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大橋弘通 2018年 研究業績一覧 (6件 / 24件)
論文
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Akira Nakajima,
Shunsuke Kubota,
Kazuo Tsutsui,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai,
Shin-ichi Nishizawa,
Hiromichi Ohashi.
GaN-based CMOS Inverter with Normally-off P- and N-channel MOSFETs in GaN/AlGaN/GaN Platform,
IET Power Electronics,
Vol. 11,
No. 4,
pp. 689-694,
Apr. 2018.
国際会議発表 (査読有り)
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T. Saraya,
K. Itou,
T. Takakura,
M. Fukui,
S. Suzuki,
K. Takeuchi,
M. Tsukuda,
Y. Numasawa,
K. Satoh,
T. Matsudai,
W. Saito,
K. Kakushima,
T. Hoshii,
K. Furukawa,
M. Watanabe,
N. Shigyo,
K. Tsutsui,
H. Iwai,
A. Ogura,
S. Nishizawa,
I. Omura,
H. Ohashi,
T. Hiramoto.
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss,
International Electron Devices Meeting (IEDM2018),
Dec. 2018.
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Takuya Hoshii,
Kazuyoshi Furukawa,
Kuniyuki Kakushima,
Masahiro Watanabe,
Naoyuki Shigyo,
Takuya Saraya,
Toshihiko Takakura,
Kazuo Itou,
Munetoshi Fukui,
Shinichi Suzuki,
Kiyoshi Takeuchi,
Iriya Muneta,
Hitoshi Wakabayashi,
Sinichi Nishizawa,
Kazuo Tsutsui,
Toshiro Hiramoto,
Hiromichi Ohashi,
Hiroshi Iwai.
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately,
44th European Solid-State Circuits Conference (ESSDERC2018),
Sept. 2018.
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K. Kakushima,
T. Hoshii,
M. Watanabe,
N. Shigyo,
K. Furukawa,
T. Saraya,
T. Takakura,
K. Itou,
M. Fukui,
S. Suzuki,
K. Takeuchi,
I. Muneta,
H. Wakabayashi,
Y. Numasawa,
A. Ogura,
S. Nishizawa,
K. Tsutsui,
T. Hiramoto,
H. Ohashi,
H. Iwai.
New methodology for evaluating minority carrier lifetime for process assessment,
Symp. On VLSI Technology (VLSI2018),
June 2018.
国際会議発表 (査読なし・不明)
国内会議発表 (査読なし・不明)
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