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若林整 2016年 研究業績一覧 (18件 / 384件)
論文
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"R. Miyazawa",
"H. Wakabayashi",
"K. Tsutsui",
"H. Iwai",
"K. Kakushima".
Photovoltaic Characteristics of Ultra-thin Single Crystalline Silicon Solar Cells,
International Journal of High Speed Electronics and Systems (IJHSES),
Vol. 25,
No. 1-2,
Page 1640008(7pages),
Sept. 2016.
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"J. Chen",
"H. Wakabayashi",
"K. Tsutsui",
"H. Iwai",
"K. Kakushima".
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current,
Microelectronic Reliability,
Vol. 63,
pp. 52-55,
Aug. 2016.
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"M.S. Hadi",
"N. Sugii",
"H. Wakabayashi",
"K. Tsutsui",
"H. Iwai",
"K. Kakushima".
Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes,
Microelectronics Reliability,
Vol. 63,
pp. 42-45,
Aug. 2016.
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"Tomoyuki Suzuki",
"Hitoshi Wakabayashi",
"Kazuo Tsutsui",
"Hiroshi Iwai",
"Kuniyuki Kakushima".
Laminated Mo/C Electrodes for 4H-SiC Schottky Barrier Diodes with Ideal Characteristics,
IEEE Electron Device Letters (EDL),
Vol. 37,
No. 5,
pp. 618-620,
May 2016.
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Yusuke Takei,
Kazuo Tsutsui,
Wataru Saito,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai.
Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high electron mobility transistors,
Japanese Journal of Applied Physics,
Vol. 55,
No. 4,
Apr. 2016.
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S. Ishihara,
Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Properties of single-layer MoS2 film fabricated by combination of sputtering deposition and post deposition sulfurization annealing using (t-C4H9)2S2,
Japan Journal of Applied Physics,
Vol. 55,
2016.
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"J. Chen",
"T. Kawanago",
"H. Wakabayashi",
"K. Tsutsui",
"H. Iwai",
"D. Nohata",
"H. Nohira",
"K. Kakushima".
La2O3 gate dielectrics for AlGaN/GaN HEMT,
Microelectronics Reliability,
Vol. 60,
pp. 16-19,
2016.
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Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Improving crystalline quality of sputtering-deposited MoS2 thin film by postdeposition sulfurization annealing using (t-C4H9)2S2,
Japan Journal of Applied Physics,
Vol. 55,
2016.
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S. Ishihara,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Wakabayashi,
A. Ogura.
Large Scale Uniformity of Sputtering Deposited Single- and Few-Layer MoS2 Investigated by XPS Multipoint Measurements and Histogram Analysis of Optical Contrast,
ECS J. Solid State Sci. Technol.,
Vol. 5,
No. 11,
2016.
国際会議発表 (査読有り)
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Tomoyuki Suzuki,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai,
Hiroshi Nohira,
Kuniyuki Kakushima.
Properties of SiC Schottky Junction with Laminated Molybdenum/Carbon Electrode,
47th IEEE Semiconductor Interface Specialists Conference (SISC2016),
Dec. 2016.
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K. Kakushima,
T. Hoshii,
K. Tsutsui,
A. Nakajima,
S. Nishizawa,
H. Wakabayashi,
I. Muneta,
K. Sato,
T. Matsudai,
W. Saito,
T. Saraya,
K. Itou,
M. Fukui,
S. Suzuki,
M. Kobayashi,
T. Takakura,
T. Hiramoto,
A. Ogura,
Y. Numasawa,
I. Omura,
H. Ohashi,
H. Iwai.
Experimental Verification of a 3D Scaling Principle for Low Vce(sat) IGBT,
62th International Electron Devices Meeting (IEDM2016),
p. 268,
Dec. 2016.
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Y. M. Lei,
T. Kaneko,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
K. Kakushima,
M. Furuhashi,
S. Tomohisa,
S. Yamakawa.
Influence of Interface ALD-SiO2 Layer for Lanthanum Silicate Gate Dielectrics for 4H-SiC MOS Capacitors,
47th IEEE Semiconductor Interface Specialists Conference (SISC2016),
Dec. 2016.
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Y. Ikeuchi,
T. Hoshii,
H. Wakabayashi,
K. Tsutsui,
H. Iwai,
K. Kakushima,
S.Ishikawa.
Characteristics of Fe/pGaN Contact upon Annealing Process,
47th IEEE Semiconductor Interface Specialists Conference (SISC2016),
Dec. 2016.
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J. Shimizu,
T. Ohashi,
K. Matsuura,
I. Muneta,
K. Kakushima,
K. Tsutsui,
H. Wakabayashi.
High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Low-Temperature Forming-Gas Annealing for 3D-IC,
International Conference on Solid State Devices and Materials,
Sept. 2016.
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Akira Nakajima,
Shunsuke Kubota,
Kazuo Tsutsui,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai,
Sin-ichi Nishizawa,
Hiromichi Ohashi.
Monolithic Integration of GaN-based Normally-off P- and N-channel MOSFETs,
13th International Seminar on Power Semiconductors (ISPS),
Aug. 2016.
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K. Matsuura,
T. Ohashi,
I. Muneta,
S. Ishihara,
N. Sawamoto,
K. Kakushima,
K. Tsutsui,
A. Ogura,
H. Wakabayashi.
Sulfurization in Sulfur Vapor for Sputtered-MoS2 Film,
Proc. of 47th IEEE Semiconductor Interface Specialists Conference (SISC),
2016.
国内会議発表 (査読有り)
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米田 允俊,
武田 さくら,
田口 宗孝,
松田 博之,
大橋匠,
清水 淳一,
Artoni Kevin Roquero Ang,
橋本 由介,
深見 駿,
田中 一光,
岡本 隆志,
江波戸 達哉,
大門 寛,
若林整,
木下 豊彦.
スパッタ法で作成されたMoS2薄膜のRHEEDと光電子分光による評価,
表面科学学術講演会要旨集,
公益社団法人 日本表面科学会,
Vol. 36,
pp. 164,
2016.
国内会議発表 (査読なし・不明)
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