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白石賢二研究業績一覧 (26件)

論文

Kenta Chokawa, Yoshiaki Daigo, Ichiro Mizushima, Takashi Yoda, Kenji Shiraishi. First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments, Japanese Journal of Applied Physics, Vol. 60, 085503-1, Aug. 2021.
HIROSHI IWAI, KENJI NATORI, Kenji Shiraishi, 岩田潤一, 押山淳, Keisaku Yamada, Kenji Ohmori, Kuniyuki KAKUSHIMA, Ahmet Parhat. Si nanowire FET and its modeling, Science China, Vol. 54, No. 5, pp. 1004-1011, May 2011.
Yeonghun Lee, KENJI NATORI, HIROSHI IWAI, Kuniyuki KAKUSHIMA, Kenji Shiraishi. Size-Dependent Properties of Ballistic Silicon Nanowire Field Effect Transistors, Journal of Applied Physics, Vol. 107, No. 11, pp. 113705, June 2010.
Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors, Applied Physics Letters97, 1, 2010.
Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors, Applied Physics Letters97, 1, ????,2010, 97, 1, 2010.
Kentaro Doi, Yutaka Mikazuki, Shinya Sugino, Tatsuki Doi, Pawel Szarek, Masato Senami, Kenji Shiraishi, HIROSHI IWAI, Naoto Umezawa, 知京豊裕, Keisaku Yamada, Akitomo Tachibana. Electronic structure study of local dielectric properties of lanthanoid oxide, clusters, JAPANESE JOURNAL OF APPLIED PHYSICS, Vol. 47, pp. 205-211, Jan. 2008.

著書

Hei Wong, Kenji Shiraishi, Kuniyuki KAKUSHIMA, HIROSHI IWAI. High-K Gate Dielectrics, Electronic Device Architectures for the Nano-CMOS Era, Pan Stanford Publishing Pte. Ltd., pp. 105-140, 2009.

国際会議発表 (査読有り)

T. Nakayama, Kuniyuki KAKUSHIMA, O. Nakatsuka, Y. Machida, S. Sotome, T. Matsuki, Kenji Ohmori, HIROSHI IWAI, S. Zaima, 知京豊裕, Kenji Shiraishi, Keisaku Yamada. Theory of Workfunction Control of Silicides by Doping for Future Si-Nano-Devices based on Fundamental Physics of Why Silicides Exist in Nature, 2010 IEDM, Dec. 2010.
Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Systematic Study on Size Dependences of Transport Parameters for Ballistic Nanowire-FET with Effective Mass Approximation, 2009 International Conference on Solid Sate Devices and Materials, E-7-5, Oct. 2009.
Miyuki Kouda, Kuniyuki KAKUSHIMA, Naoto Umezawa, Ahmet Parhat, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada, HIROSHI IWAI. Charged defects reduction in gate insulator with multivalent materials, 2009 Symposium on VLSI Technology, 2009 Symposium on VLSI Technology Digest of Technical Papers, VLSI Technology, pp. 200-201, June 2009.

国際会議発表 (査読なし・不明)

W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI. Fundamental origin of excellent low-noise property in 3D Si-MOSFETs ~Impact of charge-centroid in the channel due to quantum effect on 1/f noise ~, 2011 IEDM, 2013.
大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
櫻井蓉子, 大毛利健治, Keisaku Yamada, Kuniyuki KAKUSHIMA, T. Tayagaki, HIROSHI IWAI, Y. Kanemitsu, K. Asakawa, Kenji Shiraishi, S. Nomura. Photoluminescence Properties of Si Nanolayers and Si Nanowires, Tsukuba Nanotechnology Symposium 2012(TNS’12), 2012.
大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
大毛利健治, W. Feng, R. Hettiarachchi, Yeonghun Lee, Soshi Sato, Kuniyuki KAKUSHIMA, M. Sato, K. Fukuda, M. Niwa, K. Yamabe, Kenji Shiraishi, HIROSHI IWAI, Keisaku Yamada. Low-frequency noise reduction in Si Nanowire MOSFETs, ECS 221st Meeting, ECS Transactions, Vol. 45, No. 3, pp. 437-442, 2012.
櫻井蓉子, 大毛利健治, Keisaku Yamada, Kenji Shiraishi, Kuniyuki KAKUSHIMA, HIROSHI IWAI, S. Nomura. Photoluminescence Characterization of the Interface Properties of Si Nanolayers and Nanowires, ECS 220th Meeting, 2011.
Naoto Umezawa, Kenji Shiraishi, Kuniyuki KAKUSHIMA, Kenji Ohmori, Keisaku Yamada, 知京豊裕, HIROSHI IWAI. Relation between solubility of silicon in high-k oxides and the effect of Fermi level pinning, ECS 213th Meeting, May 2008.

国内会議発表 (査読なし・不明)

富澤巧, 川上賢人, 櫻井照夫, 草場彰, 岡本直也, 芳松克則, 醍醐佳明, 水島一郎, 依田孝, 寒川義裕, 柿本浩一, 白石賢二. 縦型結晶成長装置におけるGaN MOVPEシミュレーション, 第66回応用物理学会春期学術講演会, Mar. 2019.
李映勲, 角嶋邦之, 白石賢二, 名取研二, 岩井洋. バリスティックナノワイヤトランジスタ性能の太さ依存における状態密度と静電容量のトレードオフ, 第７１回応用物理学会学術講演会, Sept. 2010.
李映勲, 角嶋邦之, 白石賢二, 名取研二, 岩井洋. バリスティックSiナノワイヤトランジスタの電気特性の直径依存性, 第57回応用物理学関係連合講演会, 第57回応用物理学関係連合講演会講演予稿集, pp. 13-272, Mar. 2010.
Miyuki Kouda, Naoto Umezawa, Kuniyuki KAKUSHIMA, Hiroshi Nohira, Ahmet Parhat, Kenji Shiraishi, 知京豊裕, Keisaku Yamada, HIROSHI IWAI. Charged defects reduction in gate insulator with multivalent materials, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
Yeonghun Lee, Kuniyuki KAKUSHIMA, Kenji Shiraishi, KENJI NATORI, HIROSHI IWAI. Size-Dependent Transport Characteristics of Ballistic Silicon Nanowire FETs, G-COE PICE International Symposium on Silicon Nano Devices, Oct. 2009.
李映勲, 永田貴弘, 角嶋邦之, 白石賢二, 名取研二, 岩井洋. 引っ張り歪みSiナノワイヤの電子構造とバリスティック伝導, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 2, pp. 902, Mar. 2009.
岩井洋, 名取研二, 白石賢二, 山田啓作, 大毛利健二, 筒井一生, 角嶋邦之, パールハットアヘメト. シリコンナノワイヤFET研究の現状とロードマップ作成の考え方, 第56回応用物理学関係連合講演会, 第56回応用物理学関係連合講演会予稿集, 応用物理学会, No. 0, pp. 155, Mar. 2009.
幸田みゆき, 梅澤直人, 角嶋邦之, パールハットアヘメト, 白石賢二, 知京豊裕, 山田啓作, 岩井洋, 服部健雄. 低電子揺動Ce酸化物を利用したhigh－k膜中の固定電荷の抑制, 応用物理学会薄膜･表面物理分科会/シリコンテクノロジー分科会共催特別研究会ゲートスタック研究会－材料･プロセス・評価の物理－（第14回研究会）, ゲートスタック研究会－材料･プロセス・評価の物理－（第14回研究会）, ゲートスタック研究会, pp. 21, Jan. 2009.
李映勲, 永田貴弘, 白石賢二, 角嶋邦之, 岩井洋. 第一原理計算によるシリコンナノワイヤの電子構造解析, 秋季第69回応用物理学会学術講演会, 秋季第69回応用物理学会学術講演会予稿集, 応用物理学会, No. 2, pp. 766, Sept. 2008.

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