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Publication List - Netsu Seikou 2018 (5 / 20 entries)
Journal Paper
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Seiko Netsu,
Toru Kanazawa,
Teerayut Uwanno,
Tomohiro Amemiya,
Kosuke Nagashio,
Yasuyuki Miyamoto.
Type-II HfS2/MoS2 Heterojunction Transistors,
IEICE Transactions on Electronics,
Vol. E101-C,
No. 5,
pp. 338-342,
May 2018.
Official location
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S. Netsu,
M. Hellenbrand,
C. B. Zota,
Y. Miyamoto,
E. Lind.
A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-gate MOSFETs,
IEEE Journal of the Electron Devices Society,
Vol. 6,
issue. 1,
pp. 408-412 (2018).,
Feb. 2018.
International Conference (Reviewed)
Domestic Conference (Not reviewed / Unknown)
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Wenlun Zhang,
Netsu Seikou,
Toru Kanazawa,
Tomohiro Amemiya,
YASUYUKI MIYAMOTO.
埋め込みNiバックゲートを用いたp-MoS2/HfS2トンネルFET,
第79回応用物理学会秋季学術講演会,
19a-212B-5,
Sept. 2018.
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Shinjiro Iwata,
Kazumi Ohashi,
Netsu Seikou,
Koichi Fukuda,
YASUYUKI MIYAMOTO.
GaAsSb/InGaAsヘテロ接合を用いたダブルゲートトンネルFETにおける界面準位の導入による性能の劣化,
第76回応用物理学会秋季学術講演会,
16a-1C-6,
Sept. 2018.
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