Journal Paper

• N. Kadotani, T. Ohashi, T. Takahashi, S. Oda, K. Uchida. Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors, Japanese Journal of Applied Physics, Vol. 50, pp. 094101 (7 pages), Sept. 2011.
• N. Kadotani, T. Takahashi, T. Ohashi, S. Oda, K. Uchida. Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm, Journal of Applied Physics, Vol. 110, pp. 034502. (7 pages), 2011.

Domestic Conference (Not reviewed / Unknown)

• N Kadotani, Tsunaki Takahashi, 大橋輝之, Tetsuo Kodera, SHUNRI ODA, Ken Uchida. 高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係, 第58回応用物理学関係連合講演会, Mar. 2011.

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