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角嶋邦之 2023年 研究業績一覧 (11件 / 821件)
論文
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Reika Ota,
Shinnosuke Yasuoka,
Ryoichi Mizutani,
Takahisa Shiraishi,
Kazuki Okamoto,
Kuniyuki Kakushima,
Tomoyuki Koganezawa,
Osami Sakata,
Hiroshi Funakubo.
Scalable ferroelectricity of 20-nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes,
J. Appl. Phys.,
vol. 134,
pp. 214103-1-6,
Dec. 2023.
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Masaki Otomo,
Masaya Hamada,
Ryo Ono,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer,
Japanese Journal of Applied Physics,
IOP Publishing,
Vol. 62,
p. SC1015,
Jan. 2023.
公式リンク
国際会議発表 (査読有り)
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Ryosuke Kajikawa,
Takamasa Kawanago,
Iriya Muneta,
Takuya Hoshii,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-Aligned WOx S/D Contacts to Gate Stacks with TiOx Nucleation Layer by Multiple-Deposition Method in WSe2 pFETs,
International Conference on Solid State Devices and Materials,
Sept. 2023.
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Iriya Muneta,
Takanori Shirokura,
Pham Nam Hai,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure,
Intermag 2023,
May 2023.
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Ryo Ono,
Shinya Imai,
Takamasa Kawanago,
Iriya Muneta,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Hitoshi Wakabayashi.
Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film,
IEEE Electron Devices Technology and Manufacturing Conference (EDTM),
Mar. 2023.
公式リンク
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Shinya Imai,
Ryo Ono,
Iriya Muneta,
Kuniyuki Kakushima,
Tetsuya Tatsumi,
Shigetaka Tomiya,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid,
IEEE Electron Devices Technology and Manufacturing Conference (EDTM),
Mar. 2023.
公式リンク
国内会議発表 (査読なし・不明)
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今井 慎也,
梶川 亮介,
川那子 高暢,
宗田 伊理也,
角嶋 邦之,
辰巳 哲也,
冨谷 茂隆,
筒井 一生,
若林 整.
スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性,
第84回応用物理学会秋季学術講演会,
Sept. 2023.
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梶川 亮介,
川那子 高暢,
宗田 伊理也,
星井 拓也,
角嶋 邦之,
筒井 一生,
若林 整.
トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET,
第84回応用物理学会秋季学術講演会,
Sept. 2023.
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寺岡 楓,
今井 慎也,
黒原 啓太,
伊東 壮真,
川那子 高暢,
宗田 伊理也,
角嶋 邦之,
若林 整.
Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性,
第84回応用物理学会秋季学術講演会,
Sept. 2023.
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Peilong Wang,
Atsushi Hori,
Iriya Muneta,
Takamasa Kawanago,
Kuniyuki Kakushima,
Kazuo Tsutsui,
Hitoshi Wakabayashi.
Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs,
70th JSAP Spring meeting,
Mar. 2023.
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濱田 昌也,
松浦 賢太朗,
濱田 拓也,
宗田 伊理也,
角嶋 邦之,
筒井 一生,
若林 整.
ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact,
第70回応用物理学会春季学術講演会,
Mar. 2023.
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