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Publication List - MASAHIRO ASADA 1999 (8 / 413 entries)
Journal Paper
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M. Tsutsui,
M. Watanabe,
M. Asada.
Resonant tunneling diodes in Si/CaF2 heterostructures grown by molecular beam epitaxy,
Jpn. J. Appl. Phys.,
Vol. 38,
No. 8B,
pp. L920-L922,
Aug. 1999.
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Y.Oguma,
N.Sashinaka,
M.Asada.
Terahertz response with gradual change from square-law detection to photon-assisted tunneling in tripple-barrier resonant tunneling diodes,
Japan.J.Appl.Phys.,
Vol. 38,
No. 7A,
pp. L717-L719,
1999.
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W.Saitoh,
A.Itoh,
S.Yamagami,
M.Asada.
Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50nm n-type devices with metal gate,
Japan.J.Appl.Phys.,
Vol. 38,
No. 11,
pp. 6226-6231,
1999.
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N.Kikegawa,
B.Zhang,
Y.Ikeda,
N.Sakai,
K.Furuya,
M.Asada,
M.Watanabe,
W.Saitoh.
Detection Time Shortening for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscope,
Japan.J.Appl.Phys.,
Vol. 38,
No. 4A,
pp. 2108-2113,
1999.
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M.Tsutsui,
M.Watanabe,
M.Asada.
Resonant tunneling diodes in Si/CaF2 heterostructures grown by molecular beam epitaxy,
Japan.J.Appl.Phys.,
Vol. 38,
No. 8B,
pp. L920-L922,
1999.
-
W.Saitoh,
S.Yamagami,
A.Itoh,
M.Asada.
35nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate,
Japan.J.Appl.Phys.,
Vol. 38,
No. 6A,
pp. L629-L631,
1999.
Domestic Conference (Not reviewed / Unknown)
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M. Tsutsui,
M. Watanabe,
M. Asada.
Fabrication and characteristics of resonant tunneling diodes with Si/CaF2 heterostructures,
The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys,
2p-ZL-9,
2,
756,
Sept. 1999.
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Y. Iketani,
M. Watanabe,
M. Asada.
Ion beam epitaxial growth of CaF2 on Si(111) 1degree substrate with controlled terrace-width,
The 60th Autumn Meeting of The Jpn. Soc. Of Appl. Phys,
1p-T-4,
1,
342,
Sept. 1999.
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