Journal Paper

• Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout, Journal of the Electron Devices Society (J-EDS), vol. 8, pp. 1244-1250, Nov. 2018.

International Conference (Reviewed)

• Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout, The 2nd Electron Devices Technology and Manufacturing Conference (EDTM2018), Mar. 2018.

Domestic Conference (Not reviewed / Unknown)

• Eisuke Anju, Iriya Muneta, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Hitoshi Wakabayashi. ソース/ドレイン逆凹型コンタクト構造による横型積層シリコンナノワイヤFETにおける自己発熱効果の緩和, 65th JSAP Spring meeting, Mar. 2018.
• Eisuke Anju, Takumi Ohashi, Iriya Muneta, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Hitoshi Wakabayashi. Accumulation-Mode積層型ナノワイヤCMOSデバイスのチャネル不純物濃度およびゲート電極仕事関数の依存性, 77th JSAP Autumnmeeting, Sept. 2016.

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