Journal Paper

• J. Yaita, T.Suto, M. Natal, S. E. Saddow, M. Hatano, T. Iwasaki. In-situ bias current monitoring of nucleation for epitaxial diamonds on 3C-SiC/Si substrates, Diamond & Related Materials, Vol. 88, pp. 158-162, Sept. 2018.
• J. Yaita, T. Tsuji, M. Hatano, T. Iwasaki. Preferentially-aligned nitrogen-vacancy centers in heteroepitaxial (111) diamonds on si substrates via 3C-SiC intermediate layers, Appl. Phys. Express, Vol. 11, pp. 045501.1〜4, Mar. 2018.

Domestic Conference (Not reviewed / Unknown)

• Haruka Hoshino, Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. ヘテロエピタキシャル核形成プロセスにおけるバイアス 電流のモニタリング, 第65回応用物理学会 春季学術講演会, Mar. 2018.
• Takuya Murooka, Junya Yaita, Takayuki Iwasaki, 牧野 俊晴, 小 倉 政彦, 加藤 宙光, Natal Meralys, Saddow Stephen E., 山崎 聡, Mutsuko Hatano. 3C-SiC/Si 基板上に形成したヘテロエピタキシャルダイ ヤモンドSBD の電気特性, 第65回応用物理学会 春季学術講演会, Mar. 2018.

Other Publication

• Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano. Heteroepitaxy of diamond on SiC, Power Electronics Device Applications of Diamond Semiconductors, Woodhead Publishing, pp. 81-97, July 2018.

Degree

• Study of diamond heteroepitaxy on Si substrates for power and sensor devices,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/03/26,   
• Study of diamond heteroepitaxy on Si substrates for power and sensor devices,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/03/26,   
• Study of diamond heteroepitaxy on Si substrates for power and sensor devices,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2018/03/26,   

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