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TSAISung Lin 2021年 研究業績一覧 (6件 / 15件)
論文
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Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Tien-Kan Chung,
Edward Yi Chang,
Kuniyuki Kakushima.
On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films,
Japanese Journal of Applied Physics (JJAP) (SSDM特集号),
Vol. 60,
Page SBBA05,
Apr. 2021.
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S-L. Tsai,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
T-K. Chung,
E. Chang,
K. Kakushima.
Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering,
Applied Physics Letters,
Vol. 118,
No. 8,
Page 82902,
Feb. 2021.
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Junji Kataoka,
Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
A possible origin of the large leakage current in ferroelectric Al1-xScxN films,
Japanese Journal of Applied Physics (JJAP) (Rapid Communication),
Vol. 60,
Page 30907,
Feb. 2021.
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Junji Kataoka,
Sung-Lin Tsai,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
N-type conduction of sputter-deposited polycrystalline Al0.78Sc0.22N films by Si ion implantation,
Applied Physics Express (APEX),
No. 2,
pp. 21002,
Jan. 2021.
国際会議発表 (査読有り)
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Si-Meng Chen,
Sung-Lin Tsai,
Kazuto Mizutani,
Takuya Hoshii,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Kuniyuki Kakushima.
GaN HEMTs with self-upward-polarized AlScN gate dielectrics toward E-mode operation,
International Workshop on Dieectfic Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
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R. Shibukawa,
S. -L. Tsai,
T. Hoshii,
H. Wakbayashi,
K. Tsutsui,
K. Kakushima.
Thermal stability of ferroelectric AlScN films,
International Workshop on Dierectric Thin Films for Futre Electron Devices -Science and Technology-,
Nov. 2021.
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