論文

• Kanetake Takasaki, Kiyoshi Irino, Takayuki Aoyama, Youichi Momiyama, Toshiro Nakanishi, Yasuyuki Tamura, Takashi Ito. Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability, Fujitsu Sci. and Tech. Jour., Fujitsu, Vol. 39, No. 1, pp. 40-51, Jan. 2003.
• Kanetake Takasaki, Kiyoshi Irino, Takayuki Aoyama, Youichi Momiyama, Toshiro Nakanishi, Yasuyuki Tamura, Takashi Ito. Impact of Nitrogen Profile in Gate Nitrided-Oxide on Deep-Submicron CMOS Performance and Reliability, FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, Fijitsu, Vol. 39, No. 1, pp. 40-51, 2003.
• Rinji Sugino, Yoshiko Okui, Mayumi Shigeno, Satoshi Okuno, Kanetake Takasaki, Takashi Ito. Dry Cleaning for Fe Contaminants on Si and SiO2 Surfaces with Silicon Chlorides, J. Electrochem. Soc., Vol. 114, No. 11, pp. 3984-3988, 1997.
• Rinji Sugino, Toshiro Nakanishi, Kanetake Takasaki, Takashi Ito. Identification of MOS Gate Dielectric Breakdown Spot Using High Selectivity Cl Radical Etching Technique, Journal of The Electrochemical Society, The Electrochemical Society, Vol. 143, No. 8, pp. 2691-2694, Aug. 1996.
• Takayuki Aoyama, Kunihiro Suzuki, Hiroko Tashiro, Yoko Toda, Tatsuya Yamazaki, Kanetake Takasaki, Takashi Ito. Effect of Fluorine on Boron Diffusion in Thin Silicon Dioxides and Oxynitride, Journal of Applied Physics, American Institute of Physics, Vol. 77, No. 1, pp. 417-419, Sept. 1994.

国際会議発表 (査読有り)

• Rinshi Sugino, Yoshiko Okui, Mayumi Shigeno, Satoshi Ohkubo, Kanetake Takasaki, Takashi Ito. Dry Cleaning of Si and SiO2 Surfaces Using SiC14 System, Proc. Int. Symp. on Semicon. Manufacturing, Proc. Int. Symp. on Semicon. Manufacturing, pp. 262-265, 1995.
• Rinshi Sugino, Toshiro Nakanishi, Kanetake Takasaki, Takashi Ito. Identification of MOS Gate Dielectric-Breakdown Spot Using High-Selectivity Etching, Ext. Abs. of Int. Conf. on SSDM, Ext. Abs. of Int. Conf. on SSDM, 1995.

[ BibTeX 形式で保存 ]    [ 論文・著書をCSV形式で保存 ]    [ 特許をCSV形式で保存 ]