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Publication List - Takuya Hoshii 2021 (18 / 201 entries)
Journal Paper
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Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Tien-Kan Chung,
Edward Yi Chang,
Kuniyuki Kakushima.
On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films,
Japanese Journal of Applied Physics (JJAP) (SSDM特集号),
Vol. 60,
Page SBBA05,
Apr. 2021.
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Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Tien-Kan Chung,
Edward Y. Chang,
Kuniyuki Kakushima.
Publisher's Note: “Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering” [Appl. Phys. Lett. 118, 082902 (2021)],
Applied Physics Letters,
Mar. 2021.
Official location
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Jinhan Song,
Atsuhiro Ohta,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer,
Japanese Journal of Applied Physics (JJAP) (Rapid Communication),
Vol. 60,
Page 30901,
Feb. 2021.
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S-L. Tsai,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
T-K. Chung,
E. Chang,
K. Kakushima.
Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering,
Applied Physics Letters,
Vol. 118,
No. 8,
Page 82902,
Feb. 2021.
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Junji Kataoka,
Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
A possible origin of the large leakage current in ferroelectric Al1-xScxN films,
Japanese Journal of Applied Physics (JJAP) (Rapid Communication),
Vol. 60,
Page 30907,
Feb. 2021.
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Junji Kataoka,
Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation,
Applied Physics Express (APEX),
No. 2,
pp. 21002,
Jan. 2021.
International Conference (Reviewed)
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Si-Meng Chen,
Sung-Lin Tsai,
Kazuto Mizutani,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation,
International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
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Kazuto Mizutani,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
K. Kakushima.
Recovery of ferroelectric property after endurance test by positive reset voltage application for CeOx-capped ferroelectric HfO2 films,
International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
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Sho Sasaki,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
Observation of ferroelectricity in atomic layer deposited AlN film,
International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
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R. Shibukawa,
S. -L. Tsai,
T. Hoshii,
H. Wakbayashi,
K. Tsutsui,
K. Kakushima.
Thermal stability of ferroelectric AlScN films,
International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
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Mitsuki Nishizawa,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
I. Mizushima,
T. Yoda,
K. Kakushima.
Introduction of surface field-plate for accurate minority carrier lifetime estimation of 4H-SiC epitaxial layer,
International Workshop on Dielectric Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
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Takamasa Kawanago,
Takahiro Matsuzaki,
Ryosuke Kajikawa,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs,
International Conference on Solid State Devices and Materials,
Sept. 2021.
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Masahiro Watanabe,
Naoyuki Shigyo,
Takuya Hoshii,
Kazuyoshi Furukawa,
Kuniyuki Kakushima,
Katsumi Satoh,
Tomoko Matsudai,
Takuya Saraya,
Iriya Muneta,
Hitoshi Wakabayashi,
Akira Nakajima,
Shin-ichi Nishizawa,
Kazuo Tsutsui,
Toshiro Hiramoto,
Hiromichi Ohashi,
Hiroshi Iwai.
Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices,
IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021),
Proceedings of the 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021),
pp. 217-219,
Apr. 2021.
Domestic Conference (Not reviewed / Unknown)
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Yuta Komori,
Takuya Hoshii,
Kiyotaka Miyano,
Masayuki Tsukui,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Hitoshi Wakabayashi,
KAZUO TSUTSUI.
Dependence of 2DEG mobility on carrier concentration in InAlN/AlN/GaN,
第69回応用物理学会春季学術講演会,
Sept. 2021.
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Yuta Komori,
Yasuki Kimura,
Takuya Hoshii,
Kiyotaka Miyano,
Masayuki Tsukui,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
KAZUO TSUTSUI,
Hitoshi Wakabayashi,
KAZUO TSUTSUI.
Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures,
第82回応用物理学会秋季学術講演会,
Sept. 2021.
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竹内走一郎,
古賀峻丞,
田中晶貴,
孫澤旭,
橋本由介,
Takuya Hoshii,
KAZUO TSUTSUI,
松下智裕.
AsおよびBを共ドープしたSi結晶中に存在するドーパントの構造解析,
日本物理学会第76回年次大会,
Mar. 2021.
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KAZUO TSUTSUI,
Takuya Hamada,
高山 研,
Sangwoo Kim,
Takuya Hoshii,
Kuniyuki KAKUSHIMA,
Hitoshi Wakabayashi,
高橋言緒,
井手利英,
清水三聡.
選択成長法を用いたGaN 系FinFET,
電気学会電子デバイス研究会,
Mar. 2021.
Patent
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