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Publication List - YASUYUKI MIYAMOTO 1998 (6 / 477 entries)
Journal Paper
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T.Oobo,
R.Takemura,
K.Sato,
M.Suhara,
Y.Miyamoto,
K.Furuya.
Effect of spacer layer thickness in energy level width narrowing in GaInAs/InP resonant tunneling diodes grown by OMVPE,
Jpn. J. Appl. Phys.,
Vol. 37,
No. 2,
pp. 445,
1998.
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A.Kokubo,
T.Hattori,
H.Hongo,
M.Suhara,
Y.Miyamoto,
K.Furuya.
25 nm Pitch GaInAs/InP Buried Structure by Calixarene Resist,
Jpn. J. Appl. Phys.,
Vol. 37,
No. 7A,
pp. L827,
1998.
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H.Hongo,
Y.Miyamoto,
J.Suzuki,
M.Suhara,
K.Furuya.
Wrapped Alignment Mark for fabrication of Interference/Diffraction hot electron devices,
Jpn. J. Appl.Phys.,
Vol. 37,
No. 3B,
pp. 1518,
1998.
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Y.Miyamoto,
A.Yamaguchi,
K. Oshima,
W.Saitoh,
M.Asada.
Metal-Insulator-Semiconductor emitter with epitaxial CaF2 layer as insnlator,
J. Vac. Sci. Technol.,
Vol. B16,
No. 2,
pp. 851,
1998.
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Y.Miyamoto,
J.Yoshinaga,
H.Toda,
T.Arai,
H.Hongo,
T.Hattori,
A.Kokubo,
K.Furuya.
Sub-micron GaInAs/InP Hot Electron Transistors by EBL process and size dependence of current gain,
Solid State Electronics,
Vol. 42,
No. 7-8,
pp. 1467,
1998.
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Y.Miyamoto,
A.Kokubo,
T.Hattori,
H.Hongo,
M.Suhara,
K.Furuya.
25 nm pitch GaInAs/InP buried structure : Improvement by calixarene as EB resist and TBP as P-source in OMVPE regrowth,
J. Vac. Sci. Technol. B,
Vol. 16,
No. 6,
pp. 3894-3898,
1998.
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