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若林整 2015年 研究業績一覧 (16件 / 384件)
論文
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T. Ohashi,
K. Suda,
S. Ishihara,
N. Sawamoto,
S. Yamaguchi,
K. Matsuura,
K. Kakushima,
N. Sugii,
A. Nishiyama,
Y. Kataoka,
K. Natori,
K. Tsutsui,
H. Iwai,
A. Ogura,
H. Wakabayashi.
Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs,
Japan Journal of Applied Physics,
Vol. 54,
No. 4S,
Mar. 2015.
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"Yusuke Takei",
"Masayuki Kamiya",
"Kazuo Tsutsui",
"Wataru Saito",
"Kuniyuki Kakushima",
"Hitoshi Wakabayashi",
"Yoshinori Kataoka",
"Hiroshi Iwai".
Reduction of Contact Resistance on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers,
Physica Status Solidi A,
Vol. 212,
No. 5,
pp. 1104-1109,
Feb. 2015.
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Li, W.,
Sasaki, A.,
Oozu, H.,
Aoki, K.,
Kakushima, K.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H..
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity,
Microelectronics Reliability,
Vol. 55,
No. 2,
pp. 407-410,
2015.
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Li, W.,
Sasaki, A.,
Oozu, H.,
Aoki, K.,
Kakushima, K.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H..
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes,
Microelectronics Reliability,
Vol. 55,
No. 2,
pp. 402-406,
2015.
国際会議発表 (査読有り)
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A. Nakajima,
S. Kubota,
R. Kayanuma,
K. Tsutsui,
K. Kakushima,
H. Wakabayashi,
H. Iwai,
S. Nishizawa,
H. Ohashi.
An overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform,
2015 IEEE Compound Semiconductor IC Symposium (CSICS2015),
Oct. 2015.
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Akira Nakajima,
Shin-Ichi Nishizawa,
Hiromichi Ohashi,
Rei Kayanuma,
Kazuo Tsutsui,
Shunsuke Kubota,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Hiroshi Iwai.
GaN-Based Monolithic Power Integrated Circuit Technology with Wide Operating Temperature on Polarization-Junction Platform,
The 27th Int. Symp. on Power Semiconductor Devices and ICs (ISPSD2015),
May 2015.
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Nakajima, A.,
Nishizawa,
S.-I.,
Ohashi, H.,
Kayanuma, R.,
Tsutsui, K.,
Kubota, S.,
Kakushima, K.,
Hitoshi Wakabayashi,
Iwai, H..
GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform,
Proceedings of the International Symposium on Power Semiconductor Devices and ICs,
Vol. 2015-June,
pp. 357-360,
2015.
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Baba, T.,
Kakushima, K.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Iwai, H..
An extraction method of charge trapping site distribution in AlGaN layer in GaN HEMT,
WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications,
pp. 125-128,
2015.
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Nakajima, A.,
Nishizawa,
S.-I.,
Kubota, S.,
Kayanuma, R.,
Tsutsui, K.,
Ohashi, H.,
Kakushima, K.,
Hitoshi Wakabayashi,
Iwai, H..
An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform,
2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015,
2015.
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Imamura, H.,
Kakushima, K.,
Kataoka, Y.,
Nishiyama, A.,
Sugii, N.,
Hitoshi Wakabayashi,
Tsutsui, K.,
Natori, K.,
Iwai, H..
Influence of sputtering gas on resistivity of thin Ni silicide films,
China Semiconductor Technology International Conference 2015, CSTIC 2015,
2015.
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Y. Hibino,
S. Ishihara,
N. Sawamoto,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Low Temperature Formation of Layered MoS2 by Sulfurization of E-Beam Evaporated Mo Thin Film Using (t-C4H9)2S2,
MRS Fall Meeting & Exhibit,
2015.
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S. Ishihara,
Y. Hibino,
N. Sawamoto,
K. Suda,
T. Ohashi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Fabrication of High-Quality Single- and Few-Layer MoS2 Films by Combination of Sputtering Deposition and Post-Deposition Sulfurization Annealing,
MRS Fall Meeting & Exhibit,
2015.
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S. Ishihara,
K. Suda,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
S. Yamaguchi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Improving Crystalline Quality of Sputtering Deposited MoS2 Thin Film by Post-Deposition Sulfurization Annealing Using (t-C4H9)2S2,
International Conference on Solid State Devices and Materials,
2015.
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S. Ishihara,
K. Suda,
Y. Hibino,
N. Sawamoto,
T. Ohashi,
S. Yamaguchi,
K. Matsuura,
H. Machida,
M. Ishikawa,
H. Sudoh,
H. Wakabayashi,
A. Ogura.
Evaluation of Sputtering Deposited 2-Dimensional MoS2 Film by Raman Spectroscopy,
MRS Proceedings,
1781,
11,
2015.
国際会議発表 (査読なし・不明)
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Yusuke Takei,
Tomohiro Shimoda,
Wataru Saito,
Kuniyuki Kakushima,
Hitoshi Wakabayashi,
Kazuo Tsutsui,
Hiroshi Iwai.
Lowering Contact Resistances on AlGaN/GaN HEMT Structures by Introducing Uneven AlGaN Layers: Effects of Configuration and Size of Lateral Patterns,
2015 Material Research Society (MRS) Fall Meeting,
Nov. 2015.
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Shunsuke Kubota,
Rei Kayanuma,
Akira Nakajima,
Shin-ichi Nishizawa,
Shin-ichi Nishizawa,
Hiromichi Ohashi,
Hitoshi Wakabayashi,
Kazuo Tsutsui.
P-Channel AlGaN/GaN MOSFETs for Normally-Off Operation,
2015 Material Research Society (MRS) Fall Meeting,
Nov. 2015.
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