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Publication List - MASAHIRO WATANABE 2018 (12 / 322 entries)
Journal Paper
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Akira CHIBA,
Koichi YASUOKA,
Shigeki NAKAGAWA,
Hiroshi AKATSUKA,
Atsuhiro NISHIKATA,
Makoto HAGIWARA,
Masahiro WATANABE,
Nozomi TAKEUCHI,
Shungo ZEN,
Ei TOKIOKA.
Improve Understanding of Basic Engineering Lectures with e-learning - Department of Electrical and Electronics Engineering -,
Journal of JSEE,
Japanese Society for Engineering Education,
Vol. 66,
No. 5,
Oct. 2018.
Official location
International Conference (Reviewed)
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T. Saraya,
K. Itou,
T. Takakura,
M. Fukui,
S. Suzuki,
K. Takeuchi,
M. Tsukuda,
Y. Numasawa,
K. Satoh,
T. Matsudai,
W. Saito,
K. Kakushima,
T. Hoshii,
K. Furukawa,
M. Watanabe,
N. Shigyo,
K. Tsutsui,
H. Iwai,
A. Ogura,
S. Nishizawa,
I. Omura,
H. Ohashi,
T. Hiramoto.
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss,
International Electron Devices Meeting (IEDM2018),
Dec. 2018.
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Hiroki Tonegawa,
Yoshiro Kumagai,
Satoshi Fukuyama,
Koudai Hirose,
MASAHIRO WATANABE.
Room Temperature High Peak-to-valley Current Ratio of CaF2/Si Triple-barrier Resonant-tunneling Diode Grown on Si,
The 2018 International Conference on Solid State Devices and Materials,
Sept. 2018.
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Takuya Hoshii,
Kazuyoshi Furukawa,
Kuniyuki Kakushima,
Masahiro Watanabe,
Naoyuki Shigyo,
Takuya Saraya,
Toshihiko Takakura,
Kazuo Itou,
Munetoshi Fukui,
Shinichi Suzuki,
Kiyoshi Takeuchi,
Iriya Muneta,
Hitoshi Wakabayashi,
Sinichi Nishizawa,
Kazuo Tsutsui,
Toshiro Hiramoto,
Hiromichi Ohashi,
Hiroshi Iwai.
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately,
44th European Solid-State Circuits Conference (ESSDERC2018),
Sept. 2018.
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K. Kakushima,
T. Hoshii,
M. Watanabe,
N. Shigyo,
K. Furukawa,
T. Saraya,
T. Takakura,
K. Itou,
M. Fukui,
S. Suzuki,
K. Takeuchi,
I. Muneta,
H. Wakabayashi,
Y. Numasawa,
A. Ogura,
S. Nishizawa,
K. Tsutsui,
T. Hiramoto,
H. Ohashi,
H. Iwai.
New methodology for evaluating minority carrier lifetime for process assessment,
Symp. On VLSI Technology (VLSI2018),
June 2018.
Domestic Conference (Not reviewed / Unknown)
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Satoshi Fukuyama,
MASAHIRO WATANABE.
Evaluation of current-voltage characteristics of single barrier tunneling diode using atomically-thin CaF2/Si heterostructure,
The 79th Autumn Meeting of The Jpn. Soc. of Appl. Phys.,
p. 12-433,
Sept. 2018.
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Yoshiro Kumagai,
Soichiro Ono,
Koudai Hirose,
Satoshi Fukuyama,
Hiroki Tonegawa,
MASAHIRO WATANABE.
Room temperature negative differential resistance of CaF2/Si/CaF2 resonant-tunneling structures fabricated by dry etching,
The 79th Autumn Meeting of The Jpn. Soc. of Appl. Phys.,
p. 12-434,
Sept. 2018.
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Koudai Hirose,
Satoshi Fukuyama,
Yoshiro Kumagai,
Hiroki Tonegawa,
MASAHIRO WATANABE.
Room Temperature Negative Differential Resistance of Si/CaF2 Double-barrier Resonant Tunneling Diodes,
The 79th Autumn Meeting of The Jpn. Soc. of Appl. Phys.,
p. 12-432,
Sept. 2018.
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Yusuke Saito,
Hiroki Kondo,
MASAHIRO WATANABE.
Room temperature electroluminescence from CaF2 / Si quantum cascade structures,
The 65th The Japan Society of Applied Physics Spring Meeting,
p. 12-431,
Mar. 2018.
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Satoshi Fukuyama,
MASAHIRO WATANABE.
Evaluation of valence band offset of atomically-thin CaF2/Si heterointerface,
The 65th The Japan Society of Applied Physics Spring Meeting,
p. 12-265,
Mar. 2018.
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Hiroki Tonegawa,
MASAHIRO WATANABE.
Room Temperature Negative Differential Resistance of Si/CaF2 Triple-barrier Resonant Tunneling Diodes,
The 65th The Japan Society of Applied Physics Spring Meeting,
p. 12-195,
Mar. 2018.
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Soichiro Ono,
Waseda Cloudy,
Yusuke Saito,
Hiroki Kondo,
MASAHIRO WATANABE.
Design and analysis of Si/CaF2 near-infrared intersubband transition lasers,
The 65th The Japan Society of Applied Physics Spring Meeting,
p. 12-430,
Mar. 2018.
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