Journal Paper

• YASUYUKI MIYAMOTO, Takahiro Gotow. GaN HEMTでの二次元電子ガスキャリヤ濃度と ゲートドレイン間リーク電流理論計算, 電気学会論文誌C, 電気学会, Vol. 142, No. 3, pp. 348-353, Mar. 2022.

International Conference (Reviewed)

• K. Makiyama, S. Yoshida, K. Nakata, Y. Miyamoto. Innovative RF Device Technologies for Advanced Information and Communications Network Society, IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, Oct. 2022.
• Y. Ito, S. Tamai, T. Hoshi, Y. Miyamoto. GaN channel thickness dependence in AlGaN / GaN HEMT structures with back barriers, 2022 International Conference on Solid State Devices and Materials, Sept. 2022.
• T. Gotow, T. Arai, T. Aota, Y. Miyamoto. Evaluation of TMAH treatment for isolation process of N-polar GaN HEMTs, Compound Semiconductor Week, June 2022.

Domestic Conference (Reviewed)

• Y. Miyamoto, K. Makiyama. Lateral thickness change of the high-k film on GaN HEMT for uniform electric field, 14th Topical Workshop on Heterostructure Microelectronics, (TWHM 2022), Aug. 2022.

Domestic Conference (Not reviewed / Unknown)

• Takahiro Arai, Tomoya Aota, isao makabe, 中田健, Takahiro Gotow, YASUYUKI MIYAMOTO. N極性GaN HEMTのTMAHによる素子分離, 第69回応用物理学会春季学術講演会, Mar. 2022.

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