論文

• T. Sasaki, H. Sugiyama, Y. Yoshiya, T. Hoshi, Y. Miyamoto, F. Nakajima. Impact of back-end-of-line processing on DC and RF characteristics of 60-nm-gate InP-based HEMTs for terahertz MMICs, Jpn J. Appl. Phys., vol. 65, Feb. 2026.
• Y. Miyamoto, Y. Shiratori. Proposal of composition-graded extrinsic base layers into fine emitter InP HBTs to mitigate current gain degradation, Jpn. J. Appl. Phys., vol. 64, no. 11, 11SP32, 2026.

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