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Publication List - Huy Ho-Hoang 2023 (6 / 20 entries)
Journal Paper
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Ho Hoang Huy,
Zhang Ruixian,
Takanori Shirokura,
Shigeki Takahashi,
Yoshiyuki Hirayama,
Pham Nam Hai.
Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory,
IEEE Transactions on Magnetics,
Vol. 59,
No. 11,
pp. 3400905,
May 2023.
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Ho Hoang Huy,
Julian Sasaki,
Nguyen Huynh Duy Khang,
Pham Nam Hai,
Q. LE,
B. YORK,
C. Hwang,
X. LIU,
M. GRIBELYUK,
X. XU,
S. LE,
M. HO,
H. TAKANO.
Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology,
Applied Physics Letters,
Vol. 122,
pp. 052401,
Jan. 2023.
International Conference (Reviewed)
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Ho Hoang Huy,
Zhang Ruixian,
Takanori Shirokura,
Shigeki Takahashi,
Yoshiyuki Hirayama,
Pham Nam Hai.
Large spin Hall effect in BiSb topological insulator/CrOx/CoFeB/MgO with perpendicular magnetic anisotropy for ultralow power SOT-MRAM,
The 8th International Conference on Applied & Engineering Physics (CAEP-8),
Oct. 2023.
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B.R. York,
Q. Le,
X. Liu,
S. Okamura,
C. Hwang,
M.A. Gribelyuk,
S. Le,
J. Liu,
R. Simmons,
M. Maeda,
F. Tuo,
Y. Tao,
J. Ohno,
H. Takano,
P.N. Hai,
H. H. Huy,
S. Namba.
(Invited) High Thermal Reliability and High Spin Hall Angle Observed in SOT-Reader Thin Films Using BiSbX Topological Insulators,
TMRC 2023,
July 2023.
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Ho Hoang Huy,
Zhang Ruixian,
Takanori Shirokura,
Shigeki Takahashi,
Yoshiyuki Hirayama,
Pham Nam Hai.
Integration of BiSb topological insulator and CoFeB/MgO with perpendicular magnetic anisotropy using an oxide interfacial layer for ultralow power spin-orbit torque magnetic memory,
Intermag 2023,
May 2023.
Domestic Conference (Not reviewed / Unknown)
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