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Publication List - Toru Kanazawa 2016 (21 / 154 entries)
Journal Paper
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Tomohiro Amemiya,
Toru Kanazawa,
Takuo Hiratani,
Nobuhiko Nishiyama,
SHIGEHISA ARAI,
Tatsuhiro Urakami,
Takuo Tanaka,
Atsushi Ishikawa.
光学迷彩とメタマテリアルフィルム,
光技術コンタクト,
Vol. 54,
No. 11,
pp. 27-36,
Nov. 2016.
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Nobukazu Kise,
Haruki Kinoshita,
Atsushi Yukimachi,
Toru Kanazawa,
Yasuyuki Miyamoto.
Fin width dependence on gate controllability of InGaAs channel FinFETs with regrown source/drain,
Solid-State Electronics,
Vol. 126,
pp. 92-95,
Sept. 2016.
Official location
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Toru Kanazawa,
Tomohiro Amemiya,
YASUYUKI MIYAMOTO.
二次元材料HfS2を用いたMOSトランジスタ,
月刊機能材料,
Vol. 36,
No. 9,
pp. 46-52,
Sept. 2016.
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Tomohiro Amemiya,
Masato Taki,
Toru Kanazawa,
Takuo Hiratani,
Shigehisa Arai.
(Invited paper) Transformation Physics and Camouflage,
IEICE Transactions on Electronics,
Vol. J99-C,
No. 4,
pp. 67-83,
Apr. 2016.
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Toru Kanazawa,
Tomohiro Amemiya,
Atsushi Ishikawa,
Vikrant Upadhyaya,
Kenji Tsuruta,
Takuo Tanaka,
Yasuyuki Miyamoto.
Few Layer HfS2 FET,
Scientific Reports,
Vol. 6,
pp. 22277,
Mar. 2016.
Official location
International Conference (Reviewed)
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Toru Kanazawa,
Tomohiro Amemiya,
Vikrant Upadhyaya,
Atsushi Ishikawa,
Kenji Tsuruta,
Takuo Tanaka,
Yasuyuki Miyamoto.
Effect of the HfO2 passivation on HfS2 Transistors,
16th International Conference on Nanotechnology (IEEE NANO 2016),
No. ThAM11.3,
Aug. 2016.
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Vikrant Upadhyaya,
Toru Kanazawa,
YASUYUKI MIYAMOTO.
Vacuum annealing and passivation of Hf2 FET for mitigation of atmospheric degradation,
2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016),
A5-7,
pp. 231-235,
July 2016.
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Tomohiro Amemiya,
Toru Kanazawa,
Atsushi Ishikawa,
Nobuhiko Nishiyama,
Yasuyuki Miyamoto,
Tatsuhiro Urakami,
Takuo Tanaka,
Shigehisa Arai.
(Invited) Permeability Engineering in Optical Communication Devices,
The First A3 Metamaterials Forum,
I-25,
July 2016.
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Haruki Kinoshita,
Nobukazu Kise,
Atsushi Yukimachi,
Toru Kanazawa,
Yasuyuki Miyamoto.
Operation of 16-nm InGaAs channel multi-gate MOSFETs with regrown source/drain,
Compound Semiconductor Week (CSW2016),
TuD4-2,
June 2016.
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Tomohiro Amemiya,
Toru Kanazawa,
Tatsuhiro Urakami,
Atsushi Ishikawa,
Naoya Hojo,
Akio Yasui,
Nobuhiko Nishiyama,
Takuo Tanaka,
Shigehisa Arai.
Metafilm: Metamaterial Array Embedded in Organic Thin Film,
The Conference on Lasers and Electro-Optics 2016 (CLEO 2016),
FTh1D.2,
June 2016.
Domestic Conference (Not reviewed / Unknown)
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Toru Kanazawa,
Vikrant Upadhyaya,
Tomohiro Amemiya,
Atsushi Ishikawa,
鶴田 健二,
Takuo Tanaka,
YASUYUKI MIYAMOTO.
HfO2パッシベーションによるHfS2 FETの特性改善,
第77回応用物理学会秋季学術講演会,
No. 16a-A32-3,
Sept. 2016.
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Tomohiro Amemiya,
Toru Kanazawa,
Takuo Hiratani,
Daisuke Inoue,
Zhichen Gu,
Tatsuhiro Urakami,
SHIGEHISA ARAI.
有機薄膜光集積回路:各素子の特性解析,
第77回応用物理学会秋季学術講演会,
No. 15p-B8-10,
Sept. 2016.
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Tomohiro Amemiya,
Satoshi Yamasaki,
Toru Kanazawa,
Takuo Hiratani,
Junichi Suzuki,
Nobuhiko Nishiyama,
SHIGEHISA ARAI.
メタマテリアルを用いたSi 導波路型光バッファの提案,
第77回応用物理学会秋季学術講演会,
No. 15p-B8-9,
Sept. 2016.
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Tomohiro Amemiya,
Toru Kanazawa,
Takuo Hiratani,
Zhichen Gu,
Naoya Hojo,
浦上 達宣,
SHIGEHISA ARAI.
有機薄膜光集積回路,
電子情報通信学会 レーザ・量子エレクトロニクス研究会(LQE), IEICE Technical Report, Vol. 116, No. 52, pp. 5-10, May 2016.,
May 2016.
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Vikrant Upadhyaya,
Toru Kanazawa,
Yasuyuki Miyamoto.
Evaluation of electrical properties of HfS2 thin flakes obtained by mechanical exfoliation,
電子情報通信学会電子デバイス研究会,
信学技報,
vol. 116,
no. 48,
pp. 47-50,
May 2016.
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Upadhyaya Vikrant,
kanazawa Toru,
Miyamoto Yasuyuki.
Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistor,
第63回応用物理学会春季学術講演会,
21p-H103-2,
Mar. 2016.
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Tomohiro Amemiya,
Toru Kanazawa,
浦上 達宣,
Atsushi Ishikawa,
Naoya Hojo,
Akio Yasui,
Nobuhiko Nishiyama,
Takuo Tanaka,
SHIGEHISA ARAI.
Metafilm : メタマテリアルを内包した有機薄膜フィルム,
第63回応用物理学会春季学術講演会,
No. 21p-S321-2,
Mar. 2016.
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Tomohiro Amemiya,
Toru Kanazawa,
Takuo Hiratani,
Zhichen Gu,
Naoya Hojo,
Yuki Kuno,
浦上 達宣,
SHIGEHISA ARAI.
有機薄膜光集積回路,
第63回応用物理学会春季学術講演会,
No. 21p-S321-3,
Mar. 2016.
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Haruki Kinoshita,
Nobukazu Kise,
Netsu Seikou,
Toru Kanazawa,
YASUYUKI MIYAMOTO.
再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作,
第63回応用物理学会春季学術講演会,
22p-W541-5,
Mar. 2016.
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Haruki Kinoshita,
Nobukazu Kise,
Netsu Seikou,
Toru Kanazawa,
YASUYUKI MIYAMOTO.
[22p-W541-5] 再成長S/Dを有するInGaAsマルチゲートMOSFETのLch=16nm動作,
第63回応用物理学会春季学術講演会,
Mar. 2016.
Patent
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