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Publication List - HIROSHI FUNAKUBO 2006 (108 / 2042 entries)
Journal Paper
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Yong Kwan Kim,
Shintaro Yokoyama,
Risako Ueno,
Hitoshi Morioka,
OSAMI SAKATA,
Shigeru Kimura,
Keisuke Saito,
Hiroshi Funakubo.
Observation of Domain Switching in Fatigued Epitaxial Pb(Zr,Ti)O3 Thin Films,
Mater. Res. Soc. Symp. Proc.,
Vol. 902E,
pp. 0902-T10-67.1-6.,
2006.
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Yong Kwan Kim,
Akihiro Sumi,
Kenji Takahashi,
Shintaro Yokoyama,
Shinichi Ito,
Takayuki Watanabe,
Kensuke Akiyama,
Satoru Kaneko,
Keisuke Saito,
Hiroshi Funakubo.
Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO3 Films on (100)SrTiO3 substrates,
Jpn. J. Appl. Phys.,
Vol. 45,
No. 01,
pp. L36-L38.,
2006.
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Gouji Asano,
Tsukasa Satake,
Kunio Ohtsuki,
Hiroshi Funakubo.
In situ FTIR investigation of the effect of gas-phase reaction on the deposition of Pb(Zr,Ti)O3 films by MOCVD,
Thin Solid Films,
Vol. 498,
pp. 277-281,
2006.
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Kenji Takahashi,
Muneyasu Suzuki,
Mamoru Yoshimoto,
Hiroshi Funakubo.
Growth Behavior of c-Axis-Oriented Epitaxial SrBi2Ta2O9 Films on SrTiO3 Substrates with Atomic Scale Step Structure,
Jpn. J. Appl. Phys.,
Vol. 45,
No. 5,
pp. L138-141,
2006.
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Satoru Kaneko,
Kensuke Akiyama,
Yoshitada Shimizu,
Yasuo Hirabayashi,
Seishiro Ohya,
Hiroshi Funakubo,
Mamoru Yoshimoto.
Structural modulation in bismuth cuprate superconductor observed by X-ray reciprocal space mapping,
Journal of Crystal Growth,
Vol. 287,
pp. 483-485,
2006.
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Kensuke Akiyama,
Satoru Kaneko,
Yasuo Hirabayashi,
Takashi Suemasu,
Hiroshi Funakubo.
Horizontal growth of epitaxial (100) β-FeSi2 templates by metal–organic chemical vapor deposition,
Journal of Crystal Growth,
Vol. 287,
pp. 694-697,
2006.
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Kensuke Akiyama,
Yasuo Hirabayashi,
Satoru Kaneko,
Takeshi Kimura,
Shintaro Yokoyama,
Hiroshi Funakubo.
Effect of template layer on formation of flat-surface -FeSi2 epitaxial films on (111) Si by Metal-organic chemical vapor deposition,
Journal of Crystal Growth,
Vol. 289,
pp. 37-43,
2006.
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Hiroshi Funakubo,
Akihiro Sumi,
Hitoshi Morioka,
Shoji Okamoto,
Shintaro Yokoyama.
DOMINANT FACTOR OF SQUARENESS IN P-E HSYTERESIS LOOPS OF MOCVD-PZT FILMS,
Mater. Res. Soc. Symp. Proc.,
Vol. 902E,
pp. 0902-T04-04.1-6,
2006.
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Muneyasu Suzuki,
Kenji Takahashi,
Takayuki Watanabe,
Tadashi Takenaka,
Hiroshi Funakubo.
Dielectric Property Controls Using Crystal Structure Anisotropy In Bismuth Layer-Structured Dielectrics,
Mater. Res. Soc. Symp. Proc.,
Vol. 902E,
pp. 0902-T02-06.1-6.,
2006.
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Shintaro Yokoyama,
Satoshi Okamoto,
Keisuke Saito,
Takashi Iijima,
Hirotake Okino,
Takashi Yamamoto,
Ken Nishida,
Takashi Katoda,
Joe Sakai,
Hiroshi Funakubo.
Characteristic Comparison Of Epitaxial PZT And PMN-PT Films Grown On (100)cSrRuO3//(100)SrTiO3 Substrates By Metalorganic Chemical Vapor Deposition,
Mater. Res. Soc. Symp. Proc.,
Vol. 902E,
pp. 0902-T03-29.1-6.,
2006.
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Kenji Takahashi,
Muneyasu Suzuki,
Mamoru Yoshimoto,
Hiroshi Funakubo.
Initial Growth Behavior of Ultra-Thin c-Axis-Oriented Epitaxial SrBi2Ta2O9 films on SrTiO3,
Mater. Res. Soc. Symp. Proc.,
Vol. 902E,
pp. 0902-T03-39.1-6.,
2006.
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Hirotake Okino,
Masahiro Hayashi,
Takashi Iijima,
Shintaro Yokoyama,
Hiroshi Funakubo,
Nava Setter,
Takashi Yamamoto.
Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO2/Si System Investigated by Finite Element Method: Material-Constant Dependences,
Mater. Res. Soc. Symp. Proc.,
Vol. 902E,
pp. 0902-T03-49.1-6.,
2006.
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Hiroshi Uchida,
Shintaro Yasui,
Risako Ueno,
Hiroshi Nakaki,
Ken Nishida,
Minoru Osada,
Hiroshi Funakubo,
Takashi Katoda,
Seiichiro Koda.
Ion Modification for Improvement of Electrical Properties of Perovskite-based Ferroelectric Thin Films Fabricated by Chemical Solution Deposition Method,
Mater. Res. Soc. Symp. Proc.,
Vol. 902E,
pp. 0902-T04-10.1-6.,
2006.
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Kenji Takahashi,
Muneyasu Suzuki,
Takahiro Oikawa,
Takashi Kojima,
Takayuki Watanabe,
Hiroshi Funakubo.
MOCVD of Single-Axis c-Oriented Strontium Bismuth Titanate Thin Films and Their Electrical Properties,
Chem. Vap. Deposition,,
Vol. 12,
pp. 136-142.,
2006.
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Tohru Higuchi,
Takeyo Tsukamoto,
Takeshi Hattori,
Yoshihisa Honda,
Shintaro Yokoyama,
Hiroshi Funakubo.
Electronic Structure in the Valence Band of (Pb, La)(Zr, Ti)O3 Thin Films Probed by Soft-X-Ray Emission Spectroscopy,
Trans. Mater. Res. Soc. Jpn.,
Vol. 31,
No. 1,
pp. 23-26,
2006.
-
Ken Nishida,
Minoru Osada,
Shintaro Yokoyama,
Kenji Takahashi,
Hiroshi Funakubo,
Takashi Katoda.
Investigation of Domain Distribution in Patterned PZT Thin Films Using Raman Spectroscopy,
Trans. Mater. Res. Soc. Jpn.,
Vol. 31,
No. 1,
pp. 27-30.,
2006.
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Muneyasu Suzuki,
Takayuki Watanabe,
Tadashi Takenaka,
Hiroshi Funakubo.
MOCVD growth of epitaxial pyrochlore Bi2Ti2O7 thin film,
J. European Ceram. Soc.,
Vol. 26,
2155-2159.,
2006.
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Minoru Osada,
Yasuo Ebina,
Hiroshi Funakubo,
Shintaro Yokoyama,
Takanori Kiguchi,
Kazunori Takada,
Takayoshi Sasaki.
High-k Dielectric Nanofilms Fabricated from Titania Nanosheets”,,
Advanced Materials,,
Vol. 18,
pp. 1023-1027.,
2006.
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S. K. Singh,
Y. K. Kim,
H. Funakubo,
H. Ishiwara.
Epitaxial BiFeO3 thin films fabricated by chemical solution deposition,
Appl. Phys. Lett.,,
Vol. 88,
pp. 162904-1-3.,
2006.
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Kazuhisa Kawano,
Atsushi Nagai,
Hiroaki Kosuge,
Tetsuo Shibutami,
Noriaki Oshima,
Hiroshi Funakubo.
Seed Layer Free Conformal Ruthenium Film Deposition on Hole Substrates by MOCVD Using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium,
Electrochem. Solid-State Lett.,
Vol. 9,
No. 7,
pp. C107-C109,
2006.
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Yong Kwan Kim,
Hitoshi Morioka,
Risako Ueno,
Shintaro Yokoyama,
Hiroshi Funakubo,
Kilho Lee,
Sunggi Baik.
Domain structures and piezoelectric properties in epitaxial Pb(Zr0.35,Ti0.65)O3 thin films,
Appl. Phys. Lett.,,
Vol. 88,
pp. 252904-1-3.,
2006.
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Yong Kwan Kim,
Hitoshi Morioka,
Shoji Okamoto,
Shintaro Yokoyama,
Hiroshi Funakubo.
“Intrinsic Properties of (100)/(001)-Oriented Epitaxial PZT Thin Films Grown on (100)Si and (100)SrTiO3 Substrates”,
Integ. Ferro.,
Vol. 78,
pp. 223-232.,
2006.
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K. Nishida,
M. Osada,
S. Wada,
S. Okamoto,
R. Ueno,
H. Funakubo,
T. Katoda.
A New Method to Characterize a Relative Volume to the c-Domain in PZT Films Based on Raman Spectra,
Integ. Ferro.,
Vol. 78,
pp. 281-287.,
2006.
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Shintaro Yokoyama,
Satoshi Okamoto,
Shoji Okamoto,
Takashi Iijima,
Keisuke Saito,
Hirotake Okino,
Takashi Yamamoto,
Hiroshi Funakubo.
Crystal Orientation Anisotropy of Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 Thick Films Grown by MOCVD,
Integ. Ferro.,
Vol. 80,
pp. 67-76.,
2006.
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Hiroshi Funakubo,
Atsushi Nagai,
Jun Minamidate,
June Mo Koo,
Suk Pil Kim,
Youngsoo Park.
Trial for Making Three Dimensional PZT Capacitor for High Density Ferroelectric Random Access Memory,
Integ. Ferro.,
Vol. 81,
pp. 219-226.,
2006.
-
Jun Minamidate,
Atsushi Nagai,
Hiroki Kuwabara,
Hiroshi Funakubo,
June Mo Koo,
Suk Pil Kim,
Youngsoo Park.
Investigation of Sr-Ru-O/Ru Multilayer-Electrodes Prepared by MOCVD,
Integ. Ferro.,
Vol. 81,
pp. 249-260.,
2006.
-
Kensuke Akiyama,
Satoru Kaneko,
Yasuo Hirabayashi,
Hiroshi Funakubo.
Photoluminescence properties of Si/-FeSi2/Si double heterostructure,
Thin Solid Films,
Vol. 508,
380-384.,
2006.
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Jun Minamidate,
Atsushi Nagai,
Sukpil Kim,
June-mo Koo,
Sangmin Shin,
Youngsoo Park,
Hiroshi Funakubo.
Formation of Stoichiometric SrRuO3 Electrodes for PZT Capacitors by Pulsed-MOCVD,
Electrochem. Solid-State Lett.,
Vol. 9,
No. 10,
C164-C166.,
2006.
-
Yong Kwan Kim,
Hitoshi Morioka,
Hiroshi Funakubo.
Fatigue Properties of Epitaxial Pb(Zr0:35Ti0:65)O3 Films with Various Volume Fractions of 90° Domains Grown on (100)cSrRuO3/(100)SrTiO3 Substrates,
Jpn. J. Appl. Phys.,
Vol. 45,
No. 8A,
pp. 6382-6384.,
2006.
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Hiroshi Uchida,
Risako Ueno,
Hiroshi Funakubo,
Seiichiro Koda.
Crystal structure and ferroelectric properties of rare-earth substituted BiFeO3 thin films,
Jpn. J. Appl. Phys.,
Vol. 100,
pp. 014106-1-9.,
2006.
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Satoru Kaneko,
Kensuke Akiyama,
Hiroshi Funakubo,
Mamoru Yoshimoto.
Strain-amplified structural modulation of Bi-cuprate high-Tc superconductors,
Physical Review,
Vol. B 74,
054503-1-4.,
2006.
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Kazuhisa Kawano,
Hiroaki Kosuge,
Noriaki Oshima,
Hiroshi Funakubo.
Ruthenium and Ruthenium Oxide Films Deposition by MOCVD Using Ru(DMPD)2,
ECS Trans,
Vol. 1,
No. 5,
pp. 139.,
2006.
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Kazuhisa Kawano,
Hiroaki Kosuge,
Noriaki Oshima,
Hiroshi Funakubo.
Conformability of Ruthenium Dioxide Films Prepared on Substrates with Capacitor Holes by MOCVD and Modification by Annealing,
Electrochem. Solid-State Lett.,
Vol. 9,
No. 11,
C175-C177.,
2006.
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Takayuki Watanabe,
Hiroshi Funakubo.
Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties,
J. Appl. Phys.,
Vol. 100,
pp. 051602-1-11.,
2006.
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Shintaro Yokoyama,
Satoshi Okamoto,
Hiroshi Funakubo,
Takashi Iijima,
Keisuke Saito,
Hirotake Okino,
Takashi Yamamoto,
Ken Nishida,
Takashi Katoda,
Joe Sakai.
Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O3–PbTiO3 films grown on (100)cSrRuO3 // (100)SrTiO3 substrates by metal-organic chemical vapor deposition,
J. Appl. Phys.,
Vol. 100,
pp. 054110.,
2006.
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Ken Nishida,
Minoru Osada,
Hiroshi Uchida,
Hiroshi Nakaki,
Seiichiro Koda,
Hiroshi Funakubo,
Takashi Katoda.
Site Occupancy Analysis on the Enhancement in Dy-Substituted Pb(Zr,Ti)O3 Film,
J. Appl. Phys.,
Vol. 45,
No. 9B,
pp. 7548-7551.,
2006.
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Hiroshi Uchida,
Hiroshi Nakaki,
Hiroshi Funakubo,
Seiichiro Koda.
Electrical Properties of Perovskite-based Ferroelectric Thin Films Modified using Rare-earth Elements,
Key. Eng. Mater.,,
Vol. 320,
pp. 49-52,
2006.
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Keisuke Saito,
Alexander Ulyanenkov,
Volkmar Grossmann,
Heiko Ress,
Lutz Bruegemann,
Hideo Ohta,
Toshiyuki Kurosawa,
Sadao Ueki,
Hiroshi Funakubo.
Structural Characterization of BiFeO3 Thin Films by Reciprocal Space Mapping,
Jpn. J. Appl. Phys.,
Vol. 45,
No. 9B,
pp. 7311-7314.,
2006.
-
Satoshi Okamoto,
Shintaro Yokoyama,
Shoji Okamoto,
Keisuke Saito,
Hiroshi Uchida,
Seiichiro Koda,
Hiroshi Funakubo.
Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg1/3Nb2/3)O3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition,
Jpn. J. Appl. Phys.,,
Vol. 45,
No. 40,
pp.L1074-L1076.,
2006.
-
T. Furukawa,
N. Oshima,
M. Suzuki,
Shouji Okamura,
HIROSHI FUNAKUBO.
“Properties of a Novel Bismuth Percursor for MOCVD”,
Integ. Ferro.,
Vol. 84,
pp. 197-202,
2006.
-
Satoru Kaneko,
Kensuke Akiyama,
Taku Oguni,
Takeshi Ito,
Yasuo Hirabayashi,
Seishiro Ohya,
Koichi Seo,
Yutaka Sawada,
Hiroshi Funakubo,
Mamoru Yoshimoto.
“Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)”,,
Jpn. J. Appl. Phys.,
Vol. 45,
No. 50,
pp. L1328-L1330,
2006.
-
Joe Sakai,
Nobuaki Ito,
Shinichi Ito,
Kenji Takahashi,
HIROSHI FUNAKUBO.
“Effect of thermal treatment on oxygen stoichiometry and transport properties of SrRuO3 thin films”,
Appl. Phys. Lett.,
Vol. 89,
pp. 242115,
2006.
-
Kenji Takahashi,
Muneyasu Suzuki,
Takashi Kojima,
Takayuki Watanabe,
Yukio Sakashita,
Kazumi Kato,
OSAMI SAKATA,
Kazushi Sumitani,
Hiroshi Funakubo.
Thickness Dependence of Dielectric Properties in Bismuth Layer-structured Dielectrics,
Appl. Phys. Lett.,
Vol. 89,
082901-1-3.,
2006.
-
Shintaro Yokoyama,
Kenji Takahashi,
Shoji Okamoto,
Atsushi Nagai,
Jun Minamidate,
Keisuke Saito,
Naoki Ohashi,
Hajime Haneda,
Osami Sakata,
Shigeru Kimura,
Ken Nishida,
Takashi Katoda,
Hiroshi Funakubo.
Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O3 Film by Metalorganic Chemical Vapor Deposition,
Jpn. J. Appl. Phys.,
Vol. 45,
No. 6A,
pp. 5102-5106.,
2006.
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Atsushi Nagai,
Jun Minamidate,
Gouji Asano,
Chel Jong Choi,
Choong-Rae Cho,
Youngsoo Park,
Hiroshi Funakubo.
Conformality of Pb(Zr, Ti)O3 Films Deposited on Trench Structures Having Submicrometer Diameter and Various Aspect Ratios,
Electrochem. Solid-State Lett.,
Vol. 9,
No. 1,
pp. C15-C18,
2006.
Domestic Conference (Reviewed)
International Conference (Not reviewed / Unknown)
-
Ken Nishida,
Hiroshi Funakubo,
Takashi Katoda.
Direct Observation of Domain Formation in PbTiO3 Film using in-situ Raman-CVD Combined Equipment,
2006 MRS Fall Meeting,
2006 MRS Fall Meeting,
p. 254,
Dec. 2006.
-
66)Kensuke Akiyama,
Satoru Kaneko,
Yasuo Hirabayashi,
Azusa Kyoduka,
Yutaka Sawada,
Hiroshi Funakubo.
Epitaxial Growth and Magnetic Properties of Fe3Si Thin Films,
2006 MRS Fall Meeting,
2006 MRS Fall Meeting,,
p. 337,
Nov. 2006.
-
N. Menou,
H. Kuwabara,
H. Funakubo.
Impact of (111)-Oriented SrRuO3/Pt Tailored Electrode for Highly Reporoducible Preparation of MOCVD-PZT Film for High Density FeRAM,
2006 International Conference on Solid State Devices and Materials (SSDM 2006),
2006 International Conference on Solid State Devices and Materials (SSDM 2006),
Vol. F-1-5,
pp.128-129.,
Sept. 2006.
-
Hiroshi Funakubo,
Kenji Takahshi.
Expansion Trial of "Size-Effect-Free" Dielectric Thin Film to the Real Application,
International Workshop on Advanced Ceramics (IWAC),
International Workshop on Advanced Ceramics (IWAC),
I-B06, p.54,
Sept. 2006.
-
Kensuke Akiyama,
Masaru Itakura,
Satoru Kaneko,
Hiroshi Funakubo,
Yoshihito Maeda.
Control of ß-FeSi2/Si Interface Structure by Cu Thin Layer,
The 16th International Microscopy Congress (IMC16),
The 16th International Microscopy Congress (IMC16),
Vol. **,
pp. **,
Sept. 2006.
-
Hiroshi Funakubo,
Gouji Asano,
Kazuaki Tonari,
Yukichi Takamatsu,
Kunio Ohtsuki,
Tsukasa Satake.
In-Situ Gas-Phase FTIR Monitoring of Liquid Delivery MOCVD Process for PZT Films Preparation,
Process Intensification and Innovation Process (PI)2 Conference II Cleaner, Sustainable, Efficient Technologies for the Future,
Process Intensification and Innovation Process (PI)2 Conference II Cleaner, Sustainable, Efficient Technologies for the Future,
p. 51.,
Sept. 2006.
-
Nicolas Menou,
Hiroki Kuwabara,
Hiroshi Funakubo.
Highly Reproducible MOCVD Deposition of (111)-oriented PZT Films on SrRuO3/Pt/TiO2/SiO2/Si: Structure and Electric Properties within MOCVD Process Window,
The 5th Asian Meeting on Ferroelectrics (AMF-5),
The 5th Asian Meeting on Ferroelectrics (AMF-5),
Vol. O-4-C-05,
p.31.,
Sept. 2006.
-
野田実,
伊藤信一,
ダニエルポポビッチ,
奥山雅則,
HIROSHI FUNAKUBO.
MgO基板上RFスパッタBST薄膜コプレーナ線路構造の高周波チューナブル特性,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 30a-V-8,
pp. P.511.,
Aug. 2006.
-
Shintaro Yokoyama,
Ken Nishida,
Takashi Katoda,
Keisuke,
Saito,
Hiroshi Funakubo.
Domain Structure of Pb(Zr,Ti)O3 Thick Films Near MPB Composition Consisting of Mixture of Tetragonal and Rhombohedral Phases,
15th IEEE International Symposium on the Applications of Ferroelectrics (ISAF2006),
15th IEEE International Symposium on the Applications of Ferroelectrics (ISAF2006),
p. 123,
Aug. 2006.
-
Hiroshi Nakaki,
Yong Kwan Kim,
Shintaro Yokoyama,
Ken Nishida,
Takashi Katoda,
Keisuke Saito,
Hiroshi Funakubo.
Strain Relaxation in Eptaxial Thick PbTiO3 Films Grown by MOCVD,
15th IEEE International Symposium on the Applications of Ferroelectrics (ISAF2006),
15th IEEE International Symposium on the Applications of Ferroelectrics (ISAF2006),
p. 185.,
July 2006.
-
K. Akiyama,
M. Itakura,
S. Kaneko,
H. Funakubo,
Y. Maeda.
Control of -FeSi2/Si Interface Structure by Cu Layer,
Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2006),
Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2006),
Vol. B-7,
pp. pp20-21.,
July 2006.
-
K. Nishida,
S. Yokoyama,
S. Okamoto,
K. Saito,
H. Uchida,
S. Koda,
T. Katoda,
H. Funakubo.
Single-Phase Pb(Zn1/3Nb2/3)O3 Thin Films Grown by Metalorganic Chemical Vapor Deposition: -Effects of Growth Sequence and Kinds of Substrates-,
13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII),
13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII),
Tu-P.38.,
May 2006.
-
高鉉龍,
脇谷尚樹,
HIROSHI FUNAKUBO,
佐藤桂輔,
近藤正雄,
Jeffrey S. Cross,
丸山研二,
水谷惟恭,
篠崎和夫.
PLD法によるBiFeO3薄膜の合成とアニールによる強誘電性の向上,
第23回強誘電体応用会議(FMA-23),
第23回強誘電体応用会議(FMA-23),
Vol. 25-T-11,
pp. 45-46.,
May 2006.
-
斎藤啓介,
黒澤利行,
植木定雄,
HIROSHI FUNAKUBO.
Structural Characterization of BiFeO3 Thin Films,
第23回強誘電体応用会議(FMA-23),
第23回強誘電体応用会議(FMA-23),
Vol. 25-T-12,
pp. 47-48,
May 2006.
-
安井伸太郎,
内田寛,
中木寛,
HIROSHI FUNAKUBO,
幸田清一郎.
BiFeO3-BiScO3薄膜の結晶構造と強誘電特性,
第23回強誘電体応用会議(FMA-23),
第23回強誘電体応用会議(FMA-23),
Vol. 25-T-14,
pp. 51-52.,
May 2006.
-
S. K. Singh,
Y. K. Kim,
H. Kuwabara,
H. Funakubo,
H. Ishiwara.
Strain Effect Due To The Bottom Electrodes In Epitaxial BiFeO3 Films Formed By Chemical Solution Deposition,
International Symposium on Integrated Ferroelectrics 2006 (ISIF2006),
International Symposium on Integrated Ferroelectrics 2006 (ISIF2006),
pp. 9-281-C,
Apr. 2006.
-
Hiroshi Funakubo,
Hiroki Kuwabara,
Shintaro Yokoyama.
Development Of Low Voltage-Saturated Polycrystalline (111)-One-Axis-Oriented PZT Films,
The International Symposium on Integrated Ferroelectrics (ISIF 2006),
pp. 6A-77-I,
Apr. 2006.
-
T.Furukawa,
N.Oshima,
M.Suzuki,
S.Okaura,
H.Funakubo.
Properties Of A Novel Bismuth Percursor For MOCVD,
International Symposium on Integrated Ferroelectrics 2006 (ISIF2006),
International Symposium on Integrated Ferroelectrics 2006 (ISIF2006),
pp. 6A-439-P,
Apr. 2006.
-
Osada Minoru,
Kim Yong Kwan,
Yokoyama Shintaro,
Funakubo Hiroshi.
In Situ Domain Dynamics Of Epitaxial Pb(Zr,Ti)O3 Films In A Simultaneous Raman And Electrical Experiment”,
International Symposium on Integrated Ferroelectrics 2006 (ISIF2006),
International Symposium on Integrated Ferroelectrics 2006 (ISIF2006),
6B-226-P,
Apr. 2006.
-
Yong Kwan Kim,
Hitoshi Morioka,
Osami Sakata,
Shigeru Kimura,
Hiroshi Funakubo.
Fatigue Properties In Epitaxial Pb(Zr0.35Ti0.65)O3 Films With Various Volume Fractions Of 90° Domains Grown On (100)cSrRuO3/(100)SrTiO3 Substrates,
International Symposium on Integrated Ferroelectrics 2006 (ISIF2006),
International Symposium on Integrated Ferroelectrics 2006 (ISIF2006),
pp. 5-541-P,
Apr. 2006.
-
Hiroshi Funakubo,
Kenji Takahshi.
Expansion Trial of "Size-Effect-Free" Dielectric Thin Film to the Real Application,
International Workshop on Advanced Ceramics (IWAC),
International Workshop on Advanced Ceramics (IWAC),
pp. I-B06, p.54,
2006.
Domestic Conference (Not reviewed / Unknown)
-
HIROSHI FUNAKUBO.
自然超格子構造を用いたサイズ効果フリー誘電体キャパシタ,
第47回真空に関する連合講演会,
第47回真空に関する連合講演会,
Vol. **,
Nov. 2006.
-
HIROSHI FUNAKUBO.
強誘電体/新材料アプリケーションの最新動向,
圧電膜評価及びマルチフェロイックデバイス等新材料評価の最前線セミナー,
圧電膜評価及びマルチフェロイックデバイス等新材料評価の最前線セミナー,
Vol. **,
Oct. 2006.
-
HIROSHI FUNAKUBO.
圧電膜の新規巨大圧電性発現機構の可能性,
セラミックス総合研究会,
セラミックス総合研究会,
Vol. **,
Oct. 2006.
-
坂井穣,
伊藤暢晃,
伊藤信一,
高橋健治,
HIROSHI FUNAKUBO.
アニール処理されたSrRuO3薄膜の酸素含有量と電気特性,
日本セラミックス協会第19回秋季シンポジウム,
日本セラミックス協会第19回秋季シンポジウム,
Vol. 2A04,
p. 13.,
Sept. 2006.
-
長田実,
海老名保男,
HIROSHI FUNAKUBO,
木口賢紀,
高田和典,
佐々木高義.
酸化物ナノシートの積層集積による高誘電体デバイスの作製,
日本セラミックス協会第19回秋季シンポジウム,
日本セラミックス協会第19回秋季シンポジウム,
Vol. 3A09,
p. 22.,
Sept. 2006.
-
90)Hiroshi Funakubo,
Kenji Takahashi,
Takashi Kojima,
Takayuki Watanabe,
Osami Sakata,
Kazushi Sumitani,
Yukio Sakashita,
Muneyasu Suzuki,
Kazumi Kato.
Thickness-Degradation-Free Deielectric Thin Films”,
JSPS日中セラミックス科学セミナー,
JSPS日中セラミックス科学セミナー,
pp. 19-23.,
Sept. 2006.
-
HIROSHI FUNAKUBO,
横山信太郎,
中木寛.
MOCVD合成したエピタキシャルPZT膜とPMN-PT膜の圧電特性比較,
日本セラミックス協会第19回秋季シンポジウム,
日本セラミックス協会第19回秋季シンポジウム,
Vol. 1A06,
p. 5.,
Sept. 2006.
-
N. Menou,
H. Kuwabara,
J. Cross,
K. Maruyama,
H. Funakubo.
Highly Reproducible Preparation of (111)-oriented PZT Ferroelectric Capacitors Using (111)SrRuO3/(111)Pt/Tio2/SiO2/Si Bottom Electrode : MOCVD Deposition, Top Electrode and Reliability,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 、31p-V-9,
pp. P.525.,
Aug. 2006.
-
HIROSHI FUNAKUBO.
CVD法による圧電体圧膜合成と評価,
第43回CVD研究会(第17回夏季セミナー),
第43回CVD研究会(第17回夏季セミナー),
Vol. **,
Aug. 2006.
-
伊藤信一,
掘露伊保龍,
HIROSHI FUNAKUBO.
(100) 一軸配向した(Ba0.5Sr0.5)TiO3 膜のチューナビリテーに及ぼす基板からの歪の効果,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 30a-V-7,
pp. P.511.,
Aug. 2006.
-
斎藤啓介,
黒澤利行,
植木定雄,
HIROSHI FUNAKUBO.
高分解能面内XRD法によるBiFeO3薄膜結晶構造の深さ方向分析,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 30a-V-10,
pp. P.512.,
Aug. 2006.
-
碇山理究,
中木寛,
金容寛,
西田謙,
斎藤啓介,
HIROSHI FUNAKUBO.
新規ドメイン構造を有するPbTiO3膜の応力緩和,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 31p-V-2,
pp. P.523.,
Aug. 2006.
-
中木寛,
金容寛,
横山信太郎,
西田謙,
斎藤啓介,
HIROSHI FUNAKUBO.
MOCVD成長エピタキシャル正方晶PZT膜の応力緩和,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 31p-V-3,
pp. P.523.,
Aug. 2006.
-
西田謙,
HIROSHI FUNAKUBO,
河東田隆.
In-situラマン分光-CVDコンビネーション装置によるPbTiO3薄膜のドメイン生成過程の直接観測,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 31p-V-4,
pp. P.523.,
Aug. 2006.
-
野田実,
伊藤信一,
ダニエルポポビッチ,
奥山雅則,
HIROSHI FUNAKUBO.
MgO基板上RFスパッタBST薄膜コプレーナ線路構造の高周波チューナブル特性,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 30a-V-8,
pp. P.511.,
Aug. 2006.
-
坂田修身,
渡辺隆之,
HIROSHI FUNAKUBO.
X線逆格子イメージ法によるBi4Ti3O12薄膜の構造観察,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 31p-V-18,
pp. P.528.,
Aug. 2006.
-
近藤剛史,
王美涵,
関成之,
内田孝幸,
大塚正男,
澤田豊,
HIROSHI FUNAKUBO.
スプレーCVD法によるITO薄膜の非平坦基板への堆積,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 30a-RA-4,
pp. P.560.,
Aug. 2006.
-
秋山賢輔,
経塚梓,
金子智,
平林康男,
澤田豊,
HIROSHI FUNAKUBO.
エピタキシャルFe3Si薄膜の成長及び磁気特性に及ぼす格子不整合率の影響,
2006年秋季第67回応用物理学会学術講演会,
2006年秋季第67回応用物理学会学術講演会,
Vol. 30a-RD-8,
Aug. 2006.
-
岡浦伸吾,
内田寛,
幸田清一郎,
長田実,
HIROSHI FUNAKUBO.
MOCVD合成したBi-Zn-Nb-O薄膜の誘電特性に及ぼす基板種および組成の効果,
第23回強誘電体応用会議(FMA-23),
第23回強誘電体応用会議(FMA-23),
Vol. 26-T-24,
pp. 129-130,
May 2006.
-
西田謙,
長田実,
内田寛,
中木寛,
幸田清一郎,
HIROSHI FUNAKUBO,
河東田隆.
Dy置換PZT薄膜におけるサイト占有率と分極特性と相関,
第23回強誘電体応用会議(FMA-23),
第23回強誘電体応用会議(FMA-23),
Vol. 26-B-18,
pp. 157-158.,
May 2006.
-
金子智,
秋山賢輔,
平林康男,
HIROSHI FUNAKUBO,
吉本護.
X線逆格子マッピングによるBi系超伝導薄膜の超構造評価,
2006年春季第53回応用物理学関係連合講演会,
2006年春季第53回応用物理学関係連合講演会,
Vol. 25p-K-2,
p. 270.,
Mar. 2006.
-
HIROSHI FUNAKUBO,
桑原弥紀,
横山信太郎,
西田謙,
河東田隆.
MOCVDによる(111)一軸配向正方晶PZT膜の合成,
日本セラミックス協会2006年年会,
日本セラミックス協会2006年年会,
Vol. 1A18L,
p. 1.,
Mar. 2006.
-
内田寛,
安井伸太郎,
HIROSHI FUNAKUBO,
幸田清一郎.
希土類置換ビスマスフェライト薄膜の結晶構造と電気特性,
日本セラミックス協会2006年年会,
日本セラミックス協会2006年年会,
Vol. 3A04,
p. 226,
Mar. 2006.
-
中木寛,
金容寛,
横山信太郎,
西田謙,
河東田隆,
HIROSHI FUNAKUBO.
MOCVD成長エピタキシャルPZT膜の新規ドメイン構造,
2006年春季第53回応用物理学関係連合講演会,
2006年春季第53回応用物理学関係連合講演会,
Vol. 25a-S-3,
p. 598,
Mar. 2006.
-
横山信太郎,
西田謙,
河東田隆,
斎藤啓介,
HIROSHI FUNAKUBO.
正方晶と菱面体晶が共存するMPB近傍組成を有するPb(Zr,Ti)O3エピタキシャル膜のドメイン構造,
2006年春季第53回応用物理学関係連合講演会,
2006年春季第53回応用物理学関係連合講演会,
Vol. 25a-S-4,
p. 598.,
Mar. 2006.
-
長田実,
金容寛,
横山信太郎,
HIROSHI FUNAKUBO.
ラマン・電気特性同時測定によるエピタキシャルPZT薄膜のドメイン構造のその場評価,
2006年春季第53回応用物理学関係連合講演会,
2006年春季第53回応用物理学関係連合講演会,
Vol. p.599.,
pp. 25a-S-6,
Mar. 2006.
-
西田謙,
長田実,
内田寛,
中木寛,
幸田清一郎,
HIROSHI FUNAKUBO,
河東田隆.
Dy置換されたPZT薄膜のサイト選択性とその強誘電性,
2006年春季第53回応用物理学関係連合講演会,
2006年春季第53回応用物理学関係連合講演会,
Vol. 25a-S-7,
p. 599.,
Mar. 2006.
-
安井伸太郎,
内田寛,
中木寛,
HIROSHI FUNAKUBO,
幸田清一郎.
化学溶液法によるBiFeO3-BiScO3薄膜の作製,
2006年春季第53回応用物理学関係連合講演会,
2006年春季第53回応用物理学関係連合講演会,
Vol. 26p-S-6,
p. 612.,
Mar. 2006.
-
西田謙,
横山信太郎,
長田実,
斉藤啓介,
坂本修身,
木村滋,
HIROSHI FUNAKUBO,
河東田隆.
ラマン分光及びマイクロビームX線回折を用いたマイクロパターニングPZT薄膜の構造解析,
2006年春季第53回応用物理学関係連合講演会,
2006年春季第53回応用物理学関係連合講演会,
Vol. 25a-S-8,
p. 599.,
Mar. 2006.
-
秋山賢輔,
金子智,
板倉賢,
HIROSHI FUNAKUBO,
前田佳均.
β-FeSi2 /Si(100)界面構造に及ぼすCuの影響,
2006年春季第53回応用物理学関係連合講演会,
2006年春季第53回応用物理学関係連合講演会,
Vol. 25p-D-9,
p. 1461.,
Mar. 2006.
-
西田謙,
長田実,
HIROSHI FUNAKUBO,
河東田隆.
顕微ラマン分光法によるPZT薄膜の評価偏光解析によるドメイン構造と分極特性の評価,
第44回セラミックス基礎科学討論会,
第44回セラミックス基礎科学討論会,
Vol. 2A-16,
p. 272.,
Jan. 2006.
-
HIROSHI FUNAKUBO,
横山信太郎,
岡本賢,
岡本庄司,
斎藤啓介,
内田寛,
幸田清一郎.
MOCVD法によるエピタキシャルPZN-PT膜の合成,
第44回セラミックス基礎科学討論会,
第44回セラミックス基礎科学討論会,
Vol. 2A-01,
p. 242.,
Jan. 2006.
-
H.Shima,
H.Naganuma,
S.Okamura,
T.Iijima,
H.Funakubo.
La Content Dependence of Piezoelectric Properties of Polycrystalline (Pb,La)(Zr0.65,Ti0.35)O3 Films,
第17回日本MRS学術シンポジウム,
第17回日本MRS学術シンポジウム,
pp. A-P34-M,
2006.
Patent
-
HIROSHI FUNAKUBO.
ペロブスカイト型酸化物薄膜の成膜方法、圧電素子、液体吐出ヘッドおよび液体吐出装置.
Patent.
Published.
国立大学法人東京工業大学, キヤノン株式会社.
2006/10/20.
特願2006-286106.
2007/06/07.
特開2007-138292.
2007.
-
HIROSHI FUNAKUBO.
成膜方法及び酸化物薄膜素子.
Patent.
Published.
国立大学法人東京工業大学, キヤノン株式会社.
2006/10/20.
特願2006-286094.
2007/06/07.
特開2007-142385.
2007.
-
HIROSHI FUNAKUBO.
エピタキシャル酸化物膜、圧電膜、圧電膜素子、圧電膜素子を用いた液体吐出ヘッド及び液体吐出装置.
Patent.
Registered.
国立大学法人東京工業大学, キヤノン株式会社.
2006/08/28.
特願2006-231238.
2007/11/01.
特開2007-288123.
特許第5041765号.
2012/07/20
2012.
-
HIROSHI FUNAKUBO.
圧電体とその製造方法、圧電素子とそれを用いた液体吐出ヘッド及び液体吐出装置.
Patent.
Published.
国立大学法人東京工業大学, キヤノン株式会社.
2006/08/23.
特願2006-227051.
2007/04/05.
特開2007-088443.
2007.
-
HIROSHI FUNAKUBO.
ペブロスカイト型酸化物、これを用いた圧電素子、液体吐出ヘッド、液体吐出装置及びペブロスカイト型酸化物の製造方法.
Patent.
Published.
国立大学法人東京工業大学, キヤノン株式会社.
2006/08/23.
特願2006-227005.
2007/04/05.
特開2007-084424.
2007.
-
HIROSHI FUNAKUBO.
圧電体素子、それを用いた液体吐出ヘッド、および液体吐出装置.
Patent.
Published.
国立大学法人東京工業大学, キヤノン株式会社.
2006/08/23.
特願2006-227043.
2007/04/05.
特開2007-088442.
2007.
-
HIROSHI FUNAKUBO.
圧電体、圧電体素子、圧電体素子を用いた液体吐出ヘッド及び液体吐出装置.
Patent.
Published.
国立大学法人東京工業大学, キヤノン株式会社.
2006/07/18.
特願2006-196114.
2008/02/07.
特開2008-024532.
2008.
-
HIROSHI FUNAKUBO.
圧電体素子、液体吐出ヘッド及び液体吐出装置.
Patent.
Published.
国立大学法人東京工業大学, キヤノン株式会社.
2006/01/16.
特願2006-007529.
2007/04/12.
特開2007-096248.
2007.
-
HIROSHI FUNAKUBO.
強誘電体材料、その製造方法及び強誘電体メモリ.
Patent.
Published.
国立大学法人東京工業大学, 富士通株式会社.
2004/12/22.
特願2004-371905.
2006/07/06.
特開2006-176366.
2006.
-
HIROSHI FUNAKUBO.
SrIrO3に基づく金属酸化物の薄膜の製造方法.
Patent.
Published.
国立大学法人東京工業大学, 東ソー株式会社.
2004/08/31.
特願2004-253356.
2006/03/16.
特開2006-070310.
2006.
-
HIROSHI FUNAKUBO.
ビスマス層状化合物系誘電体薄膜.
Patent.
Published.
国立大学法人東京工業大学.
2004/08/31.
特願2004-253286.
2006/03/16.
特開2006-073275.
2006.
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