|
大見俊一郎 2019年 研究業績一覧 (4件 / 298件)
国際会議発表 (査読有り)
-
Joel Molina-Reyes,
Takuya Hoshii,
Shun-Ichiro Ohmi,
Hiroshi Funakubo,
Atsushi Hori,
Ichiro Fujiwara,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing,
Solid State Devices and Materials (SSDM2019),
Sept. 2019.
国際会議発表 (査読なし・不明)
-
Joel Molina-Reyes,
Haruki Iwatsuka,
Takuya Hoshii,
Shun-Ichiro Ohmi,
Hiroshi Funakubo,
Atsushi Hori,
Ichiro Fujiwara,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing,
VLSI 2019 (2019 Symposia on VLSI Technology and Circuits),
June 2019.
-
J. Molina,
H. Iwatsuka,
T. Hoshii,
S. Ohmi,
H. Funakubo,
A. Hori,
I. Fujiwara,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Ferroelectric Properties of Si doped HfO2 Thin Films with NiSi2 as Bottom Electrode,
235th ECS Meeting,
May 2019.
特許など
-
大見俊一郎.
トランジスタおよび不揮発性メモリ.
特許.
登録.
国立大学法人東京工業大学.
2019/06/28.
特願2019-122028.
2021/01/28.
特開2021-009893.
特許第7357901号.
2023/09/29
2023.
[ BibTeX 形式で保存 ]
[ 論文・著書をCSV形式で保存
]
[ 特許をCSV形式で保存
]
|