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Publication List - Mutsuko Hatano 2014 (42 / 677 entries)
Journal Paper
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S. Furuyama,
K. Tahara,
T. Iwasaki,
A. Matsutani,
M. Hatano.
Fluorinated Graphene FETs Controlled by Ionic Liquid Gate,
IEEE J. Display Technolog,
Vol. 10,
pp. 962-965,
Oct. 2014.
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T. Yatsui,
D. Takeuchi,
S. Koizumi,
kazuki satou,
K. Tsuzuki,
T. Iwasaki,
M. Hatano,
T. Makino,
M. Ogura,
Hiromitsu Kato,
H. Okushi,
S. Yamasaki.
Polarization-controlled dressed-photon and phonon etching of patterned diamond structures,
Phys. Status. Solidi A,
Vol. 211,
pp. 2339-2342,
July 2014.
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T. Fukui,
Y. Doi,
T. Miyazaki,
Y. Miyamoto,
M.Hatano,
Y. Suzuki,
N. Mizuochi.
Perfect selective alignment of nitrogen-vacancy centers in diamond,
Applied Physics Express,
Vol. 7,
pp. 055201-1-4,
Apr. 2014.
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K. Shinoda,
T.Nakajima,
M. Hatano,
T. Tsuchiya.
Design of process diagnostics for excimer laser irradiation of oxide thin films,
Japanese Journal of Applied Physics,
Vol. 53,
pp. 05FB08-1~05FB08-6,
Apr. 2014.
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J.Hasegawa,
K.Konishi,
Y.Nakamura,
K.Otsuka,
S.Nakata,
Y. Nakamine,
T. Nishimura,
M. Hatano.
Investigation of Stacking Faults Affecting on Reverse Leakage Current of 4H-SiC Junction Barrier Schottky Diodes Using Device Simulation,
Materials Science Forum,
Vol. 828,
pp. 778-780,
Feb. 2014.
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J. T. Song,
T. Iwasaki,
H. Hatano.
Pt co-catalyst effect on photoelectrochemical properties of 3C-SiC photo-anode,
Jpn. J. Appl. Phys.,
Vol. 53,
pp. 05FZ04-1~05FX04-4,
2014.
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Takayuki Iwasaki,
Junya Yaita,
Hiromitsu Kato,
Toshiharu Makino,
Masahiko Ogura,
Daisuke Takeuchi,
Hideyo Okushi,
Satoshi Yamasaki,
Mutsuko Hatano.
600 V Diamond Junction Field-Effect Transistors Operated at 200 °C,
IEEE Electron Device Lett.,
Vol. 35,
pp. 241-243,
2014.
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T.Miyazaki,
Y.Miyamoto,
T.Makino,
H.Kato,
S.Yamasaki,
T.Fukui,
Y.Doi,
N.Tokuda,
M.Hatano,
N.Mizuochi.
Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond,
Appl. Phys. Left.,
Vol. 105,
pp. 261601,
2014.
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K. Sato,
T. Iwasaki,
H. Kato,
T. Makino,
M. Ogura,
S. Yamasaki,
S. Nakamura,
K. Ichikawa,
A. Sawabe,
M. Hatano.
Analysis of Selective Growth of n-Type Diamond in Lateral pn Junction Diode,
Jpn. J. Appl. Phys.,
Vol. 53,
pp. 05FP01-1~05FP01-4,
2014.
International Conference (Reviewed)
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J. Yaita,
T. Iwasaki,
M. Natal,
S. E. Saddow,
M. Hatano.
Heteroepitaxial Growth of Diamond on Si Substrates via 3C-SiC buffer layer by Antenna Edge Microwave Plasma CVD for Power Electronics Application,
The Third International Education Forum on Environment and Energy Science,
Dec. 2014.
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K.Tahara,
T.Iwasaki,
A.Matsutani,
M.Hatano.
Characteristics of Fluorinated Graphene Field Effect Transistors,
The Third International Education Forum on Environment and Energy Science,
Dec. 2014.
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Takayuki Iwasaki,
Junya Yaita,
Meralys Reyes-Natal,
Stephen E. Saddow,
Mutsuko Hatano.
High Voltage Characteristics and Interface Analysis of Diamond Lateral p-n Junction Devices,
2014 MRS Fall Meeting & Exhibit,
Dec. 2014.
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J. Yaita,
T. Iwasaki,
M. Natal,
S. E. Saddow,
M. Hatano.
Heteroepitaxial Growth of Highly-Oriented Diamond Films on Si(001) Substrates with 3C-SiC(001) Buffer Layers,
2014 MRS Fall Meeting & Exhibit,
Dec. 2014.
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J. Hasegawa,
T. Kodera,
T. Iwasaki,
M. Hatano.
Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS,
The Third International Education Forum on Environment and Energy Science,
Dec. 2014.
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JunTae Song,
T.Iwasaki,
M.Hatano.
Photoelectrochemical Co2 conversion system with 3C-SiC photo-anode and Pt counter electrode,
SSDM2014,
Sept. 2014.
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J. Hasegawa,
M.Noguchi,
M.Furuhashi,
S. Nakata,
T.Iwasaki,
T.Kodera,
T.Nishimura,
M.Hatano.
Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS,
SSDM 2014,
Sept. 2014.
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J.Yaita,
T.Iwasaki,
M.Natal,
S.E.Sadow,
M.Hatano.
Heteroepitaxial growth of diamond films on 3C-SiC (001)/Si substrates by antenna-edge microwave plasma CVD,
SSDM 2014,
Sept. 2014.
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J. Hasegawa,
M. Noguchi,
M. Furuhashi,
S. Nakata,
T. Iwasaki,
T. Kodera,
T. Nishimura,
M. Hatano.
Effect of Gate Oxide Process at SiC-MOS Interface on Threshold Voltage Shift Analyzed by DLTS,
2014 International Conference on Solid State Devices and Materials (SSDM 2014),
Sept. 2014.
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K.Sato,
T.Iwasaki,
M. Shimizu,
H.Kato,
T.Makino,
M.Ogura,
D.Takeuchi,
S.Nakamura,
A.Sawabe,
S.Yamasaki,
M. Hatano.
Fabrication of diamond lateral pn Junctions on (111)substrates,
Hasselt Diamond Workshop 2015,
Feb. 2014.
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T. Suwa,
T. Iwasaki,
K. Sato,
H. Kato,
T. Makino,
M. Ogura,
D. Takeuchi,
S. Yamasaki,
M. Hatano.
Normally-off operation of diamond junction FETs,
Hasselt Diamond Workshop 2015,
Feb. 2014.
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T. Iwasaki,
J. Yaita,
M. Natal,
S. E. Saddow,
M. Hatano.
Heteroepitaxial nucleation of diamond on 3C-SiC(001) thin films by antenna-edge microwave plasma CVD,
Hasselt Diamond Workshop 2014,
Feb. 2014.
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*K. Watanabe,
R. Tsuchiya,
M. Hatano.
High S/N crystallinity measurement and effective defect passivation in silicon nanostructures for third generation photovoltaics,
35th IEEE photovoltaic specialists conference,
2014.
Domestic Conference (Reviewed)
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Kosuke Tahara,
Takayuki Iwasaki,
akihiro matsutani,
Mutsuko Hatano.
フッ化グラフェン中のスピン緩和,
第28回ダイヤモンドシンポジウム,
Nov. 2014.
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kazuki satou,
Takayuki Iwasaki,
清水麻希,
加藤宙光,
牧野俊晴,
小倉政彦,
竹内大輔,
山崎 聡,
中村新一,
澤邊厚仁,
Mutsuko Hatano.
(111)基板上の横型p-n接合ダイオードの作製と評価,
第28回ダイヤモンドシンポジウム,
Nov. 2014.
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Junya Yaita,
Takayuki Iwasaki,
M.Natal,
S.E. Saddow,
Mutsuko Hatano.
先端放電型プラズマCVDを用いた3C-SiC/Si上へのダイヤモンドヘテロエピタキシャル成長,
第28回ダイヤモンドシンポジウム,
Nov. 2014.
International Conference (Not reviewed / Unknown)
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T. Kodera,
M. Hatano.
Deep-level states and defect states in silicon carbide,
2014 Core to core project, Japan workshop,
Nov. 2014.
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T. Iwasaki,
F. Jelezko,
M. Hatano.
High voltage operation of diamond JFETs and formation of single NV centers toward detecting power device properties,
Workshop on Core-to-Core Program,
Nov. 2014.
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M. Hatano.
Diamond devices for power devices and quantum sensing applications,
The QNERC Workshop on Nano Devices and Materials,
Nov. 2014.
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M.Hatano.
Diamond Junction FETs for Next-generation Power Electronics,
Japan-France Joint Diamond Workshop 2014,
Oct. 2014.
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M. Hatano.
Next generation power devices,
The second French-Japanese Workshop “Diamond power devices”,
Oct. 2014.
Domestic Conference (Not reviewed / Unknown)
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Junya Yaita,
Takayuki Iwasaki,
Meralys Natal,
Steven E. Saddow,
Mutsuko Hatano.
先端放電型プラズマCVDを用いた3C-SiC(001)/Si(001)ウェハ上への高配向ダイヤモンド薄膜合成,
第75回ダ応用物理学会秋季学術講演会,,
Sept. 2014.
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Junichi Hasegawa,
Takeru Suto,
Takayuki Iwasaki,
Tetsuo Kodera,
古橋壮之,
野口宗隆,
中田修平,
西村正,
Mutsuko Hatano.
DLTS法による窒化後酸化SiC-MOSFETの界面準位評価,
第75回応用物理学会秋季学術講演会,
Sept. 2014.
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J. T. Song,
S. Akabane,
R. G. Amici,
T. Iwasaki,
M. Hatano.
Photoelectrochemical CO2 reduction on 3C-SiC photo-anode,
第75回ダ応用物理学会秋季学術講演会,
Sept. 2014.
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Shunnosuke Akabane,
Juntae Song,
Renato Goes Amici,
三宅景子,
加藤正史,
Takayuki Iwasaki,
Mutsuko Hatano.
”高安定、高効率な水の光電気分解に向けたp型3C-SiC電極の開発,
第75回応用物理学会秋季学術講演会,
Sept. 2014.
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Jun Tae Song,
Sunnosuke Akabane,
Renato Goes Amici,
Takayuki Iwasaki,
Mutsuko Hatano.
Photoelectrochemical Co2 reduction on 3C-SiC photoanode,
Sept. 2014.
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Junichi Hasegawa,
野口宗隆,
中田修平,
Takeru Suto,
Takayuki Iwasaki,
Tetsuo Kodera,
古橋壮之,
西村正,
Mutsuko Hatano.
DLTS法による窒化後酸化SiC-MOSFETの界面準位評価,
第75回応用物理学会秋季学術講演会,
Sept. 2014.
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kazuki satou,
Takayuki Iwasaki,
清水麻希,
加藤宙光,
牧野俊晴,
小倉政彦,
竹内大輔,
山崎聡,
中村新一,
澤邊厚仁,
Mutsuko Hatano.
(111)基板上のダイヤモンド横型p-n接合の作製,
第75回ダ応用物理学会秋季学術講演会,
Sept. 2014.
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Shunnosuke Akabane,
Juntae Song,
Renato Goes Amici,
三宅景子,
加藤正史,
Takayuki Iwasaki,
Mutsuko Hatano.
高安定・高効率な水の光電気分解に向けたp型3C-SiC電極の開発,
第75回ダ応用物理学会秋季学術講演会,
Sept. 2014.
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Satoko Furuyama,
Takayuki Iwasaki,
Mutsuko Hatano.
ボトムアップ法を用いたダイヤモンドの選択成長,
第61回応用物理学会春季学術講演会,
Mar. 2014.
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Junya Yaita,
Takayuki Iwasaki,
S.E.Saddow,
Mutsuko Hatano.
先端放電型プラズマCVDを用いたb-SiC上へのダイヤモンドヘテロエピタキシャル成長,
第61回応用物理学会春季学術講演会,
Mar. 2014.
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Wataru Naruki,
Kosuke Tahara,
Takayuki Iwasaki,
Satoko Furuyama,
akihiro matsutani,
Mutsuko Hatano.
横型フッ化グラフェン‐グラフェンヘテロ構造の作製,
第61回応用物理学会春季学術講演会,
Mar. 2014.
Patent
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