|
Publication List - Keisuke Ide 2012 (5 / 197 entries)
Journal Paper
-
Mutsumi Kimura,
Takayuki Hasegawa,
Keisuke Ide,
Kenji Nomura,
Toshio Kamiya,
Hideo Hosono.
Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing,
IEEE Electron Dev. Lett.,
Vol. 33,
No. 3,
pp. 384-386,
Feb. 2012.
-
Keisuke Ide,
Yutomo Kikuchi,
Kenji Nomura,
Toshio Kamiya,
Hideo Hosono.
Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors,
Thin Solid Films,
Vol. 520,
pp. 3787-3790,
2012.
-
Keisuke Ide,
Kenji Nomura,
Hidenori Hiramatsu,
Toshio Kamiya,
Hideo Hosono.
Structural relaxation in amorphous oxide semiconductor,
J. Appl. Phys,
Vol. 111,
No. 073513,
pp. 1 - 6,
2012.
-
Mutsumi Kimura,
Takayuki Hasegawa,
Keisuke Ide,
Kenji Nomura,
Toshio Kamiya,
Hideo Hosono.
Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing,
Solid-State Electronics,
Vol. 75,
pp. 74-76,
2012.
International Conference (Reviewed)
-
Hasegwa, T.,
Kimura, M.,
Keisuke Ide,
Nomura, K.,
Kamiya, T.,
HIDEO HOSONO.
Light irradiation history sensor using amorphous In-Ga-Zn-O thin-film transistor fabricated by high oxygen partial pressure sputtering,
Proceedings of the 19th International Workshop on Active-Matrix Flatpanel Displays and Devices - TFT Technologies and FPD Materials, AM-FPD 2012,
pp. 41-42,
2012.
[ Save as BibTeX ]
[ Paper, Presentations, Books, Others, Degrees: Save as CSV
]
[ Patents: Save as CSV
]
|