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Publication List - Namhai Pham (24 / 541 entries)
Journal Paper
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Sho Kagami,
Takanori Shirokura,
Pham Nam Hai.
Effects of post-growth annealing in YPtBi topological semimetal and Co/Pt perpendicular magnetization multilayers,
Japanese Journal of Applied Physics,
Vol. 63,
No. 2,
pp. 02SP98,
Feb. 2024.
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Zhang Ruixian,
Ho Hoang Huy,
Takanori Shirokura,
Pham Nam Hai,
Quang Le,
Brian York,
Cherngye Hwang,
Xiaoyong Liu,
Michael Gribelyuk,
Xiaoyu Xu,
Son Le,
Maki Maeda,
Tuo Fan,
Yu Tao,
Hisashi Takano.
High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers,
Applied Physics Letters,
Vol. 124,
pp. 072402,
Feb. 2024.
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Takanori Shirokura,
Nguyen Huynh Duy Khang,
Pham Nam Hai.
High-efficient spin orbit torque generated by topological semimetal YPtBi deposited on oxidized Si substrates,
Applied Physics Letters,
Vol. 124,
pp. 052402,
Jan. 2024.
International Conference (Reviewed)
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Pham Nam Hai,
Ken Takabayashi,
Kota Ejiri,
Masaaki Tanaka.
Very high Curie temperature (530 K) in (Ga,Fe)Sb ferromagnetic semiconductor grown by step-flow mode on vicinal GaAs substrates,
The 23rd International Conference on Molecular-Beam Epitaxy (ICMBE2024),
Sept. 2024.
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Pham Nam Hai,
Takanori Shirokura,
Nguyen Huynh Duy Khang.
New method for suppression of magnetic domain wall shift error in 3D magnetic domain-wall memory,
SSDM 2024,
Sept. 2024.
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Pham Nam Hai.
(Invited) Topological materials for advanced magnetic memory and sensor,
The 5th International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2024),
Aug. 2024.
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Masaaki Tanaka,
Kosuke Takiguchi,
Nguyen Thanh Tu,
Le Duc Anh,
Pham Nam Hai.
(Keynote) A new class of Fe-doped III-V ferromagnetic semiconductors with high Curie temperature and their quantum heterostructures,
The 5th International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2024),
Aug. 2024.
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Kota Ejiri,
Yota Endo,
Kenta Takabayashi,
Masaaki Tanaka,
Pham Nam Hai.
Detection of Fe-induced impurity band in Bi-doped (InFe)(SbBi) ferromagnetic semiconductor using infrared magnetic circular dichroism spectroscopy,
The 5th International Symposium on Advanced Magnetic Materials and Applications (ISAMMA2024),
Aug. 2024.
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Masaaki Tanaka,
Kosuke Takiguchi,
Nguyen Thanh Tu,
Le Duc Anh,
Pham Nam Hai.
(Invited) A new class of Fe-doped III-V ferromagnetic semiconductors with high Curie temperatures and their quantum heterostructures,
36th International Conference on the Physics of Semiconductors (ICPS) 2024,
July 2024.
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H. H. Huy,
J. Sasaki,
N. H. D. Khang,
S. Namba,
P. N. Hai,
Q. Le,
B. York,
C. Hwang,
X. Liu,
M. Gribelyuk,
X. Xu,
S. Le,
M. Ho,
H. Takano.
Large inverse spin Hall effect in BiSb topological insulator for beyond 4 TB/In2 magnetic recording technology,
IEEE Magnetics Society Summer School 2024,
June 2024.
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Z. Ruixian,
H. H. Huy,
Q. Le,
B. York,
C. Hwang,
X. Liu,
M. Gribelyuk,
X. Xu,
S. Le,
M. Maeda,
F. Tuo,
Y. Tao,
H. Takano,
T. Shirokura,
P. N. Hai.
High spin Hall angle in heterostructures of BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers,
The 22nd International Conference on Magnetism (ICM2024),
June 2024.
Domestic Conference (Not reviewed / Unknown)
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H. H. Huy,
L. Wentao,
S. Takahashi,
Y. Hirayama,
Y. Kato,
P. N. Hai.
Spin Hall effect in annealed BiSb topological thin films deposited on Si/SiOx substrates,
The 85th JSAP Autumn Meeting 2024,
Sept. 2024.
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L. Wentao,
H. H. Huy,
S. Takahashi,
Y. Hirayama,
Y. Kato,
P. N. Hai.
Growth and evaluation of highly textured BiSb(001) topological insulator on Si/SiOx,
The 85th JSAP Autumn Meeting 2024,
Sept. 2024.
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Y. Osada,
M. Vaßen-Carl,
A. R. Jalil,
P. Schüffelgen,
P. N. Hai.
Growth and evaluation of BiSb topological insulator ultrathin films on Si(111) substrates for superconductor/2D-TI topological quantum bits,
The 27th Symposium on the Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-27),
Mar. 2024.
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Hajime Nishiyama,
Pham Nam Hai,
橋谷田 俊,
Yukio Kawano.
トポロジカル絶縁体BiSbのテラヘルツ分光特性,
第71回応用物理学会春季学術講演会,
Mar. 2024.
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Reo Yamamoto,
Takanori Shirokura,
Pham Nam Hai.
High spin Hall performance in YPtBi topological semimetal and perpendicular-anisotropy CoFeB junctions,
The 71th JSAP Spring Meeting 2024,
Mar. 2024.
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Ruixian Zhang,
Ho Hoang Huy,
Takanori Shirokura,
Pham Nam Hai,
Quang Le,
Brian R. York,
Cherngye Hwang,
Xiaoyong Liu,
Xiaoyu Xu,
Son Le,
Michael Gribelyuk,
Hisashi Takano,
Maki Maeda,
Fan Tuo,
Yu Tao.
High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers,
The 71th JSAP Spring Meeting 2024,
Mar. 2024.
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Kota Ejiri,
Yota Endo,
Kenta Takabayasi,
Masaaki Tanaka,
Pham Nam Hai.
Observation of impurity band in (InFe)(SbBi) ferromagnetic semiconductor using infrared magnetic circular dichroism spectroscopy,
The 71th JSAP Spring Meeting 2024,
Mar. 2024.
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Takanori Shirokura,
Pham Nam Hai.
Giant spin Hall effect in sputtered topological semimetal YPtBi films grown at low temperature,
The 71th JSAP Spring Meeting 2024,
Mar. 2024.
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M. Kobayashi,
N. H. D. Khang,
T. Takeda,
K. Araki,
R. Okano,
M. Suzuki,
K. Kuroda,
K. Yaji,
K. Sugawara,
S. Souma,
K. Nakayama,
M. Kitamura,
K. Horiba,
A. Fujimori,
T. Sato,
S. Shin,
M. Tanaka,
Pham Nam Hai.
Interface Topological States in a Bi/MnGa Heterostructure,
Symposium of the Spintronics Research Network of Japan (Spin-RNJ 2023),
Mar. 2024.
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M. Kobayashi,
K. Inagaki,
P. N. Hai.
Electronic Structure Study of Heterointerface between Topological Insulator and Ferromagnet by Angle-Resolve Photoemission Spectroscopy,
CREST領域会議 「トポロジカル材料科学の構築による革新的材料・デバイスの創出」,
Jan. 2024.
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H. H. Huy,
J. Sasaki,
N. H. D. Khang,
S. Namba,
P. N. Hai.
Large inverse spin Hall effect in BiSb topological insulator and application to SOT magnetic sensor,
CREST領域会議 「トポロジカル材料科学の構築による革新的材料・デバイスの創出」,
Jan. 2024.
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Pham Nam Hai,
Yasuyoshi Miyamoto,
Masaki Kobayashi.
トポロジカル表面状態を用いるスピン軌道トルク磁気メモリの創製,
CREST領域会議 「トポロジカル材料科学の構築による革新的材料・デバイスの創出」,
Jan. 2024.
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Yasuyoshi Miyamoto,
加藤 大典,
小倉 渓,
木下 延博,
Pham Nam Hai.
トポロジカル絶縁体BiSbを適用した磁性細線メモリー,
CREST領域会議 「トポロジカル材料科学の構築による革新的材料・デバイスの創出」,
Jan. 2024.
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