論文

• 加来滋, 樋渡 功太, 吉野淳二. Scanning tunneling microscopy of strained-α-Sn(0 0 1) surface grown on InSb(0 0 1) substrate, Vol. 571, pp. 151347, Jan. 2022.
• Shigeru Kaku, Tatsuhito Ando, Junji YOSHINO. Real Space Imaging of Topological Edge States in InAs/GaSb and InAs/InxGa1–xSb Quantum Wells, ACS Nano, 13, 11, 12980, Nov. 2019.
• Daiki Nozaki, Shigeru Kaku, Junji Yoshino. Magnetic Anisotropy Constants and Anisotropic Magneto-Resistances in GaMnAs Depending on Layer Thickness, JPS Conf. Proc., Vol. 2, pp. 010302, July 2014.
• Shigeru Kaku, Jun Nakamura, Kazuma Yagyua, Junji Yoshino. Origin of symmetric STM images for the asymmetric atomic configuration on GaAs(001)–c(4 × 4)α surfaces, Surface Science, Vol. 625, pp. 84, 2014.
• Masahiro Hiraoka, Shigeru Kaku, Junji Yoshino. STM observation of MnAs initial growth surface on GaAs(001)-c(4×4) α and (6×6) reconstructions, Journal of Crystal Growth, Vol. 378, pp. 397, 2013.
• Kazuma Yagyu, Shigeru Kaku, Junji Yoshino. Symmetric–asymmetric transformation of an image on GaAs(001)-c(4 × 4)α surface using scanning tunneling microscopy, J. Vac. Sci. Technol. A, Vol. 30, pp. 061403, 2012.
• Yagyu, K., Komamiya, D., Junji YOSHINO. Initial adsorption of Cr atoms on GaAs(0 0 1), Physica E: Low-Dimensional Systems and Nanostructures, Vol. 43, No. 3, pp. 773-775, 2011.
• Miyake, Y., Nishida, N., Junji YOSHINO, Higemoto, W., Torikai, E., Shimomura, K., Ikedo, Y., Kawamura, N., Strasser, P., Makimura, S., Fujimori, H., Nakahara, K., Koda, A., Kobayashi, Y., Nishiyama, K., Kadono, R., Ogitsu, T., Makida, Y., Sasaki, K., Adachi, T., Nagamine, K.. Ultra slow muon microscopy for nano-science, Journal of Physics: Conference Series, Vol. 302, No. 1, 2011.
• Jun Okabayashi, Junji YOSHINO. Current-driven magnetization reversal at extremely low threshold current density in (Ga,Mn)As-based double-barrier magnetic tunnel junctions, Appl. Phys. Lett., AIP, Vol. 92, p. 082560, Feb. 2008.
• Jun Okabayashi, Junji YOSHINO. Temperature and bias voltage dependences of tunneling magnetoresistance in (Ga,Mn)As-based double-barrier magnetic tunnel junctions, J. Appl. Phys., Vol. 103, p. 07A908, Feb. 2008.
• M. Watanabe, H. Toyao, Jun Okabayashi, T. Yamaguchi, Junji YOSHINO. Layer-thickness dependence in tunneling magnetoresistance and current-driven magnetization reversal using GaMnAs-based double-barrier structures, Physica E, Vol. 40, p. 335, Dec. 2007.
• T. Arai, M. Suzuki, Y. Ueno, Jun Okabayashi, Junji YOSHINO. Initial growth of MnAs on GaAs(0 0 1)-c(4×4) reconstructed surface, Physica E, Elsevier, Vol. 40, p. 332, Dec. 2007.
• Jun Okabayashi, M. Watanabe, H. Toyao, T. Yamaguchi, Junji YOSHINO. Pulse-Width Dependence in Current-Driven Magnetization Reversal Using GaMnAs-Based Double-Barrier Magnetic Tunnel Junction, J. Supercond. Nov. Magn., Vol. 20, p. 443, Sept. 2007.
• T. Arai, M. Suzuki, Y. Ueno, Jun Okabayashi, Junji YOSHINO. Structure transition between two GaAs(0 0 1)-c(4×4) surface reconstructions in As4 flux, Journal of Crystal Growth, Elsevior, Vol. 301-302, p. 22, May 2007.
• M. Watanabe, H. Toyao, J. Okabayashi, J. Yoshino. Characteristics of GaMnAs-based double barrier TMR structures, phys. stat. sol. (c), Vol. 3, No. 12, pp. 4180-4183, Dec. 2006.
• H. Toyao, Y. Tanikawa, A. Suzuki, J. Yoshino. Tunneling spectroscopy of GaMnAs-based magnetic tunneling junction, Extended abstracts of the 10th symposium on the physics and application of spin-related phenomena in semiconductors (PASPS10), Yokohama, June, 2004, pp. 100-102, 2004.
• AYATO NAGASHIMA, Junji YOSHINO. Surface structure of GaAs(001)-c(4x4) studied by LEED intensity analysis, Surface Science, Vol. 564, pp. 218-224, 2004.
• A. Nagashima, T. Kawakami, A. Nishimura, J. Yoshin. Anomalous roughening of GaAs(001) during low temperature growth, Extended abstracts of 22nd electric materials symposium, pp. 153-154, 2003.
• A. Nagashima, A. Nishimura, J. Yoshino. Study on initial growth process of MnAs on GaAs(001)C(4x4) by LEED IV and STM, Extended abstracts of The 9th symposium on the physics and application of spin-related phenomena in semiconductors(PASPS9), pp. 121-122, 2003.
• A. Nagashima, M. Tazima, A. Nishimura, Y. Takagi, J. Yoshino. STM and RHEED studies on low-temperature growth of GaAs(001), Surface Science, Vol. 514, No. 1-3, pp. 350-355, 2002.
• A. Nagashima, T. Kawakami, J. Yoshino. Origin of reentrant RHEED intensity oscillation observed during MBE growth of GaAs, Extended abstract of 21st Electronic Materials Symposium, Izu-Nagaoka, pp. 155-156, 2002.
• Y. Takagi, A. Nishimura, A. Nagashima, J. Yoshino. Formation of iron silicide nanodots on Si(111)-Ag, Surface Science, Vol. 514, No. 1-3, pp. 167-171, 2002.
• M. Tazima, K. Yamamoto, D. Okazawa, A. Nagashima, J. Yoshino. Effect of Mn on the low temperature growth of GaAs and GaMnAs, Physica E, Vol. 10, No. 1-3, pp. 186-191, 2001.
• Y. Satoh, D. Okazawa, A. Nagashima, J. Yoshino. Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs, Physica E, Vol. 10, No. 1-3, pp. 196-200, 2001.
• D. Okazawa, K. Yamamoto, A. Nagashima, J. Yoshino. MBE growth and properties of 3d transition metal-doped GaAs, Physica E, Vol. 10, No. 1-3, pp. 229-232, 2001.
• M. Tajima, A. Nagashima, J. Yoshino. STM study on re-entrant behaviors observed dduring MBE growth of GaAs, 13th International conference on crystal growth, Abstracts, 03a-K31-11, pp. 206, 2001.
• T. Honda, K. Hara, J. Yoshino, H. Kukimoto. CuGaS_2-based light emitting diode grown by MOVPE, 13th International conference on crystal growth, Abstracts, 03a-K31-11, pp. 383, 2001.
• M. Tajima, A. Nagashima, J. Yoshino. STM studies on reentrant RHEED oscillation observed during low temperature MBE growth of GaAs, 20th Electronic materials symposium , Extended abstracts, pp. 127-128, 2001.
• K. Yamamoto, A. Nagashima, J. Yoshino. MBE growth of (Ga,Mn)As with high Mn-content, 20th Electronic materials symposium , Extended abstracts, pp. 111-112, 2001.
• A. Nagashima, M. Tajima, J. Yoshino. Study on mechanism of re-entrant RHEED oscillation observed during LT-MBE growth of GaAs, 28th International symposium on compound semiconductors, MoP22, Abstracts, pp. 34, 2001.
• J. Yoshino. III-V based diluted magnetic semiconductors -Promising properties and future prospects-, Japanese research review for pioneering “Ternaly and multinary compounds in the 21 century”, IPAP book 1, pp. 312-317, 2001.
• T. Honda, K. Hara, J. Yoshino, H. Kukimoto. Growth of CuGaS₂ based chalcopyrite compounds and their heterostructure by MOVPE, Japanese research review for pioneering “Ternaly and multinary compounds in the 21 century”, IPAP book 1, pp. 98-101, 2001.
• AYATO NAGASHIMA, J. Yoshino. Structural analysis of GaAs(001)-c(4x4) with LEED IV technique, Surface Science, Vol. 493, No. 1-3, pp. 227-231, 2001.
• A. Nagashima, M. Tajima, J. Yoshino. Surface structure analysis of GaAs (100)-c(4x4) by LEED IV technique, Records of 19th Electronic Materials Symposium, Izu-Nagaoka, pp. 69-70, 2000.
• D. Okazawa, K. Yamamoto, A.　Nagashima, J. Yoshino. MBE growth and properties of Cr, Fe, and Co-doped GaAs, Abstract of The international conference on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai, pp. 46-47, 2000.
• Y. Satoh, D. Okazawa, A. Nagashima, J. Yoshino. Carrier concentration dependence of electronic and magnetic properties of Sn-doped GaMnAs, Abstract of The international conference on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai, pp. 33-34, 2000.
• M. Tajima, K. Yamamoto, D. Okazawa, A. Nagashima, J. Yoshino. STM study on low temperature MBE grown GaAs and GaMnAs surfaces, Records of 19th Electronic Materials Symposium, Izu-Nagaoka, pp. 75-76, 2000.
• M. Tajima, K. Yamamoto, D. Okazawa, A. Nagashima, J. Yoshino. Effect of Mn on the low temperature growth of GaAs and GaMnAs, Abstract of The international conference on the Physics and Application of Spin-related Phenomena in Semiconductors, Sendai, pp. 29-30, 2000.
• A. Nagashima, T. Kimura, A. Nishimura, J. Yoshino. Initial nitrization of the CoSi₂(111)/Si(111) surface, Surface Science, Vol. 433-435, pp. 529-533, 1999.
• J. Yoshino, M. Odahara, D. Okazawa, A. Nagashima. Magneto-transport properties of Sn-doped p-type (Ga,Mn)As, Records of 17th Electronic Materials Symposium, Kii-Shirahama, pp. 15-16, 1999.
• A. Nagashima, T. Kimura, A. Nishimura, J. Yoshino. Comparative studies on the surface structures of NiSi₂ and epitaxially formed on Si (111), Surface Science, Vol. 441, pp. 158, 1999.
• A. Nagashima, T. Kimura, J. Yoshino. Formation of an ordered surface compound consisting of Ag, Si, and H on Si(001), Applied Surface Science, Vol. 130-132, pp. 248-253, 1998.
• J. Yoshino, Y. Satoh, M. Odahara, D. Okazawa, A. Nagashima. Epitaxial Growth of (Ga,Fe)As by Molecular Beam Epitaxy, Extended Abstracts of 4th Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors, Sendai, pp. 76-77, 1998.
• J. Yoshino, Y. Satoh, M. Odahara, D. Okazawa, A. Nagashima. Studies on low temperature MBE growth of iron doped GaAs and its magnetic properties, Extended abstracts of 4th Symposium on the physics and application of spin-related phenomena in semiconductors, Sendai, pp. 74-75, 1998.
• Y. Satoh, N. Inoue, J. Yoshino. Electronic and Magnetic Properties of n-Type Ga_1-xMn_xAs, Record of the 17th Electronic Materials Symposium, Izu-Nagaoka, pp. 187-188, 1998.
• J. Yoshino. Electronic and Magnetic Properties of GaMnAs, Symposium records of Japan-Polish symposium on diluted magnetic semiconductors, Warsaw, 1997, pp. 69-72, 1997.
• Y. Satoh, Y. Nishikawa, J. Yoshino. Ferromagnetic exchange interaction in Ga_1-xMn_xAs, Record of the 16th Electronic Materials Symposium, Osaka, pp. 47-48, 1997.
• J. Yoshino. Theoretical estimation of thermoelectric figure of merit in sintered materials and proposal of grain-sizegraded structures, Proceedings of 4th International conference on Functionally graded materials, Ed. by I. Shiota and Y. Miyamoto, Elsevior Sci. BV, pp. 495-500, 1997.
• Y. Satoh, N. Inoue, Y. Nishikawa, J. Yoshino. Systematic studies on carrier concentration dependence of Curie-Weiss temperature on GaMnAs, Extended Abstracts of 3rd Symposium on the Physics and Application of Spin-Related Phenomena in Semiconductors, Sendai, pp. 23-26, 1997.
• K. Hara, H. Machimura, M. Usui, H. Munekata, H., Kukimoto, J. Yoshino. Gas-source molecular beam epitaxy of wide-band-gap Zn_1-x Hg_x Se(x=0-0.14), Applied Physics Letters, Vol. 66, No. 24, pp. 3337-3339, 1995.
• K. Hayashi, K. Hara, J. Yoshino, H. Kukimoto. Surface reactions in photoassisted MOVPE growth of ZnSe as studied by in-situ optical refrection measurements, Applied Surface Science, Vol. 79-80, pp. 434-438, 1994.

著書

• 青柳克信, 南不二雄, 吉野淳二, 梶川浩太郎. 先端材料光物性, コロナ社, Feb. 2008.
• 梶川武信, 西田勲夫, 木村靖忠, 篠原嘉一, 松原覚衛, 山田作太郎, 山梨正孝, 吉野 淳二, 吉原一紘. 熱電変換, 裳華房, Feb. 2005.

国際会議発表 (査読有り)

• Masahiro Hiraoka, Shigeru Kaku, Junji Yoshino. STM observation of initial growth surface of MnAs on GaAs(001), The 17th International Conference on Molecular Beam Epitaxy, 2016.
• Tatsuhito Ando, Shigeru Kaku, Masayuki Tsukui, Junji Yoshino. X-STM observation on (110) surface of AlSb/InAs/GaSb/AlSb hetero-structure, EP2DS-21/MSS-17, MSS-17 Abstracts, July 2015.
• KAZUHIKO HARA, hiroshi kukimoto, J. Yoshino. Optical properties of AlP-GaP short-period superlattices, Solid-State Electronics, Vol. 37, No. 4-6, pp. 349-652, 1994.

国際会議発表 (査読なし・不明)

• Marques-Gonzalez, S. Fujii, M. Kiguchi, J-Y. Shin, H. Shinokubo. An anti-aromaticapproach to enhanced molecular charge-transport, ECOSS31, 2015.
• T. Arai, M. Suzuki, Y. Ueno, J. Okabayashi, J. Yoshino. Structure transition between two GaAs (001) c(4x4) surface reconstructions under As4 flux, The 14th International Conference on Molecular Beam Epitaxy, Abstract workbook of The 14th International Conference on Molecular Beam Epitaxy, pp. 291, Sept. 2006.
• M. Suzuki, T. Arai, Y. Oueno, J. Okabayashi, J. Yoshino. Study on initial growth surface of MnAs on two different GaAs(001) c(4x4) reconstructions, The 14th International Conference on Molecular Beam Epitaxy, Abstract workbook of The 14th International Conference on Molecular Beam Epitaxy, pp. 141, Sept. 2006.
• H. Toyao, Y. Tanikawa, M. Watanabe, J. Yoshino. Current-driven magnetic-orientation reversal achieved in GaMnAs-based double barrier TMR structures at extremely low-threshold current density, The 4th International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors, Abstracts of The 4th International Conference on Physics and Application of Spin-Related Phenomena in Semiconductors, pp. 69, Aug. 2006.

国内会議発表 (査読なし・不明)

• 安藤 達人, 加来 滋, 吉野 淳二. 2次元トポロジカル絶縁体AlSb/InAs/GaSb/AlSbヘテロ構造の断面STM/STS観測, 第63回応用物理学会春季学術講演会, 第63回応用物理学会春季学術講演会公演予稿集, Mar. 2016.
• 荒川 和哉, 武富 優綺, 加来 滋, 吉野 淳二. Ga1-xMnxAsの巨大熱電能の起源の解明, 第63回応用物理学会春季学術講演会, 第63回応用物理学会春季学術講演会講演予稿集, Mar. 2016.
• 武富 優綺, 加来 滋, 吉野 淳二. MnドープInAs-GaSb超格子の熱電特性, 第63回応用物理学会春季学術講演会, 第63回応用物理学会春季学術講演会講演予稿集, Mar. 2016.
• 荒川 和哉, 武富優綺, 加来 滋, 吉野 淳二. Large thermoelectric power of GaMnAs, 34th Electronic Materials Symposium(EMS-34), 34th Electronic Materials Symposium(EMS-34) Extendex abstracts, pp. 151-152, July 2015.
• 武富 優綺, 荒川 和哉, 山上 順也, 加来 滋, 吉野 淳二. Thermoelectric measurement of GaSb/InAs/AlSb superlattices, 34th Electronic Materials Symposium(EMS-34), 34th Electronic Materials Symposium(EMS-34) Extended abstracts, pp. 153-154, July 2015.
• Shigeru Kaku, Masayuki Tsukui, Tatsuhito Ando, Junji Yoshino. X-STM measurements of band bending across GaAs/AlAs heterojunction, EP2DS-21/MSS-17, MSS-17 Abstracts, July 2015.
• M. Watanabe, H. Toyao, J. Okabayashi, J. Yoshino. Current-driven magnetization reversal in GaMnAs-based magnetic tunneling junctions: Comparison between single and double barrier structures, The 11th Symposium on Physics and Application of Spin-Related Phenomena in Semiconductors, Abstracts of The 11th Symposium on Physics and Application of Spin-Related Phenomena in Semiconductors, pp. 9-10, Dec. 2006.

学位論文

• 可視光半導体レーザー用III-V族化合物混晶に関する研究,  本文,  工学博士,  東京工業大学,  1982/03/26,   

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]