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松浦賢太朗 2017年 研究業績一覧 (10件 / 63件)
論文
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Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudo,
H. Wakabayashi,
A. Ogura.
Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition,
MRS Advances,
Vol. 2,
No. 29,
2017.
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"Jun’ichi Shimizu",
"Takumi Ohashi",
"Kentaro Matsuura",
"Iriya Muneta",
"Kuniyuki Kakushima",
"Kazuo Tsutsui",
"Hitoshi Wakabayashi".
High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for Three-dimensional ICs,
Japanese Journal of Applied Physics (JJAP),
Vol. 56,
No. 4S,
2017.
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Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
H. Wakabayashi,
A. Ogura.
Band gap-tuned MoS2(1-x)Te2x thin films synthesized by a hybrid Co-sputtering and post-deposition tellurization annealing process,
Journal of Materials Research,
Vol. 32,
No. 16,
2017.
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S. Ishihara,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudo,
H. Wakabayashi,
A. Ogura.
Effects of Reaction Conditions on MoS2 Thin Film Formation Synthesized by Chemical Vapor Deposition using Organic Precursor,
MRS Advances,
Vol. 2,
No. 29,
2017.
国際会議発表 (査読有り)
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M. Toyama,
T. Ohashi,
K. Matsuura,
J. Shimizu,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
TiN/Ti Ohmic Contact for Sputtered-MoS2 Film using Forming-Gas Annealing,
Advanced Metallization Conference 2017: 27th Asian Session,
Oct. 2017.
公式リンク
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N. Hayakawa,
I. Muneta,
T. Ohashi,
K. Matsuura,
J. Shimizu,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Conductance control by tunneling-barrier thickness optimizations in Fe/Al2O3/MoS2 structure,
International Conference on Solid State Devices and Materials,
Sept. 2017.
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S. Hirano,
J. Shimizu,
K. Matsuura,
T. Ohashi,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
Crystallinity improvement using migration-enhancement methods for sputtered-MoS2 films,
2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM),
2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM),
pp. 234-235,
June 2017.
公式リンク
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J. Shimizu,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
N. Ikarashi,
H. Wakabayashi.
Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET,
IEEE Electron Device Technology and Manufacturing Conference (EDTM),
2017 IEEE Electron Device Technology and Manufacturing Conference (EDTM),
pp. 222-223,
June 2017.
公式リンク
国内会議発表 (査読なし・不明)
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外山 真矢人,
大橋 匠,
松浦 賢太朗,
清水 淳一,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性,
第64回応用物理学会春季学術講演会,
Mar. 2017.
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早川直希,
宗田伊理也,
大橋匠,
松浦賢太朗,
清水淳一,
角嶋邦之,
筒井一生,
若林整.
トンネル電極を形成したスパッタ MoS2膜における電流の障壁膜厚依存性,
第64回応用物理学会春季学術講演会,
Mar. 2017.
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