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Publication List - YASUYUKI MIYAMOTO 2005 (11 / 477 entries)
Journal Paper
International Conference (Reviewed)
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Y. Miyamoto,
R. Nakagawa,
I. Kashima,
K. Takeuchi,
Y. Yamada,
T. Fujisaki,
M. Ishida,
KAZUHITO FURUYA.
25 nm Wide Emitter and Precise Alignment between Gate and Emitter in InP Hot Electron Transistors,
The 6th Topical Workshop on Heterostructure Microelectronics (TWHM 2005),
Topical Workshop on Heterostructure Microelectronics,
pp. TuC-3,
Aug. 2005.
International Conference (Not reviewed / Unknown)
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K. Furuya,
N. Machida,
R. Nakagawa,
I. Kashima,
M. Ishida,
Y. Miyamoto.
MC simulation and fabrication of ultrafast transistor using ballistic electron in intrinsic semiconductor,
Second Joint International Conference on New Phenomena in Mesoscopic Systems and Surfaces and Interfaces of Mesoscopic Devices,
Second Joint International Conference on New Phenomena in Mesoscopic Systems and Surfaces and Interfaces of Mesoscopic Devices,
pp. P28,
Nov. 2005.
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Y. Miyamoto,
R. Nakagawa,
I. Kashima,
M. Ishida,
K. Furuya.
Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate,
2005 International Conference on Solid State Devices and Materials (SSDM 2005),
International Conference on Solid State Devices and Materials,
pp. I-2-6,
Sept. 2005.
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鹿嶋一生,
古屋一仁,
宮本恭幸,
中川 亮.
InP系ホットエレクトロントランジスタにおけるエミッタ接地の飽和特性とゲートリーク電流の低減,
応用物理学会学術講演会,
応用物理学会,
7a-W-11,
Sept. 2005.
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Y. Miyamoto,
M. Ishida,
T. Nonaka,
T. Yamamoto,
K. Furuya.
Tungsten Buried Growth by Using Thin Flow-Liner for Small Collector Capacitance in InP HBT,
International Conference on Indium Phosphide and Related,
International Conference on Indium Phosphide and Related,
pp. TuA-1-4,
May 2005.
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Y. Miyamoto,
Y. Watanabe,
W. Qiu,
K. Furaya.
Analysis of lateral current spreading in collector of submicron HBT,
International Conference on Indium Phosphide and Related,
International Conference on Indium Phosphide and Related,
pp. WP-15,
May 2005.
Domestic Conference (Not reviewed / Unknown)
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Y.Miyamoto,
R. Nakagawa,
K. Takeuchi,
Y. Yamada,
T. Fujisaki,
M. Ishida,
K. Furuya.
InP ballistic hot electron transistors with 25 nm wide emitter,
24th Electronic Materials Symposium,
24th Electronic Materials Symposium,
pp. E9,
July 2005.
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Y. Miyamoto,
M. Ishida,
T. Nonaka,
T. Yamamoto,
K. Furuya.
Tungsten buried growth by using thin flow-liner for small collector capacitance in InP HBT,
応用物理学会関係連合講演会,
応用物理学会,
pp. 1a-ZM-10,
Apr. 2005.
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Yasuyuki Miyamoto,
Yasuhiro Watanabe.
Deep submicron InP HBT,
電気学会研究会,
電気学会,
pp. EDD-05-39,
Mar. 2005.
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Y. Watanabe,
Wei-bin Qiu,
Y. MIYAMOTO,
K. FURUYA.
Analysis of lateral current spreading in collector of submicron HBT,
応用物理学会関係連合講演会,
応用物理学会,
pp. 31p-S-1,
Mar. 2005.
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