論文

• Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Aware Cell Design for p/n-Vertically-Integrated Nanowire on FinFET beyond 3-nm Technology Node, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Jpn. J. Appl. Phys., Vol. 59, pp. SGGB06-1-6, Feb. 2020.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films, Japanese Journal of Applied Physics, Vol. 59, No. SG, Feb. 2020.

国際会議発表 (査読有り)

• Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-Heating-Aware Cell Design for Multi-Stacked Circuits with p/n-Vertically-Integrated Nanowires on FinFET, Int. Conf. on Solide State Devices and Materials (SSDM2019), Sept. 2019.
• Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. Endurance Improvement in Ferroelectric Y-doped HfO2 Thin Films on NiSi2 with Low-Thermal Budget Processing, Solid State Devices and Materials (SSDM2019), Sept. 2019.

国際会議発表 (査読なし・不明)

• J. Molina, T. Mimura, Y. Nakamura, T. Shimizu, H. Funakubo, I. Fujiwara, T. Hoshii, S. Ohmi, A. Hori, H. Wakabayashi, K. Tsutsui, K. Kakushima. Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance, 2020 IMW (The 12th International Memory Workshop), May 2020.
• Joel Molina-Reyes, Haruki Iwatsuka, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima. NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing, VLSI 2019 (2019 Symposia on VLSI Technology and Circuits), June 2019.

国内会議発表 (査読なし・不明)

• Peilong Wang, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi. Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs, 70th JSAP Spring meeting, Mar. 2023.
• 松浦 賢太朗, 濱田 昌也, 濱田 拓也, 谷川 晴紀, 坂本 拓朗, 堀 敦, 宗田 伊理也, 川那子 高暢, 角嶋 邦之, 筒井 一生, 小椋 厚志, 若林 整. 大面積集積化に向けたスパッタ堆積ノーマリーオフMoS2-nMISFETs, 第67回応用物理学会春期学術講演会, Mar. 2020.
• 山岸 朋彦, 堀 敦, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整. 横型p/n積層ナノワイヤによるNORとNANDセルの省面積設計, 第80回応用物理学会秋季学術講演会, Sept. 2019.

特許など

• 堀敦, 若林整, 伊藤浩之, 日向寺　朗, 亘理　誠夫, 新田　元. センシングシステム、センサ端末. 特許. 登録. 国立大学法人東京工業大学. 2019/01/31. 特願2019-015545. 2020/08/13. 特開2020-123216. 特許第7217000号. 2023/01/23 2023.

学位論文

• 0.05umCMOSデバイス技術に関する研究,  本文,  博士(工学),  東京大学, 

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