論文

• Jinhan Song, Atsuhiro Ohta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer, Japanese Journal of Applied Physics (JJAP) (Rapid Communication), Vol. 60, Page 30901, Feb. 2021.

国際会議発表 (査読有り)

• K. Sasaki, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, I. Mizushima, T. Yoda, K. Kakushima. Minority Carrier Lifetime Measurement for SiC Epitaxial Layer, The 5th Meeting on Advanced Power Semiconductors, Nov. 2018.
• K. Kakushima, K. Tachi, M. Adachi, K. Okamoto, S. Sato, J. Song, T. Kawanago, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai. Advantage of La2O3 Gate Dielectric Over HfO2 for Direct Contact and Mobility Improvment, the 38th European Solid-State Device Research Conference (ESSDERC2008), Sept. 2008.

国際会議発表 (査読なし・不明)

• "Atsuhiro Ohta, J. Song, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima". Electrical Characteristics of Atomic Layer Deposited Y-silicate Dielectrics, Electrochemical Society (ECS) PRIME 2020, Oct. 2020.

国内会議発表 (査読なし・不明)

• 太田 惇丈, 宋 禛漢, 星井 拓也, 若林 整, 筒井 一生, 角嶋 邦之. 原子層堆積法を用いたイットリウムシリケート薄膜の形成, 第80回応用物理学会秋季学術講演会, Sept. 2019.

学位論文

• A Study on Rare Earth Gate Dielectrics for SiC MOSFET,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2021/03/26,   
• A Study on Rare Earth Gate Dielectrics for SiC MOSFET,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2021/03/26,   
• A Study on Rare Earth Gate Dielectrics for SiC MOSFET,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2021/03/26,   

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]