論文

• T. Shirasawa, W. Voegeli, E. Arakawa, R. Ushioda, K. Nakatsuji, H. Hirayama. Structural transition at the subsurface of few-layer Bi(110) film during the growth, Physical Review Materials.., Volume 7, 033404, Mar. 2023.
• M. Shimura, T. Shirasawa, R. Ushioda, K. Nakatsuji, H. Hirayama. Growth kinetics of a perfectly flat Bi(110) film during low-temperature deposition and subsequent annealing, Surface Science, Volume 728, 122210, Feb. 2023.
• Ogino, T., Insung Seo, Tajiri, H., Nakatake, M., Takakura, S.-I., Sato, Y., Hasegawa, Y., Yoshihiro Gohda, Kan Nakatsuji, HIROYUKI HIRAYAMA. Superconductivity in a two monolayer thick indium film on Si(111) 3 × 3 -B, Physical Review B, Vol. 106, No. 4, July 2022.  公式リンク  
  
• R. Ushioda, M. Shimura, K. Nakatsuji, H. Hirayama. Growth-rate dependence of the structural transition of bismuth islands on Si(111) substrates, Physical Review Materials, Vol. 6, p. 043403(10pages), Apr. 2022.
• Tsuyoshi Yamagami, Taiga Kasai, Kan Nakatsuji, Hiroyuki Hirayama. Bismuth Intercalation at the Graphene/Cu(111) Interface with [2012] Long-Range Ordering, Journal of the Physical Society of Japan, Vol. 91, No. 4, p. 043601(5pages), Mar. 2022.
• HIROYUKI HIRAYAMA. Nucleation and growth of ultrathin Bi films, Adv. Phys. X, Taylor & Francis, Vol. 6, p. 1845975 (20 pages), Nov. 2020.
• K. Sugawara, I. Seo, S. Yamazaki, K. Nakatsuji, Y. Gohda, H. Hirayama. Effective quantum-well width of confined electrons in ultrathin Ag(111) films on Si(111)7x7 substrates, Surface Science, Vol. 704, p. 121745 (6 pages), Oct. 2020.
• T. Ogino, V. M. Kuzumo, S. Yamazaki, K. Nakatsuji, H. Hirayama. Variation of the metal-insulator transition temperature of quasi-one-dimensional indium chains upon carrier doping from Si(111) substrates, J. Phys.: Condens. Matter, Vol. 32, p. 415001 (8pp), July 2020.
• Kentaro Nagase, Ryota Ushioda, Kan Nakatsuji, Tetsuroh Shirasawa, Hiroyuki Hirayama. Growth of extremely flat Bi(110) films on a Si(111)√3 × √3-B substrate, Applied Physics Express, Vol. 13, p. 085506 (4 pages), July 2020.
• 福元博之, 吉池雄作, 田尻寛男, 山崎詩郎, 中辻寛, 平山博之. Si(111)√3x√3-B基板上のAg(111)超薄膜のSTM像に現われる埋もれた界面構造, 表面と真空, 日本表面真空学会, vol. 61, pp. 657-662, Oct. 2018.
• Y. Yoshiike, H. Tajiri, S. Yamazaki, K. Nakatsuji, H. Hirayama. X-ray structural analysis of epitaxially grown Ag film/Si(111)Root3xRoot3-B substrate interface, Jpn. J. Appl. Phys., vol. 57, pp. 075701(1)-(8), June 2018.
• Kentaro Nagase, Ikuya Kokubo, Shiro Yamazaki, Kan Nakatsuji, Hiroyuki Hirayama. Structure and growth of Bi(110) islands on Si(111)Root3xRoot3-B substrates, Physical Review B, vol. 97, p. 195418 (8 pages), May 2018.
• Yuka Takagi, Shiro Yamazaki, Kan Nakatsuji, Hiroyuki Hirayama. Size, Shape, and Number Density of Deposits in the Graphene Solution Liquid Droplet Method, Materials Today Communications, Vol. 13(C), pp. 65-71, Sept. 2017.
• Kishu Sugawara, Kentaro Nagase, Shiro Yamazaki, Kan Nakatsuji, Hiroyuki Hirayama. Interaction of Stark-shifted image potential states with quantum well states in ultrathin Ag(111) islands on Si(111)Root3xRoot3-B substrates, Physical Review B, vol. 96, p. 075444, Aug. 2017.
• 森田 清三, 荻野 俊郎, 菅野 卓雄, 平山博之, 塚田 捷, 尾嶋 正治, 吉原 一紘, 大島 忠平, 宮崎 栄三, 重川 秀実, 高柳 邦夫, 福田 安生, 馬場 宣良, 一宮 彪彦, 庭野 道夫, 岩澤 康裕, 吉村 雅満, 二瓶 好正, 坂田 亮, 大門 寛. 「表面科学とともに」, 表面科学, 公益社団法人 日本表面科学会, Vol. 38, No. 12, pp. 638-649, 2017.
• J. Sone, T. Yamagami, K. Nakatsuji, H. Hirayama. Si growth at graphene surfaces on 6H-SiC(0001) substrates, Jpn. J. Appl. Phys., Vol. 55, p. 035502 (5pages), Apr. 2016.
• I. Kokubo, Y. Yoshiike, K. Nakatsuji, H. Hirayama. Ultra-thin Bi(110) films on Si(111)√3x√3-B substrates, Physical Review B, Vol. 91, p. 075429 (7pages), Sept. 2015.
• Kokubo, I., Yoshiike, Y., Kan Nakatsuji, HIROYUKI HIRAYAMA. Ultrathin Bi(110) films on Si(111) 3 × 3 - B substrates, Physical Review B - Condensed Matter and Materials Physics, Vol. 91, No. 7, 2015.
• T. Yamagami, J. Sone, K. Nakatsuji, H. Hirayama. Surfactant role of Ag atoms in the growth of Si layers on Si(111)√3x√3-Ag substrates, Applied Physics Letters, Vol. 105, pp. 151603(1)-(4), Sept. 2014.
• J. Sone, T. Yamagami, Y. Aoki, K. Nakatsuji, H. Hirayama. Epitaxial growth of silicene on ultra-thin Ag(111) films, New Journal of Physics, Vol. 16, p. 095004 (15 pages), Aug. 2014.
• Toda, Yoshitake, HIROYUKI HIRAYAMA, Kuganathan, Navaratnarajah, Torrisi, Antonio, Sushko, Peter, Hosono, Hideo Hosono. Activation and splitting of carbon dioxide on the surface of an inorganic electride, 247th National Spring Meeting of the American-Chemical-Society (ACS), ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, AMER CHEMICAL SOC, Vol. 247, Mar. 2014.
• Y. Yoshiike, H. Fukumoto, I. Kokubo, Y. Aoki, K. Nakatsuji, H. Hirayama. Regular ripples at the surfaces of heteroepitaxialy grown Ag(111) ultra-thin films on Si(111)√3x√3-B substrates, Applied Physics Letters, Vol. 104, pp. 191605(1)-(4), Feb. 2014.
• Fukumoto, M.Miyazaki, Y. Aoki, K.Nakatsuji, H. Hirayama. Initial stage of Ag growth on Bi/Ag(111)√3x√3 surfaces, Surface Science, Vol. 611, pp. 49-53, Aug. 2013.
• Yoshitake Toda, Hiroyuki Hirayama, Navaratnarajah Kuganathan, Antonio Torrisi, Peter V. Sushko, Hideo Hosono. Activation and splitting of carbon dioxide on the surface of an inorganic electride material, Nat. Commun., Vol. 4, No. 2378, pp. 1-8, 2013.
• Y. Okonogi, Y. Aoki, H. Hirayama. Graphitization of boron predeposited 6H-SiC(0001) surface, Applied Surface Science, Vol. 261, pp. 868-872, Aug. 2012.
• 平山博之, 中辻寛. 【最新表面科学講座】固体表面の電子状態, 色材協会誌, Vol. 85, pp. 25-32, June 2012.
• H. Fukumoto, Y. Aoki, H. Hirayama. Decay of Shockley surface state by randomly adsorbed Bi atoms at Ag(111) surfaces, Physcal Review B, Vol. 86, pp. 165311(1)-(5), Apr. 2012.
• H. Hirayama, Y. Aoki, C. Kato. Quantum Interference of Rashba-type Spin-split Surface State Electrons, Physical Review Letters, Vol. 107, pp. 0277204(1)-(4), July 2011.
• Y. Aoki, Y. Aoki, H. Hirayam. Hydrogen chemisorption on Si(111)√3×√3R30?-B passivated surface studied by thermal desorption and scanning tunneling microscopy, Surface Science, Vol. 605, pp. 1394-1398, Mar. 2011.
• Y. Toda, Y. Kubota, M. Hirano, H. Hirayama, H.Hosono. [Ca24Al28O64]4+(e-)4 Electride Surface: Preparation and Atomic-Scale Charactreization, ACS Nano, Vol. 5, pp. 1907-1914, 2011.
• Chiaki Kato, yuki aoki, HIROYUKI HIRAYAMA. Acanning tunneling microscopy of Bi-induced Ag(111) surface structures, Phyical Review B, The American Physical Society, vol. 82, pp. 165407 (1)-(7), Oct. 2010.
• Keiichi Sawa, yuki aoki, HIROYUKI HIRAYAMA. Dislocation-induced Local Modulation of the Surface States of Ag(111) Thin Films, Physical Review Letters, vol. 104, pp. 016806(1)-(4), Jan. 2010.
• yuki aoki, unknown unknown, Sugimoto Tadashi, HIROYUKI HIRAYAMA. H adsorption at Ag/Si interfaces in epitaxially grown Ag(111) films on Si(111)7x7 Substrates, Surface Science, Elsevier Science Publisher, Vol. 604, pp. 420-423, Jan. 2010.
• yuki aoki, HIROYUKI HIRAYAMA. Hydrogen desorption from 6H-SiC(0001) surfaces during Graphitization, Applied Physics Letters, vol. 95, pp. 094103(1)-(3), Aug. 2009.
• Keiichi Sawa, yuki aoki, HIROYUKI HIRAYAMA. Thickness dependence of Shockley-type surface states of Ag(111) ultrathin films on Si(111)7x7 substrates, Physical Review B, The American Physical Society, Vol. 80, pp. 035428(1)-(5), July 2009.
• HIROYUKI HIRAYAMA. Growth of atomically flat ultra-thin Ag films on Si surfaces, Surface Science, vol. 603, pp. 1492-1497, May 2009.
• Satoshi Minamoto, HIROYUKI HIRAYAMA. Scattering Potential Evaluation with S+P+D Wave Expansion of a Vacancy Complex on a Si(111)√3x√3-Ag Surface, Materials Science & Engineering B, vol. 161, pp. 16-19, Apr. 2009.
• Tsuka Sekiguchi, HIROYUKI HIRAYAMA. An STM study of Ge Heteroepitaxial Growth on Si(111)√3x√3-B Surfaces, Surface Science, Elsevier, vol. 602, pp. 3279-3283, Nov. 2008.
• masaru miyazaki, HIROYUKI HIRAYAMA. Thickness- and Deposition Temperature-dependent Morphological Change in Electric Growth of Ultra-thin Ag Films on Si(111) Substrates, Surface Science, Vol. 602, pp. 276-282, 2008.
• Satoshi Minamoto, Takeshi Ishiduka, HIROYUKI HIRAYAMA. Electron Confinement in a STM-lithographed Nanoscale Domain on an Si(111)√3x√3-Ag Surface, Surface Science, Vol. 602, pp. 470-474, 2008.
• Satoshi Minamoto, Yurika Ogawa, Yoshinori Sano, HIROYUKI HIRAYAMA. Scattering of the S1-surface state electron by an isolated adatom, Physica E, Vol. 40, pp. 324-327, 2007.
• Y.Ohshima, K.Mouri, H.Hirayama, K.Takayanagi. Qunatized electrical conductance of gold herical multishell nanowires, J.Phys.Soc.Jpn., Vol. 75, pp. 053705(1)-(4), 2006.
• H.Hirayama, M.Watai. Two-PhotonResonance in Optical Second Harmonic Generation From Quantum Well States in Ultra-thin Ag Films grown on Si(111) Surfaces, Surface Science, Vol. 600, pp. 3825-3829, 2006.
• T.Furuhashi, Y.Ohshima, H.Hirayama. Barrier Height Imaging of Si(111)3x1-Ag Reconstructed Surfaces, Applied Surface Science, Vol. 253, pp. 651-654, 2006.
• M.Watai, H.Hirayama. Resonant Optical Second Harmonic Generation From Quantum Well States in Ag Films on Si(111)7x7 Surfaces, Physical Review B, Vol. 72, pp. 085435(1)-(5), 2005.
• H.Hirayama. Confinement of one-dimensional electrons in dimer row segments at Ge/Si(001) surfaces, Science and Technology of Advanced Materials, Vol. 5, pp. 517-520, 2004.
• Y.Ohshima, K.Mouri, H.Hirayama, K.Takayanagi. Development of a miniature STM holder for study of electronic conductance of Metal nanowires in UHV-TEM, Surface Science, Vol. 531, pp. 209-216, 2003.
• H.Hirayama, A.Yamasaki, T.Kawata. Change of optical second harmonic generation intensity during Ag deposition on Si(111)7x7 and Si(111)R3xR3-Ag surfaces, Surface Science, Vol. 532-535, pp. 922-927, 2003.
• H.Hirayama, H.Mizuno, R.Yoshida. Dimers at Ge/Si(001) surfaces: Ge coverage dependent quenching, reactivation of flip-flop motion, and interaction with dimer vacancy lines, Physical Review B, Vol. 66, pp. 165428, 2002.
• H.Hirayama, T.Komizo, T.Kawata, K.Takayanagi. Changes of phase and intensity of optical SHG with Ag deposition, Applied Surface Science, Vol. 190, pp. 108, 2002.
• Y.Ohshima, H.Koizumi, K.Mouri, H.Hirayama, K.Takayanagi, Y.Kondo. Evidence of a single-wall platinum nanotube, Physical Review B, Vol. 66, pp. 121401(1-4), 2002.
• Y.Ohshima, H.Nakade, S.Shigeki, H.Hirayama.K.Takayanagi. Commensurate and incommensurate striped structure of Ag film growth on Si(111) R3xR3 surface at room temperature, Surface Science, Vol. 498, pp. 307-313, 2002.
• H.Hirayama, T.Yamaguchi, H.Ikezawa, K.Tanaka. Influence of 1x1 defects on Schottky barrier height at the Ag/Si(111) interface, Physical Review B, Vol. 66, pp. 073301, 2002.
• Y.Ohshima, T.Nangou, H.Hirayama, K.Takayanagi. Face centered cubic indium nano-particles studied by UHV-TEM, Surface Science, Vol. 476, pp. 107-114, 2001.
• Y.Ohshima, H.Nakade, S.Shigeki, H.Hirayama, K.Takayanagi. UHV-TEM/TED observation of Ag islands grown on Si(111)R3xR3-Ag surface, Surface Science, Vol. 493, pp. 366-372, 2001.
• H.Hirayama, R.Horie, K.Takayanagi. Nucleation of nanodots at the Si(11)3x1-Ag surfaces, Surface Science, Vol. 482-485, pp. 1277-1282, 2001.
• H.Hirayama, Y.Kawamoto, Y.Ohshima, K.Takayanagi. Nano spot welding of carbon nanotubes, Applied Physics Letters, Vol. 79, pp. 1169-1171, 2001.
• H.Hirayama, T.Kawata, K.Takayanagi. Oscillation of the optical second hamonic generation intensity during Ag thin film growth on an Si(111)7x7 surface, Physical Review B, Vol. 64, pp. 195415(1)-(5), 2001.
• H.Hirayama, T.Komizo, T.Kawata, K.Takayanagi. Optical Second Harmonic Generation Spectrum of Ag/Si(111) Reconstructed Surfaces, Physical Review, Vol. B63, pp. 155413-(1-6), 2001.
• Y.Naitoh, K.Takayanagi, Y.Ohshima, H.Hirayama. Simultaneous STM and UHV electron microscope observation of silicon Nanowires extracted from Si(111) surface, Journal of Electron Microscope, Vol. 49, pp. 211-216, 2000.
• H.Hirayama, N.Sugihara, K.Takayanagi. Chain-left isomer of the phi-bonded chain reconstruction at the Ge(111)2x1 surface, Physical Review B, Vol. 62, No. 11, pp. 6900-6903, 2000.
• HIROYUKI HIRAYAMA. Atomic structure of cluster-ordered array on the Si(001) surface induced by aluminum, Surface Science, Vol. 465, pp. 81-89, 2000.
• 平山博之. 低エネルギーイオン照射による表面欠陥の生成と消滅, まてりあ, Vol. 39, pp. 83-83, 2000.
• H.Ikeda, Y.Ohshima, H.Hirayama, K.Takayanagi. Reconstruction of the Si(113) surface studied by TED, Surface Science, Vol. 443-445, pp. 632-636, 1999.
• Y.Naitoh, K.Takayanagi, H.Hirayama, Y.Ohshima. Simultaneous observation of scanning tunneling microscopy and reflection electron microscopy, Surface Science, Vol. 443-445, pp. 627-631, 1999.
• J.Yamashita, H.Hirayama.Y.Ohshima, K.Takayanagi. Growth of a single-wall carbon nanotube in the gap of scanning tunneling microscope, Applied Physics Letters, Vol. 74, pp. 2450-2452, 1999.
• K.Nakata, H.Hirayama.K.Takayanagi. Initial stage of C60 thin film ｇrowth on the YB66(001) surfaces , Japan Journal of Applied Physics, Vol. 38, pp. 4160-4163, 1999.
• H.Hirayama, H.Okamoto, K.Takayanagi. A growth of high-density, small Ag islands on the Si(111)7x7 surfaces with adatom defects, Physical Review B, Vol. 60, pp. 14260-14264, 1999.
• HIROYUKI HIRAYAMA. A Role of 2×1 Domain Boundaries on the Transition from 2×1 to c(2×8) at Ge(111) Surfaces, Physical Review, Vol. B57, pp. 15567, 1998.
• 平山, 永長, 高柳. Ge{111}ヘキカイ表面上2x1ーc(2x8)構造変化のSTM観察, 応用物理学会・薄膜表面分科会ニュースレター, Vol. 104, pp. 12-18, 1998.
• HIROYUKI HIRAYAMA. Formation And Healing of Defects at the Si(111) 7×7 Surfaces under Low Energy Ion Bombardment, Physical Review, Vol. B57, pp. 7292, 1998.
• M.Ohmori, H.Hirayama, K.Takayanagi. Scanning tunneling microscope study on the {111} cross sectional surface of Si/Ge layered materials, Physical Review B, Vol. 59, pp. 5612-5616, 1998.
• HIROYUKI HIRAYAMA. Recent Development and Application of the XSTM, Surface Review Letters, Vol. 5, pp. 797, 1998.
• M.Koike, Y.Einaga, H.Hirayama, K.Takayanagi. Scanning Tunneling Microscope Study of the C(2×8) Ordtring in the 1×1 Phase on the Quenched Si(111) Surface, Physical Review, Vol. B55, pp. 15444, 1997.
• Y.Ohshima, H.Hirayama, K.Takayanagi. Structual transition of Bismuth nano-particles observed by Ultra-High Vacuum TEM, Z.Phys., Vol. D40, pp. 534-538, 1997.
• HIROYUKI HIRAYAMA. Cross Sectional Scanning Tunneling Microscope Study of Boron Implanted Si Wafer, Physical Review, Vol. B56, pp. 1948, 1997.
• HIROYUKI HIRAYAMA. Hyperpolarizabilities of Si clusters : model calculations to interprete second-harmonic generation from SiO2/Si(111) interface, Chemical Physics Letters, Vol. 272, pp. 199, 1997.
• HIROYUKI HIRAYAMA. Structual Anomaly of Fine Bismuth Particles observed Ultra-vacuum TEM, Z. Physik, Vol. D27, pp. 534, 1997.
• 平山博之. 光第二高調波発生による界面評価, 電気学会技術報告書, No. 583, pp. 28-32, 1996.
• HIROYUKI HIRAYAMA. Analysis of Oxide-Nitride-Oxide/Si(III) Interfaces by Optical Second Harmonic Generation, Journal of Applied Physics, Vol. 79, pp. 4146-4149, 1996.
• H.Hirayama, F.Ito, K.Watanabe. Hydrogen annealing effect on SHG from SiO2/Si(111) interfaces, Journal of Vacuum Science & Technology, Vol. A13, pp. 750-752, 1995.
• H.Hirayama, K.Watanabe. Annealing Effect on Native Oxide/Si(111) Interfaces studied by Second Harmonic Generation, Physical Review B, Vol. 51, pp. 14717-14720, 1995.
• HIROYUKI HIRAYAMA. Oxide-Nitride-Oxide/Si(111) interfaces analyzed by optical second harmonic generation, Applied Physics Letters, Vol. 66, pp. 2232-2234, 1995.
• HIROYUKI HIRAYAMA. Handbook of Crystal Growth MBE with Gaseous Sources, Elsevier Science Publisher (Amsterdam), Vol. 3, No. 8, pp. 182-223, 1995.
• H.Hirayama, K.Watanabe. Doping dependence of second harmonic generation from native oxide/Si(111) interfaces, Applied Surface Science, Vol. 100/101, pp. 460-464, 1995.
• HIROYUKI HIRAYAMA. Oxide-Nitride-Oxide/Si(III) Interface Analyzed by Optical Second Harmonic Generation, Procedings of the 26th IEEE Semiconductor Interface Specialists Conference, pp. 3-5, 1995.
• HIROYUKI HIRAYAMA. A Study of Si(111) surface Oxidation by Temperature Programmed Desorption, Surface Science, Vol. 317, pp. L1125-1228, 1994.
• HIROYUKI HIRAYAMA. Second Harmonic Generation from Si oxide/Si(111) Interfaces, Proc. of the 25th IEEE Semiconductor Interface Specialists Conference, pp. 9-2, 1994.
• HIROYUKI HIRAYAMA. Second Harmonic Generation From SiO2/Si(111) Interface, Physical Review B, Vol. 50, pp. 11208-11211, 1994.
• HIROYUKI HIRAYAMA. Factors Determining the Composition of Strained GeSi Layers Grown with Disilane and Germane, Applied Physics Letters, Vol. 65, pp. 2579-2582, 1994.
• HIROYUKI HIRAYAMA. Study of {311} Facets of Selectively Grown Epitaxial Si Layers on SiO2 Patterned Si(100) Surface, Physical Review B, Vol. 48, pp. 17331-17337, 1993.
• HIROYUKI HIRAYAMA. Adsorbed structure and angular dependence of desorption dynamics : O2 photodesorbed from Pd(111), Physical Review Letters, Vol. 70, pp. 1147-1150, 1993.
• HIROYUKI HIRAYAMA. Low energy H3+ scattering from 4 off Si(100) surfaces, Proc. of the 40th Sympo. , of American Vacuum Society, pp. 159, 1993.
• HIROYUKI HIRAYAMA. Dissociative Scattering of H3+ Molecular Ions From the Si(100) Surface, Physical Review B, Vol. 48, pp. 8095-8101, 1993.
• HIROYUKI HIRAYAMA. Low energy H3+ ion scattering from Si(100) surface, Surface Science, Vol. 287, No. 288, 1993.
• HIROYUKI HIRAYAMA. The influence of lateral interactions on the angular distribution in photodesorption, Surface Science, Vol. 287, No. 288, 1993.
• HIROYUKI HIRAYAMA. Photodissociation and photodesorption of O2 absorbed on Pd(111), Surface Science, Vol. 269, No. 270, 1992.
• HIROYUKI HIRAYAMA. Gas Source Silicon Molecular Beam Epitaxy, Proc. of the 3rd China-Japan Sympo. , on Thin Films, pp. 25-30, 1992.
• HIROYUKI HIRAYAMA. Intensity oscillation in reflection high-energy electron diffraction during disilane gas source molecular beam epitaxy, Applied Physics Letters, Vol. 60, pp. 1723-1725, 1992.
• HIROYUKI HIRAYAMA. B doping using B2H6 in gas source Si molecular beam epitaxy, Applied Physics Letters, Vol. 58, pp. 1991-1993, 1991.
• HIROYUKI HIRAYAMA. Gas Source Silicon Molecular Beam Epitaxy, Material Research Society Sympo. , Proc., Vol. 220, pp. 545-556, 1991.
• HIROYUKI HIRAYAMA. B doping effect on gas source Si-MBE growth : a comparison of B2H6 gas doping and HBO2 Knudsen cell doping, Journal of Crystal Growth, Vol. 111, pp. 856-859, 1991.
• HIROYUKI HIRAYAMA. Silicon etching with oxygen molecular beam assisted by predeposited germanium, Applied Physics Letters, Vol. 56, pp. 635-637, 1990.
• HIROYUKI HIRAYAMA. Gas Source Si-MBE, Material Research Society Sympo. , Proc., Vol. 198, pp. 539-546, 1990.
• HIROYUKI HIRAYAMA. Photophorus Gas Doping in Gas Source Silicon-MBE, Thin Solid Films, Vol. 184, pp. 125-130, 1990.
• HIROYUKI HIRAYAMA. Gas Source Si-MBE, Journal of Crystal Growth, Vol. 105, pp. 46-51, 1990.
• HIROYUKI HIRAYAMA. Bipolar Transistor Fabrication Using Selective Epitaxial Growth of P - and B-doped Layers in Gas Source Si Molecular Beam Epitaxy, IEEE Electron Device Letters, Vol. 11, pp. 18-20, 1990.
• HIROYUKI HIRAYAMA. Etching characteristics of Si1-xGex alloy in ammoniac wet cleaning, Applied Physics Letters, Vol. 57, pp. 2202-2204, 1990.
• HIROYUKI HIRAYAMA. Heterojunction bipolar transistor fabrication using Si1-xGex selective epitaxial growth by gas source silicon molecular beam epitaxy, Applied Physics Letters, Vol. 56, pp. 2645-2647, 1990.
• HIROYUKI HIRAYAMA. B doping effect on reflection high-energy electron diffraction intensity oscillation during gas source silicon molecular beam epitaxial growth, Applied Physics Letters, Vol. 57, pp. 780-782, 1990.
• HIROYUKI HIRAYAMA. Structure of Root3xRoot3 R30-B at the Si interface studied by grazing incidence x-ray diffraction, Applied Physics Letters, Vol. 56, pp. 1225-1227, 1990.
• HIROYUKI HIRAYAMA. Selective heteropitaxial growth of Si1-xGex using gas source molecular beam epitaxy, Applied Physics Letters, Vol. 56, pp. 1107-1109, 1990.
• HIROYUKI HIRAYAMA. Disilane Gas Source Si-MBE, Journal of Crystal Growth, Vol. 95, pp. 476-479, 1989.
• HIROYUKI HIRAYAMA. Si/SiO2/Si hole-barrier fabrication for bipolar transistors using molecular beam deposition, Thin Solid Films, Vol. 184, pp. 229-235, 1989.
• HIROYUKI HIRAYAMA. Device Fabrication and Selective Epitaxial Growth by Si-MBE, NEC Research and Development, Vol. 95, pp. 1-5, 1989.
• 平山博之. Si-MBE技術を用いたデバイス試作と選択成長, 電子情報通信学会論文誌C-II, Vol. J72-C-II, pp. 585-588, 1989.
• HIROYUKI HIRAYAMA. Si(111) surface cleaning using atomic hydrogen and SiH2 studied using reflection high-energy electron diffraction, Applied Physics Letters, Vol. 66, pp. 629-633, 1989.
• HIROYUKI HIRAYAMA. Interface atomic structure of Si/SiO2/Si formed by molecular beam deposition, Applied Physics Letters, Vol. 55, pp. 2500-2502, 1989.
• HIROYUKI HIRAYAMA. High doping of phosphorus in Si using gas source molecular beam epitaxy, Applied Physics Letters, Vol. 55, pp. 131-133, 1989.
• HIROYUKI HIRAYAMA. Reflection high-energy electron diffraction and X-ray photoelectron spectroscopic study on (NH4)2Sx-treated GaAs(100) surfaces, Applied Physics Letters, Vol. 54, pp. 2565-2567, 1989.
• HIROYUKI HIRAYAMA. Hydrogen passivation effect in Si molecular beam epitaxy, Applied Physics Letters, Vol. 54, pp. 1561-1563, 1989.
• HIROYUKI HIRAYAMA. Si particle density reduction in Si molecular beam epitaxy using a deflection electrode, Applied Physics Letters, Vol. 54, pp. 629-631, 1989.
• HIROYUKI HIRAYAMA. Triehylgallium adsorption on Si(100) and Si(111) surfaces, Applied Physics Letters, Vol. 54, pp. 126-128, 1989.
• HIROYUKI HIRAYAMA. Reflection high energy electron diffraction and Auger electron spectroscopic study on B/Si(111) Surfaces, Surface Science, Vol. 193, pp. L47-52, 1988.
• HIROYUKI HIRAYAMA. Si/Ge0.3Si0.7/Si heterojunction bipolar transistor made with Si molecular beam epitaxy, Applied Physics Letters, Vol. 52, pp. 895-897, 1988.
• HIROYUKI HIRAYAMA. Stress reduction and doping efficiency in B- and Ge-doped silicon molecular beam epitaxy films, Applied Physics Letters, Vol. 52, pp. 1335-1337, 1988.
• HIROYUKI HIRAYAMA. Surface segregation at boron planar doping in silicon molecular beam epitaxy, Japan Journal of Applied Physics, Vol. 27, pp. L954-956, 1988.
• HIROYUKI HIRAYAMA. Selective growth condition in disilane gas source molecular beam epitaxy, Applied Physics Letters, Vol. 52, pp. 2242-2243, 1988.
• HIROYUKI HIRAYAMA. Gas Source Silicon Molecular Beam Epitaxy Using Disilane, Applied Physics Letters, Vol. 52, pp. 1484-1486, 1988.
• HIROYUKI HIRAYAMA. Boron heavy doping of Si molecular beam epitaxy using HBO2, Applied Physics, Vol. 50, pp. 1234-1236, 1987.
• HIROYUKI HIRAYAMA. Gas Source Silicon Molecular Beam Epitaxy Using Silane, Applied Physics Letters, Vol. 51, pp. 2213-2215, 1987.
• H.Hirayama, S.Baba, A.Kinbara. Electron energy loss spectra of In/Si(111) superstructures, Applied Surface Science, Vol. 33/34, pp. 193-198, 1986.
• HIROYUKI HIRAYAMA. The Work Function of In/Si(111) Superstructures, Journal of Vacuum Science & Technology, Vol. A4, pp. 1416, 1986.
• HIROYUKI HIRAYAMA. Electron Energy Loss Spectra of In/Si(111) Superstructures, Japan Journal of Applied Physics, Vol. 25, pp. 452-454, 1986.
• HIROYUKI HIRAYAMA. Adatoms of Indium on Si(111) Surfaces : Application of Reflection High Energy Electron Diffraction to Desorption Experiments, Thin Solid Films, Vol. 90, pp. 57-61, 1982.

著書

• 平山博之. ビスマス超薄膜の成長・構造・電子状態, ポストグラフェン材料の創製と用途開発最前線 ポストグラフェン材料の創製と用途開発最前線, エヌ･ティー・エス出版, Feb. 2020.
• 平山 博之. 「現代表面科学シリーズ」第5巻3.1節 半導体、日本表面科学会編 共立出版, 「現代表面科学シリーズ」半導体、日本表面科学会編, 共立出版, Sept. 2011.
• Takaaki Tsurumi, Hiroyuki Hirayama, Martin Vacha, Tomoyasu Taniyama. Nanoscale Physics for Materials Science, CRC Press (Taylor & Francis), Nov. 2009.
• H.Hirayama. Nano-Materials Research Toward Applications (eds. H.Hosono & Y.Mishima) Chap.7 "Size Control of Nano-structures by Quantum Confinement", Elsevier Science Publisher, pp. 265-296, 2006.
• 平山博之. 図説・薄膜技術, 培風館, 培風館, 1998.
• H.Hirayama, H.Asahi. Handbook of Crystal Growth (ed.D.J.T.Hurle) Vol.3,Chap.8 MBE with Gaseous Sources, Elsevier Science Publisher, Vol. 3, pp. 182-223, 1995.

国際会議発表 (査読有り)

• Insung Seo, Kan Nakatsuji, Hiroyuki Hirayama, Yoshihiro Gohda. Electronic structure and interactions of In thin film on Si(111)√3×√3-B, 14th International Symposium on Atomic Level Characterizations for New Materials and Devices '22, Oct. 2022.
• Insung Seo, Kan Nakatsuji, Hiroyuki Hirayama, Yoshihiro Gohda. Interfacial Structures of In Double Layers on Si(111)√3×√3-B Substrates, The 22nd International Vacuum Congress, Sept. 2022.
• Insung Seo, Kan Nakatsuji, Hiroyuki Hirayama, Yoshihiro Gohda. Electronic structure of In ultrathin films adsorbed on Si(111)√3×√3-B surfaces, European Conference on Surface Science 35, Aug. 2022.
• Insung Seo, Kan Nakatsuji, Hiroyuki Hirayama, Yoshihiro Gohda. Structural and Electronic Properties of In Double Layers on Si(111)√3×√3-B, The 2022 MRS Spring Meeting, May 2022.
• I. Seo, K. Nakatsuji, H. Hirayama, Y. Gohda. First-principles study of In double layers on Si(111) √3 × √3 -B substrates, The 9th International Symposium on Surface Science, Dec. 2021.
• Taiga Kasai, Tsuyoshi Yamagami, Kan Nakatsuji, Hiroyuki Hirayama. STM observation of Bi-intercalated graphene/Bi/Cu(111), The 9th International Symposium on Surface Science (ISSS9), Nov. 2021.
• Maimi Shimura, Ryota Ushioda, Kan Nakatsuji, Hiroyuki Hirayama. Nucleation of ultrathin Bi(110) film on the Si(111)√3×√3-B substrate in the two step growth, The 9th International Symposium on Surface Science (ISSS9), Nov. 2021.
• Naoki Sasagawa, Ryota Ushioda, Kan Nakatsuji, Hiroyuki Hirayama. Structure of Bi(111) terraces nucleated on the Bi(110) island, The 9th International Symposium on Surface Science (ISSS9), Nov. 2021.
• T. Ouchi, L. Nakamura, K. Takemura, M. Shimura, R. Ushioda, T. Iimori, F. Komori, H. Hirayama, K. Nakatsuji. Electronic structure of Bi(110) ultra-thin films grown on n-type Si(111)√3×√3-B substrates, 13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC’21), Oct. 2021.
• N. Morii, K. Nagatomo, K. Takemura, T. Ouchi, H. Uryu, S. Nagao, R. Kawazoe, T. Iimori, F. Komori, H. Hirayama, K. Nakatsuji. Electronic structure of Cu(001)c(4×2)-Bi surface, 13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC’21), Oct. 2021.
• Kei Nagatomo, N. Morii, K. Takemura, T. Iimori, F. Komori, H. Hirayama, K. Nakatsuji. Electronic structure of PdCu surface alloy, 13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC’21), Oct. 2021.
• K. Nagase, S. Yamazaki, K. Nakatsuji, H. Hirayama. Structural change of Bi ultrathin films in the two-step growth on Si(111)√3 x √3-B substrates, 12th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC-19), Oct. 2019.
• T. Yamagami, S. Yotsutani, S. Yamazaki, K. Nakatsuji, H. Hirayama. Characterization of Mono- and multilayer hexagonal Boron Nitride on Cu (111) substrate, 12th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC-19), Oct. 2019.
• K. Nakatsuji, Y. Shimokawa, T. Fujiwara, K. Nagase, S. Yamazaki, Y. Watanabe, K. Mase, K. Takahashi, H. Hirayama. Electronic Structure of Bi(110) Islands Grown on a Si(111)Root3×Root3-B Substrate, 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14), Oct. 2018.
• T. Ogino, S. Yamazaki, K. Nakatsuji, H. Hirayama. Suppression of Metal-Insulator Transition by Electron Doping from Substrates to Indium Atomic Wires: Si(111)4×1-In, 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14), Oct. 2018.
• K. Nagase, I. Kokubo, S. Yamazaki, K. Nakatsuji, H. Hirayama. Atomic Structure and Growth of Bi(110) Islands on Si(111)Root3×Root3-B Substrates, 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14), Oct. 2018.
• T.Ogino, S. Yamazaki, K. Nakatsuji, H. Hirayama. Electron doping induced control of Metal-Insulator transition on Si(111)4x1-In surface, The 8th International Symposium on Surface Science (ISSS-8), Oct. 2017.
• K. Sugawara, K. Nagase, S. Yamazaki, K. Nakatsuji, H. Hirayama. Interaction of Image-Potential States with Quantum-Well State in Ultra-thin Ag(111) films on Si(111)Root3xRoot3-B substrate, The 8th International Symposium on Surface Science (ISSS-8), Oct. 2017.
• Y. Shimokawa, T. Fujiwara, K. Nagase, S. Yamazaki, Y. Watanabe, M. Nakatake, K. Mase, K. Takahashi, K. Nakatsuji, H. Hirayama. Electronic structure of Bi(110) ultra-thin films grown on Si(111)Root3×Root3-B surfaces, The 8th International Symposium on Surface Science (ISSS-8), Oct. 2017.
• K. Nagase, S. Yamazaki, K. Nakatsuji, H. Hirayama. Even-odd-parity and electronic structure of Bi(110) ultra-thin films, The 8th International Symposium on Surface Science (ISSS-8), Oct. 2017.
• Y. Takagi, S. Yamazaki, K. Nakatsuji, H. Hirayama. Fabrication of Monolayer Graphene Using a Liquid Droplet Method, The 15th International Conference on the Formation of Semiconductor Interfaces (ICFSI-15), Nov. 2015.
• I. Kokubo, Y. Yoshiike, K. Shishikura, K. Nakatsuji, H. Hirayama. Ultra-thin Bi(110) films on Si(111)√3x√3-B substrates, AVS 62nd International Symposium (AVS62), Oct. 2015.
• Y. Yoshiike, I. Kokubo, Y. Aoki, K. Nakatsuji, H. Hirayama. STM imaging of the buried interface structures at ultra-thin Ag films/Si(111) substrates, AVS 61st International Symposium (AVS61), Nov. 2014.
• Y. Yoshiike, I. Kokubo, Y. Aoki, K. Nakatsuji, H. Hirayama. Periodic ripples at the surfaces of Ag ultra-thin-films on Si(111)√3x√3-B substrates, The 7th International Symposium on Surface Science (ISSS-7), Nov. 2014.
• Y. Yoshiike, H. Fukumoto, Y. Aoki, K. Nakatsuji, H. Hirayama. Ripples structure of Ag(111) ultra-thin films on Si(111)7x7 substrates, 12th International Conference on Atomically Controlled Surface, Interfaces and Nanostructures (ACSIN12), Nov. 2013.

国際会議発表 (査読なし・不明)

• T. Ogino, I. Seo, H. Tajiri, M. Nakatake, S. Takakura, Y. Sato, Y. Hasegawa, Y. Gohda, K. Nakatsuji, H. Hirayama. Intrinsic superconductivity of two monolayer thick Indium film, The 22nd International Vacuum Congress, Sept. 2022.
• T. Kasai, T. Yamagami, K. Nakatsuji, H. Hirayama. Bi Intercalation at the Graphene/Cu(111) Interface, The 22nd International Vacuum Congress, Sept. 2022.
• N. Sasagawa, Y. Itakura, K. Kizaki, K. Nakatsuji, H. Hirayama. Observation of the buried interface under the ultrathin In film on the Si(111)7x7 substrate; Revisit, The 22nd International Vacuum Congress, Sept. 2022.
• K. Nakatsuji, Y. Shimokawa, T. Fujiwara, K. Nagase, S. Yamazaki, Y. Watanabe, K. Mase, K. Takahashi, H. Hirayama. Electronic structure of Bi(110) ultra-thin films grown on a Si(111)√3 x √3-B substrate, 21st International Vacuum Congress, July 2019.

国内会議発表 (査読なし・不明)

• 織田孝幸, 長尾俊佑, 笹川直希, 大内拓実, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. Si(111)√3×√3-Ag 基板上のBi超薄膜の表面構造と電子状態, 日本物理学会2024年春季大会, Mar. 2024.
• 河添理央, 片野達貴, 大島尚樹, 加賀大暉, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. Cu(001)基板上のPd超薄膜における合金化と電子状態, 日本物理学会2024年春季大会, Mar. 2024.
• 竹村晃一, 片野達貴, 河添理央, Insung Seo, 飯盛拓嗣, 小森文夫, 小澤健一, 間瀬一彦, 合田義弘, 平山博之, 中辻寛. SiC(0001)基板上に成長したグラフェンへのFeインターカレーション, 日本物理学会2023年春季大会, Mar. 2023.
• 長尾俊佑, 大内拓実, 瓜生瞳美, 織田孝幸, 飯盛拓嗣, 小森文夫, 中辻寛, 平山博之. Si(111)√3×√3-Ag 表面上のBi(110)超薄膜の電子状態, 日本物理学会2023年春季大会, Mar. 2023.
• 瓜生瞳美, 長尾俊佑, 平山博之, 中辻寛. (In,Bi)/Si(111)表面の原子構造, 日本物理学会2023年春季大会, Mar. 2023.
• 永友慶, 森井七生, 竹村晃一, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. PdCu表面合金層の電子構造と水素曝露が及ぼす影響, Mar. 2022.
• 笹川直希, 板倉悠太, 木崎京香, 中辻寛, 平山博之. Si(111)7×7基板上のIn薄膜における結晶成長と埋もれた界面の研究, 日本物理学会第76回年次大会, Mar. 2022.
• 志村舞望, 潮田亮太, 中辻寛, 平山博之. 二段階成長における平坦な黒燐構造Bi(110)超薄膜の成長過程, 日本物理学会第76回年次大会, Mar. 2022.
• 森井七生, 永友慶, 竹村晃一, 河添理央, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. Cu(001)c(4×2)-Bi表面の構造形成と電子状態, 日本物理学会第76回年次大会, Mar. 2022.
• 大内拓実, 長尾俊祐, 中村玲雄, 竹村晃一, 志村舞望, 潮田亮太, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. Si(111)√3×√3-B 表面上のBi(110)超薄膜の電子状態における基板依存性, 日本物理学会第76回年次大会, Mar. 2022.
• 大内拓実, 中村玲雄, 竹村晃一, 志村舞望, 潮田亮太, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. Si(111)√3×√3-B表面上のBi(110)超薄膜の電子状態, 2021年日本表面真空学会学術講演会, Nov. 2021.
• 森井七生, 永友慶, 竹村晃一, 大内拓実, 瓜生瞳美, 長尾俊佑, 河添理央, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. Cu(001)c(4×2)-Bi表面の電子状態, 2021年日本表面真空学会学術講演会, Nov. 2021.
• 永友慶, 森井七生, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. PdCu表面合金層の電子構造, 2021年日本表面真空学会学術講演会, Nov. 2021.
• 志村舞望, 潮田亮太, 中辻寛, 平山博之. Si基板上における低温蒸着した黒燐構造Bi超薄膜の室温アニールによる成長過程, 日本物理学会2021年秋季大会, Sept. 2021.
• 笠井大雅, 山上剛史, 中辻寛, 平山博之. Biをインターカレートさせたグラフェン/Bi[2012]/Cu(111)のSTM観測, 日本物理学会2021年秋季大会, Sept. 2021.
• 笹川直希, 潮田亮太, 中辻寛, 平山博之. Si(111)7×7基板上に低温蒸着させたビスマス超薄膜の構造相転移の臨界点におけるBi(111)テラスの構造, 日本物理学会2021年秋季大会, Sept. 2021.
• 勝俣錬, 中村玲雄, 金野達, 木村彰博, 大内拓実, 永友慶, 田中和也, 下川裕理, 小澤健一, 間瀬一彦, 小森文夫, 飯盛拓嗣, 平山博之, 中辻寛. Si(111)√3×√3-(Bi,In)表面の電子状態, 日本物理学会第76回年次大会, Mar. 2021.
• 木村 彰博, 森井 七生, 佐藤 圭介, 永友 慶, 小澤 健一, 小森 文夫, 飯盛 拓嗣, 平山 博之, 中辻 寛. Cu(001)表面上のFe薄膜に及ぼす酸素・窒素サーファクタントの影響, 日本物理学会第76回年次大会, Mar. 2021.
• 白澤 徹郎, 潮田 亮太, 中辻 寛, 平山 博之. 表面X線散乱による低温蒸着した黒燐構造Bi超薄膜の成長過程観察, 日本物理学会第76回年次大会, Mar. 2021.
• 潮田 亮太, 志村 舞望, 笠井 大雅, 笹川 直希, 長瀬 謙太郎, 中辻 寛, 平山 博之. 黒燐構造Bi 超薄膜の成長過程と構造相転移の蒸着レート制御, 日本物理学会第76回年次大会, Mar. 2021.
• 志村 舞望, 潮田 亮太, 中辻 寛, 平山 博之. Si(111)表面上における黒リン構造Bi(110)超薄膜の低温蒸着による成長過程, 日本物理学会第76回年次大会, Mar. 2021.
• 山上剛史, 中辻寛, 平山博之. ビスマス原子を吸着させたグラフェン/Cu(111)表面における原子構造・電子状態, 日本物理学会第76回年次大会, Mar. 2021.
• 荻野嵩大, 田尻寛男, 中辻寛, 平山博之. X線CTR散乱による√7×√3-In-rect/Si(111)√3×√3-Bの界面構造の測定, 日本物理学会第76回年次大会, Mar. 2021.
• 中村玲雄, 勝俣錬, 潮田亮太, 大内拓実, 小森文夫, 飯盛拓嗣, 平山博 之, 中辻寛. n-type Si(111)√3×√3-B 表面上のBi(110)超薄膜の電子状態, 日本物理学会第76回年次大会, Mar. 2021.
• 諸貫 亮太, 大内 拓実, 永友 慶, 森井 七生, 金野 達, 白澤 徹郎, 平山 博之, 中辻 寛. Si(110)3×2-Bi表面の構造解析, 日本物理学会第76回年次大会, Mar. 2021.
• 金野達, 勝俣錬, 木村彰博, 中村玲雄, 諸貫亮太, 山崎詩郎, 小澤健一, 間瀬一彦, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. Si(110)3×2-Bi表面の電子状態, 2020年日本表面真空学会学術講演会, Nov. 2020.
• 白澤徹郎, Wolfgang Voegeli, 荒川悦雄, 高橋敏男, 潮田亮太, 中辻寛, 平山博之. 変形黒鱗構造Bi超薄膜の原子スケール成長機構解析, 日本物理学会2020年秋季大会, Sept. 2020.
• 金野達, 勝俣錬, 木村彰博, 中村玲雄, 山崎詩郎, 小澤健一, 間瀬一彦, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. Si(110)3x2-Bi表面の電子状態, 日本物理学会第75回年次大会, Mar. 2020.
• 潮田亮太, 長瀬謙太郎, 荻野嵩大, 車尾ヴァレンティン基, 中辻 寛, 白澤 徹郎, 平山 博之. Si(111)7×7 基板上における奇数層高さBi(110)島の出現, 日本物理学会第75回年次大会, Mar. 2020.
• 長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之. Si(111)√3×√3-B基板上に低温蒸着したビスマス超薄膜の室温アニールによる構造変化(2), 日本物理学会2019年秋季大会, Sept. 2019.
• 山上剛史, 四ツ谷壮一郎, 山崎詩郎, 中辻寛, 平山博之. Cu(111)上に成長させたh-BN膜における成長様式・電子状態の層数依存性, 日本物理学会2019年秋季大会, Sept. 2019.
• 菅原喜周, 板倉悠太, 山崎詩郎, 中辻寛, 平山博之. Si(111)基板上Ag(111)超薄膜の有効量子井戸幅評価, 日本物理学会第74回年次大会, Mar. 2019.
• 田中和也, 金野達, 下川裕理, 佐藤圭介, 山崎詩郎, 飯盛拓嗣, 小森文夫, 間瀬一彦, 平山博之, 中辻寛. Si(111)基板上におけるBi-In表面合金の構造と電子状態, 日本物理学会第74回年次大会, Mar. 2019.
• 佐藤圭介, 金野達, 木村彰博, 渡邊瞳, 田中和也, 山崎詩郎, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛. 酸素サーファクタントを用いてCu(001)表面上に作製したFe薄膜の表面構造と電子状態, 日本物理学会第74回年次大会, Mar. 2019.
• 菅原喜周, 板倉悠太, 山崎詩郎, 中辻寛, 平山博之. Ag超薄膜/Si(111)基板界面wetting layerの結晶化に伴う量子井戸準位のエネルギーシフト, Sept. 2018.
• 長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之. Si(111)√3x√3-B基板上に低温吸着したビスマス超薄膜のアニールによる構造変化, 日本物理学会2018年秋季大会, Sept. 2018.
• 板倉悠太, 菅原喜周, 山崎詩郎, 中辻寛, 平山博之. Ag超薄膜中の量子閉じ込めにおけるwetting layerの効果, 日本表面科学会 第3回関東支部講演大会, Apr. 2018.
• 車尾ヴァレンティン基, 荻野嵩大, 山崎詩郎, 中辻寛, 平山博之. Si(111)√3x√3-B基板上のIn吸着表面超構造, 日本表面科学会 第3回関東支部講演大会, Apr. 2018.
• 長瀬謙太郎, 小久保郁也, 山崎詩郎, 中辻寛, 平山博之. Si(111)√3x√3-B表面上に成長したBi(110)超薄膜の構造, SPRUC顕微ナノ材料科学研究会・表面科学会放射光部会・プローブ顕微鏡研究部会合同シンポジウム, Mar. 2018.
• 車尾ヴァレンティン基, 荻野嵩大, 山崎詩郎, 中辻寛, 平山博之. Si(111)√3x√3-B表面のIn吸着構造, 日本物理学会第73回年次大会, Mar. 2018.
• 吉池雄作, 田尻寛男, 山崎詩郎, 中辻寛, 平山博之. 表面X線回折によるAg/Si(111)√3x√3-B界面構造の研究, 日本物理学会第73回年次大会, Mar. 2018.
• 下川裕理, 田中和也, 佐藤圭介, 渡邊瞳, 山崎詩郎, 飯盛拓嗣, 小森文夫, 間瀬一彦, 平山博之, 中辻寛. Bi/Si(111)4×1-In表面の構造と電子状態, 日本物理学会第73回年次大会, Mar. 2018.
• 平山博之. ビスマス超薄膜の成長・構造・電子状態, 第６回 “次世代デバイス実現に向けた先端二次元物質の物理と化学”研究会, Nov. 2017.
• 長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之. 低温蒸着によるBi超薄膜の構造と電子状態, 日本物理学会2017年秋季大会, Sept. 2017.
• 山上剛史, 高木優香, 山崎詩郎, 中辻寛, 平山博之. アンモニアボラン分子蒸着による銅表面上での六方晶窒化ホウ素の合成, 日本物理学会2017年秋季大会, Sept. 2017.
• 下川裕理, 藤原翼, 長瀬謙太郎, 山崎詩郎, 渡辺義夫, 仲武昌史, 間瀬一彦, 高橋和敏, 中辻寛, 平山博之. Si(111)√3x√3-B表面上に成長した数層Bi(110)薄膜の電子状態, 日本物理学会2017年秋季大会, Sept. 2017.
• 荻野嵩大, 山崎詩郎, 中辻寛, 平山博之. キャリアドーピングによるSi(111)4xi-In表面の金属―絶縁体転移の制御, 日本物理学会2017年秋季大会, Sept. 2017.
• 石綿慈, 山崎詩郎, 中辻寛, 平山博之. グラファイト表面上のモアレ構造部分におけるdz/dVスペクトル測定, 日本物理学会2017年秋季大会, Sept. 2017.
• 荻野嵩大, 平山博之, 中辻寛, 山崎詩郎. Si(111)4x1-In表面における電子ドーピングによる金属―絶縁体転移の操作, 第37回表面科学学術講演会, Aug. 2017.
• 長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之. Bi(110)超薄膜の膜厚偶奇性と電子状態, 第37回表面科学学術講演会, Aug. 2017.
• 菅原喜周, 長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之. Ag(111)超薄膜中の量子井戸準位と真空中の鏡像準位におけるavoided crossingの測定, 第37回表面科学学術講演会, Aug. 2017.
• 長瀬 謙太郎, 渡辺 成栄, 山崎 詩郎, 合田 義弘, 中辻 寛, 平山 博之. Si(111)√3×√3-B表面上に形成されるBi(110)超薄膜の電子状態(II), 日本物理学会第72回年次大会, Mar. 2017.
• 菅原喜周, 長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之. Si(111)√3×√3-B 表面上Ag(111)超薄膜のImage Potential Stateの測定, 日本物理学会第72回年次大会, Mar. 2017.
• 藤原翼, 下川裕理, 長瀬謙太郎, 山崎詩郎, 間瀬一彦, 渡辺義夫, 仲武昌史, 中辻寛, 平山博之. Si(111)√3×√3-B 表面上のBi(110)超薄膜の成長と電子状態, 日本物理学会第72回年次大会, Mar. 2017.
• 平山博之, 中辻寛. STM,ARPESによるBi薄膜の構造と電子状態の研究, 第11回 放射光表面科学研究部会 顕微ナノ材料科学研究会 合同シンポジウム, Mar. 2016.

特許など

• 細野秀雄, 平山博之, 戸田喜丈. 二酸化炭素の吸着還元剤及び還元方法. 特許. 公開. 国立大学法人東京工業大学. 2010/07/26. 特願2010-167366. 2012/02/09. 特開2012-025636. 2012. Feb.

学位論文

• Study on In/Si(111) Surface Superstructures by angle-resolved electron energy loss spectroscopy,  Thesis,  Doctor of Engineering,  東京大学,  1986/--/--, 

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