論文

• Feifan Han, Kobayashi Kazunori, Safumi Suzuki, Tanaka Hiroki, Hironari Fujikata, MASAHIRO ASADA. Impedance matching in high-power resonant-tunneling-diode terahertz oscillators integrated with rectangular-cavity resonator, Mar. 2021.
• Yu Tokizane, Hikaru Ejiri, Takeo Minamikawa, Safumi Suzuki, Masahiro Asada, Takeshi Yasui. Hybrid optical imaging with three largely-wavelength-different lights in near-infrared, mid-infrared, and terahertz regions for non-destructive inspection, Feb. 2021.
• Masahiro Asada, Safumi Suzuki. Terahertz Emitter Using Resonant-Tunneling Diode and Applications (Review), Feb. 2021.
• Adrian Dobroiu, Yusuke Shirakawa, Safumi Suzuki, Masahiro Asada, Hiroshi Ito. Subcarrier frequency-modulated continuous-wave radar in the terahertz range based on a resonant-tunneling-diode oscillator, Nov. 2020.
• Ta Van Mai, Yusei Suzuki, Xiongbin Yu, Safumi Suzuki, MASAHIRO ASADA. Structure-simplied resonant-tunneling-diode terahertz oscillator without metal-insulator-metal capacitors, Journal of Infrared Millimeterwave and Terahertz Waves, Aug. 2020.
• Yuma Takita, Safumi Suzuki, MASAHIRO ASADA, Hiroaki Minamide. Sensitive terahertz-wave detector responses originated by negative differential conductance of resonant-tunneling-diode oscillator, Applied Physics Letters, July 2020.
• Adrian Dbroiu, Ryouta Wakasugi, Yusuke Shirakawa, Safumi Suzuki, MASAHIRO ASADA. Amplitude-modulated continuous-wave radar in the terahertz range using lock-in phase measurement, Measurement Science Technology, July 2020.
• Kazunori Kobayashi, Safumi Suzuki, Feifan Han, Hiroki Tanaka, Hidenari Fujikata, MASAHIRO ASADA. Analysis of a high-power resonant-tunneling-diode terahertz oscillator integrated with a rectangular cavity resonator, May 2020.
• Bezhko Mikhail, Safumi Suzuki, MASAHIRO ASADA. Frequency increase in resonant-tunneling diode cavity-type terahertz oscillator by simulation-based optimization, Mar. 2020.
• Kahled Arzi, Safumi Suzuki, Andreas Rennings, Daniel Erni, Nils Weimann, MASAHIRO ASADA, Werner Prost. Subharmonic injection locking for phase and frequency control of RTD-based THz oscillator, Mar. 2020.
• MASAHIRO ASADA. Sub-harmonic injecion locking for phase and frequency control of RTD-based THz oscillator, Mar. 2020.
• R. Izumi, T. Sato, S. Suzuki, and M. Asada. Resonent-tunneling-diode terahertz oscillator with a cylindrical cavity for high frequency oscillation, Aug. 2019.
• 浅田雅洋、鈴木左文、アドリアン ドブロユ、田中大基. 共鳴トンネルダイオードを用いたテラヘルツ光源, July 2019.
• K. Kasagi, S. Suzuki, and M. Asada. Large-scale array of resonant-tunneling-diode terahertz oscillators for high output power at 1 THz, May 2019.
• H. Matsumoto, S. Suzuki, M. Asada, and Y. Monnai. Waveguide coupler for resonant-tunnelling diode oscillator at 420 GHz, Feb. 2019.
• A.Dobroiu, R. Wkasugi, Y. Shirakawa, S. Suzuki, and M. Asada. Absolute and Precise Terahertz-Wave Radar Based on an Amplitude-Modulated Resonant-Tunneling-Diode Oscillator, Oct. 2018.
• DAISUKE HORIKAWA, YUN CHEN, TAKUYA KOIKE, SAFUMI SUZUKI, MASAHIRO ASADA. Resonant-tunneling-diode terahertz oscillator integrated with a radial line slot antenna for circularly polarized wave radiation, Aug. 2018.
• K. Ogino, S. Suzuki, M. Asada. Phase Locking and Frequency Tuning of Resonant-Tunneling-Diode Terahertz Oscillators, Mar. 2018.
• 浅田 雅洋, 鈴木 左文. テラヘルツ帯発振を可能にする共鳴トンネルダイオードの構造と物理, Dec. 2017.
• M. Asada, S. Suzuki, T. Fukuma. Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators, Oct. 2017.
• K. Ogino, S. Suzuki, M. Asada. Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop, Oct. 2017.
• N. Oshima, K. Hashimoto, S. Suzuki, M. Asada. Terahertz Wireless Data Transmission With Frequency and Polarization Division Multiplexing Using Resonant-Tunneling-Diode Oscillators, July 2017.
• S. Kitagawa, M. Mizuno, S. Saito, K. Ogino, S. Suzuki, M..Asada. Frequency-tunable resonant-tunneling-diode terahertz oscillators applied to absorbance measurement, May 2017.
• Kitagawa, Seiichirou, Ogino, Kota, Safumi Suzuki, MASAHIRO ASADA. Wide frequency tuning in resonant-tunneling-diode terahertz oscillator using forward-biased varactor diode, JAPANESE JOURNAL OF APPLIED PHYSICS, IOP PUBLISHING LTD, Vol. 56, No. 4, Apr. 2017.
• Y. Takida, K. Nawata, S. Suzuki, M. Asada, H. Minamide. Terahertz-wave differential detection based on simultaneous dual-wavelength up-conversion, Apr. 2017.
• Safumi Suzuki, MASAHIRO ASADA. Terahertz communications using resonant-tunneling-diode oscillators, 2017 11th European Conference on Antennas and Propagation, EUCAP 2017, pp. 1615-1617, 2017.
• Dal Bosco, A.K., Safumi Suzuki, MASAHIRO ASADA, Minamide, H.. Super-harmonic oscillations in a resonant tunneling diode with optical feedback, Optics InfoBase Conference Papers, Vol. Part F54-NLO 2017, 2017.
• Takida, Y., Nawata, K., Safumi Suzuki, MASAHIRO ASADA, Minamide, H.. Nonlinear optical detection of terahertz-wave radiation from resonant tunneling diodes, Optics Express, Vol. 25, No. 5, pp. 5389-5396, 2017.
• Murano, K., Watanabe, I., Kasamatsu, A., Safumi Suzuki, MASAHIRO ASADA, Withayachumnankul, W., Tanaka, T., Monnai, Y.. Low-Profile Terahertz Radar Based on Broadband Leaky-Wave Beam Steering, IEEE Transactions on Terahertz Science and Technology, Vol. 7, No. 1, pp. 60-69, 2017.
• M Asada, S Suzuki. Room-Temperature Oscillation of Resonant Tunneling Diodes close to 2 THz and Their Functions for Various Applications, Journal of Infrared, Millimeter, and Terahertz Waves, vol. 37, no. 12, pp. 1185-1198, Dec. 2016.
• N Oshima, K Hashimoto, S Suzuki, M Asada. Wireless data transmission of 34 Gbit/s at a 500-GHz range using resonant-tunnelling-diode terahertz oscillator, Electronics Letters, vol. 52, no. 22, pp. 1897-1898, Oct. 2016.
• S. Kitagawa, S. Suzuki, M. Asada. Wide frequency-tunable resonant tunneling terahertz oscillators using varactor diodes, Electron. Lett., vol. 52, no. 6, pp. 479-481, Mar. 2016.
• S. Suzuki, T. Nukariya, Y. Ueda, T. Otsuka, M. Asada. High Current Responsivity and Wide Modulation Bandwidth Terahertz Detector Using High-Electron-Mobility Transistor for Wireless Communication, J Infrared Millimeter and Terahz Waves, vol. 37, pp. 658-667, Mar. 2016.
• T. Maekawa, H. Kanaya, S. Suzuki, M. Asada. Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss, Appl. Phys. Express, vol. 9, p. 024101, Jan. 2016.
• Horikawa, D., Safumi Suzuki, MASAHIRO ASADA. Resonant-tunneling-diode terahertz oscillator integrated with radial line slot antenna for circularly polarized wave radiation, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Vol. 2016-November, 2016.
• MASAHIRO ASADA, Safumi Suzuki. Terahertz oscillators using resonant tunneling diodes and their functions for various applications, Proceedings of SPIE - The International Society for Optical Engineering, Vol. 9856, 2016.
• Oshima, N., Hashimoto, K., Horikawa, D., Safumi Suzuki, MASAHIRO ASADA. Wireless data transmission of 30 Gbps at a 500-GHz range using resonant-tunneling-diode terahertz oscillator, IEEE MTT-S International Microwave Symposium Digest, Vol. 2016-August, 2016.
• Kasagi, K., Fukuma, S., Safumi Suzuki, MASAHIRO ASADA. Proposal and fabrication of dipole array antenna structure in resonant-tunneling-diode terahertz oscillator array, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Vol. 2016-November, 2016.
• MASAHIRO ASADA, Safumi Suzuki. Room-temperature resonant-tunneling-diode terahertz oscillators, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Vol. 2016-November, 2016.
• Maekawa, T., Kanaya, H., Safumi Suzuki, MASAHIRO ASADA. Frequency increase in resonant-tunneling-diode terahertz oscillator by reduction in conduction loss with thick antenna electrode, 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, 2016.
• Murano, K., Watanabe, I., Kasamatsu, A., Safumi Suzuki, MASAHIRO ASADA, Withayachumnankul, W., Tanaka, T., Monnai, Y.. Demonstration of short-range terahertz radar using high-gain leaky-wave antenna, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, Vol. 2016-November, 2016.
• K. Kasagi, N. Oshima, S. Suzuki, M. Asada. Power Combination in 1 THz Resonant-Tunneling-Diode Oscillators Integrated with Patch Antennas, IEICE Trans. Electron., vol. E98-C, no. 12, pp. 1131-1133, Dec. 2015.
• H. Kanaya, T. Maekawa, S. Suzuki, M. Asada. Structure dependence of oscillation characteristics of resonant-tunneling-diode terahertz oscillators associated with intrinsic and extrinsic delay times, Jpn. J. Appl. Phys., vol. 54, p. 094103, Aug. 2015.
• K. Okada, K. Kasagi, N. Oshima, S. Suzuki, M. Asada. Resonant-Tunneling-Diode Terahertz Oscillator Using Patch Antenna Integrated on Slot Resonator for Power Radiation, IEEE Trans. THz Sci. Technol., vol. 5, no. 4, pp. 613-618, July 2015.
• M. Asada, S. Suzuki. Theoretical analysis of external feedback effect on oscillation characteristics of resonant-tunneling-diode terahertz oscillators, Jpn. J. Appl. Phys., vol. 54, p. 070309, June 2015.
• Y. Ikeda, S. Kitagawa, K. Okada, S. Suzuki, M. Asada. Direct intensity modulation of resonant-tunneling-diode terahertz oscillator up to ~30 GHz, IEICE Electron. Express, vol. 12, no. 3, p. 20141161, Feb. 2015.
• Ueda, Y., Nukariya, T., Safumi Suzuki, MASAHIRO ASADA. Bandwidth measurement of terahertz detector using high electron mobility transistor by heterodyne mixing, IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves, 2015.
• Kasagi, K., Safumi Suzuki, MASAHIRO ASADA. Array configuration using resonant-tunneling-diode terahertz oscillator integrated with patch antenna, IRMMW-THz 2015 - 40th International Conference on Infrared, Millimeter, and Terahertz Waves, 2015.
• Safumi Suzuki, MASAHIRO ASADA. Terahertz oscillators and receivers using electron devices for high-capacity wireless communication, Proceedings of SPIE - The International Society for Optical Engineering, Vol. 9483, 2015.
• 淺田雅洋, 鈴木左文. 共鳴トンネルダイオードによる室温小型テラヘルツ光源, OPTRONICS, no. 9, pp. 70-73, 2015.
• S. Kitagawa, S. Suzuki, M. Asada. 650-GHz Resonant-Tunneling-Diode VCO with Wide Tuning Range Using Varactor Diode, IEEE Electron Dev. Lett., vol. 35, no. 12, pp. 1215-1217, Dec. 2014.
• T. Maekawa, H. Kanaya, S. Suzuki, M. Asada. Frequency increase in terahertz oscillation of resonant tunnelling diode up to 1.55 THz by reduced slot-antenna length, Electron. Lett., vol. 50, no. 17, pp. 1214-1216, Aug. 2014.
• M. Feiginov, H. Kanaya, S. Suzuki, M. Asada. Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz, Appl. Phys. Lett., vol. 104, no. 24, p. 243509, July 2014.
• S. Kitagawa, S. Suzuki, M. Asada. Wide-Range Varactor-Tuned Terahertz Oscillator Using Resonant Tunneling Diode, J. Infrared, Millimeter and Terahertz Waves, vol. 35, pp. 445-450, Mar. 2014.
• H. Sugiyama, A. Teranishi, S. Suzuki, M. Asada. Structural and electrical transport properties of MOVPE-grown pseudomorphic AlAs/InGaAs/InAs resonant tunneling diodes on InP substrates, Jpn. J. Appl. Phys., vol. 53, p. 031202, Feb. 2014.
• H. Kanaya, R. Sogabe, T. Maekawa, S. Suzuki, M. Asada. Fundamental Oscillation up to 1.42 THz in Resonant Tunneling Diodes by Optimized Collector Spacer Thickness, J. Infrared, Millimeter and Terahertz Waves, vol. 35, pp. 425-431, Feb. 2014.
• Okada, K., Safumi Suzuki, MASAHIRO ASADA. Resonant-tunneling-diodeterahertz oscillator integrated with slot-coupled patch antenna, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2014.
• Feiginov, M., Kanaya, H., Safumi Suzuki, MASAHIRO ASADA. 1.46 THz RTD oscillators with strong back injection from collector, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2014.
• Kanaya, H., Sogabe, R., Maekawa, T., Safumi Suzuki, MASAHIRO ASADA. Frequency increase in resonant-tunneling-diode terahertz oscillators using optimum collector spacer, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2014.
• Ikeda, Y., Okada, K., Kitagawa, S., Safumi Suzuki, MASAHIRO ASADA. Resonant-tunneling-diode oscillator with high-frequency modulation structure for high-capacity terahertz communication, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2014.
• M. Asada, H. Kanaya, S. Suzuki. Terahertz Emission from Resonant Tunneling Diodes without Satisfying Oscillation Condition, Jpn. J. Appl. Phys., vol. 52, p. 100210, Sept. 2013.
• H. Kanaya, S. Suzuki, M. Asada. Terahertz Oscillation of Resonant Tunneling Diodes with Deep and Thin Quantum Wells, Electron. Express, vol. 10, pp. 1-7, Aug. 2013.
• S. Suzuki, M. Shiraishi, H. Shibayama, M. Asada. High-Power Operation of Terahertz Oscillators with Resonant Tunneling Diodes Using Impedance-Matched Antennas and Array Configuration, IEEE J. Selected Topics Quantum Electron., vol. 19, no. 1, p. 8500108, Feb. 2013.
• MASAHIRO ASADA, Safumi Suzuki. Room-temperature terahertz oscillation of resonant tunneling diodes, Proceedings of SPIE - The International Society for Optical Engineering, Vol. 8846, 2013.
• MASAHIRO ASADA, Safumi Suzuki. Resonant tunneling diodes for room-temperature terahertz oscillators, Asia-Pacific Microwave Conference Proceedings, APMC, pp. 345-347, 2013.
• Sogabe, R., Shizuno, K., Kanaya, H., Safumi Suzuki, MASAHIRO ASADA, Sugiyama, H., Yokoyama, H.. Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2013.
• MASAHIRO ASADA, Safumi Suzuki. Compact THz oscillators with resonant tunneling diodes and application to high-capacity wireless communications, ICECom 2013 - Conference Proceedings: 21st International Conference on Applied Electromagnetics and Communications, 2013.
• Minoguchi, K., Okada, K., Safumi Suzuki, MASAHIRO ASADA. Proposal and fabrication of resonant-tunneling-diode terahertz oscillator with structure for high frequency modulation, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2013.
• H. Kanaya, H. Shibayama, R. Sogabe, S. Suzuki, M. Asada. Fundamental Oscillation up to 1.31 THz in Resonant Tunneling Diodes with Thin Well and Barriers, Appl. Phys. Express, vol. 5, no. 12, p. 124101, Dec. 2012.
• 鈴木左文, 鏑木新治, 金谷英敏, 浅田雅洋. 共鳴トンネルダイオードのテラヘルツ発振とレーザー光照射による出力の変調, レーザー研究, vol. 40, no. 7, p. 517-522, July 2012.
• K. Ishigaki, M. Shiraishi, S. Suzuki, M. Asada, N. Nishiyama, S. Arai. Direct intensity modulation and wireless data transmission characteristics of terahertz-oscillating resonant tunnelling diodes, Electron. Lett., vol. 48, no. 10, pp. 582-583, May 2012.
• H. Shibayama, S. Suzuki, M. Shiraishi, M. Asada. Dependence of Output Power on Slot Antenna Width in Terahertz Oscillating Resonant Tunneling Diodes, J. Infrared Milli. Terahz. Waves, vol. 33, no. 5, pp. 475-478, May 2012.
• A. Teranishi, S. Suzuki, K. Shizuno, M. Asada, H. Sugiyama, H. Yokoyama. Estimation of Transit time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers, Trans. Electron. IEICE of Japan, vol. E95-C, no. 3, pp. 401-407, Mar. 2012.
• A. Teranishi, K. Shizuno, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama. Fundamental Oscillation up to 1.08 THz in Resonant Tunneling Diodes with High-Indium Composition Transit Layers for Reduction of Transit Delay, IEICE Electron. Express, vol. 9, no. 5, pp. 385-390, Mar. 2012.
• Kanaya, H., Shibayama, H., Safumi Suzuki, MASAHIRO ASADA. Fundamental oscillation up to 1.31 THz in thin-well resonant tunneling diodes, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 106-109, 2012.
• Shiraishi, M., Suzuki, S., MASAHIRO ASADA. High-power operation of terahertz oscillators with resonant tunneling diodes using offset-fed slot antennas and array configuration, International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2012.
• H. Sugiyama, A. Teranishi, S. Suzuki, M. Asada. High Uniformity InP-Based Resonant Tunneling Diode Wafers with Peak Current Density of over 6×10⁵ A/cm² Grown by Metal-Organic Vapor-Phase Epitaxy, J. Crystal Growth, vol. 336, pp. 24-28, Sept. 2011.
• S. Suzuki, K. Karashima, K. Ishigaki, M. Asada. Heterodyne Mixing of Sub-Terahertz Output Power from Two Resonant Tunneling Diodes Using InP Schottky Barrier Diode, Jpn. J. Appl. Phys., vol. 50, p. 080211, Aug. 2011.
• H. Sugiyama, S. Suzuki, M. Asada. Room-Temperature Resonant Tunneling Diode Terahertz Oscillator Based on Precisely Controlled Semiconductor Epitaxial Growth Technology, NTT Technical Review, vol. 9, no. 10, pp. 12-17, July 2011.
• M. Asada, S. Suzuki. Terahertz Oscillators Using Electron Devices - an Approach with Resonant Tunneling Diodes, IEICE Electron. Express, vol. 8, no. 14, pp. 1110-1126, July 2011.
• M. Shiraishi, H. Shibayama, K. Ishigaki, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama. High Output Power (~400 μW) Oscillators at around 550GHz Using Resonant Tunneling Diodes with Graded Emitter and Thin Barriers, Appl. Phys. Express, vol. 4, p. 064101, May 2011.
• 浅田雅洋, 鈴木左文. 電子デバイスによるテラヘルツ光源, 電気学会論文誌Ａ（基礎・材料共通）, vol. 131-A, pp. 21-25, Jan. 2011.
• Kaburaki, S., Safumi Suzuki, MASAHIRO ASADA. Intensity modulation of sub-terahertz oscillating resonant tunneling diode by irradiation of 1.55-μm laser, IEEE Photonic Society 24th Annual Meeting, PHO 2011, pp. 821-822, 2011.
• Teranishi, A., Shizuno, K., Suzuki, S., MASAHIRO ASADA, Sugiyama, H., Yokoyama, H.. Fundamental oscillation up to 1.08 THz in resonant tunneling diodes with high indium composition transit layers, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2011.
• Ishigaki, K., Karashima, K., Shiraishi, M., Shibayama, H., Safumi Suzuki, MASAHIRO ASADA. Direct modulation of THz-oscillating resonant tunneling diodes, IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves, 2011.
• Shiraishi, M., Shibayama, H., Ishigaki, K., Suzuki, S., MASAHIRO ASADA, Sugiyama, H., Yokoyama, H.. High output power (∼400 μW) oscillators at around 550 GHz using large area RTD and optimized antenna structure, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 2011.
• S. Suzuki, M. Asada, A. Teranishi, H. Sugiyama, H. Yokoyama. Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature, Appl. Phys. Lett., Vol. 97, p. 242102, Dec. 2010.
• MASAHIRO ASADA. Theoretical analysis of spectral linewidth of terahertz oscillators using resonant tunneling diodes and their coupled arrays, Journal of Applied Physics, vol. 108, 034504, Aug. 2010.
• S. Suzuki, K. Sawada, A. Teranishi, M. Asada, H. Sugiyama, H. Yokoyama. Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doping structures, Electron. Lett., vol. 46, pp. 1006-1007, July 2010.
• K. Hinata, M. Shiraishi, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama. Sub-Terahertz Resonant Tunneling Diode Oscillators with High Output Power (~200μW) Using Offset-Fed Slot Antenna and High Current Density, Applied Physics Express, vol. 3, 014001, Jan. 2010.
• MASAHIRO ASADA, Safumi Suzuki. THz oscillators using resonant tunneling diodes at room temperature, IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide, 2010.
• Karashima, K., Shiraishi, M., Hinata, K., Safumi Suzuki, MASAHIRO ASADA. Heterodyne detection of output of sub-THz RTD oscillator using InP-SBD detector and RTD local oscillator, IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide, 2010.
• K. Karashima, R. Yokoyama, M. Shiraishi, S. Suzuki, S. Aoki, M. Asada. Measurement of Oscillation Frequency and Spectral Linewidth of Sub-Terahertz InP-Based Resonant Tunneling Diode Oscillators Using Ni–InP Schottky Barrier Diode, Jpn. J. Appl. Phys., vol. 49, p. 020208, 2010.
• M. Shiraishi, S. Suzuki, A. Teranishi, M. Asada, H. Sugiyama, H. Yokoyama. Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas, Jpn. J. Appl. Phys., vol. 49, p. 020211, 2010.
• MASAHIRO ASADA, Safumi Suzuki. THz oscillators using resonant tunneling diodes, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1331-1334, 2010.
• Safumi Suzuki, Hinata, K., Shiraishi, M., MASAHIRO ASADA, Sugiyama, H., Yokoyama, H.. RTD oscillators at 430-460 GHz with high output power (∼200 μW) using integrated offset slot antennas, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 152-155, 2010.
• H. Sugiyama, H. Yokoyama, A. Teranishi, S. Suzuki, M. Asada. Extremely High Peak Current Densities of over 1×10⁶ A/cm² in InP-Based InGaAs/AlAs Resonant Tunneling Diodes Grown by Metal–Organic Vapor-Phase Epitaxy, Jpn. J. Appl. Phys., vol. 49, p. 051201, 2010.
• Safumi Suzuki, Teranishi, A., MASAHIRO ASADA, Sugiyama, H., Yokoyama, H.. Increase of fundamental oscillation frequency in resonant tunneling diode with thin barrier and graded emitter structures, IRMMW-THz 2010 - 35th International Conference on Infrared, Millimeter, and Terahertz Waves, Conference Guide, 2010.
• Mizuki Shirao, Yuki Numajiri, Ryo Yokoyama, Nobuhiko Nishiyama, Masahiro Asada, Shigehisa Arai. Preliminary Experiment for Direct Media Conversion to Sub-Terahertz Wave Signal from 1.55-μm Optical Signal Using Photon-generated Free Carriers, Japanese Journal of Applied Physics, vol. 48, no. 9, pp. 090203-1-3, Sept. 2009.
• K. Urayama, S. Aoki, S. Suzuki, MASAHIRO ASADA, H. Sugiyama, H. Yokoyama. Sub- Terahertz resonant Tunneling Diode Oscillators Integrated with tapered Slot Antennas for Horizontal Radiation, Applied Physics Express, vol. 2, 044501, May 2009.
• Safumi Suzuki, Atsushi Teranishi, Kensuke Hinata, Masahiro Asada, Hiroki Sugiyama, Haruki Yokoyama. Fundamental Oscillation of up to 831 GHz in GaInAs/AlAs Resonant Tunneling Diode, Applied Physics Express, Vol. 2, p. 054501, Apr. 2009.
• S. Suzuki, K. Urayama, M. Asada. Coherent Power Combination in Multi-Element Sub-Terahertz Resonant Tunneling Diode Oscillators Coupled with Metal-Insulator-Metal Stub Structure, Applied Phys. Express, vol. 1, 093001, Sept. 2008.
• M. Asada, S. Suzuki. Theoretical Analysis of Coupled Oscillator Array Using Resonant Tunneling Diodes in Subterahertz and Terahertz Range, J. Appl. Phys., vol. 103, p. 124514, 2008.
• S. Suzuki, N. Kishimoto, M. Asada, N. Sekine, I. Hosako. Experiment and theory of the dependence of oscillation characteristics on structure of integrated slot antennas in sub-THz and THz oscillating resonant tunneling diodes, Jpn. J. Appl. Phys., vol. 47, pp. 64-67, 2008.
• M. Asada, S. Suzuki, N. Kishimoto. Resonant Tunneling Diodes for Sub-Terahertz and Terahertz Oscillators, Jpn. J. Appl. Phys., vol. 47, pp. 4375-4384, 2008.
• N. Kishimoto, S. Suzuki, A. Teranishi, M. Asada. Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers, Applied Phys. Express, vol. 1, p. 042003, 2008.
• T. Kanazawa, A. Morosawa, R. Fuji, T. Wada, M. Watanabe, M. Asada. Suppression of Leakage Current of CdF₂/CaF₂ Resonant Tunneling Diode Structures Grown on Si(100) Substrates by Nanoarea Local Epitaxy, Jpn. J. Appl. Phys., Vol. 46, No. 6A, pp. 3388-3390, June 2007.
• T. Kanazawa, M. Watanabe, M. Asada. Room temperature negative differential resistance of CdF₂/CaF₂ double-barrier resonant tunneling diode structures grown on Si(100) substrates, Appl. Phys Lett., Vol. 90, No. 9, pp. 092101-1-092101-3, Feb. 2007.
• S. Suzuki, M. Asada. Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in THz and Sub-THz Range, Jpn. J. Appl. Phys., Vol. 46, No. 1, Jan. 2007.
• S. Suzuki, M. Asada. Coherent Power Combination in Highly Integrated Resonant Tunneling Diode Oscillators with Slot Antennas, Jpn. J. Appl. Phys., vol. 46, pp. L1108-L1110, 2007.
• S. Suzuki, M. Asada. Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in Terahertz and Sub-Terahertz Range, Jpn. J. Appl. Phys., vol. 46, pp. 119-121, 2007.
• M. Asada, N. Orihashi, S. Suzuki. Voltage-Controlled Harmonic Oscillation at About 1 THz in Resonant Tunneling Diodes Integrated with Slot Antennas, Jpn. J. Appl. Phys., vol. 46, pp. 2904-2906, 2007.
• K. Jinen, K. Uchida, S. Kodaira, M. Watanabe, M. Asada. Improvement of electroluminescence from CdF₂/CaF₂ Intersubband light-emitting structure by trench patterning and hydrogen annealing of Si substrate, IEICE Electronics Express, Vol. 3, No. 23, pp. 493-498, Dec. 2006.
• M. Asada, N. Orihashi, S. Suzuki. Experiment and Theoretical Analysis of Voltage-Controlled Sub-THz Oscillation of Resonant Tunneling Diodes, IEICE Trans. Electron., vol. E89-C, No. 7, pp. 965-971, July 2006.
• Keisuke Jinen, Takeshi Kikuchi, Masahiro Watanabe, MASAHIRO ASADA. Room-Temperature Electroluminescence from a Single-Period (CdF₂/CaF₂) Inter-subband Quantum Cascade Structure on Si Substrate, Jpn. J. Appl. Phys., Vol. 45, No. 4B, pp. 3656-3658, Apr. 2006.
• T. Hori, T. Ozono, N. Orihashi, M. Asada. Frequency mixing characteristics of room temperature resonant tunneling diodes at 100 and 200 GHz, J. Appl. Phys., Vol. 99, No. 6, pp. 064508, Mar. 2006.
• N. Orihashi, S. Suzuki, M. Asada. One THz harmonic oscillation of resonant tunneling diodes, Appl. Phys. Lett., vol. 87, No. 24, p. 233501, Dec. 2005.
• N. Orihashi, S. Hattori, S. Suzuki, M. Asada. Experimental and Theoretical Characteristics of Sub-Terahertz and Terahertz Oscillations of Resonant Tunneling Diodes Integrated with Slot Antennas, Jpn. J. Appl. Phys., vol. 44, No. 11, pp. 7809-7815, Nov. 2005.
• S. Suzuki, N. Orihashi, M. Asada. Mutual Injection Locking between Sub-THz Oscillating Resonant Tunneling Diodes, Jpn. J. Appl. Phys., vol. 44, No. 48, pp. L1439-L1441, Nov. 2005.
• N. Orihashi, S. Hattori, S. Suzuki, M. Asada. Voltage-controlled sub-terahertz oscillation of resonant tunnelling diode integrated with slot antenna, Electronics Letters, Vol. 41, No. 15, pp. 872-873, July 2005.
• MASAHIRO ASADA. Structural Dependence of the Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diodes grown on Si using Nanoarea Local Epitaxy, IEEE Transactions on Nanotechnology, 2004.
• MASAHIRO ASADA. Theoretical analysis of interaction between electron beam and electro- magnetic wave for unidirectional optical amplifier, Journal of Applied Physics, Vol. 95, No. 9, pp. 5123-5130, 2004.
• MASAHIRO ASADA. Millimeter and Submillimeter Oscillators Using Resonant Tunneling Diodes with Stacked-Layer Slot Antenna, Japanese Journal of Applied Physics, Vol. 43, No. 10, pp. L1309-L1311, 2004.
• MASAHIRO ASADA. Increase in Drive Current by Pt/W Protection on Short-Channel Schottky Source/Drain Metal-Oxide- Semiconductor Field-Effect Transistors with Metal Gate, Japanese Journal of Applied Physics, Vol. 43, No. 9, pp. 5967-5972, 2004.
• MASAHIRO ASADA. Proposal and Analysis of a Semiconductor Klystron Device for Terahertz Range Using Two-Dimensional Electron Gas, Japanese Journal of Applied Physics, Vol. 43, No. 9, pp. 5967-5972, 2004.
• MASAHIRO ASADA. Proposal and Analysis of a Travelling-Wave Amplifier in Terahertz Range Using Two-Dimensional Electron Gas, Japanese Journal of Applied Physics, Vol. 42, No. 4A, pp. 1332-1333, 2004.
• MASAHIRO ASADA. Theory of superradiance from photon-assisted tunneling electrons and its application to terahertz devices, Journal of Applied Physics, Vol. 94, No. 1, pp. 677-685, 2003.
• MASAHIRO ASADA. Quantum theory of a semiconductor klystron, Physical Review B, Vol. 67, No. 15, pp. 115303 1-8, 2003.
• Masahiro Watanabe, Tatsuya Ishikawa, Masaki Matsuda, THORU KANAZAWA, MASAHIRO ASADA. Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy, 44th 2002 Electronic Materials Conference, 44th 2002 Electronic Materials Conference, Z5, Vol. Z5, pp. 54-55, June 2002.
• M.Tsutsui, M.Asada. Dependence of drain current on gate oxide thickness of p-type vertical PtSi Schottky source/drain MOSFET, Japan. J.Appl.Phys., Vol. 41, No. 1, pp. 54-58, 2002.
• MASAHIRO ASADA. Analysis and Fabrication of P-Type Vertical Schottky Source/Drain MOSFET, Trans. Electron., IEICE, Vol. E85-C, pp. 1191-1199, 2002.
• MASAHIRO ASADA. Theoretical analysis of terahertz harmonic generation in resonant tunneling diodes, Japan.J.Appl.Phys., Vol. 40, No. 12, 2001.
• M.Asada, N.Sashinaka. Nonlinear terahertz gain estimated from multiphoton-assisted tunneling in resonant tunneling diodes, Japan.J.Appl.Phys., Vol. 40, No. 9, pp. 5394-5398, 2001.
• MASAHIRO ASADA. Density-matrix modeling of terahertz photon-assisted tunneling and optical gain in resonant tunneling structures, Japan.J.Appl.Phys., Vol. 40, No. 9, pp. 5251-5256, 2001.
• M. Watanabe, Y. Iketani, M. Asada. Epitaxial Growth and Electrical Characteristics of CaF₂/Si/CaF₂ Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate, Jpn. J. Appl. Phys., Vol. 39, No. 10A, pp. L964-L967, Oct. 2000.
• N.Sashinaka, Y.Oguma, M.Asada. Observation of terahertz photon-assisted tunneling in triple-barrier resonant tunneling diodes integrated with patch antenna, Japan.J.Appl.Phys., Vol. 39, No. 8, pp. 4899-4903, 2000.
• A.Itoh, M.Saitoh, M.Asada. A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transistor on SIMOX substrate, Japan.J.Appl.Phys., Vol. 39, No. 8, pp. 4757-4758, 2000.
• M.Asada, Y.Oguma, N.Sashinaka. Estimation of interwell terahertz gain by photon-assisted tunneling measurement in triple-barrier resonant tunneling diodes, Appl.Phys.Lett., Vol. 77, No. 5, pp. 618-620, 2000.
• M.Watanabe, Y.Iketani, M.Asada. Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structure grown on Si(111) 1-degree-off substrate, Japan.J.Appl.Phys., Vol. 39, No. 10A, pp. L964-L967, 2000.
• M. Tsutsui, M. Watanabe, M. Asada. Resonant tunneling diodes in Si/CaF₂ heterostructures grown by molecular beam epitaxy, Jpn. J. Appl. Phys., Vol. 38, No. 8B, pp. L920-L922, Aug. 1999.
• M.Tsutsui, M.Watanabe, M.Asada. Resonant tunneling diodes in Si/CaF2 heterostructures grown by molecular beam epitaxy, Japan.J.Appl.Phys., Vol. 38, No. 8B, pp. L920-L922, 1999.
• W.Saitoh, A.Itoh, S.Yamagami, M.Asada. Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50nm n-type devices with metal gate, Japan.J.Appl.Phys., Vol. 38, No. 11, pp. 6226-6231, 1999.
• W.Saitoh, S.Yamagami, A.Itoh, M.Asada. 35nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate, Japan.J.Appl.Phys., Vol. 38, No. 6A, pp. L629-L631, 1999.
• N.Kikegawa, B.Zhang, Y.Ikeda, N.Sakai, K.Furuya, M.Asada, M.Watanabe, W.Saitoh. Detection Time Shortening for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscope, Japan.J.Appl.Phys., Vol. 38, No. 4A, pp. 2108-2113, 1999.
• Y.Oguma, N.Sashinaka, M.Asada. Terahertz response with gradual change from square-law detection to photon-assisted tunneling in tripple-barrier resonant tunneling diodes, Japan.J.Appl.Phys., Vol. 38, No. 7A, pp. L717-L719, 1999.
• Y.Miyamoto, A.Yamaguchi, K.Oshima, W.Saitoh, M.Asada. MIS Emitter with Epitaxial CaF2 Layer as Insulator, J.Vac.Sci.Tech., Vol. B16, No. 2, pp. 851, 1998.
• MASAHIRO WATANABE, W. Saitoh, K. Mori, H. Sugiura, T. Maruyama, M. Asada. Reduction of Electrical Resistance of Nanometer-Thick CoSi₂ Film on CaF₂ by pseudomorphic growth of CaF₂ on Si(111), Jpn. J. Appl. Phys., Vol. 36, No. 7A, pp. 4470-4471, July 1997.  公式リンク  
  
• MASAHIRO WATANABE, H. Hongo, T. Hattori, Y. Miyamoto, K. Furuya, T. Matsunuma, M. Asada. Seventy nm Pitch Patternings on CaF₂ by e-beam Exposure: An Inorganic Resist and a Contamination Resist, Jpn. J. Appl. Phys., Vol. 35, No. 12A, pp. 6342-6343, Dec. 1996.
• M. Watanabe, F. Iizuka, M. Asada. Visible Light Emission from Nanocrystalline Silicon Embedded in CaF₂ Layers on Si(111), IEICE Trans., Vol. E79-C, No. 11, pp. 1562-1567, Nov. 1996.
• MASAHIRO WATANABE, Y. Miyamoto, K, T. Maruyama, M. Asada. Detection of hot electron current with scanning hot electron microscopy, Appl. Phys. Lett, Vol. 69, No. 15, pp. 2196-2198, Oct. 1996.
• MASAHIRO ASADA. Room-Temperature Observation of Negative Differential Resistance in a Metal(CoSi2)/Insulator(CaF2)Quantum Interference Transistor Structure, Physica B, Vol. 227, pp. 213, 1996.
• MASAHIRO ASADA. Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon, Japanese Journal of Applied Physics, Vol. 35, No. 9, pp. L1104, 1996.
• MASAHIRO ASADA. Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range, IEICE Transaction on Electronics, Vol. E79-C, No. 11, pp. 1537, 1996.
• MASAHIRO ASADA. A Possible Three-Terminal Amplifier Device in the Terahertz Frequency Range Using Photon-Assisted Tunneling, Japanese Journal of Applied Physics, Vol. 35, No. 6A, pp. L685-L687, 1996.
• MASAHIRO WATANABE, MASAHIRO ASADA. Transfer Efficiency of Hot Electron in a Metal (CoSi₂)/Insulator(CaF₂)Quantum Interference Transistor, Surface science, Vol. 361, No. 362, pp. 209-212, 1996.
• T. Suemasu, W. Saitoh, Y. Kohno, K. Mori, M. Watanabe, M. Asada. Transfer efficiency of hot electrons in a metal(CoSi₂)/ insulator(CaF₂) quantum interference transistor, Surface science, Vol. 361/362, pp. 209-212, 1996.
• T. Suemasu, Y. Kohno, W. Saitoh, M.Watanabe, M. Asada. Theoretical and measured characteristics of metal(CoSi₂)/ Insulator(CaF₂) resonant tunneling transistors and the influence of parasitic elements, IEEE Trans. Electron Devices, Vol. 42, No. 12, pp. 2203-2210, Dec. 1995.
• MASAHIRO WATANABE, W. Saitoh, T. Suemasu, Y. Kohno, M. Asada. Metal(CoSi₂)/insulator(CaF₂) hot electron transistor fabricated by electron-beam lithography on a Si substrate, Jpn. J. Appl. Phys, Vol. 34, No. 10A, pp. 1254-1256, Oct. 1995.
• MASAHIRO WATANABE, M. Watanabe, F. Iizuka, M. Asada. Formation of silicon and cobalt silicide nanoparticles in CaF₂, Jpn. J. Appl. Phys, Vol. 34, No. 8B, pp. 4380-4383, Aug. 1995.
• W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, M. Asada. Multiple negative differential resistance due to quantum interference of Hot electron waves in metal(CoSi₂)/insulator(CaF₂) heterostructures and influence of parasitic elements, Jpn. J. Appl. Phys, Vol. 34, No. 8B, pp. 4481-4484, Aug. 1995.
• MASAHIRO ASADA. Teoretical and Measured Characteristics of Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling Transistors and the Influence of Parasitic Elements, IEEE Transactions on Electron Devices, Vol. 42, No. 12, pp. 2203-2210, 1995.
• M.Asada, M.Watanabe, T.Suemasu, Y.Kohno, W.Saitoh. Epitaxial Growth of a Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Heterostructure and Its Application to Quantum-Effect Devices, Journal of Vacuum Science and Technology, Vol. A-13, No. 3, pp. 623-628, 1995.
• MASAHIRO ASADA. Multiple Negative Differential Resistance Due to Quantum Interference of Hot Electron Waves in Metal(CoSi2)/Insulator(CaF2) Heterostructures and Influence of Parasitic Elements, Japanese Journal of Applied Physics, Vol. 34, pp. 4481-4483, 1995.
• MASAHIRO WATANABE, T. Suemasu, Y. Kohno, W. Saitoh, N. Suzuki, M. Asada. Quantum interference of electron wave in metal(CoSi₂)/ insulator(CaF₂) resonant tunneling hot electron transistor structure, Jpn. J. Appl. Phys., Vol. 33, No. 12B, pp. L1762-L1765, Dec. 1994.
• MASAHIRO WATANABE, T. Suemasu, Y.Kohno, N.Suzuki, M.Asada. Different Characteristics of Metal (CoSi₂)/ Insulator(CaF₂) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer, IEICE Trans., Vol. E77-C, No. 9, pp. 1450-1454, Sept. 1994.
• MASAHIRO WATANABE, T. Suemasu, J. Suzuki, Y. Kohno, M. Asada, N. Suzuki. Metal(CoSi₂)/Insulator(CaF₂) Resonant Tunneling Diode, Jpn. J. Appl. Phys., Vol. 33, No. 1A, pp. 57-65, Jan. 1994.
• H.Hirayama, M.Asada, Y.Suematsu. Lasing Action of GaInAs/GaInAsP/InP Tensile-Strained Quartum-Box Laser, Electronics Letters, Vol. 30, No. 2, pp. 142-143, 1994.
• MASAHIRO ASADA. Metal (CoSi2)/Insulator (CaF2) Resonent Tunneling Diode, Japan. J. Appl. Phys., Vol. 33, No. 1, pp. 57-65, 1994.
• MASAHIRO ASADA. Metal/Insulator Heterostructure Electron Devices, Monthly Publication of Japan. Soc. Appl. Phys., Vol. 63, No. 2, pp. 124-131, 1994.
• MASAHIRO WATANABE, N. Suzuki, M. Asada. Reflection High-Energy Electron Diffraction Oscillation during CaF₂ growth on Si(111) by Partially Ionized-Beam-Epitaxy, Jpn. J. Appl. Phys., Vol. 32, No. 2, pp. 940-941, Feb. 1993.
• MASAHIRO WATANABE, T. Suemasu, S. Muratake, M. Asada. Negative Differential Resistance of Metal (CoSi₂)/Insulator(CaF₂) Triple-Barrier Resonant Tunneling Diode, Applied Physics Letters, Vol. 62, No. 3, pp. 300-302, Jan. 1993.
• Y.Miyake, H.Hirayama, K.Kudo, S.Tamura, S.Arai, M.Asada, Y.Miyamoto, Y.Suematsu. Room Temperature Operation of GaInAs/GaInAsP/InP SCH lasers with Quantum-Wire Size Active Region, IEEE J. Quantum Electron., Vol. 29, No. 6, pp. 2123-2133, 1993.
• T. Suemasu, M. Watanabe, M. Asada, N. Suzuki. Room Temperature Negative Differential Resistance of Metal (CoSi₂)/ Insulator(CaF₂) Resonant Tunneling Diode, Electron. Lett., Vol. 28, No. 15, pp. 1432-1433, July 1992.
• S. Muratake, M. Watanabe, T. Suemasu, M. Asada. Transistor Action of Metal (CoSi₂)/ Insulator (CaF₂) Hot Electron Transistor Structure, Electron. Lett., Vol. 28, No. 11, pp. 1002-1003, May 1992.
• M. Watanabe, S. Muratake, H. Fujimoto, S. Sakamori, M. Asada, S. Arai. Epitaxial Growth of Metal (CoSi₂)/ Insulator(CaF₂) Nanometer-Thick Layered Structure on Si(111), Jpn. J. Appl. Phys., Vol. 31, No. 2A, pp. L116-L118, Feb. 1992.
• M. Watanabe, S. Muratake, H. Fujimoto, S. Sakamori, M. Asada, S. Arai. Epitaxial Growth and Electrical Conductance of Metal (CoSi₂)/ Insulator (CaF₂) Nanometer-Thick Layered Structure on Si(111), J. Electron. Mater., Vol. 21, No. 8, pp. 783-789, Jan. 1992.
• MASAHIRO ASADA. Band gap shrinkage in GaInAs/GaInAsP/InP mult-Iquantum well lasers, Journal of Applied Physics, Vol. 72, pp. 1, 1992.
• MASAHIRO ASADA. Analysis of Current Injection Efficiency of Separate-Confinement-Heterostructure Quantum-Film Lasers, IEEE Journal of Quantum Electronics, Vol. 28, pp. 1, 1992.
• MASAHIRO ASADA. Advantage of Sttained Quantum Wire Lasers, Japanese Journal of Applied Physics, Vol. 31, pp. 2A, 1992.
• MASAHIRO ASADA. Epitaxial Growth and Electrical Conductance of Metal(CoSi┣D22┫D2)/Insulator (CaF┣D22┫D2) Nanometer-Thick Layered Structures on Si(111), Journal of Electronic Materials, Vol. 21, pp. 8, 1992.
• MASAHIRO ASADA. Transistor action of metal(CoSi┣D22┫D2)/insulator(CaF┣D22┫D2) hot electron transistor structure, Electronics Letters, Vol. 28, pp. 11, 1992.
• MASAHIRO WATANABE, MASAHIRO ASADA. Epitaxial Growth Meal (CoSi₂)/Insulator (CaF₂) Nanometer-Thick Layered Structure on Si (111), Japanese Journal of Applied Physics, Vol. 31, No. 2A, pp. L116, 1992.
• T. Sakaguchi, M. Watanabe, M. Asada. Proposal and Analysis of Quantum-Interference High-Speed Electron Devices Using Metal-Insulator Heterostructure, IEICE Trans. Electron., Vol. E74-C, No. 10, pp. 3326-3333, Oct. 1991.
• MASAHIRO ASADA. Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch, IEEE Journal of Lightwave Technology, Vol. 9, pp. 10, 1991.
• MASAHIRO ASADA. Optical Switch using semiconductor quantum well structures, Nonlinear Optics, Vol. 1, pp. 1, 1991.
• MASAHIRO ASADA. Proposal and analysis of quantum-interference high-speed electron devices using metal-insulator heterostructure, Transactin of IEICE of Japan, Vol. E74, pp. 10, 1991.
• M. Watanabe, H. Muguruma, M. Asada, S. Arai. Low temperature (～420°C) epitaxial growth of CaF₂/Si(111) by Ionized-Cluster-Beam technique, Jpn. J. Appl. Phys., Vol. 29, No. 9, pp. 1803-1804, Sept. 1990.

著書

• MASAHIRO ASADA, Safumi Suzuki. Fundamentals of Terahertz Devices and Applications (Edited by D. Pavlidis), Mar. 2021.
• MASAHIRO ASADA, Safumi Suzuki. THz Communications (Edited by T. Kuerner, D. Mittelemen, and T. Nagatsuma), Mar. 2021.
• M. Asada, S. Suzuki. Handbook of Terahertz Technologies: Devices and Applications, Chapter 7, Resonant Tunneling Diodes for THz Sources, Pan Stanford Publishing, 2014.
• 浅田雅洋, 平野拓一. 電磁気学, 培風館, Nov. 2009.
• 浅田雅洋. テラヘルツ技術総覧, (分担）NGT, NGT, Nov. 2007.
• MASAHIRO ASADA. Quantum-Well Lasers, Academic Press, Academic Press, 1993.

国際会議発表 (査読有り)

• Yuma Takida, Safumi Suzuki, MASAHIRO ASADA, Hiroaki Minamide. Sensitive continuous-wave terahertz detection by resonant-tunneling-diode oscillators, IRMMW-THz 2020, Nov. 2020.
• Hiroki Konno, Adrian Dobroiu, Safumi Suzuki, MASAHIRO ASADA, Hiroshi Ito. OCT technique for distance measurement using an RTD terahertz oscillator, IRMMW-THz 2020, Nov. 2020.
• Ta Van Mai, Yusei Suzuki, Safumi Suzuki, MASAHIRO ASADA. Novel RTD oscillator with simplified strucutre and fabrication process, IRMMW-THz 2020, Nov. 2020.
• Adrian Dobroiu, Yusuke Shirakawa, Safumi Suzuki, MASAHIRO ASADA, Hiroshi Ito. Distance measurement using a subcarrier frequency-modulated continuous-wave radar based on a resonant-tunneling-diode oscillator, IRMMW-THz 2020, Nov. 2020.
• Han Feifan, Hirdenari Fujikata, Kazunoro Kobayashi, Hiroki Tanaka, Safumi Suzuki, MASAHIRO ASADA. Impedance matching method in high-power RTD THz oscillator integrated with rectangular-cavity resonator, IRMMW-THz 2020, Nov. 2020.
• Mikhail Bezhko, Safumi Suzuki, MASAHIRO ASADA. Analysis of oscillation characteristics for resonant-tunneling diode cavity-type terahertz oscillator, IRMMW-THz 2020, Nov. 2020.
• G. Yamashita, W. Tsujita, R. Ma, P. Wang, P.V. Orlik, S. Suzuki, A. Dobroiu, and M. Asada. Terahertz polarimetric sensing for linear encoder based on a resonant-tunneling-diode and CFRP polarizing plates, Sept. 2019.
• Y. Takida, S. Suzuki, M. Asada, and H. Minamide. Sensitivity measurement of resonant-tunneling-diode terahertz detectors, Sept. 2019.
• A. Dobroiu, R. Wakasugi, Y. Shirakawa, S. Suzuki, and M. Asada. Amplitude-modulated continuous-wave radar in the terahertz band using a resonant-tunneling-diode oscillator, Sept. 2019.
• K. Arzi, S. Suzuki, A. Rennings, D. Erni, N. Weimann, M. Asada, and W. Prost. Wireless injection locking of a free running RTD-based THz Oscillator, Aug. 2019.
• H. Tanaka, K. Kobayashi, R. Izumi, S. Suzuki, and M. Asada. Fabrication of resonant- tunneling-diode terahertz oscillators using rectangular cavity resonators and bow-tie antennas for high output powers, May 2019.
• K. Arzi, S. Clochiatti, S. Suzuki, A. Renning, D. Erni, N. Weimann, M. Asada, and W. Prost. Triple-barrier resonant-tunneling diode THz detectors with on-chip antenna, Mar. 2019.
• H. Tanaka, R. Izumi, S. Suzuki, and M. Asada. Terahertz Oscillators Using Resonant Tunneling Diodes and Cavity Resonators for High Output Powers, Nov. 2018.
• A. Dobroiu, R. Wakasugi, Y. Shirakawa, S. Suzuki, and M. Asada. Toward a Solid-State, Compact, Terahertz-Wave Radar, Nov. 2018.
• J. Hu, R. Wakasugi, S. Suzuki, and M. Asada. Amplitude-Modulated Continuous-Wave Ranging System with Resonant-Tunneling-Diode Terahertz Oscillator, Sept. 2018.
• H. Matsumoto, S. Suzuki, M.Asada, Y. Monnai. Waveguide Coupling of Resonant-Tunneling Diode Terahertz Oscillator, Sept. 2018.
• Y. Chen, S. Suzuki, and M. Asada. Generation of Terahertz Vortex Waves in Resonant-Tunneling-Diode Oscillators by Integrated Radial Line Slot Antenna, Sept. 2018.
• A. K. Dal Bosco, S. Suzuki, M. Asada, and H. Minamide. Feedback effects and nonlinear dynamics in Resonant Tunneling Diodes, Sept. 2018.
• A. Dobroiu, R. Wakasugi, S. Suzuki, and M. Asada. Absolute and accurate distance measurement using a resonant-tunneling diode terahertz oscillator, Sept. 2018.
• K. Arzi, S. Suzuki, A. Rennings, D. Erni, N. Weimann, M. Asada, and W. Prost. On the Sensitivity of Triple-barrier Resonant-tunneling (Sub-) mm-wave Detectors, Aug. 2018.
• H. Tanaka, Y. Aoyama, R. Izumi, S. Suzuki, and M. Asada. Proposal of Novel Terahertz Oscillators Using Resonant Tunneling Diodes and Cavity Resonators, Aug. 2018.
• S. Suzuki, M. Asada, and Y. Aoyama. Proposal of a Resonant-tunneling-diode Terahertz Oscillator Integrated with Rectangular Cavity Resonator for High Output Power, Aug. 2018.
• K. Kasagi, S. Suzuki, and M. Asada. Large-Element Array of Resonant-Tunneling-Diode Terahertz Oscillator for High Output Power at 1 THz Region, May 2018.
• 25. K. Arzi, A. Rennings, D. Erni, N. Weimann, W. Prost, S.Suzuki, and M.Asada. Millimeter-wave signal generation and detection via the same triple barrier RTD and on-chip antenna, May 2018.
• K. Arzi, S. Suzuki, A. Rennings, D. Erni, N. Weimann, M. Asada, and W. Prost. Triple Barrier RTD Integrated in a Slot Antenna for Mm-Wave Signal Generation and Detection, May 2018.
• A. K. Dal Bosco, S. Suziki, M. Asada and H. Minamide. Resonant tunneling diodes versus semiconductor laser with feedback: confronting their oscillating dynamics, Apr. 2018.
• D. Horikawa, N. Oshima, S. Suzuki, M. Asada. Wireless Data Transmission using Circularly-Polarized Wave Generated by Resonant-Tunneling-Diode Terahertz Oscillator Integrated with Radial Line Slot Antennas, Nov. 2017.
• A. K. Dal Bosco, S. Suzuki, M. Asada, H. Minamide. High-frequency oscillations in a resonant tunneling diode with optical feedback, Nov. 2017.
• R. Izumi, S. Suzuki, M. Asada. 1.98 THz Resonant-Tunneling-Diode Oscillator with Reduced Conduction Loss by Thick Antenna Electrode, Aug. 2017.
• K. Ogino, S. Suzuki, M. Asada. Phase Locking of Resonant-Tunneling-Diode Terahertz Oscillator Using Bias-Dependent Oscillation Frequency, Aug. 2017.
• K. Ogino, S. Suzuki, M. Asada. Phase Locking of Resonant-Tunneling-Diode Terahertz Oscillators, Aug. 2017.
• K. Murano, S. Fukuma, S. Suzuki, M. Asada, W. Withayachumnankul, T. Tanaka, Y. Monnai. Design of Terahertz Leaky-Wave Antenna Driven by Resonant-Tunneling Diode, Aug. 2017.
• Y. Takida, K. Nawata, S. Suzuki, M. Asada, H. Minamide. Nonlinear Optical Detection of Terahertz-Wave Radiation, June 2017.
• Y. Takida, K. Nawata, S. Suzuki, M. Asada, H. Minamide. Simultaneous Nonlinear Up-Conversion of Dual-Frequency Terahertz-Wave Radiation, June 2017.
• S.Fukuma, S.Suzuki, M.Asada. Proposal and Gain Estimation of Terahertz Amplifier Using Resonant Tunneling Diodes with 90 Degree Hybrid Coupler, May 2017.
• S. Sasaki, S. Kawamura, S. Suzuki, M. Asada. Resonant-Tunneling-Diode Terahertz Oscillators Integrated with Broadband Bow-tie Antenna, May 2017.
• A. K. Dal Bosco, S. Suzuki, M. Asada, H. Minamide. Study on nonlinear dynamics in Resonant Tunneling Diodes (RTD): unlocking dynamical diversity for THz devices applications, Apr. 2017.
• Daisuke Take, Mizuki Shirao, Kaoru Maruyama, Nobuhiko Nishiyama, Masahiro Asada, Shigehisa Arai. Compact Optical/THz Signal Converter using Photo-generated Carrier Gate in THz Waveguide, the IEEE Photonics Conference 2012, the IEEE Photonics Conference 2012, Sept. 2012.
• Mizuki Shirao, Ryo Yokoyama, Yuki Numajiri, Nobuhiko Nishiyama, MASAHIRO ASADA, SHIGEHISA ARAI. Direct Conversion to Sub-THz Signal from 1.55-μm Optical Signal Using Photon-Generated Free-Carriers, 2008 LEOS Annual Meeting, 2008 LEOS Annual Meeting, No. TuJ 3, Nov. 2008.
• M. Watanabe, T. Kanazawa, M. Asada. Transmission Electron Microscopy Analysis of CaF₂/CdF₂/CaF₂ Resonant Tunneling Diode Structures grown on Si(100) Substrate, The 34th International Symposium on Compound Semiconductors (ISCS2007), Vol. TuD P8, pp. 222, Oct. 2007.
• H. Sano, K. Jinen, S. Kodaira, K. Uchida, M. Kumei, Y. Fujihisa, M. Watanabe, M. Asada. Mid-infrared (～4μm) Electroluminescence from CdF₂/CaF₂ Intersubband transition structures grown on Si(111) substrate, 15th International Conference on Nonequilibrium carrier Dynamics in Semiconductors (HCIS15), Vol. MoP-31, pp. 47, July 2007.
• T. Kanazawa, R. Fujii, T. Wada, Y. Suzuki, M. Watanabe, M. Asada. Control of NDR Characteristics of CdF₂/CaF₂ RTDs Using Nano-Area Local Growth on Si(100) Substrates, 2006 International Microprocesses and Nanotechnology Conference, Vol. 27B-11-7, pp. 410-411, Oct. 2006.
• K. Jinen, T. Kikuchi, M. Watanabe, M. Asada. Near-infrared Electroluminescence from Multilayered CdF₂/CaF₂ Quantum Heterostructure Grown on Trench-Patterned Si(111) Substrate, 3rd IEEE International Conference of GroupIV Photonics, Vol. P29, pp. 128-130, Sept. 2006.
• T. Kanazawa, A. Morosawa, M. Watanabe, M. Asada. High peak-to-valley current ratio of CdF₂/CaF₂ resonant tunneling diode grown on Si(100) substrates, 2005 International conference on Solid State Devices and Materials, Vol. G-1-7, pp. 162-163, Sept. 2005.
• K. Jinen, T. Kikuchi, M. Watanabe, M. Asada. Room temperature electroluminescence of CdF₂/CaF₂ intersubband transition laser structures grown on Si substrate, 2005 International conference on Solid State Devices and Materials, Vol. G-4-3, pp. 412-413, Sept. 2005.
• M. Watanabe, T. Kanazawa, K. Jinen, M. Asada. Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(100) Substrate, 2004 Silicon Nanoelectronics Workshop, 2004 Silicon Nanoelectronics Workshop,9-20, Vol. 9-20, pp. 145-146, June 2004.
• M. Watanabe, M. Matsuda, H. Fujioka, T. Kanazawa, M. Asada. Memory Effect of CdF₂/CaF₂ Resonant Tunneling Diode grown on p-type Silicon Substrate, The 11th International Conference on Modulated Semiconductor Structures -MSS11-, PC47, pp. 454-455, July 2003.
• M. Watanabe, M. Matsuda, H. Fujioka, T. Kanazawa, M. Asada. Structure Dependence of Negative Differential Resistance Characteristics of CdF₂/CaF₂ Resonant Tunneling Diode grown by Local Epitaxy on Silicon, 2003 Silicon Nanoelectronics Workshop, 2003 Silicon Nanoelectronics Workshop, 8-07, Vol. 8-07, pp. 106-107, June 2003.
• M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, M. Asada. Systematic variation of negative differential resistance characteristics of CdF₂/CaF₂ Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy, The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), Tu4-3, Vol. Tu4-3, pp. 103-106, Sept. 2002.
• M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, M. Asada. Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy, 26th International Conference on the Physics of Semiconductors, 26th International Conference on the Physics of Semiconductors, P157, Vol. P157, pp. 219, July 2002.
• Masahiro Watanabe, MASAHIRO ASADA. CaF₂/CdF₂ Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate (Invited), Frontier Science Research Conference, Science and Technology of Silicon Materials, Frontier Science Research Conference, Science and Technology of Silicon Materials, S-II, La Jolla/CA, U.S.A., Vol. S-II, Aug. 2001.
• M. Watanabe, Y. Iketani, M. Asada. Characteristics of Epitaxial Si/CaF₂ Resonant Tunneling Diodes Grown on Si(111) 1° off Substrate, 2000 IEEE Silicon Nanoelectronics Workshop, 5-6, 63-64, June 2000.
• W. Saitoh, Y. Aoki, J. Nishiyama, M. Watanabe, M. Asada. Epitaxial growth of Si/CdF₂/CaF₂ heterostructures on Si substrate, 39th Electronic Materials Conference, U9, 48, June 1997.
• M. Watanabe, T. Matsunuma, T. Maruyama, M. Asada. Electroluminescence from silicon nanoparticles embedded in CaF₂ on Si(111), Phantoms Strategic Domain Meetings (PHASDOM97), D2.23c, Mar. 1997.
• M. Asada, M. Watanabe, W. Saitoh, K. Mori, Y. Kohno. Quantum-Effect Electron Devices Using Metal/Insulator Nanostructures (Invited), the 1996 International Conference on Solid State Devices and Materials, Sympo. IV-1, 169-171, Aug. 1996.
• F. Vazquez, D. Kobayashi, I. Kobayashi, K. Furuya, Y. Miyamoto, T. Maruyama, M. Watanabe, M. Asada. Experimental Evidence of Hot Electron Detection with Scanning Hot Electron Microscopy (SHEM), the 1996 International Conference on Solid State Devices and Materials, Sympo. IV-7, 187-189, Aug. 1996.
• K. Mori, W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, M. Asada. Room Temperature Observation of Multiple Negative Differential Resistance in a Metal(CoSi₂)/Insulator (CaF₂) Quantum Interference Transistor Structure, Third International Symposium on “New Phenomena in Mesoscopic Structures”, H4, 188-190, Dec. 1995.
• M. Watanabe, T. Suemasu, W. Saitoh, M. Asada. Metal(CoSi₂)/Insulator(CaF₂) Heterostructure Quantum Effect Device (Invited Paper), IEEE Lasers and Electro-Optics Society 1995 annual meeting, (Invited) OMP 2.3, 89-90, Oct. 1995.
• W. Saitoh, T. Suemasu, Y. Kohno, M.Watanabe, M. Asada. Metal(CoSi₂)/Insulator(CaF₂) Hot Electron Transistor usig Electron-Beam Lithography on Si Substrate, the 25th European Solid State Device Recearch Conference, P1.7, Sept. 1995.
• T. Suemasu, W. Saitoh, Y. Kohno, M.Watanabe, M. Asada. Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi₂)/Insulator (CaF₂) Heterostructure, International Conference on the Electronic Properties of Two-Dimensional Systems, PA7, 169-170, Aug. 1995.
• M. Watanabe, F. Iizuka, M. Asada. Photoluminescence Spectra of Silicon Nanometer Grains (<10nm) Embedded in CaF₂Thin Films on Si(111), 1995 Electronic Materials Conference, D3, A6, June 1995.
• T. Suemasu, Y. Kohno, W. Saitoh, K. Mori, M.Watanabe, M. Asada. Metal(CoSi₂)/Insulator(CaF₂) Resonant Tunneling and Interference Transistors Grown on Si Substrate, International Workshop on Quantum Functional Devices, S-11, May 1995.
• M. Watanabe, F. Iizuka, M. Asada. Formation of Silicon and Cobalt Silicide Nanometer Fine Particles (<10nm) in CaF₂, International Workshop on Mesoscopic Physics and Electronics, I22, 126-127, Mar. 1995.
• T. Suemasu, W. Saitoh, Y. Kohno, M.Watanabe, M. Asada. Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi₂)/ Insulator(CaF₂) Heterostructure, International Workshop on Mesoscopic Physics and Electronics, H2, 86-87, Mar. 1995.
• M. Asada, M. Watanabe, T. Suemasu, Y. Kohno. Metal(CoSi₂)/Insulator(CaF₂) resonant tunneling diodes and transistors, National Symposium of American Vacuum Society, (Invited) EM-MoA9, Oct. 1994.
• T. Suemasu, Y. Kohno, M. Watanabe, M. Asada, N. Suzuki. Metal(CoSi₂)/Insulator(CaF₂) Resonant Tunneling Transistor, International Electron Devices Meeting (IEDM '93), 21.5, 553-556, Dec. 1993.
• M. Watanabe, T. Suemasu, J. Suzuki, Y. Kohno, M. Asada, N. Suzuki. CoSi₂/CaF₂ Resonant Tunneling Diode on Si, Materials Research Society 1993 Fall Meeting (MRS '93), (Invited) D1.4, 135, Nov. 1993.
• M. Asada, M. Watanabe, T. Suemasu, N. Suzuki, Y. Kohno. Metal/Insulator Heterostructure Quantum Devices on Si Substrate, International Conference on Solid State Devices and Materials (SSDM'93), D-5-1, 805-807, Aug. 1993.
• T. Suemasu, M. Watanabe, S. Muratake, M. Asada, N. Suzuki. Negative Differential Resistance in Metal(CoSi₂)/Insulator(CaF₂) Resonant Tunneling Diode, 50th Device Research Conference (DRC'92), IIB-4, June 1992.
• M. Watanabe, S. Muratake, H. Fujimoto, S. Sakamori, M. Asada, S. Arai. Epitaxial Growth of CoSi₂/CaF₂ heterostructures on Si(111) by Ionized-Cluster-Beam Technique, Electronic Materials Conference (EMC'91), H2, p. 21-22, June 1991.

国際会議発表 (査読なし・不明)

• S. Szuki and M. Asada. Resonant –tunneling-diode oscillator for THz radar imaging system, Sept. 2019.
• M. Asada and S. Suzuki. Novel resonant-tunneling-diode terahertz oscillators integrated with cavity resonators for high frequency and high output power, Sept. 2019.
• M. Asada and S. Suzuki. Recent progress on terahertz source using resonant tunneling diodes and application, Aug. 2019.
• A. Dobroiu, S. Suzuki, and M. Asada. Terahertz-wave radars based on resonant-tunneling-diode oscillators, Aug. 2019.
• MASAHIRO ASADA. Terahertz resonant tunneling diodes, July 2019.
• MASAHIRO ASADA. Recent progress of RTD THz oscillators and applications, July 2019.
• M. Asada and S. Suzuki. Terahertz Oscillators Using Resonant Tunneling Diodes, Nov. 2018.
• M. Asada and S. Suzuki. THz Oscillators Using Resonant Tunneling Diodes and Their Functions for Various Applications, Sept. 2018.
• S. Suzuki and M. Asada. THz Sensing using Resonant-Tunneling-Diode Oscillator, Sept. 2018.
• S. Suzuki and M. Asada. Resonant-tunneling-diode terahertz oscillators for wireless communications, Aug. 2018.
• M. Asada and S. Suzuki. Resonant-Tunnelling-Diode THz Oscillators for High-Frequency, High-Power, and High-Functional Operations, Apr. 2018.
• S. Suzuki, M. Asada. Resonant-tunneling-diode oscillators for terahertz communications, Dec. 2017.
• S.Suzuki, M. Asada. Tuning and Phase Locking of Resonant-Tunneling-Diode THz Oscillators, Nov. 2017.
• M. Asada, S. Suzuki. Resonant-Tunneling-Diode THz Oscillators and Application to Wireless Communications, Oct. 2017.
• M.Asada, S. Suzuki. THz Oscillators Using Resonant Tunnelling Diodes and Their Functions for Various Applications, Oct. 2017.
• M.Asada, S.Suzuki. Resonant-tunneling-diode terahertz oscillators and applications, Mar. 2017.
• Mizuki Shirao, Ryo Yokoyama, Yuki Numajiri, Nobuhiko Nishiyama, MASAHIRO ASADA, SHIGEHISA ARAI. Direct Modulation of Sub-Teraherz Waves by 1.55-μm Optical Signal, iNOW2008, Technical digest of iNOW 2008, 1-P28, Aug. 2008.

国内会議発表 (査読なし・不明)

• ユ ジョンビン, ハン フェイファン, 鈴木左文, 淺田雅洋. 矩形空洞共振器とスロットアンテナを集積した高出力高周波共鳴トンネルダイオードテラヘルツ発振器, 通信学会THz研究会(合同シンポジウム）, Nov. 2020.
• Mikhail Bezhko, Safumi Suzuki, MASAHIRO ASADA. Estimation of output power characteristics for resonant-tunneling-diode THz oscillator with cylindrical cvity resonator, 応用物理学会秋季講演会, Sept. 2020.
• 瀧田佑馬, 鈴木左文, 南出泰亜, 淺田雅洋. 共鳴トンネルダイオード発振器を用いたテラヘルツ波帯広帯域ヘテロダインミキシング, 応用物理学会秋季講演会, Sept. 2020.
• 今野弘樹, ドブロユ アドリアン, 鈴木左文, 淺田雅洋. RTDテラヘルツ発振器を用いたOCT方式レーダーシステムの誤差の評価及び低減, 応用物理学会秋季講演会, Sept. 2020.
• Han Feifan, Hidenari Fujikata, Kazunori Kobayashi, Hiroki Tanaka, Suzuki Safumi, MASAHIRO ASADA. Structure optimization of RTD THz oscillator integrated with rectangular-cavity resonator for high output power, 応用物理学会秋季講演会, Sept. 2020.
• ユ ションビン, マイ ヴァン タ, 鈴木雄成, 鈴木左文, 淺田雅洋. スプリットリング共振器を集積したテラヘルツ共鳴トンネルダイオード発振器, Sept. 2020.
• Mai Van Ta, Safumi Suzuki, MASAHIRO ASADA. Frequency increase of up to 673 GHz in structure-simplified RTD oscillators with small area, 応用物理学会秋季講演会, Sept. 2020.
• 瀧田 佑馬, 鈴木 左文, 淺田雅洋, 南出 泰亜. 共鳴トンネルダイオード検出器のCWテラヘルツ波に対する感度評価, Mar. 2020.
• 今野 弘樹, ドブロユ アドリアン, 鈴木 左文, 淺田雅洋. RTDテラヘルツ発振器を用いたOCT方式による距離測定, Mar. 2020.
• Feifan Han, Kazunori Kobayashi, Hiroki Tanaka, Safumi Suzuki, MASAHIRO ASADA. Impedance matching in high-power RTD THz oscillator integrated with rectangular-cavity resonator, Mar. 2020.
• Mai Van Ta, Yusei Suzuki, Safumi Suzuki, MASAHIRO ASADA. Simplification in Device Structure and Fabrication Process of RTD THz Oscillator, Mar. 2020.
• Adrian Dobroiu, Yusuke Shirakawa, Safumi Suzuki, MASAHIRO ASADA, Hiroshi Ito. Subcarrier frequency-modulated continuouswave radar based on a terahertz resonant-tunneling-diode oscillator, Mar. 2020.
• Bezhko Mikhail, Safumi Suzuki, MASAHIRO ASADA. Frequancy increase in resonant-tunneling diode THz oscillator by simulation-based structure optimization, Mar. 2020.
• 淺田雅洋. 超小型半導体テラヘルツ光源の開発と応用展開, Feb. 2020.
• 鈴木左文、浅田雅洋. 共鳴トンネルダイオードを用いたテラヘルツ光源の高周波化・高出力化と応用展開, Jan. 2020.
• M. Bezhko, S. Suzuki, and M. Asada. Estiation of a frequency increase in RTD THz oscillator by simulation-based structure optimization, Nov. 2019.
• F. Han, K. Koyayashi, H. Tanaka, S. Suzuki, and M. Asada. Impedance matching in high-power RTD THz oscillator integrated with rectangular- cavity resonator, Nov. 2019.
• 淺田雅洋. 超小型半導体テラヘルツ光源とその応用, Nov. 2019.
• 白川雄介、ドブロユ アドリアン、 鈴木左文、浅田雅洋. 共鳴トンネルダイオードテラヘルツ発振器を用いたサブキャリア周波数変調レーダによる絶対距離測定法, Sept. 2019.
• 泉 龍之介、 佐藤 匠、 鈴木 左文、浅田 雅洋. 円筒形空洞共振器集積共鳴トンネルダイオードテラヘルツ発振器, Sept. 2019.
• A. Dobroiu, R. Wakasugi, Y. Shirakawa, S. Suzuki, and M. Asada. Terahertz-wave radars based on resonant-tunneling-diode oscillators, Aug. 2019.
• 瀧田佑馬、鈴木左文、浅田雅洋、南出泰亜. 共鳴トンネルダイオード検出器のテラヘルツ波パルスに対する感度評価, Mar. 2019.
• 田中大基、 小林和憲、 泉 龍之介、鈴木左文、浅田雅洋. 矩形空洞共振器とボウタイアンテナを集積した高出力共鳴トンネルダイオードテラヘルツ発振器の作製, Mar. 2019.
• A. Dobroiu, R. Wakasugi, Y. Shirakawa, S. Suzuki, and M. Asada. Terahertz-Wave Amplitude-Modulated Radar Based on a Resonant-Tunneling-Diode Oscillator, Mar. 2019.
• A. Dobroiu、 R. Wakasugi、 Y. Shirakawa、 S. Suzuki、 and M. Asada. Amplitude-modulated radar in the terahertz band based on a resonant-tunneling-diode oscillator, Dec. 2018.
• 若杉良貴、ドブロユ アドリアン、 鈴木左文、浅田雅洋. 共鳴トンネルダイオードテラヘルツ発振器を用いた振幅変調による絶対距離測定法, Sept. 2018.
• 田中大基、 泉 龍之介、鈴木左文、浅田雅洋. 空洞共振器と共鳴トンネルダイオードによるテラヘルツ発振器の高出力化, Sept. 2018.
• アルツィ カリッド、 鈴木左文、レニングス レアス、アニ ダニエル、 ヴァイマン ニルス、 浅田雅洋、プロスト ウェナ. 共鳴トンネルダイオードテラヘルツ 発振器 における高調波発生と注入同期, Sept. 2018.
• 胡 霽雨, 若杉良貴, 鈴木左文, 浅田雅洋. 共鳴トンネルダイオードテラヘルツ発振器を用いた振幅変調連続波方式測距システム, Mar. 2018.
• 鈴木, 浅田. 電子デバイスを用いたテラヘルツ応用, Mar. 2018.
• 陳 雲超, 鈴木左文, 浅田雅洋. ラジアルラインスロットアンテナ集積による共鳴トンネルダイオード発振器のTHz渦波発生, Mar. 2018.
• 浅田, 鈴木. 共鳴トンネルダイオードによるテラヘルツ発振器, Jan. 2018.
• 鈴木左文, 堀川大輔, 陳 雲超, 小池拓哉, 浅田雅洋. 円偏波放射が可能なラジアルラインスロットアンテナ集積共鳴トンネルダイオードテラヘルツ発振器, Dec. 2017.
• 堀川大輔, 大島直人, 鈴木左文, 浅田雅洋. ラジアルラインスロットアンテナ集積共鳴トンネルダイオード テラヘルツ発振器による円偏波通信, Sept. 2017.
• 泉 龍之介, 鈴木左文, 浅田雅洋. 共鳴トンネルダイオードテラヘルツ発振器のアンテナ電極厚膜化による1.98 THz基本波発振, Sept. 2017.
• 笠木浩平, 鈴木左文, 浅田雅洋. ダイポールアレイアンテナ集積共鳴トンネルダイオードテラヘルツ発振器の多素子アレイ, Sept. 2017.
• S.Suzuki, M. Asada. Terahertz Oscillators and Receivers Using Electron Devices for Applications, June 2017.
• 武 大助, 白尾 瑞基, 丸山 薫, 西山 伸彦, 浅田 雅洋, 荒井 滋久. 光励起キャリアゲート型光-テラヘルツ信号直接変換器の信号特性の検討, 第73回応用物理学会学術講演会, 第 73 回応用物理学会学術講演会 講演予稿集(2012 秋 愛媛大学・松山大学) 11p-B1-8, Sept. 2012.
• 沼尻 祐貴, 横山 亮, 白尾 瑞基, 西山 伸彦, 浅田 雅洋, 荒井 滋久. 光生成キャリア変調による光信号からサブテラヘルツ信号への直接変換速度特性, 第56回春季応用物理学会学術講演会, 第56回春季応用物理学会学術講演会予稿集, 応用物理学会, Apr. 2009.  公式リンク  
  
• 沼尻 祐貴, 横山 亮, 白尾 瑞基, 西山 伸彦, 浅田 雅洋, 荒井 滋久. テラヘルツ信号の光生成キャリアによる光信号からの直接変換, 電子デバイス研究会, 電子情報通信学会技術研究報告, 社団法人電子情報通信学会, Vol. 108, No. 369, pp. 65-70, Dec. 2008.
• 沼尻祐貴, 横山亮, 白尾瑞基, 西山伸彦, 浅田雅洋, 荒井滋久. 光生成キャリア変調による光信号のテラヘルツ・サブテラヘルツ信号への直接変換, 第69回応用物理学会学術講演会, 第69回応用物理学会学術講演会予稿集, 応用物理学会, Vol. Ⅲ, No. 4p-ZE-11, Sept. 2008.  公式リンク  
  
• 藤久雄己, 粂井正也, 梶浦俊祐, 佐々木雄祐, 渡辺正裕, 浅田雅洋. Si基板上CdF₂/CaF₂サブバンド間遷移レーザに向けたナノエリア微小孔によるリーク電流低減, 第68回応用物理学会学術講演会, 5a-N-5, 3, 1404, Sept. 2007.
• 佐野洋, 自念圭輔, 内田薫, 小平新志, 粂井正也, 藤久雄己, 渡辺正裕, 浅田雅洋. Si(111)基板上CdF₂/CaF₂量子へテロ構造からの中赤外(～4μm) EL発光, 第54回応用物理学会関係連合講演会, 29p-T-19, 3, 1473, Mar. 2007.
• 自念圭輔, 内田薫, 小平新志, 粂井正也, 佐野洋, 渡辺正裕, 浅田雅洋. (CdF₂/CaF₂)量子構造におけるサブバンド間遷移時間の理論解析, 第67回応用物理学会学術講演会, 30p-RE-17, 3, 1267, Aug. 2006.
• 小平新志, 自念圭輔, 内田薫, 粂井正也, 佐野洋, 渡辺正裕, 浅田雅洋. Si基板上フッ化物系サブバンド間遷移レーザに向けた基板表面制御, 第67回応用物理学会学術講演会, 30p-RE-15, 3, 1267, Aug. 2006.
• 内田薫, 自念圭輔, 小平新志, 粂井正也, 佐野洋, 渡辺正裕, 浅田雅洋. 弗化物系サブバンド間遷移レーザのためのSOI構造プラズモン導波路の作製, 第67回応用物理学会学術講演会, 30p-RE-16, 3, 1267, Aug. 2006.
• 金澤 徹, 藤井 諒, 和田 宇史, 鈴木 雄介, 渡辺 正裕, 浅田 雅洋. Si (100)基板上CdF₂/CaF₂ナノ領域成長共鳴トンネルダイオードのI-V特性制御, 第67回応用物理学会学術講演会, 30p-RE-14, 3, 1266, Aug. 2006.
• 自念圭輔, 菊池毅, 渡辺正裕, 浅田雅洋. Si基板上(CdF₂/CaF₂)量子ヘテロ構造のEL発光特性, 第66回応用物理学会学術講演会, 9a-W-6, 3, 1214, Sept. 2005.
• 菊池毅, 自念圭輔, 内田薫, 小平新志, 渡辺正裕, 浅田雅洋. プラズモン導波路を用いた弗化物系サブバンド間遷移レーザの理論解析, 第66回応用物理学会学術講演会, 9a-W-8, 3, 1215, Sept. 2005.
• 金澤徹, 諸澤篤志, 藤井諒, 和田宇史, 渡辺正裕, 浅田雅洋. Si(100)基板上CaF₂/CdF₂/CaF₂量子井戸構造の成長温度依存性, 第66回応用物理学会学術講演会, 9a-W-5, 3, 1214, Sept. 2005.
• 諸澤篤志, 金澤徹, 藤井諒, 和田宇史, 渡辺正裕, 浅田雅洋. ナノ領域成長によるSi(100)基板上CdF₂/CaF₂共鳴トンネルダイオードの微分負性抵抗特性, 第66回応用物理学会学術講演会, 9a-W-7, 3, 1215, Sept. 2005.
• 自念圭輔, 村田博, 渡辺正裕, 浅田雅洋. Si基板上(CdF₂/CaF₂)量子へテロ構造の近赤外EL発光, 第65回応用物理学会学術講演会, 4a-ZK-6, 3, 1242, Sept. 2004.
• 自念圭輔, 村田博, 渡辺正裕, 浅田雅洋. CoSi₂-プラズモン導波路を用いた弗化物系サブバンド間遷移レーザの理論解析, 第51回応用物理学会関係連合講演会, 30p-ZE-1, 3, 1549, Mar. 2004.
• 田村信平, 渡辺正裕, 浅田雅洋. ナノ領域エピタキシー法によるCoSi₂/CaF₂三重障壁共鳴トンネルダイオードの室温微分負性抵抗特性, 第51回応用物理学会関係連合講演会, 30a-ZE-8, 3, 1548, Mar. 2004.
• 金澤 徹, 松田 克己, 渡辺 正裕, 浅田 雅洋. Si (100)基板上CdF₂/CaF₂ 共鳴トンネルダイオードの微分負性抵抗特性の構造依存性, 第64回応用物理学会学術講演会, 30p-ZF-14, 3, 1253, Aug. 2003.
• 自念圭輔, 渡辺正裕, 浅田雅洋. SOI 基板上弗化物系超ヘテロ構造を用いたサブバンド間遷移レーザの解析, 第50回応用物理学会関係連合講演会, 28p-ZE-4, 3, 1462, Mar. 2003.
• 松田克己, 金澤徹, 渡辺正裕, 浅田雅洋. CdF₂/CaF₂ 共鳴トンネルダイオードの電荷蓄積による特性変化, 第50回応用物理学会関係連合講演会, 29a-ZE-5, 3, 1469, Mar. 2003.
• 金澤徹, 松田克己, 渡辺正裕, 浅田雅洋. ダブルステップ化Si(100) 2°off基板上CdF₂/CaF₂ 共鳴トンネルダイオードの作製と評価, 第50回応用物理学会関係連合講演会, 29a-ZE-3, 3, 1469, Mar. 2003.
• 松田克己, 金澤徹, 渡辺正裕, 浅田雅洋. CdF₂/CaF₂共鳴トンネルダイオード微分負性抵抗特性の量子井戸厚依存性, 第63回応用物理学会学術講演会, 25p-P9-11, 3, 1203, Sept. 2002.
• 藤岡裕智, 筒井将史, 石川達也, 渡辺正裕, 浅田雅洋. 縦型MOSFETとRTDによる微細素子の作成, 第49回応用物理学会関係連合講演会, 30a-H-8, 2, 893, Mar. 2002.
• 金澤徹, 松田克己, 石川達也, 金澤徹, 渡辺正裕, 浅田雅洋. Si(100)基板上CdF₂/CaF₂共鳴トンネルダイオードの作製と評価, 第49回応用物理学会関係連合講演会, 27p-YH-3, 3, 1374, Mar. 2002.
• 池谷吉史, 渡辺正裕, 浅田雅洋. Si(111)1°off基板上Si/CaF₂二重障壁共鳴トンネルダイオードの作製と評価, 第47回応用物理学会関係連合講演会, 30a-YD-8, 3, 1340, Mar. 2000.
• 池谷吉史, 渡辺正裕, 浅田雅洋. テラス幅を制御したSi(111)1゜off 基板上へのCaF₂イオンビームエピタキシャル成長, 第60回応用物理学会学術講演会, 1p-T-4, 1, 342, Sept. 1999.
• 筒井将史, 渡辺正裕, 浅田雅洋. Si/CaF₂ヘテロ構造共鳴トンネルダイオードの作製と評価, 第60回応用物理学会学術講演会, 2p-ZL-9, 2, 756, Sept. 1999.
• 齋藤渉, 青木雄一, 西山淳, 渡辺正裕, 浅田雅洋. Si基板上Si/CdF₂/CaF₂ヘテロ構造エピタキシャル成長, 第44回応用物理学会関係連合講演会, 30a-A-3, 1, 294, Mar. 1997.
• 青木雄一, 西山淳, 齋藤渉, 渡辺正裕, 浅田雅洋. CaF₂/CdF₂ヘテロ接合を用いた量子井戸サブバンド間遷移レーザの解析, 第44回応用物理学会関係連合講演会, 28a-ZA-6, 3, 1202, Mar. 1997.
• M. Watanabe, T. Matsunuma, T. Maruyama, M. Asada. Visible Electroluminescence from Silicon Nanoparticles Embedded in CaF₂ on Si(111), Second International Symposium on Control of Semiconductor Interfaces, A3-6, Oct. 1996.
• 齋藤渉, 森郁, 杉浦秀和, 丸山武男, 渡辺正裕, 浅田雅洋. CaF₂上極薄膜CoSi₂電気抵抗のCaF₂結晶依存性, 第57回応用物理学会学術講演会, 8p-ZE17, 1, 200, Sept. 1996.
• 松沼健司, 丸山武男, 渡辺正裕, 浅田雅洋. CaF₂ナノクリスタルシリコンからのEL発光の成長条件依存性, 第43回応用物理学会関係連合講演会, 26aZF5, 1, 214, Mar. 1996.
• 齋藤渉, 山崎克之, 浅田雅洋, 渡辺正裕. 金属／絶縁体ヘテロ構造を用いた電界制御型トンネルトランジスタの理論解析, 第43回応用物理学会関係連合講演会, 26aW6, 3, 1196, Mar. 1996.
• 服部哲也, 本郷廣生, 宮本恭幸, 古屋一仁, 松沼 健司, 渡辺正裕, 浅田雅洋. 電子ビーム露光によるCaF₂無機レジスト70nm周期パターニング, 第43回応用物理学会関係連合講演会, 26a-SZW-27, 2, 565, Mar. 1996.
• 末益崇, 齋藤渉, 森郁, 河野義史, 渡辺正裕, 浅田雅洋. CoSi₂/CaF₂量子干渉トランジスタの微分負性抵抗を用いたホットエレクトロン輸送効率導出, 第43回応用物理学会関係連合講演会, 28p-W11, 3, 1266, Mar. 1996.
• 森郁, 齋藤渉, 末益崇, 河野義史, 渡辺正裕, 浅田雅洋. 極微細金属（CoSi₂）／絶縁体（CaF₂）量子干渉トランジスタの作製と室温特性, 第56回応用物理学会学術講演会, 28p-ZM-9, 3, 1101, Sept. 1995.
• 渡辺正裕, 浅田雅洋, 松沼健司. CaF₂/Si(111)薄膜中に形成されたナノメータSi微結晶, 第56回応用物理学会学術講演会, 26p-ZD-11, 1, 178, Sept. 1995.
• 齋藤 渉, 末益崇, 河野義史, 渡辺正裕, 浅田雅洋. 金属（CoSi₂）／絶縁体（CaF₂）微細ホットエレクトロントランジスタの作製と室温動作, 第42回応用物理学会関係連合講演会, 30p-ZK-7, 3, 1282, Mar. 1995.
• 末益崇, 河野義史, 齋藤 渉, 森 郁, 渡辺正裕, 浅田雅洋. Metal(CoSi₂)/ Insulator(CaF₂) 共鳴トンネルホットエレクトロントランジスタの低電圧動作化, 第42回応用物理学会関係連合講演会, 30p-ZK-6, 3, 1282, Mar. 1995.
• 渡辺正裕, 飯塚文隆, 浅田雅洋. Si微粒子を分散したCaF₂/Si(111)薄膜のフォトルミネッセンス, 第42回応用物理学会関係連合講演会, 29a-H-10, 2, 721, Mar. 1995.
• 河野義史, 末益崇, 齋藤 渉, 渡辺正裕, 浅田雅洋. 金属（CoSi₂）／絶縁体（CaF₂）トンネルホットエレクトロン共鳴トランジスタ, 第55回応用物理学会学術講演会, 19p-T-10, 3, 1061, Sept. 1994.
• 末益崇, 河野義史, 齋藤 渉, 渡辺正裕, 浅田雅洋. 金属（CoSi₂）／絶縁体（CaF₂）共鳴トンネルホットエレクトロントランジスタの作製（II）, 第55回応用物理学会学術講演会, 19p-T-9, 3, 1061, Sept. 1994.
• 齋藤 渉, 末益崇, 河野義史, 渡辺正裕, 浅田雅洋. 金属（CoSi₂）／絶縁体（CaF₂）共鳴トンネルホットエレクトロントランジスタの等価回路モデルによる特性評価, 電気電子通信学会学術講演会, C-420, Sept. 1994.
• 河野義史, 末益崇, 鈴木信弘, 渡辺正裕, 浅田雅洋. 新プロセスによる金属(CoSi₂)/絶縁体(CaF₂)トンネルホットエレクトロン共鳴トランジスタの作製, 第41回応用物理学会関係連合講演会, 30p-S-15, 3, 1230, Mar. 1994.
• 渡辺正裕, 岩井 浩, 浅田雅洋. 絶縁体CaF₂上への金属Co微粒子の形成, 第41回応用物理学会関係連合講演会, 30p-S-17, 3, 1231, Mar. 1994.
• 浅田雅洋, 渡辺正裕, 末益崇, 鈴木信弘, 河野義史. 金属／絶縁体ヘテロ接合を用いた量子効果デバイス, 第41回応用物理学会関係連合講演会, 29p-MA-6, (Symposium), 0, 1328, Mar. 1994.
• 鈴木信弘, 末益崇, 渡辺正裕, 浅田雅洋, 河野義史. 金属（CoSi₂）／絶縁体（CaF₂）微細ホットエレクトロントランジスタの作製（II）, 第41回応用物理学会関係連合講演会, 30p-S-16, 3, 1231, Mar. 1994.
• 末益崇, 河野義史, 鈴木信弘, 齋藤 渉, 渡辺正裕, 浅田雅洋. 金属（CoSi₂）／絶縁体（CaF₂）共鳴トンネルホットエレクトロントランジスタの作製, 第41回応用物理学会関係連合講演会, 30p-S-14, 3, 1230, Mar. 1994.
• 末益崇, 河野義史, 鈴木信弘, 渡辺正裕, 浅田雅洋. 金属(CoSi₂)/絶縁体(CaF₂)共鳴トンネルトランジスタ, 第54回応用物理学会学術講演会, 29p-ZX-5, 3, 1258, Sept. 1993.
• 鈴木信弘, 末益崇, 渡辺正裕, 浅田雅洋, 河野義史. 金属(CoSi₂)/絶縁体(CaF₂)微細ホットエレクトロントランジスタの作製, 第54回応用物理学会学術講演会, 29p-ZX-6, 3, 1258, Sept. 1993.
• 末益崇, 薗田大資, 渡辺正裕, 浅田雅洋, 古屋一仁. Si/CaF₂/Si(111)断面のSTM観察, 第54回応用物理学会学術講演会, 29p-ZX-7, 3, 1259, Sept. 1993.
• 鈴木信弘, 河野義史, 末益崇, 渡辺正裕, 浅田雅洋. 金属(CoSi₂)/絶縁体(CaF₂)共鳴トンネルホットエレクトロントランジスタの作製, 第40回応用物理学会関係連合講演会, 1a-D-3, 3, 1298, Apr. 1993.
• 末益崇, 渡辺正裕, 鈴木淳, 浅田雅洋, 鈴木信弘. 金属(CoSi₂)/絶縁体(CaF₂)共鳴トンネルダイオードにおける共鳴電圧制御, 第40回応用物理学会関係連合講演会, 1a-D-2, 3, 1297, Apr. 1993.
• 渡辺正裕, 村竹茂樹, 末益崇, 浅田雅洋. 金属(CoSi₂)/絶縁体(CaF₂)ホットエレクトロントランジスタの電流増幅動作, 第53回応用物理学会学術講演会, 16a-SZC-17, 3, 1079, Sept. 1992.
• 末益崇, 渡辺正裕, 浅田雅洋, 鈴木信弘. 金属(CoSi₂)/絶縁体(CaF₂)共鳴トンネルダイオードの室温動作と微分負性抵抗特性, 第53回応用物理学会学術講演会, 17a-ZB-7, 3, 1109, Sept. 1992.
• 渡辺正裕, 末益崇, 村竹茂樹, 浅田雅洋, 鈴木信弘. 金属(CoSi₂)/絶縁体(CaF₂)共鳴トンネルダイオードの負性抵抗特性, 第39回応用物理学会関係連合講演会, 28a-T-5, 3, 1107, Mar. 1992.
• 渡辺正裕, 鈴木信弘, 村竹茂樹, 末益崇, 浅田雅洋. Si(111)基板上CaF₂エピタキシーにおけるRHEED強度振動, 第39回応用物理学会関係連合講演会, 29a-ZC-5, 1, 265, Mar. 1992.
• 渡辺正裕, 村竹茂樹, 藤本寛正, 浅田雅洋. 金属(CoSi₂)/絶縁体(CaF₂)超格子構造のエピタキシャル成長, 第52回応用物理学会学術講演会, 9p-Z-11, 1, 228, Oct. 1991.
• 末益崇, 渡辺正裕, 村竹茂樹, 浅田雅洋. Siの電子ビーム蒸着によるCaF₂/Si(111)上へのCoSi₂エピタキシャル成長, 第52回応用物理学会学術講演会, 9p-Z-12, 1, 228, Oct. 1991.
• 村竹茂樹, 渡辺正裕, 浅田雅洋. CoSi₂/CaF₂/Si を用いたMISトンネルダイオードの試作, 第52回応用物理学会学術講演会, 12a-N-7, 2, 478, Oct. 1991.
• 渡辺正裕, 村竹茂樹, 藤本寛正, 坂森重則, 浅田雅洋, 荒井滋久. CaF₂/Si(111)上CoSi₂薄膜の抵抗率測定, 第38回応用物理学会関係連合講演会, 29p-ZF-3, 1, 244, Mar. 1991.
• 六車仁志, 渡辺正裕, 浅田雅洋, 荒井滋久. 金属(CoSi₂)/絶縁体(CaF₂)超格子のエネルギーバンド構造, 第38回応用物理学会関係連合講演会, 29p-M-3, 3, 1158, Mar. 1991.
• 坂口知明, 渡辺正裕, 浅田雅洋. 金属/絶縁体へテロ構造を用いた量子サイズ効果高速電子デバイスの理論解析, 電子通信学会全国大会, C-410, Oct. 1990.
• 渡辺正裕, 六車仁志, 村竹茂樹, 浅田雅洋, 荒井滋久. ICB法による CaF₂/CoSi₂/CaF₂/Si(111) エピタキシャル成長, 第51回応用物理学会学術講演会, 28a-T-11, 1, 275, Sept. 1990.
• 渡辺正裕, 六車仁志, 村竹茂樹, 浅田雅洋, 荒井滋久. ICB法によるCaF₂(111)薄膜上へのCoSi₂エピタキシャル成長, 第37回応用物理学会関係連合講演会, 29a-PC-18, 1, 251, Mar. 1990.
• 浅田雅洋, 坂口知明, 渡辺正裕. ナノメータ絶縁膜を用いたLSI用新デバイスの可能性, 電子通信学会全国大会 (シンポジウム), SC-6-4, Sept. 1989.
• 渡辺正裕, 六車仁志, 浅田雅洋, 荒井滋久. ICB法によるCaF₂膜の低温エピタキシャル成長, 第50回応用物理学会学術講演会, 28a-H-5, 2, 472, Sept. 1989.
• 渡辺正裕, 六車仁志, 浅田雅洋, 荒井滋久. ICB-CaF₂膜における絶縁耐圧の加速電圧依存性, Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 3p-L-1, 2, 605, Apr. 1989.

その他の論文・著書など

• 淺田雅洋. 共鳴トンネルダイオードの室温テラヘルツ発振, Apr. 2019.
• 自念圭輔, 内田薫, 小平新志, 渡辺正裕, 浅田雅洋. ED2006-244，SDM2006-232,  Si基板上弗化物系サブバンド間遷移レーザの理論解析, 電子情報通信学会（電子デバイス研究会）, Vol. 106, No. 520, 23-28, Jan. 2007.
• 金澤 徹, 諸澤篤史, 藤井 諒, 和田宇史, 渡辺正裕, 浅田雅洋. ED2005-233，SDM2005-245,  ナノ領域成長を用いたSi(100)基板上弗化物系共鳴トンネルダイオード, 電子情報通信学会（電子デバイス研究会）, Vol. 105, No. 550, 11-14, Jan. 2006.
• 浅田雅洋. 共鳴トンネル構造における光支援トンネルとテラヘルツデバイス, 応用物理, Vol. 74, No. 5, pp. 587-592, May 2005.
• 渡辺正裕, 田村信平, 金澤徹, 自念圭輔, 浅田雅洋. ローカルエピタキシー法によるCoSi₂/CaF₂三重障壁共鳴トンネルダイオードの微分負性抵抗特性, 電子情報通信学会（電子デバイス研究会）, ED2004-227, SDM2004-222, 7-10, Jan. 2005.
• 渡辺正裕, 金澤徹, 自念圭輔, 浅田雅洋. Si(100)基板上に形成されたCdF₂/CaF₂超ヘテロ構造による共鳴トンネルダイオードの室温微分負性抵抗特性, 電子情報通信学会（電子デバイス研究会）, ED2003-231, SDM2003-217, 25-28, Feb. 2004.
• 渡辺正裕, 松田克己, 藤岡裕智, 金澤徹, 浅田雅洋. ローカルエピタキシー法により形成されたシリコン基板上CdF₂/CaF₂共鳴トンネルダイオードの微分負性抵抗特性の構造依存性, 電子情報通信学会（電子デバイス研究会）, ED2002-287, SDM2002-250, 33-38, Feb. 2003.
• 渡辺正裕, 石川達也, 松田克己, 金澤徹, 浅田雅洋. ナノ領域成長によるSi(111)及びSi(100)基板上CdF₂/CaF₂共鳴トンネルダイオード, 電子情報通信学会（電子デバイス研究会）, ED2001-242, SDM2001-245, 65-70, Jan. 2002.
• 渡辺正裕, 筒井将史, 浅田雅洋. Si-CaF₂及びCdF₂-CaF₂ヘテロ接合を用いたシリコン基板上共鳴トンネルダイオード, 電子情報通信学会（電子デバイス研究会）, ED99-316, SDM99-209, 73-78, Feb. 2000.
• 齋藤渉, 筒井将史, 青木雄一, 山崎克之, 西山淳, 渡辺正裕, 浅田雅洋. Si基板上Si/CdF₂量子井戸構造を用いた電界効果型量子効果デバイス, 電子情報通信学会（電子デバイス研究会）, ED97-6, SDM97-6, 35-42, Apr. 1997.
• Masahiro WATANABE, Takeshi MATSUNUMA, Takeo MARUYAMA, Masahiro ASADA. Visible light emission from nanocrystalline silicon embedded in CaF₂ layers on Si(111), 3rd International Symposium on Quantum Effect Electronics, 11, p. 48, Nov. 1996.
• 浅田雅洋, 渡辺正裕, 末益崇, 河野義史, 齋藤渉, 森郁. 金属(CoSi₂)/絶縁体(CaF₂)/Siヘテロ接合量子効果デバイス, 電子情報通信学会（電子デバイス研究会）, ED96-2, Apr. 1996.
• 渡辺正裕, 末益崇, 鈴木信弘, 浅田雅洋. Si(111)上金属(CoSi₂)/絶縁体(CaF₂)極薄膜多層構造による共鳴トンネルダイオード, 応用物理学会（応用電子物性分科会）, 932204, No. 447, pp. 31-36, Jan. 1993.
• 渡辺正裕, 末益崇, 村竹茂樹, 浅田雅洋. 金属(CoSi₂)/絶縁体(CaF₂)共鳴トンネルダイオードの微分負性抵抗特性, 電子情報通信学会（電子デバイス研究会）, Vol. 92, No. 10, 83-88, Apr. 1992.

特許など

• YUXIONGBIN, MAIVAN TA, 鈴木雄成, 鈴木左文, 淺田雅洋. テラヘルツ発振器. 特許. 公開. 国立大学法人東京工業大学. 2021/03/09. 特願2021-037550. 2022/09/22. 特開2022-137856. 2022.
• 淺田雅洋, 鈴木左文, DobroiuAdrian. サブキャリア変調方式テラヘルツレーダー. 特許. 登録. 国立大学法人東京工業大学. 2019/12/24. 特願2019-232617. 2021/07/08. 特開2021-101167. 特許第7496111号. 2024/05/29 2024.
• 淺田雅洋, 鈴木左文, 田中大基. 高出力テラヘルツ発振器. 特許. 登録. 国立大学法人東京工業大学. 2018/11/19. 特願2018-216285. 2020/06/04. 特開2020-088466. 特許第7088549号. 2022/06/13 2022.
• 鈴木左文, 北川成一郎, 淺田雅洋. 周波数可変テラヘルツ発振器及びその製造方法. 特許. 登録. 国立大学法人東京工業大学. 2014/09/05. 特願2016-517795. 2017/04/20. 再表2015/170425. 特許第6570187号. 2019/08/16 2019.
• 浅田雅洋, 鈴木左文, 杉山　弘樹. 共鳴トンネルダイオードおよびテラヘルツ発振器. 特許. 登録. 国立大学法人東京工業大学, 日本電信電話株式会社. 2012/02/21. 特願2012-034749. 2013/09/02. 特開2013-171966. 特許第5686415号. 2015/01/30 2015.
• 淺田雅洋, 向井　俊和. テラヘルツ検出素子. 特許. 登録. 国立大学法人東京工業大学, ローム株式会社. 2011/04/01. 特願2011-081855. 2012/11/08. 特開2012-216714. 特許第5958890号. 2016/07/01 2016.
• 浅田雅洋, 鈴木左文, 杉山　弘樹, 横山　春喜. 共鳴トンネルダイオードおよびテラヘルツ発振器. 特許. 登録. 国立大学法人東京工業大学, 日本電信電話株式会社. 2011/02/03. 特願2011-021439. 2012/08/23. 特開2012-160686. 特許第5648915号. 2014/11/21 2014.
• 浅田雅洋, 鈴木左文, 杉山　弘樹, 横山　春喜. 共鳴トンネルダイオードおよびテラヘルツ発振器. 特許. 登録. 国立大学法人東京工業大学, 日本電信電話株式会社. 2009/11/26. 特願2009-268458. 2011/06/09. 特開2011-114120. 特許第5445936号. 2014/01/10 2014.
• 西山　伸彦, 浅田雅洋. テラヘルツ波変調装置、信号送信装置及び信号送信方法. 特許. 登録. 国立大学法人東京工業大学. 2008/08/01. 特願2008-199756. 2010/02/18. 特開2010-041204. 特許第5046242号. 2012/07/27 2012.
• 浅田雅洋, 関口　亮太, 尾内　敏彦. レーザ素子. 特許. 公開. 国立大学法人東京工業大学, キヤノン株式会社. 2007/12/25. 特願2007-331275. 2009/07/09. 特開2009-152508. 2009.
• 浅田雅洋, 関口　亮太, 尾内　敏彦. 発振素子、及び検査装置. 特許. 公開. 国立大学法人東京工業大学, キヤノン株式会社. 2007/08/20. 特願2007-213644. 2009/03/05. 特開2009-049692. 2009.
• 浅田雅洋, 関口　亮太, 尾内　敏彦. 発振器. 特許. 公開. 国立大学法人東京工業大学, キヤノン株式会社. 2007/06/08. 特願2007-152375. 2008/12/18. 特開2008-306523. 2008.
• 浅田雅洋, 折橋　直行. テラヘルツ発振素子. 特許. 公開. 国立大学法人東京工業大学. 2005/10/27. 特願2005-313236. 2007/05/17. 特開2007-124250. 2007.

学位論文

• Gain and Loss in Semiconductor Lasers,  本文,  Doctor of Engineering,  東京工業大学,  1984/--/--, 

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