論文

• Kosuke Takenaka, Hibiki Komatsu, Taichi Sagano, Keisuke Ide, Susumu Toko, Takayoshi Katase, Toshio Kamiya, Yuichi Setsuhara. Hydrogen-included Plasma-assisted Reactive Sputtering for Conductivity Control of Ultra-Wide Bandgap Amorphous Gallium Oxide, Jpn. J. Appl. Phys., Vol. 63, pp. 04SP65, Aug. 2024.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Enhancement of thermoelectric properties of SrSi2 films by mixing cubic and trigonal phase, ACS Appl. Energy Mater. 2023, vol. 6, pp. 6593−6597, June 2023.
• Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Hydride anion substitution boosts thermoelectric performance of polycrystalline SrTiO3 via simultaneous realization of reduced thermal conductivity and high electronic conductivity, Adv.Funct. Mater., Vol. 33, 28, p. 2313144, Apr. 2023.
• Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Hydride anion substitution boosts thermoelectric performance of polycrystalline SrTiO3 via simultaneous realization of reduced thermal conductivity and high electronic conductivity, Adv.Funct. Mater., Vol. 33, 28, p. 2313144, Apr. 2023.
• Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Hydride anion substitution boosts thermoelectric performance of polycrystalline SrTiO3 via simultaneous realization of reduced thermal conductivity and high electronic conductivity, Adv.Funct. Mater., Vol. 33, 28, p. 2313144, Apr. 2023.
• Zhongxu Hu, Mari Hiramatsu, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Reversible Thermal Conductivity Modulation of Non-equilibrium (Sn1-xPbx)S by 2D-3D Structural Phase Transition above Room Temperature, ACS Appl. Energy Mater., Vol. 6, pp. 3504, Mar. 2023.
• M. Hiraishi, H. Okabe, A. Koda, R. Kadono, T. Ohsawa, N. Ohashi, Keisuke Ide, Toshio Kamiya, Hideo Hosono. Local electronic structure of dilute hydrogen in Beta-Ga2O3 probed by muons, Phys. Rev. B, Jan. 2023.
• M. Hiraishi, H. Okabe, A. Koda, R. Kadono, T. Ohsawa, N. Ohashi, Keisuke Ide, Toshio Kamiya, Hideo Hosono. Local electronic structure of dilute hydrogen in Beta-Ga2O3 probed by muons, Phys. Rev. B, Jan. 2023.
• Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Masato Sasase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes, Appl. Phys. Lett., Vol. 121, pp. 192108, Nov. 2022.
• Akihiro Shiraishi, Shigeru Kimura, Xinyi He, Naoto Watanabe, Takayoshi Katase, Keisuke Ide, Makoto Minohara, Kosuke Matsuzaki, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors, INORG. CHEM., 61, 6650−6659, Apr. 2022.
• Xinyi He, Jinshuai Chen, Takayoshi Katase, Makoto Minohara, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate, ACS Appl. Mater. Interfaces, 14, 18682–18689, Apr. 2022.
• Kaiwen Li, Atsushi Shimizu, Xinyi He, Keisuke Ide, Kota Hanzawa, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Q. Zhang, Toshio Kamiya. Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate, ACS Appl. Electron. Mater., Vol. 4, pp. 2026, Apr. 2022.
• Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution, Advanced Science, Vol. 9, pp. 202105958, Mar. 2022.
• Yusaku Nishimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya. Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb1−xSnx)Se, Advanced Electronic Materials, 32, 2200024 (1 of 9), Feb. 2022.
• Takayoshi Katase*, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, Toshio Kamiya. Breaking of thermopower – conductivity trade-off in LaTiO3 film around Mott insulator to metal transition, Advanced Science, Vol. 8, pp. 202102097, Oct. 2021.
• Masatoshi Kimura, Xinyi He, Takayoshi Katase*, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure, Nano letters, Vol. 21, pp. 9240-9246, Oct. 2021.
• Xinyi He, Takayoshi Katase*, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Ion substitution effect on defect formation in two-dimensional transition metal nitrides semiconductor, AETiN2 (AE = Ca, Sr, Ba), Inorg. Chem., Vol. 60, pp. 10227-10234, July 2021.
• Loku Singgappulige Rosantha Kumara, Kyohei Ishikawa, Keisuke Ide, Hideo Hosono, Toshio Kamiya, Osami Sakata. Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In-Ga-Zn-O Thin Films Using XAFS and High-Energy XRD, J. Phys. Chem. C, 125, 13619–13628, June 2021.
• Takayoshi Katase, Yudai Takahashi, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Jun-ichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor, lead-tin-selenide, SCIENCE ADVANCES, Vol. 7, pp. eabf2725, Mar. 2021.
• Akira Saitoh, Katsuki Hayashi, Kota Hanzawa, Shigenori Ueda, Shiro Kawachi, Jun-ichi Yamaura, Keisuke Ide, Junghwan Kim, Gregory Tricot, Satoru Matsuishi, Kazuki Mitsui, Tatsuki Shimizu, Masami Mori, Hideo Hosono, Hidenori Hiramatsu. Origins of the coloration from structure and valence state of bismuth oxide glasses, J. NON-CRYST. SOLIDS., 560, 120720-1 - 120720-14, Feb. 2021.
• Chihiro Yamamoto, Xinyi He, Takayoshi Katase, Keisuke Ide, Yosuke Goto, Yoshikazu Mizuguchi, Akane Samizo, Makoto Minohara, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Double charge polarity switching in Sb-doped SnSe with switchable substitution sites, Adv. Funct. Mater., p. 202008092, Dec. 2020.
• Christian A. Niedermeier, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya. Shallow valence band of rutile GeO2 and p-type doping, J. Phys. Chem. C, vol. 124, p. 25721-25728, Nov. 2020.
• Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya. Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3, BaSnO3, and SrTiO3, Phys. Rev. B, 101, 125206-1-10, Mar. 2020.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Thermoelectric (BaxSr1–x)Si2 films prepared by sputtering method over the barium solubility limit, Jpn. J. Appl. Phys., vol. 59, p. SFFB02-1-6, Jan. 2020.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Fabrication and characterization of CaxSr1-x)Si2 films prepared by co-sputtering method, MRS Advances, Jan. 2020.
• Kenji M. Kojima, Masatoshi Hiraishi, Hirotaka Okabe, Akihiro Koda, Rryosuke Kadono, Keisuke Ide, Satoru Matsuishi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono. Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon, Applied Physics Letters, 115, 122104-1-5, Sept. 2019.
• Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor, SrTiN2, Journal of Physical Chemistry C, vol. 123, p. 32, July 2019.
• Chia-En Wu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramastu, Hideo Hosono, Chih-Lung Lin, Toshio Kamiya. New Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Optical Pixel Sensor for Optical Input Signal with Short Wavelength, IEEE Transactions on Electron Devices, vol. 66, p. 3841-3846, July 2019.
• Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Multiple Color Inorganic Thin‐Film Phosphor, RE‐Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature, physica status solidi (a), Vol. 216, No. 5, p. 1700833, Mar. 2019.  公式リンク  
  
• Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Transition Metal‐Doped Amorphous Oxide Semiconductor Thin‐Film Phosphor, Chromium‐Doped Amorphous Gallium Oxide, physica status solidi (a), Vol. 216, no. 5, p. 1800198, Mar. 2019.  公式リンク  
  
• Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide, Phys. Status Solidi A, 216, 1800198, Aug. 2018.
• Zewen Xiao, Fan-Yong Ran, Min Liao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Multiple states and roles of hydrogen in p-type SnS semiconductors, 30, pp. 4498-4502, July 2018.
• Keisuke Ide, * Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening, physica status solidi (a), 1700832, 1-6, Feb. 2018.
• Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya. Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass, ECS Journal of Solid State Science and Technology, Vol. 6, pp. 410-414, May 2017.  公式リンク  
  
• Haochun Tang, Yosuke Kishida, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Satoru Matsuishi, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films, ECS J. Sol. State Sci. Technol., 6, 365-372, May 2017.
• Christian A. Niedermeier, Sneha Rhode, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya, Michelle A. Moram. Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO₃, Physical Review B Rapid Communications, 95, 161202(R)-1 - 6, Apr. 2017.  公式リンク  
  
• Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto, Keisuke Ide, Yoshitake Toda, Shigenori Ueda, Naoki Ohashi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor, NPG Asia Materials, vol. 9, p. e359, Mar. 2017.  公式リンク  
  
• Keisuke Ide, Mitsuho Kikuchi, Masato Ota, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors, Jpn. J. Appl. Phys., Vol. 56, pp. 03BB03-1 - 5, Jan. 2017.
• K.Ide, M. Kikuchi, M. Sasase, H. Hiramatsu, H. Kumomi, H. Hosono, T. Kamiya. Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films, ; Proc. Active-Matrix Flatpanel Displays and Devices (AMFPD2016) (2016 The 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices), Vol. 7-2/298-301, 7-2/298-301, 2017.
• Junghwan Kim, Norihiko Miyokawa, Takumi Sekiya, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O, Thin Solid Films, Vol. 614, pp. 84-89, Sept. 2016.  公式リンク  
  
• Christian A. Niedermeier, Sneha Rhode, Sarah Fearn, Keisuke Ide, Michelle A. Moram, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Solid phase epitaxial growth of high mobility La:BaSnO₃ thin films co-doped with interstitial hydrogen, Appl. Phys. Lett., Vol. 108, pp. 172101-1 -5, 2016.
• Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor, AIP Advances, Vol. 6, p. 015106, 2016.
• Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors, Thin Solid Films, Vol. 614, 73-78, 2016.
• Junghwan KIM, Norihiko MIYOKAWA, Keisuke IDE, Hidenori HIRAMATSU, Hideo HOSONO, Toshio KAMIYA. Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu, J. Cerm. Soc. Jpn., Vol. 124, pp. 532-535, 2016.
• Fan-Yong Ran, Zewen Xiao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya. SnS thin films prepared by H2S-free process and its p-type thin film transistor, AIP Adv., Vol. 6, pp. 015112-1 - 6, 2016.
• Haochun Tang, Kyohei Ishikawa, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya. Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films, J. Appl. Phys., Vol. 118, pp. 205703-1-6, 2015.
• Mutsumi Kimura, Takayuki Hasegawa, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing, IEEE Electron Dev. Lett., Vol. 33, No. 3, pp. 384-386, Feb. 2012.
• Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors, Thin Solid Films, Vol. 520, pp. 3787-3790, 2012.
• Mutsumi Kimura, Takayuki Hasegawa, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono. Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing, Solid-State Electronics, Vol. 75, pp. 74-76, 2012.
• Keisuke Ide, Kenji Nomura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono. Structural relaxation in amorphous oxide semiconductor, J. Appl. Phys, Vol. 111, No. 073513, pp. 1 - 6, 2012.
• Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Mutsumi Kimura, Toshio Kamiya, Hideo Hosono. Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors, Appl. Phys. Lett, Vol. 99, No. 093507, pp. 1 - 3, 2011.

著書

• Toshio Kamiya, Hidenori Hiramatsu, Keisuke Ide, Takayoshi Katase, Hideo Hosono. Exotic Crystal Structures and Electronic Structures in Novel Structured Inorganic Materials, Chapter 6, Novel Structured Metallic and Inorganic Materials, ed. by Yuichi Setsuhara, Toshio Kamiya, and Shin-ichi Yamaura, Springer Nature Singapore Pte Ltd, p. 107-120, July 2019.
• 井手啓介, 片瀬貴義, 野村研二, 雲見日出也, 細野秀雄, 神谷利夫. アモルファス酸化物半導体：In－Ga－Zn－O, 21世紀版薄膜作製応用ハンドブック 4編 2章 光部品 7節 透明導電膜, June 2019.

国際会議発表 (査読有り)

• Y. Tsuruma, K. Yamaguchi, D. Sasaki, E. Kawashima, T. Kadono, K. Ide, T. Katase, M. Kimura, T. Kamiya. Why Poly-OS IGO Exhibits Mobilities > 50cm2/Vs, PRiME 2024, Oct. 2024.
• Tomoya Suzuki, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya. What determines electron effective mass and structural stability in crystalline semiconductors with InGaZnO4 isostructures, IMID 2024, Aug. 2024.
• Zhongxu Hu, Mari Hiramatsu, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Reversible thermal conductivity modulation above room temperature by 2D-3D structural phase transition in non-equilibrium (Sn1-xPbx)S solid solution, STAC - D2MatE 2024, Feb. 2024.
• Atsushi Shimizu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Optimization of deposition parameters for porous a-IGZO thin films using machine learning regression, STAC - D2MatE 2024, Feb. 2024.
• Takayoshi Katase, Xinyi He, Yusaku Nishimura, Keisuke Ide, Hidenori Hiramatsu, Toshio Kamiya. Thermal conductivity modulation using morphotropic phase boundary of 2D-3D chalcogenide semiconductors, The 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture, Oct. 2023.
• Keisuke Ide, Takayoshi Katase, Toshio Kamiya. Amorphous-oxide-semiconductor-based phosphors for inorganic light-emitting diodes, The 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture, Oct. 2023.
• Keisuke Ide, Tasuke Kadono, Atsushi Shimizu, Koji Yamaguchi, Emi Kawashima, Yuki Tsuruma, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Mobility analysis for polycrystalline and amorphous oxide semiconductors using Seto model combined with in-grain scattering factors, The 23rd International Meeting on Information Display, Aug. 2023.
• Atsushi Shimizu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Search of optimal deposition conditions and regression model of a-In-Ga-Zn-O by machine learning, The 23rd International Meeting on Information Display, Aug. 2023.
• Shigeru Kimura, Akihiro Shiraishi, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. High-purity bulk synthesis and electronic properties of a two-dimensional layered semiconductor, alkaline earth transition metal nitrides, Materials Research Meeting 2021, Dec. 2021.
• Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya. Appearance and large enhancement of phonon drag thermopower by epitaxial strain and phonon leaking from LaAlO3 in LaNiO3, Materials Research Meeting 2021, Dec. 2021.
• Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Enhanced thermoelectric figure-of-merit ZT in layered SnSe doped with isovalent Te and its origin clarified by density functional theory, Materials Research Meeting 2021, Dec. 2021.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya. Transport properties of Zn3N2 investigated by ionic liquid gated electric-double-layer transistors, Materials Research Meeting 2021, Dec. 2021.
• Tasuke Kadono, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Fabrication and characterization of resistive random-access memory device using amorphous 12CaO·7Al2O3, Materials Research Meeting 2021, Dec. 2021.
• Shigeru Kimura, Akihiro Shiraishi, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Two-dimensional layered semiconductors AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf); high-purity bulk synthesis and electronic property characterization, 2021 Materials Research Society Fall Meeting & Exhibit, Nov. 2021.
• Masatoshi Kimura, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Large phonon drag thermopower enhancement by epitaxial strain and phonon leaking in LaAlO3 / LaNiO3 / LaAlO3 heterostructure, 2021 Materials Research Society Fall Meeting & Exhibit, Nov. 2021.
• Xinyi He, Chihiro Yamamoto, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Double charge polarity conversion by Sb doping in layered SnSe with switchable substitution sites, 2021 Materials Research Society Fall Meeting & Exhibit, Nov. 2021.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya. Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density, 2021 International Conference on Solid State Devices and Materials (SSDM 2021), Sept. 2021.
• Shigeru Kimura, Akihiro Shiraishi, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Electronic structures and electronic properties of 2-dimensional layered semiconductors, AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf), The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Mari Hiramatsu, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. High electron conductivity and extremely low thermal conductivity of layered SnS semiconductor by geometrical Pb doping, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Origin of high-density hole doping by isovalent Te substitution in SnSe, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Phonon-drag driven giant anisotropic thermopower in epitaxially strained LaNiO3 (110) ultra-thin films, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Keisuke Ide, Yukari Kasai, Akihiro Kato, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Effect of hydrogen doping on transport property of ultrawide bandgap amorphous oxide semiconductor, amorphous Ga-O, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Keisuke Ide, Yukari Kasai, Akihiro Kato, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Effect of hydrogen doping on transport property of ultrawide bandgap amorphous oxide semiconductor, amorphous Ga-O, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Masatoshi Kimura, Yuhi Higuchi, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Strain-induced large power-factor enhancement by breaking thermoelectric trade-off relation in lanthanum nickel oxide, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Takumi Nose, Xinyi He, Haoyun Zhang, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Degenerate hole conduction and ultra-low lattice thermal conductivity of SnSe by nonequilibrium isovalent Te substitution, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Takayoshi Katase, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Junichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. 3D-2D structural phase transition and giant electronic conductivity modulation in non-equilibrium hetero-structural alloy, (Pb1-xSnx)Se, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Ryusei Higuchi, Takayoshi Katase, Kota Hanzawa, Shintaro Yasui, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Thermoelectric properties of non-equilibrium SnSe thin films stabilized by epitaxial strain, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang, Toshio Kamiya. Fabrication of Zn3N2 electric double layer transistor by ionic liquid gating, The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Xinyi He, Tatsuya Cho, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Electronic structures and electro-optical properties of layered oxychalcogenide semiconductor, AE2CuInO3Ch (AE: Alkaline earth, Ch: Chalcogen), The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12), July 2021.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Expansion of Ba and Ca solubility limit into SrSi2 thin film and their thermoelectric properties, 2019 MRS Fall Meeting & Exhibit, Dec. 2019.
• Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Opto-Electrical Properties and Structural Transition in BaSnO3-BaCeO3 Oxide Semiconductor Solid-Solution System, 4th International Conference on Advanced Electromaterials (ICAE 2017), Nov. 2017.
• K. Ide, M. Ota, T. Katase, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, H. Hiramatsu, H. Hosono, T. Kamiya. Effects of film microstructures on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors, International Conference on Materials and Systems for Sustainability (ICMaSS) 2017, Sept. 2017.
• Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Electronic structure of amorphous oxide semiconductor-based light emitting thin film, A-GaOx:Eu, The Tenth International Conference on the Science and Technology for Advanced Ceramics (STAC-10), Aug. 2017.
• Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Sequential structural transition and optoelectronic properties of BaSnO3-BaCeO3 oxide semiconductor solid solution system, The Tenth International Conference on the Science and Technology for Advanced Ceramics (STAC-10), Aug. 2017.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Strain-Induced Modulation of Thermopower and Electrical Conductivity of LaTiO3 Epitaxial Films on LaAlO3 Substrate, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• 渡邉 脩人, 井手 啓介, 金 正煥, 平松 秀典, 片瀬 貴義, 細野 秀雄, 神谷 利夫. Room Temperature Fabricated Multi-Color Liight-Emitting Thin Films Based on Ultra-Wide Bandgap Amorphous Oxide Semiconductor, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• Masato Ohta, Keisuke Ide, Takayoshi Katase, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Growth Dynamics, Annealing Effects, and Microstructure Evolution in Amorphous In-Ga-Zn-O Observed by HAADF STEM, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• Y. Futakado, N. Watanabe, K. Ide, J. Kim, T. Katase, H. Hiramats, H. Hosono, T. Kamiya. Exploration of New Oxide Light-Emitting Semiconductor Thin Films Using Transition Metals, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics, July 2017.
• T. Kamiya, K. Ide, K. Nomura, H. Kumomi, H. Hosono. Structural Relaxation, Crystallization, and Defect Passivation in Amorphous In-Ga-Zn-O, Proc. IDW'13, p. 478, Dec. 2013.
• Hasegwa, T., Kimura, M., Keisuke Ide, Nomura, K., Kamiya, T., HIDEO HOSONO. Light irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor fabricated by high oxygen partial pressure sputtering, Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012, pp. 41-42, 2012.

国内会議発表 (査読有り)

• 木村 公俊, Kuan-Ju Zhou, 井手 啓介, 片瀬 貴義, 平松 秀典, 細野 秀雄, Ting-Chang Chang, 神谷 利夫. 機械学習による多値逆問題解析:アモルファス酸化物半導体トランジスタの欠陥分布・電子輸送を例に, 応用物理学会第71回春季学術講演会, Mar. 2024.
• 鈴木 朝也, 井手 啓介, 片瀬 貴義, 細野 秀雄, 神谷 利夫. 元素置換InGaZnO4の構造安定性と電子構造の支配因子, 応用物理学会第71回春季学術講演会, Mar. 2024.
• 木村公俊, K. Zhou, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, T. Chang, 神谷利夫. 機械学習を用いたアモルファス In-Ga-Zn-O トランジスタの高速特性予測および欠陥解析, 薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」, Nov. 2023.
• 鈴木朝也, 井手啓介, 片瀬貴義, 細野秀雄, 神谷利夫. InGaZnO4 型ホモロガス酸化物における高移動度半導体の設計, 薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」, Nov. 2023.
• 清水篤, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 機械学習による多孔質アモルファス In-Ga-Zn-O 薄膜の成膜条件最適化, 薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」, Nov. 2023.
• 南島悠人, ホシンイ, 井手啓介, 片瀬貴義, 神谷利夫. 第一原理計算による環境調和型熱電変換材料の探索システム構築, 薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」, Nov. 2023.
• 門野太助, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. アモルファス 12CaO・7Al2O3 を用いた ReRAM, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• フゾンシュ, 平松茉莉, ホシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 非平衡(Sn1-xPbx)S固溶体の格子間Snによる高濃度電子ドーピング, 日本セラミックス協会第42回電子材料研究討論会, Nov. 2022.
• 清水篤, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 超高真空スパッタリング装置を用いた高移動度多結晶 Zn3N2 薄膜, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• ホ シンイ, 片瀬貴義, 井手啓介, 細野秀雄, 神谷利夫. ZnO中の水素複合欠陥, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• 嵯峨野太一, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. スパッタリング法によるアモルファス酸化ガリウム薄膜の作製とダイオー ド特性の評価, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• 片瀬貴義, 西村優作, ホ シンイ, 只野央将, 井手啓介, 気谷卓, 半沢幸太, 平松秀典, 川路均, 細野秀雄, 神谷利夫. 準安定(Pb1-xSnx)Se固溶体の2次元-3次元構造転移に伴う熱伝導率変調, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• フゾンシュ, 平松茉莉, ホシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 非平衡(Sn,Pb)S固溶体の合成: 格子間Snによる電子ドーピングと強フォノン散乱, 日本セラミックス協会 第35回秋季シンポジウム, Sept. 2022.
• 樋口龍生, 片瀬貴義, 半沢幸太, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 層状SnSe非平衡相のエピタキシャル膜による安定化と構造・電気特性, 日本セラミックス協会 第35回秋季シンポジウム, Sept. 2022.
• ホシンイ, チェン ジンシュアイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. (111)配向非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜のドメイン境界の電気特性, 日本セラミックス協会 第35回秋季シンポジウム, Sept. 2022.
• 片瀬貴義, ホ シンイ, チェン ジンシュアイ, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 高移動度岩塩型(Sn,Ca)Se準安定相のエピタキシャル薄膜成長とキャリア輸送特性, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, hidenori hiramatsu, HIDEO HOSONO, TOSHIO KAMIYA. Degenerated hole doping and enhanced thermoelectric figure-of-merit ZT in layered SnSe by isovalent Te ion substitution, 第83回応用物理学会秋季学術講演会, Sept. 2022.
• フゾンシュ, 平松茉莉, ホシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. (Sn1-xPbx)S固溶体の非平衡合成と熱・電気特性制御, 応用物理学会第6回フォノンエンジニアリング研究会, July 2022.
• Liwei Li, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya. Local bonding structures in amorphous oxide semiconductors studied by DFT and machine-learning potential, 第60回日本セラミックス協会 セラミックス基礎科学討論会, Jan. 2022.
• 木村茂, ホ シンイ, 片瀬 貴義, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫. 逆ペロブスカイト型酸化物Ba3(Si,Ge)Oの高純度バルク合成と電気特性評価, 薄膜材料デバイス研究会 第18回研究集会, Nov. 2021.
• ホ シンイ, チェン ジンシュアイ, 片瀬 貴義, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫. 300cm2/Vs以上の粒内正孔移動度を示す非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜, 薄膜材料デバイス研究会 第18回研究集会, Nov. 2021.
• 井手啓介, 笠井悠莉華, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 超ワイドギャップアモルファス酸化物半導体を用いたショットキーバリアダイオードの逆バイアス特性, 2021年第68回応用物理学会春季学術講演会, Mar. 2021.
• 高橋 雄大, 片瀬 貴義, ホ シンイ, 只野 央将, 井手 啓介, 吉田 秀人, 河智 史朗, 山浦 淳一, 笹瀬 雅人, 平松 秀典, 細野 秀雄, 神谷 利夫. 準安定(Pb1-xSnx)Se薄膜の2次元-3次元構造転移と巨大電子物性変調, 2021年第68回応用物理学会春季学術講演会, Mar. 2021.
• ホーシンイ, 片瀬貴義, 井手啓介, 細野秀雄, 神谷利夫. Density functional study on electronic structure, defect formation and carrier doping control of AETMN2 (AE=Ca,Sr,Ba, TM=Ti,Zr,Hf), 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 白石明浩, ホー シンイ, 渡邉脩人, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 2次元層状半導体AETMN2 (AE = Sr, Ba, TM = Ti, Zr, Hf)の高純度試料合成と電気・磁気特性, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 長達也, ホーシンイ, 森大介, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 層状半導体AE2CuInO3Ch (AE :アルカリ土類、Ch :カルコゲン)の光電子物性と両極性伝導制御の可能性, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 西村優作, ホーシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 準安定(Pb1-xSnx)Se固溶体バルク試料の合成と2次元-3次元構造転移に伴う巨大電子物性変調, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 木村公俊, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. LaNiO3超薄膜の表面終端処理によるフォノンドラッグ熱電能の増強効果, 薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」, Nov. 2020.
• 木村公俊, 樋口雄飛, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. LaNiO3極薄膜の金属-絶縁体転移に伴う巨大フォノンドラッグ熱電効果の発現, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 加藤昭宏, 笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 超ワイドギャップa-Ga-O薄膜トランジスタへの水素プラズマ処理効果, 薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」, Nov. 2020.
• 橋本幸花, ホーシンイ, 片瀬貴義, 井手啓介, 細野秀雄, 神谷利夫. 超ワイドギャップアルカリ土類酸化物への電子ドーピングの理論的検討, 日本セラミックス協会 第40回電子材料研究討論会, Nov. 2020.
• 片瀬貴義, 樋口雄飛, 木村公俊, 只野央将, 藤岡淳, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. トレードオフの相関を破る酸化物熱電材料の高出力化, 第17回 日本熱電学会学術講演会, Sept. 2020.
• 山本千紘, 半沢幸太, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫:. FeSb2薄膜のヘテロエピタキシャル成長と熱電特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 森大介, 渡邊脩人, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 層状半導体Sr2CuMO3S(M= Ga, In)の合成と光電子物性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 西間木祐紀, 井手啓介, 渡邊脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 希土類添加アモルファス酸化物半導体の電気物性とトランジスタ特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 超ワイドバンドギャップアモルファス酸化物半導体a-Ga-Oを用いたショットキーダイオードの作製, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 井手啓介, 二角勇毅, 渡邉脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. Cr添加アモルファス酸化ガリウム薄膜のフォトルミネッセンス特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 松尾健志, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. ガラス上に成長させた層状セレン化スズ薄膜の電気特性と薄膜トランジスタ, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• ホシンイ, シャオチーウェン, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 第一原理計算による層状 (AE = Ca, Sr, Ba)の電子構造と欠陥生成・キャリアドーピング機構の理論解析, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 樋口雄飛, 井手啓介, Christian A. Niedermeier, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. エピタキシャル歪により増強されるLaNiO3極薄膜のフォノンドラッグ熱電特性, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 渡邊脩人, 井手啓介, 片瀬貴義, 笹瀬雅人, 戸田喜丈, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化物半導体をホストとする蛍光体を用いた直流駆動型発光素子の室温形成, 薄膜材料デバイス研究会 第15回研究集会, Nov. 2018.
• 二角勇毅, 渡邉脩人, 井手啓介, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. 遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索, 第56回 セラミックス基礎科学討論会, Jan. 2018.
• 井手 啓介, 岸田 陽介, 片瀬 貴義, 平松 秀典, 上田 茂典, 雲見 日出也, 細野 秀雄, 神谷 利夫. アモルファス酸化物半導体の価電子帯直上欠陥の分離, 第78回 応用物理学会秋季学術講演会, Sept. 2017.

国際会議発表 (査読なし・不明)

• Toshio Kamiya, Masatoshi Kimura, Keisuke Ide, Takayoshi Katase. Tandem neural network for direct solution of multivalued inverse problem, The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture (DEJI2MA2024), Oct. 2024.
• Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya. Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density, 2021 International Conference on Solid State Devices and Materials (SSDM 2021), Sept. 2021.
• Toshio Kamiya, Xinyi He, Zewen Xiao, Keisuke Ide, Takayoshi Katase, Hideo Hosono. Structures and Electronic States of Hydrogen in Inorganic Semiconductors with Different Anions, Materials Research Meeting 2019, Dec. 2019.
• Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya. Single crystal growth and intrinsic electron mobility of cubic SrGeO3, Materials Research Meeting 2019, Dec. 2019.
• Keisuke Ide, Yurika Kasai, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Hydrogen doping in ultra-widegap amorphous oxide semiconductor, amorphous Ga-O, Materials Research Meeting 2019, Dec. 2019.
• Naoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Light emitting diodes on glass using amorphous oxide semiconductor thin-film phosphors, rare-earth doped a-Ga-O, Materials Research Meeting 2019, Dec. 2019.
• Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Density Functional Study on Defects and Doping for Layered Ternary Nitride, SrTiN2, Materials Research Meeting 2019, Dec. 2019.
• Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Structural phase transition and opto-electronic properties of oxide semiconductor solid solution, (Ba,Sr)(Sn,Ti)O3, Materials Research Meeting 2019, Dec. 2019.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Enhanced thermoelectric power-factors by strain control in stongly correlated lanthunum titanate, Materials Research Meeting 2019, Dec. 2019.
• Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Low-temperature fabrication of phosphor thin-film and light emitting device using amorphous oxide semiconductor, International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019), Nov. 2019.
• Tatsuya Cho, Daisuke Mori, Xiyi He, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Synthesis and opto-electronic properties of layered oxychalcogenides, AE2CuInO3Ch (AE = Ca, Sr, Ba, and Ch = S, Se, Te), 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Keisuke Ide, Yuki Nishimagi, Naoto Watanabe, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Optoelectrical properties and thin-film transistor operation of rare-earth-doped amorphous oxide semiconductors, 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Masatoshi Kimura, Yuhi Higuchi, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Epitaxial structure and thickness dependent phonon-drag thermoelectric properties of LaNiO3 thin film on LaAlO3 (001) substrate, 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Yuhi Higuchi, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Biaxial-strain induced power-factor enhancement in metallic strongly correlated transition metal oxide LaNiO3, 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya. Single crystal growth of cubic SrGeO3 and estimation of intrinsic electron mobility, 11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11), Oct. 2019.
• Masashi Kurosawa, Masaya Nakata, Keisuke Ide, Takayoshi Katase, Toshio Kamiya. Temperature dependence of thermoelectric properties of Ge1−xSnx layers grown by molecular beam epitaxy, The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4), Oct. 2019.
• Keisuke Ide, Yurika Kasai, Kosuke Takenaka, Yuichi Setsuhara, Atsushi Hiraiwa, Hiroshi Kawarada, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Effect of hydrogen plasma treatment for ultra-wide bandgap amorphous oxide semiconductor, amorphous Ga-O, The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4), Oct. 2019.
• Takayoshi Katase, Yuhi Higuchi, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Epitaxial structure and phonon-drag thermoelectric properties of strain controlled LaNiO3 thin films, The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4), Oct. 2019.
• Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya. SrGeO3 single crystal growth and optical phonon spectrum analysis, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Epitaxial strain-induced enhancement of thermoelectric power-factors, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Transition Metal-Doped Amorphous Oxide Semiconductor Thin-Film Phosphor, Chromium-Doped Amorphous Gallium Oxide, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Yurika Kasai, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Hydrogen doping and carrier transport properties of amorphous Ga-O, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Naoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor", SrTiN2, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Chihiro Yamamoto, Kota Hanzawa, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Epitaxial structure and phonon-drag thermoelectric properties of FeSb2 thin film on SrTiO3 (001) substrate, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Yuhi Higuchi, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Power-factor enhancement by breaking trade-off relation of thermopower and electrical conductivity in epitaxially strained lanthanum nickelate, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Structural phase transition and optoelectronic properties of Ba(Sn,Ce)O3 oxide semiconductor solid-solution system, The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11), July 2019.
• Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo. Thermoelectric property of MxSr1-xSi2 (M = Ca, Ba) film prepared by co-sputtering method, The Fifth Asia-Pacific Conference on Semiconducting Silicates and Related Materials, July 2019.
• T. Kamiya, K. Ide, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, T. Katase, H. Hiramatsu, H. Hosono. Device characteristics of rare-earth doped amorphous oxide semiconductors, The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3), Sept. 2018.
• Keisuke Ide, Masato Ota, Takayoshi Katase, Hidenori Hiramatsu, Shigenori Ueda, Hideo Hosono, Toshio Kamiya. Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O, Americas international Meeting on Electrochemistry and Solid state science (AiMES), Sept. 2018.
• Yasuo Azuma, Yusaku Kobayashi, Keisuke Ide, Takayoshi Katase, Toshio Kamiya. Electrical characteristics of microfabricatd ferromagneticl material La0.67Sr0.33MnO3, The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development, Sept. 2018.
• T. Katase, K. Ide, H. Hiramatsu, H. Hosono, T. Kamiya. Electric double layer transistor and electron-transport properties of (Tl,K)2Fe4Se5 thin films, The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3), Sept. 2018.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Phonon-drag thermopower of epitaxially strained LaTiO3 thin films, International Conference on Materials and Systems for Sustainability 2017, Sept. 2017.
• Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Thermopower and electron carrier transport properties of epitaxially strained Nb-doped LaTiO3 thin films, The Tenth International Conference on the Science and Technology for Advanced Ceramics (STAC-10), Aug. 2017.
• T. Katase, K. Ide, H. Hiramatsu, H. Hosono, T. Kamiya. Strain-induced modulation of thermopower and electrical conductivity of LaTiO3 epitaxial films on LaAlO3 substrate, 10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-10), July 2017.

国内会議発表 (査読なし・不明)

• K. Zhou, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, B. Huang, P. Yen, T. Chang, S. M. Sze. Suppressing Hydrogen Diffusion and Enhancing Reliability of Short-Channel InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering, 薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」, Nov. 2022.
• 片瀬貴義, ホ シンイ, チェン ジンシュアイ, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. (111)配向非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜のドメイン境界の電気特性, 日本セラミックス協会第42回電子材料研究討論会, Nov. 2022.
• 片瀬貴義, ホ シンイ, チェン ジンシュアイ, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 準安定(Pb1-xSnx)Se固溶体の合成：2次元-3次元構造転移の誘起と電気・熱伝導率変調, 日本セラミックス協会第42回電子材料研究討論会, Nov. 2022.
• 加藤昭宏, 笠井悠莉華, 井手啓介, 片瀬貴義, 平松 秀典, 細野 秀雄, 神谷 利夫. 水素ドープアモルファス酸化ガリウムを用いた薄膜トランジスタ, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 山本 千紘, ホ シンイ, 橋本 幸花, 片瀬 貴義, 井手 啓介, 平松 秀典, 上田 茂典, 細野 秀雄, 神谷 利夫. Sb添加SnSeのゼーベック・ホール係数の二重極性反転機構, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 渡邉 脩人, 白石 明浩, ホ シンイ, 片瀬 貴義, 井手 啓介, 松崎 功佑, 平松 秀典, 細野 秀雄, 神谷 利夫. 層状結晶半導体SrTiN2の高純度試料合成と光電子輸送特性, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 木村 公俊, 樋口 雄飛, 片瀬 貴義, 蓑原 誠人, 麻生 亮太郎, 吉田 秀人, 井手 啓介, 平松 秀典, 上田 茂典, 組頭 広志, 細野 秀雄, 神谷 利夫. モット絶縁体LaNiO3超薄膜に発現する巨大フォノンドラッグ熱電効果, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 樋口 雄飛, 片瀬 貴義, 只野 央将, 藤岡 淳, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫. 熱起電力と導電率のトレードオフの関係を破る酸化物熱電材料LaNiO3の高出力特性, 第67回応用物理学会春季学術講演会, Mar. 2020.
• 片瀬貴義, 樋口雄飛, 只野 央将, 藤岡 淳, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫. トレードオフの相関を破る酸化物熱電材料の高出力特性, 応用物理学会新領域、第10回強的秩序とその操作に関わる研究グループ研究会, Jan. 2020.
• Takayoshi Katase, Yuhi Higuchi, Terumasa Tadano, Jun Fujioka, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Power-factor enhancement by breaking trade-off relation of electrical conductivity and thermopower in strain-controlled transition metal oxide, 日本セラミックス協会 第58回セラミックス基礎科学討論会, Jan. 2020.
• 青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井手啓介, 片瀬貴義, 神谷利夫, 舟窪浩. 二元同時スパッタ法で作製したAeSi2 膜(Ae= Ca, Sr, Ba)の構成相と電気特性, 日本セラミックス協会 第58回セラミックス基礎科学討論会, Jan. 2020.
• 山本千紘, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 層状SnSeへのSbドーピングと二重極性反転現象, 日本セラミックス協会 第58回セラミックス基礎科学討論会, Jan. 2020.
• 井手啓介, 金正煥, 片瀬貴義, 細野秀雄, 神谷利夫. アモルファス酸化物半導体を用いた新規デバイスの開拓, 薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」, Nov. 2019.
• 木村公俊, 樋口雄飛, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. LaNiO3エピタキシャル極薄膜に発現する巨大フォノンドラッグ熱電能, 応用物理学会結晶工学分科会・電子材料若手交流会共催 第2回結晶工学xISYSE 合同研究会, Nov. 2019.
• ホシンイ, 長達也, 森大介, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 層状半導体AE2CuInO3Ch (AE = Ca,Sr,Ba, Ch =S,Se,Te)の光電子輸送特性, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 片瀬貴義, 樋口雄飛, 木村公俊, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. 引張歪から圧縮歪まで制御したLaNiO3薄膜の構造とフォノンドラッグ熱電特性, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 山本千紘, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫. アンチモン添加による層状セレン化スズの二重極性反転, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化ガリウム薄膜への電子ドーピングとショットキーダイオード, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 井手啓介, 渡邉脩人, 片瀬貴義, 笹瀬雅人, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫. 希土類添加アモルファス酸化物蛍光体薄膜の作製と発光素子への応用, 日本セラミックス協会 第39回電子材料研究討論会, Nov. 2019.
• 笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化ガリウムを用いたショットキーバリアダイオード特性と光応答, 薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」, Nov. 2019.
• Kaiwen Li, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Dong Lin, Jinhua Ren, Qun Zhang. Silicon doping and N2 ambient annealing effects on Zn3N2 thin film transistors, 薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」, Nov. 2019.
• 青山 航大, 清水 荘雄, 倉持 豪人, 召田 雅実, 秋池 良, 井手 啓介, 片瀬 貴義, 神谷 利夫, 木村 好里, 舟窪 浩. 二元同時スパッタ法で作製したAeSi2膜の作製, 第80回応用物理学会秋季学術講演会, Sept. 2019.
• Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya. Density functional study on intrinsic and impurity defect formation in layered SrTiN2, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 青山 航大, 清水 荘雄, 倉持 豪人, 召田 雅実, 秋池 良, 井手 啓介, 片瀬 貴義, 神谷 利夫, 木村 好里, 舟窪 浩. 共スパッタ法で作製したBaxSr1-xSi2膜の熱電特性, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 渡邉脩人, 井手啓介, 片瀬貴義, 笹瀬雅人, 戸田喜丈, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化物半導体a-GaOxをホストとする蛍光体を用いた直流駆動型発光素子の低温作製, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 笠井悠莉華, 井手啓介, 片瀬貴義, 平松 秀典, 細野 秀雄, 神谷 利夫. アモルファス酸化ガリウムへの水素ドープ効果とキャリア輸送特性, 第66回応用物理学会春季学術講演会, Mar. 2019.
• 西間木祐紀, 井手啓介, 渡邉脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫. アモルファス酸化物半導体薄膜トランジスタの希土類添加効果, 第57回セラミックス基礎科学討論会, Jan. 2019.
• 青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井手啓介, 片瀬貴義, 神谷利夫, 木村好里, 舟窪 浩. 共スパッタ法で作製したBaxSr1-xSi2膜の作製と熱電特性評価, 第57回セラミックス基礎科学討論会, Jan. 2019.
• 井手 啓介, 太田 雅人, 岸田 陽介, 片瀬 貴義, 平松 秀典, 上田 茂典, 雲見 日出也, 細野 秀雄, 神谷 利夫. [講演奨励賞受賞記念講演] 全反射硬X線光電子分光法によるアモルファス酸化物半導体の価電子帯直上欠陥の深さ方向分布, 第65回応用物理学会春季学術講演会, Mar. 2018.

その他の論文・著書など

• Keisuke Ide, Kenji Nomura, Hideo Hosono, Toshio Kamiya. Electronic Defects in Amorphous Oxide Semiconductors, A Review; Phys. Status Solidi A, 216, 1800372, 2018.

学位論文

• Study on defects in amorphous oxide semiconductor, a-In-Ga-Zn-O,  Exam Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2017/09/30,   
• Study on defects in amorphous oxide semiconductor, a-In-Ga-Zn-O,  Outline,  Doctor (Engineering),  Tokyo Institute of Technology,  2017/09/30,   
• Study on defects in amorphous oxide semiconductor, a-In-Ga-Zn-O,  Thesis,  Doctor (Engineering),  Tokyo Institute of Technology,  2017/09/30, 
• Study on defects in amorphous oxide semiconductor, a-In-Ga-Zn-O,  Summary,  Doctor (Engineering),  Tokyo Institute of Technology,  2017/09/30,   

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