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星拓也 研究業績一覧 (5件)
論文
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T. Sasaki,
H. Sugiyama,
Y. Yoshiya,
T. Hoshi,
Y. Miyamoto,
F. Nakajima.
Impact of back-end-of-line processing on DC and RF characteristics of 60-nm-gate InP-based HEMTs for terahertz MMICs,
Jpn J. Appl. Phys.,
vol. 65,
Feb. 2026.
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Y. Ito,
S. Tamai,
T. Hoshi,
T. Gotow,
Y. Miyamoto.
Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers,
JPN. J. APPL. PHYS.,
vol. 62,
no. SC,
SC1048,
Feb. 2023.
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Manabu Mitsuhara,
Takahiro Gotow,
Takuya Hoshi,
Hiroki Sugiyama,
Mitsuru Takenaka,
Shinichi Takagi.
Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates,
Journal of Crystal Growth,
555,
125970,
Nov. 2020.
国際会議発表 (査読有り)
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T. Sasaki,
H. Sugiyama,
Y. Yoshiya,
T. Hoshi,
Y. Miyamoto,
F. Nakajima.
Impact of back-end-of-line processing on DC and RF characteristics of 60-nm-gate InP-based HEMTs for terahertz MMICs,
International Microprocesses and Nanotechnology Conference,
Nov. 2025.
公式リンク
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Y. Ito,
S. Tamai,
T. Hoshi,
Y. Miyamoto.
GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers,
2022 International Conference on Solid State Devices and Materials,
Sept. 2022.
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