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Publication List - Toru Kanazawa 2010 (11 / 154 entries)
Journal Paper
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Toru Kanazawa,
kazuya wakabayashi,
Hisashi Saito,
Ryousuke Terao,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Submicron InP/InGaAs Composite-Channel Metal–Oxide–Semiconductor Field-Effect Transistor with Selectively Regrown n+-Source,
Applied Physics Express,
Vol. 3,
No. 9,
094201,
Sept. 2010.
International Conference (Reviewed)
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Toru Kanazawa,
Ryousuke Terao,
Yuutarou Yamaguchi,
Shunsuke Ikeda,
Yosiharu Yonai,
YASUYUKI MIYAMOTO.
InP/InGaAs MOSFET with Back-Electrode Structure Bonded on Si Substrate Using a BCB Adhesive Layer,
2010 International Conference on Solid State Devices and Materials,
pp. 129-130,
Sept. 2010.
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Y. Miyamoto,
T. Kanazawa,
H. Saito.
InGaAs MISFET with epitaxially grown source,
The 3rd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies,
InGaAs MISFET with epitaxially grown source,
June 2010.
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T. Kanazawa,
K. Wakabayashi,
H. Saito,
R. Terao,
T. Tajima,
S. Ikeda,
Y. Miyamoto,
K. Furuya.
Submicron InP/InGaAs composite channel MOSFETs with selectively regrown n+-source/drain buried in channel undercut,
22nd Int. Conf. Indium Phosphide and Related Materials,
June 2010.
International Conference (Not reviewed / Unknown)
Domestic Conference (Not reviewed / Unknown)
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Toru Kanazawa,
Ryousuke Terao,
Yuutarou Yamaguchi,
Shunsuke Ikeda,
Yosiharu Yonai,
atsushi kato,
YASUYUKI MIYAMOTO.
InP/InGaAs MOSFET with back-gate electrode bonded on Si substrate,
第71回応用物理学会学術講演会,
Sept. 2010.
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Ryousuke Terao,
Toru Kanazawa,
Shunsuke Ikeda,
Yosiharu Yonai,
atsushi kato,
YASUYUKI MIYAMOTO.
Submicron InP/InGaAs channel n-MOSFET with regrown InGaAs and Al2O3 gate dielectric,
第71回応用物理学会学術講演会,
Sept. 2010.
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Toru Kanazawa,
kazuya wakabayashi,
Hisashi Saito,
Ryousuke Terao,
Tomonori Tajima,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
III-V族サブミクロンチャネルを有する高移動度MOSFET,
電気学会電子デバイス研究会,
Mar. 2010.
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Ryousuke Terao,
Toru Kanazawa,
Hisashi Saito,
kazuya wakabayashi,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
Al2O3ゲート絶縁膜を用いたInP/InGaAsチャネル n-MOSFETの電気特,
第57回応用物理学関係連合研究会,
Mar. 2010.
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kazuya wakabayashi,
Toru Kanazawa,
Hisashi Saito,
Ryousuke Terao,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
再成長ソースを有するサブミクロンInP/InGaAs nMOSFETの電流電圧特性,
第57回応用物理学関係連合研究会,
Mar. 2010.
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Toru Kanazawa,
kazuya wakabayashi,
Hisashi Saito,
Ryousuke Terao,
Tomonori Tajima,
Shunsuke Ikeda,
YASUYUKI MIYAMOTO,
KAZUHITO FURUYA.
InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric,
IEICE Technical Report, Electron Devices,
IEICE Technical Report, Electron Devices,
Vol. 109,
No. 360,
pp. 39-42,
Jan. 2010.
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