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Publication List - N Kadotani (7 entries)
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Journal Paper
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N. Kadotani,
T. Ohashi,
T. Takahashi,
S. Oda,
K. Uchida.
Experimental Study on Electron Mobility in Accumulation-Mode Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors,
Japanese Journal of Applied Physics,
Vol. 50,
pp. 094101 (7 pages),
Sept. 2011.
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N. Kadotani,
T. Takahashi,
T. Ohashi,
S. Oda,
K. Uchida.
Electron mobility enhancement in nanoscale silicon-on-insulator diffusion layers with high doping concentration of greater than 1E18 cm-3 and silicon-on-insulator thickness of less than 10 nm,
Journal of Applied Physics,
Vol. 110,
pp. 034502. (7 pages),
2011.
International Conference (Reviewed)
Domestic Conference (Not reviewed / Unknown)
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Yuuya Kurosawa,
N Kadotani,
Tsunaki Takahashi,
Teruyuki Ohashi,
SHUNRI ODA,
Ken Uchida.
不純物のイオン化エネルギー増大によるナノワイヤトランジスタの電気的特性に与える影響,
第74回応用物理学会秋季学術講演会,
Sept. 2013.
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Yuuya Kurosawa,
N Kadotani,
Tsunaki Takahashi,
Teruyuki Ohashi,
SHUNRI ODA,
Ken Uchida.
ナノ薄膜SOI における不純物のイオン化エネルギー増大,
第59回応用物理学関係連合講演会,
17a-A1-4,
Mar. 2012.
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N Kadotani,
Tsunaki Takahashi,
大橋輝之,
Tetsuo Kodera,
SHUNRI ODA,
Ken Uchida.
高不純物濃度のETSOI(Extremely-Thin SOI) 拡散層における移動度とSOI 膜厚および不純物濃度の関係,
第58回応用物理学関係連合講演会,
Mar. 2011.
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N Kadotani,
Tsunaki Takahashi,
Tetsuo Kodera,
SHUNRI ODA,
Ken Uchida.
pn接合の無い極薄膜SOIトランジスタの作製と電気特性評価,
第71回応用物理学会学術講演会,
16a-ZE-2,
Sept. 2010.
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