論文

• T. Sasaki, H. Sugiyama, Y. Yoshiya, T. Hoshi, Y. Miyamoto, F. Nakajima. Impact of back-end-of-line processing on DC and RF characteristics of 60-nm-gate InP-based HEMTs for terahertz MMICs, Jpn J. Appl. Phys., vol. 65, Feb. 2026.
• Y. Ito, S. Tamai, T. Hoshi, T. Gotow, Y. Miyamoto. Dependence of Process Damage on GaN Channel Thickness in AlGaN/GaN High-electron-mobility Transistors with Back-barrier Layers, JPN. J. APPL. PHYS., vol. 62, no. SC, SC1048, Feb. 2023.
• Manabu Mitsuhara, Takahiro Gotow, Takuya Hoshi, Hiroki Sugiyama, Mitsuru Takenaka, Shinichi Takagi. Comparative studies of structural and photoluminescence properties between tensile-strained In0.39Ga0.61As and GaAs0.64Sb0.36 layers grown on InP(001) substrates, Journal of Crystal Growth, 555, 125970, Nov. 2020.

国際会議発表 (査読有り)

• T. Sasaki, H. Sugiyama, Y. Yoshiya, T. Hoshi, Y. Miyamoto, F. Nakajima. Impact of back-end-of-line processing on DC and RF characteristics of 60-nm-gate InP-based HEMTs for terahertz MMICs, International Microprocesses and Nanotechnology Conference, Nov. 2025.  公式リンク  
  
• Y. Ito, S. Tamai, T. Hoshi, Y. Miyamoto. GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers, 2022 International Conference on Solid State Devices and Materials, Sept. 2022.

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