 76, No. 8, pp. 4728-4733, 1994.
• ISAMU SHIMIZU. Hydrogen radical enchanced chemical vapor deposition (HR-CVD) as a novel technique for the growth of ZnSe and related alloy at low temperature, New Functionality Materials, Vol. A, pp. 163-168, 1993.
• ISAMU SHIMIZU. Carrier transport and structural properties of polycrystalline silicon films prepare by layer-by-layer technique, Technical digest of the international PVSEC-7, pp. 239-240, 1993.
• ISAMU SHIMIZU. Fabrication of stable hydrogenated amorphous silicon from SiH┣D22┫D2Cl┣D22┫D2 by ECR-hydrogen-plasma, Technical digest of the international PVSEC-7, pp. 295-296, 1993.
• ISAMU SHIMIZU. Low temperature growth of ZnS┣D2X┫D2Se┣D21-X┫D2 alloys fabricated by hydrogen radical enhanced CVD in an atomic loyer opitaxy mode, J. Appl. Plys, Vol. 24, No. 9, pp. 5510-5515, 1993.
• ISAMU SHIMIZU. in situ ellipsometric observation of the growth of silicon thin films from fluorinated precursors, SiFnHm, Jpn. J. Appl. Plys, Vol. 32, No. 6A, pp. 2607-2612, 1993.
• ISAMU SHIMIZU. Fabrication of high quality poly-si from fluorinaled precursors, MRS. Symp. Proc., No. 297, pp. 79-89, 1993.
• ISAMU SHIMIZU. Stable a-Si : H fabricated from halogenous silane by ECR Hydrogen plasma, J. Non-cryst. Solids, No. 164-166, pp. 47-50, 1993.
• ISAMU SHIMIZU. TEM study and Hall measurement of nc-Si prepared by controlled deposition, Mat. Res. Soc. Symp. Proc., Vol. 283, pp. 591-596, 1993.
• ISAMU SHIMIZU. Structural and electrical propertes of n-Type Poly-Si films prepared by Layer-by-Layer technique, Jpn. J. Appl. Phys., Vol. 32, No. 8, pp. 3370-3375, 1993.
• ISAMU SHIMIZU. Preparation of high-quality microcrystalline silicon from fluorinated precursors by a Layer-by-Layer technique, Jpn. J. Appl. Phys., Vol. 32, No. 4, pp. 1539-1545, 1993.
• ISAMU SHIMIZU. Highly textured microcrystalline Si-thin film fabricated by Layer-by-Layer technique, Mat. Res. Soc. Symp. Proc., Vol. 283, pp. 489-494, 1993.
• ISAMU SHIMIZU. In situ ellipsometric observation of the growth of crystalline silicon from fluorinated precursors, Mat. Res. Soc. Symp. Proc., Vol. 297, pp. 19-24, 1993.
• ISAMU SHIMIZU. Low-temperature growth of ZnSe-based psudo-morphic structures by hydrogen-radical-enranced chemical vapor depositin, J. Cryst. Growth, pp. 117, 1992.
• ISAMU SHIMIZU. A novel preparation technique for preparing hydrogenated amorphsus silicon network with a more rigid and stable Sinetwork, Applied Physics Letters, Vol. 59, pp. 9, 1991.
• ISAMU SHIMIZU. Narrow Band-Gap a-Si : H with Improved Minority Carrier-Transport Prapared by Chemical Annesling, Jpn. J. Appl. Phys, 1991.
• ISAMU SHIMIZU. Control of nucleation and growth in the preparation of crystals by plasma-enhanced chemical vapor deposition, Philosophical Magazine B, Vol. 63, pp. 1, 1991.
• ISAMU SHIMIZU. Formation of Si-network by neans of Chemical reactions, 応用物理, Vol. 59, pp. 12, 1990.
• ISAMU SHIMIZU. Prepation of μc-Si : H/a-SiH multilsyers and their opto electic properties, Jpn. J. Appl. Phys, Vol. 29, pp. 6, 1990.
• ISAMU SHIMIZU. The effect of space charge on carrier transport in a-Si : H : F/a-SiGex : H : F multilayer structures, Phil. Mag. B, Vol. 60, pp. 1, 1989.
• ISAMU SHIMIZU. Chemical Reaxtions for Propagation of Si-network, J. Non-cryst Solids, pp. 114, 1989.

著書

• 清水勇. 水素化アモルファスシリコンの新製膜法, 応用物理, 応用物理, Vol. 68, No. 10, pp. 1128, 1999.
• 清水勇. 原子を並べて人工物質をつくる, 物質(もの)とは-その機能と変換-第11回「大学と科学」公開シンポジウム組織委員会編, 物質(もの)とは-その機能と変換-第11回「大学と科学」公開シンポジウム組織委員会編, pp. 162-170, 1997.
• ISAMU SHIMIZU. Amorphous Materials and Physics Issues in Electrophotography, Artech House, Inc, Artech House, Inc, 1991.
• ISAMU SHIMIZU. Electrophotography, Semiconductors and Semimetals, Academic Press, Semiconductors and Semimetals, Academic Press, pp. 4D, 1984.

学位論文

• 光発消色記録材料に関する研究,  本文,  工学博士,  東京工業大学,  1969/03/26,   
• ,  Master of Engineering,  東京工業大学,  1966/--/--, 

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