論文

• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Experimental study of electron mobility characterization in direct contact La-silicate/Si structure based nMOSFETs, Solid-State Electronics, Vol. 74, pp. 2-6, Aug. 2012.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Natori, HIROSHI IWAI. Gate Capacitance Modeling and Diamater-Drpendent Performance of Nanowire MOSFETs, IEEE Transactions on Electron Deviices, Vol. 59, No. 4, pp. 1037-1045, Apr. 2012.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. EOT of 0.62 nm and High Electron Mobility in La-silicate/Si Structure Based nMOSFETs Achieved by Utilizing Metal-Inserted Poly-Si Stacks and Annealing at High Temperature, IEEE Transactions on Electron Devices, Vol. 59, No. 2, pp. 269-276, Feb. 2012.
• Takamasa Kawanago, 鈴木 拓也, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process, Solid-State Electronics, Vol. 68, pp. .68-72, Feb. 2012.
• Yeonghun Lee, KENJI NATORI, HIROSHI IWAI, Kuniyuki KAKUSHIMA, Kenji Shiraishi. Size-Dependent Properties of Ballistic Silicon Nanowire Field Effect Transistors, Journal of Applied Physics, Vol. 107, No. 11, pp. 113705, June 2010.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors, Applied Physics Letters97, 1, 2010.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors, Applied Physics Letters97, 1, ????,2010, 97, 1, 2010.

国際会議発表 (査読有り)

• Soshi Sato, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, Kenji Ohmori, KENJI NATORI, Keisaku Yamada, HIROSHI IWAI. Gate Semi-Around Si Nanowire FET Fabricated by Conventional CMOS Process with Very High Drivability, ESSDERC 2010, 40th European Solid-State Device Research Conference, Sept. 2010.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, KENJI NATORI, takeo hattori, HIROSHI IWAI. Optimized Oxygen Annealing Process for Vth Tuning of p-MOSFET with High-k/Metal Gate Stacks, ESSDERC 2010, 40th European Solid-State Device Research Conference, Sept. 2010.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Systematic Study on Size Dependences of Transport Parameters for Ballistic Nanowire-FET with Effective Mass Approximation, 2009 International Conference on Solid Sate Devices and Materials, E-7-5, Oct. 2009.

国内会議発表 (査読有り)

• Yeonghun Lee, Kuniyuki KAKUSHIMA, KENJI NATORI, HIROSHI IWAI. Cross-Sectional Distribution of Phonon-Limited Electron Mobility in Rectangular Silicon Nanowire Field Effect Transistors, 2011 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY, Jan. 2011.

国際会議発表 (査読なし・不明)

• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Characterization of Effective Electron Mobility in n/MOSFETs with Direct Contact La-silicate/Si Structure, 15th International Conference on Thin Films, 2013.
• W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI. Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~, 2011 IEDM, 2013.
• Takamasa Kawanago, Yeonghun Lee, Kuniyuki KAKUSHIMA, Ahmet Parhat, KAZUO TSUTSUI, 西山彰, Nobuyuki Sugii, Kenji Natori, takeo hattori, HIROSHI IWAI. Metal Inserted Poly-Si wirh High Temperature Annealing for Achieving EOT of 0.62nm in La-silicate MOSFET, 41st European Solid-State Device Research Conference, 2013.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, Akira Nishiyama, 杉井信之, KAZUO TSUTSUI, Kenji Natori, takeo hattori, HIROSHI IWAI. Size dependent phonon limited electron mobility of Si nanowire, G-COE PICE International Symposium and IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices: Prospects by World’s Leading Scientists, 2013.
• 大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
• 大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
• 大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Natori, HIROSHI IWAI. Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Michihiro Hosoda, Yeonghun Lee, Kuniyuki KAKUSHIMA, パールハットアヘメト, KAZUO TSUTSUI, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, HIROSHI IWAI. Size-dependent phonon-limited electron mobility in Si Nanowire MOSFETs, IEEE EDS MQ WIMNACT 32 C0-sponsored by EDS Japan Chapter and TIT, 2012.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, KENJI NATORI, HIROSHI IWAI. Corner Effects on Phonon-Limited Mobility in Rectangular Si Nanowire MOSFETs, Taiwan-Japan Workshop on “Nano Devices”, 2011.

国内会議発表 (査読なし・不明)

• 細田倫央, 李映勲, 角嶋邦之, パールハットアヘメト, 筒井一生, 西山彰, 杉井信之, 名取研二, 岩井洋. 矩形断面SiナノワイヤMOSFETにおけるフォノン散乱に制限された移動度のサイズ依存性, 第72回応用物理学会学術講演会, 2011.
• 李映勲, 角嶋邦之, 白石賢二, 名取研二, 岩井洋. バリスティックナノワイヤトランジスタ性能の太さ依存における状態密度と静電容量のトレードオフ, 第７１回応用物理学会学術講演会, Sept. 2010.
• 李映勲, 角嶋邦之, 白石賢二, 名取研二, 岩井洋. バリスティックSiナノワイヤトランジスタの電気特性の直径依存性, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-272, Mar. 2010.
• 李映勲, 角嶋邦之, 名取研二, 岩井洋. Diameter-dependent injection velocity of ballistic Si nanowire MOSFETs, 複合創造領域シンポジウム, 2010.
• Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Size-Dependent Transport Characteristics of Ballistic Silicon Nanowire FETs, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
• 李映勲, 永田貴弘, 角嶋邦之, 白石賢二, 名取研二, 岩井洋. 引っ張り歪みSiナノワイヤの電子構造とバリスティック伝導, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 902, Mar. 2009.
• 李映勲, 永田 貴弘, 白石 賢二, 角嶋邦之, 岩井洋. 第一原理計算によるシリコンナノワイヤの電子構造解析, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 766, Sept. 2008.

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